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8 条记录 (耗时 0.028 秒)

    Inhibiting access to a portable storage device
    2.
    发明授权
    Inhibiting access to a portable storage device 失效
    禁止访问便携式存储设备

    公开(公告)号：US07213119B2

    公开(公告)日：2007-05-01

    申请号：US10726277

    申请日：2003-12-02

    申请人： Masato Fujiwara ,  Masumi Ishiwatari ,  Takeyuki Higashibata ,  Tadashi Takayama ,  Noriyuki Suzuki ,  Hiroyasu Ito ,  Makoto Kobayashi ,  Mamoru Yoshimoto

    发明人： Masato Fujiwara ,  Masumi Ishiwatari ,  Takeyuki Higashibata ,  Tadashi Takayama ,  Noriyuki Suzuki ,  Hiroyasu Ito ,  Makoto Kobayashi ,  Mamoru Yoshimoto

    IPC分类号： G06F12/16 ,  G06F12/14

    CPC分类号： G11B33/121 ,  G06F3/0611 ,  G06F3/0632 ,  G06F3/0676 ,  G11B17/00 ,  G11B25/043 ,  H05K5/0295

    摘要： There is provided a portable storage device which makes it possible to largely reduce time that is taken to remove the storage cartridge that is inserted and cannot be handled. A removable hard disk cartridge contains a hard disk and a control circuit for control of writing and reading of data in and from the hard disk in a casing thereof. A main unit includes an automatic loading/ejecting mechanism that receives the hard disk cartridge into a predetermined inner position within the main unit and ejects the same out from the position, and a microprocessor that controls storage operation for storing data in the hard disk cartridge. Before the automatic loading/ejecting mechanism performs a receiving operation, it is determined whether access to contents recorded on the hard disk can be gained, and when the access cannot be gained, the receiving operation by the automatic loading/ejecting mechanism is inhibited.

    摘要翻译： 提供了一种便携式存储装置，其可以大大减少用于移除插入并且不能处理的存储盒的时间。 可移动硬盘盒包含硬盘和控制电路，用于控制在其外壳中从硬盘写入和读取数据。 主单元包括自动装载/卸载机构，该自动装载/卸载机构将硬盘盒接收到主单元内的预定内部位置并将其从该位置排出;以及微处理器，其控制用于将数据存储在硬盘盒中的存储操作。 在自动装载/排出机构执行接收操作之前，确定是否可以获得对记录在硬盘上的内容的访问，并且当无法获得访问时，禁止通过自动装载/弹出机构的接收操作。

    Method of forming epitaxially grown semiconductor layer on metal layer and light emitting semiconductor device comprising said semiconductor layer
    3.
    发明授权
    Method of forming epitaxially grown semiconductor layer on metal layer and light emitting semiconductor device comprising said semiconductor layer 失效
    在金属层上形成外延生长的半导体层的方法和包括所述半导体层的发光半导体器件

    公开(公告)号：US06239005B1

    公开(公告)日：2001-05-29

    申请号：US09275453

    申请日：1999-03-24

    申请人： Masatomo Sumiya ,  Mamoru Yoshimoto ,  Shunro Fuke

    发明人： Masatomo Sumiya ,  Mamoru Yoshimoto ,  Shunro Fuke

    IPC分类号： H01L2136

    CPC分类号： H01S5/0213 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/465 ,  H01S5/0425 ,  H01S5/18375 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/04

    摘要： In a method of forming a single crystal semiconductor directly on a metal layer, a metal layer is epitaxially grown on a surface an electrically insulating substrate having a single crystal structure, and a single crystal semiconductor layer is epitaxially grown on the metal layer. Particularly, on a c-face of a sapphire substrate, a platinum layer is epitaxially grown in a crystal orientation of (111) by sputtering, while the sapphire substrate is heat at about 400-700° C. After annealing at 600-900° C., a buffer layer made of gallium nitride is epitaxially grown on the platinum layer with a thickness of 500-2000 Å by MOVPE, while the sapphire substrate is heated at about 600° C. Finally, a single crystal gallium nitride layer is epitaxially grown on the buffer layer by MOVPE, while the sapphire substrate is heated at about 1000° C.

