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    Semiconductor device and method for manufacturing a semiconductor device
    1.
    发明授权
    Semiconductor device and method for manufacturing a semiconductor device 有权
    半导体装置及其制造方法

    公开(公告)号：US07821059B2

    公开(公告)日：2010-10-26

    申请号：US12234197

    申请日：2008-09-19

    申请人： Masao Shingu ,  Shoko Kikuchi ,  Akira Takashima ,  Tsunehiro Ino ,  Koichi Muraoka

    发明人： Masao Shingu ,  Shoko Kikuchi ,  Akira Takashima ,  Tsunehiro Ino ,  Koichi Muraoka

    IPC分类号： H01L21/8247 ,  H01L29/788 ,  H01L29/792 ,  H01L29/78 ,  H01L27/115

    CPC分类号： H01L29/792 ,  H01L21/28282 ,  H01L21/31604 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66833

    摘要： In a semiconductor device, the side walls are made of SiO2, SiN or SiON, and the top insulating film or gate insulating film is made of an oxide including Al, Si, and metal element M so that the number ratio Si/M is set to no less than a number ratio Si/M at a solid solubility limit of SiO2 composition in a composite oxide including metal element M and Al and set to no more than a number ratio Si/M at the condition that the dielectric constant is equal to the dielectric constant of Al2O3 and so that the number ratio Al/M is set to no less than a number ratio Al/M where the crystallization of an oxide of said metal element M is suppressed due to the Al element and set to no more than a number ratio Al/M where the crystallization of the Al2O3 is suppressed due to the metal element M.

    摘要翻译： 在半导体器件中，侧壁由SiO 2，SiN或SiON制成，并且顶部绝缘膜或栅极绝缘膜由包括Al，Si和金属元素M的氧化物制成，使得Si / M的数量比设定 在包含金属元素M和Al的复合氧化物中SiO 2组成的固溶度极限的Si / M的数量比不小于Si / M，在介电常数等于 Al 2 O 3的介电常数和Al / M的数量比被设定为不小于Al / M的数量比，其中所述金属元素M的氧化物的结晶由于Al元素而被抑制，并且设定为不大于 由于金属元素M而抑制了Al 2 O 3的结晶化的数值比Al / M

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 有权
    半导体器件及制造半导体器件的方法

    公开(公告)号：US20090242963A1

    公开(公告)日：2009-10-01

    申请号：US12234197

    申请日：2008-09-19

    申请人： Masao SHINGU ,  Shoko Kikuchi ,  Akira Takashima ,  Tsunehiro Ino ,  Koichi Muraoka

    发明人： Masao SHINGU ,  Shoko Kikuchi ,  Akira Takashima ,  Tsunehiro Ino ,  Koichi Muraoka

    IPC分类号： H01L29/792 ,  H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/792 ,  H01L21/28282 ,  H01L21/31604 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66833

    摘要： In a semiconductor device, the side walls are made of SiO2, SiN or SiON, and the top insulating film or gate insulating film is made of an oxide including Al, Si, and metal element M so that the number ratio Si/M is set to no less than a number ratio Si/M at a solid solubility limit of SiO2 composition in a composite oxide including metal element M and Al and set to no more than a number ratio Si/M at the condition that the dielectric constant is equal to the dielectric constant of Al2O3 and so that the number ratio Al/M is set to no less than a number ratio Al/M where the crystallization of an oxide of said metal element M is suppressed due to the Al element and set to no more than a number ratio Al/M where the crystallization of the Al2O3 is suppressed due to the metal element M.

    摘要翻译： 在半导体器件中，侧壁由SiO 2，SiN或SiON制成，并且顶部绝缘膜或栅极绝缘膜由包括Al，Si和金属元素M的氧化物制成，使得Si / M的数量比设定 在包含金属元素M和Al的复合氧化物中SiO 2组成的固溶度极限的Si / M的数量比不小于Si / M，并且在介电常数等于 Al 2 O 3的介电常数和Al / M的数量比被设定为不小于Al / M的数量比，其中所述金属元素M的氧化物的结晶由于Al元素而被抑制，并且设定为不大于 由于金属元素M而抑制了Al 2 O 3的结晶化的数值比Al / M

    Lanthanoid aluminate film fabrication method
    9.
    发明授权
    Lanthanoid aluminate film fabrication method 有权
    镧系铝酸盐薄膜的制造方法

    公开(公告)号：US08012315B2

    公开(公告)日：2011-09-06

    申请号：US11966304

    申请日：2007-12-28

    申请人： Tsunehiro Ino ,  Akira Takashima

    发明人： Tsunehiro Ino ,  Akira Takashima

    IPC分类号： C23C14/35

    CPC分类号： C23C14/3464 ,  C23C14/08

    摘要： A method of fabricating by co-sputtering deposition a lanthanoid aluminate film with enhanced electrical insulativity owing to suppression of deviation in composition of the film is disclosed. Firstly within a vacuum chamber, hold two separate targets, one of which is made of lanthanoid aluminate (LnAlO3) and the other of which is made of aluminum oxide (Al2O3). Then, transport and load a substrate into the vacuum chamber. Next, introduce a chosen sputtering gas into this chamber. Thereafter, perform sputtering of both the targets at a time to thereby form a lanthanoid aluminate film on the substrate surface. This film is well adaptable for use as ultra-thin high dielectric constant (high-k) gate dielectrics in highly miniaturized metal oxide semiconductor (MOS) transistors.

    摘要翻译： 公开了一种通过共溅射沉积制造具有增强的电绝缘性的镧系铝酸盐膜的方法，这是因为抑制了膜的组成偏差。 首先在真空室内保持两个独立的靶，其中一个靶由铝酸镧（LnAlO3）制成，另一个由氧化铝（Al2O3）制成。 然后，将基板输送并加载到真空室中。 接下来，将选择的溅射气体引入该室。 此后，一次进行两个靶的溅射，从而在基板表面上形成镧系铝酸盐膜。 该薄膜适用于高度小型化的金属氧化物半导体（MOS）晶体管中的超薄高介电常数（高k）栅极电介质。