    摘要翻译： 在直接在金属层上形成单晶半导体的方法中，在具有单晶结构的电绝缘基板的表面上外延生长金属层，并且在金属层上外延生长单晶半导体层。 特别地，在蓝宝石衬底的c面上，通过溅射以（111）的晶体取向外延生长铂层，同时蓝宝石衬底在约400-700℃下加热。在600-900°退火后 通过MOVPE在厚度为500-2000的铂层上外延生长由氮化镓制成的缓冲层，同时蓝宝石衬底在约600℃下加热。最后，单晶氮化镓层外延生长 通过MOVPE在缓冲层上生长，而蓝宝石衬底在约1000℃下加热。

    Easily openable sealed container
    4.
    发明授权
    Easily openable sealed container 失效
    易开封密封容器

    公开(公告)号：US4865217A

    公开(公告)日：1989-09-12

    申请号：US236840

    申请日：1988-08-26

    申请人： Mamoru Yoshimoto

    发明人： Mamoru Yoshimoto

    IPC分类号： B32B27/08 ,  B65D17/34 ,  B65D75/64 ,  B65D77/20

    CPC分类号： B65D77/2044 ,  B32B27/08 ,  B65D2577/2033 ,  B65D2577/205 ,  B65D2577/2066 ,  B65D2577/2083

    摘要： An easily openable sealed container comprising a lid and a main body having at least a sealing layer and an adjacent layer beneath the sealing layer, wherein the main body and the lid are sealed at a part of the flange, characterized in that the sealing layer of the main body at the flange has a thickness of 10-70 .mu., the lamination strength between the sealing layer and the adjacent layer of the main body at the flange is 300-2,000 g/25 mm, and the sealing strength between the lid and sealing layer of the main body at the flange is larger than the lamination strength between the sealing layer and the adjacent layer of the main body at the flange, and further characterized in that the main body and the lid are sealed with a larger sealing pressure at least at the innermost portion of the sealed area of the flange than at the rest of the sealed area, or that the flange of the main body has double grooves and the main body and the lid are sealed between these grooves.

    Propylene packaging laminate comprising methylpentene resin blend layer
    6.
    发明授权
    Propylene packaging laminate comprising methylpentene resin blend layer 失效
    丙烯包装层压板包含甲基戊烯树脂混合层

    公开(公告)号：US5976651A

    公开(公告)日：1999-11-02

    申请号：US973196

    申请日：1997-12-03

    申请人： Yasuo Tatsumi ,  Mamoru Yoshimoto ,  Seigo Akazawa

    发明人： Yasuo Tatsumi ,  Mamoru Yoshimoto ,  Seigo Akazawa

    IPC分类号： B65D81/34 ,  B32B1/02 ,  B32B27/32 ,  B65D65/40 ,  B65D77/20 ,  B65D77/38 ,  C08L23/10 ,  C08L23/12 ,  C08L23/18 ,  C08L23/20 ,  B32B27/06

    CPC分类号： B32B27/32 ,  C08L23/10 ,  B65D2577/2033 ,  C08L23/20 ,  Y10T428/1352 ,  Y10T428/1383 ,  Y10T428/24942 ,  Y10T428/2826 ,  Y10T428/31913

    摘要： A laminate characterized by consisting of at least 4 layers and having (A) a seal layer which is a polypropylene having a melting point of at least 160.degree. C. as the first layer which is the innermost layer, (B) an adjacent layer consisting of a mixture of 20 to 90% by weight of a polypropylene and 80 to 10% by weight of a 4-methylpentene-1 resin as the second layer, (C) an intermediate layer consisting of a polypropylene having a melting point of at least 160.degree. C. and a melt index of 0.5 to 30 as the third layer and (D) a substrate layer consisting of a polypropylene having a melting point of at least 160.degree. C. and a melt index of 0.01 to 4 as the outermost layer, wherein the melt index of the seal layer (A) is at least 1.1 times the melt index of the intermediate layer (C), the melt index of the intermediate layer (C) is greater than the melt index of the substrate layer (D), the interlaminar peel strength between (A) and (B) is weaker than the interlaminar peel strength between (B) and (C), and the interlaminar peel strength between (A) and (B) is 0.2 to 2.5 kg/15 mm (drawing speed: 300 mm/min).

    摘要翻译： PCT No.PCT / JP96 / 01793 Sec。 371日期1997年12月3日第 102（e）日期1997年12月3日PCT归档1996年6月28日PCT公布。 公开号WO97 / 02141 日期1997年6月23日一种层压体，其特征在于由至少4层组成，并且（A）作为最内层的第一层，具有熔点至少为160℃的聚丙烯的密封层（B ）由20至90重量％的聚丙烯和80至10重量％的作为第二层的4-甲基戊烯-1树脂的混合物组成的相邻层，（C）由聚丙烯组成的中间层，所述聚丙烯具有 熔点至少为160℃，熔体指数为0.5〜30为第三层，（D）由熔点至少为160℃的聚丙烯和熔体指数为0.01〜 4作为最外层，其中密封层（A）的熔融指数为中间层（C）的熔体指数的至少1.1倍，中间层（C）的熔体指数大于熔体指数 基材层（D），（A）和（B）之间的层间剥离强度弱于层间剥离 （B）和（C）之间的强度，（A）和（B）之间的层间剥离强度为0.2-2.5kg / 15mm（拉伸速度：300mm / min）。

    Data I/O apparatus
    7.
    发明申请
    Data I/O apparatus 失效
    数据I / O设备

    公开(公告)号：US20060123155A1

    公开(公告)日：2006-06-08

    申请号：US11274145

    申请日：2005-11-16

    申请人： Mamoru Yoshimoto

    发明人： Mamoru Yoshimoto

    IPC分类号： G06F13/28

    CPC分类号： H04N5/765 ,  H04N5/772 ,  H04N5/775 ,  H04N5/781 ,  H04N7/165 ,  H04N9/8042 ,  H04N21/232 ,  H04N21/234363 ,  H04N21/2401

    摘要： There is provided the first storage unit for storing original data, and the second storage unit for storing meta-data. Under the control of a path control unit, an optimal connection process can be performed. As a result, a stream from the first storage unit for storing the original data can always be transmitted at maximum.

    摘要翻译： 提供了用于存储原始数据的第一存储单元和用于存储元数据的第二存储单元。 在路径控制单元的控制下，可以执行最佳的连接处理。 结果，来自用于存储原始数据的第一存储单元的流可以始终最大地发送。

    Method for stabilizing oxide-semiconductor interface by using group 5 element and stabilized semiconductor
    8.
    发明授权
    Method for stabilizing oxide-semiconductor interface by using group 5 element and stabilized semiconductor 失效
    通过使用5族元素和稳定的半导体来稳定氧化物半导体界面的方法

    公开(公告)号：US06723164B1

    公开(公告)日：2004-04-20

    申请号：US10129983

    申请日：2002-09-24

    申请人： Toyohiro Chikyo ,  Mamoru Yoshimoto

    发明人： Toyohiro Chikyo ,  Mamoru Yoshimoto

    IPC分类号： C30B2518

    CPC分类号： H01L29/517 ,  H01L21/316

    摘要： The present invention provides a method for stabilizing an oxide-semiconductor interface, which is free from the formation of an interface layer (reactive layer) between a semiconductor and an interface oxide and which thereby allows satisfactory exhibition of performance capabilities of a functional oxide and achievement of the stability of oxide-semiconductor interface, yet independent of temperature; it also provides a stabilized semiconductor.

    摘要翻译： 本发明提供一种稳定氧化物半导体界面的方法，其不会在半导体和界面氧化物之间形成界面层（反应层），从而能够令人满意地展现功能氧化物的性能和成就 的氧化物半导体界面的稳定性，但与温度无关; 它还提供了稳定的半导体。