公开(公告)号：US20050070111A1

公开(公告)日：2005-03-31

申请号：US10943983

申请日：2004-09-20

申请人： Masato Kushibiki ,  Masayuki Sawataishi ,  Akitaka Shimizu

发明人： Masato Kushibiki ,  Masayuki Sawataishi ,  Akitaka Shimizu

IPC分类号： H01L21/3065 ,  G03F7/20 ,  H01L21/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/31138 ,  H01L21/0337 ,  H01L21/32139

摘要： An etching method of the present invention includes a first and a second process. In the first process, pattern widths of a pre-patterned mask layer are increased by depositing plasma reaction products on sidewalls of the mask layer. In the second process, a layer to be etched is etched by using the mask layer as a mask having increased the pattern widths. Therefore, mask layers having different pattern densities exist in the same wafer and pattern widths of mask layers patterned through a photolithography process are uneven according to pattern densities, each pattern width of the mask layers can be made uniform. Accordingly, the pattern widths of the layer can be made uniform over an entire wafer.

摘要翻译： 本发明的蚀刻方法包括第一和第二工艺。 在第一过程中，通过在掩模层的侧壁上沉积等离子体反应产物来增加预图案化掩模层的图案宽度。 在第二过程中，通过使用掩模层作为具有增加图案宽度的掩模来蚀刻待蚀刻的层。 因此，具有不同图案密度的掩模层存在于相同的晶片中，并且通过光刻工艺图案化的掩模层的图案宽度根据图案密度不均匀，可以使掩模层的每个图案宽度均匀。 因此，可以在整个晶片上使层的图案宽度均匀。

公开(公告)号：US07256135B2

公开(公告)日：2007-08-14

申请号：US10943983

申请日：2004-09-20

申请人： Masato Kushibiki ,  Masayuki Sawataishi ,  Akitaka Shimizu

发明人： Masato Kushibiki ,  Masayuki Sawataishi ,  Akitaka Shimizu

IPC分类号： H01L21/302

CPC分类号： H01L21/31138 ,  H01L21/0337 ,  H01L21/32139

摘要： An etching method of the present invention includes a first and a second process. In the first process, pattern widths of a pre-patterned mask layer are increased by depositing plasma reaction products on sidewalls of the mask layer. In the second process, a layer to be etched is etched by using the mask layer as a mask having increased the pattern widths. Therefore, mask layers having different pattern densities exist in the same wafer and pattern widths of mask layers patterned through a photolithography process are uneven according to pattern densities, each pattern width of the mask layers can be made uniform. Accordingly, the pattern widths of the layer can be made uniform over an entire wafer.

摘要翻译： 本发明的蚀刻方法包括第一和第二工艺。 在第一过程中，通过在掩模层的侧壁上沉积等离子体反应产物来增加预图案化掩模层的图案宽度。 在第二过程中，通过使用掩模层作为具有增加图案宽度的掩模来蚀刻待蚀刻的层。 因此，具有不同图案密度的掩模层存在于相同的晶片中，并且通过光刻工艺图案化的掩模层的图案宽度根据图案密度不均匀，可以使掩模层的每个图案宽度均匀。 因此，可以在整个晶片上使层的图案宽度均匀。

公开(公告)号：US20070224828A1

公开(公告)日：2007-09-27

申请号：US11691011

申请日：2007-03-26

申请人： Masato KUSHIBIKI ,  Chie Kato ,  Akitaka Shimizu

发明人： Masato KUSHIBIKI ,  Chie Kato ,  Akitaka Shimizu

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/306

CPC分类号： H01L21/32137

摘要： A plasma etching apparatus is arranged to perform main etching for etching a poly-crystalline silicon film by use of Cl2/SF6/N2 plasma obtained by exciting Cl2 gas, SF6 gas, and N2 gas, and over etching for etching the poly-crystalline silicon film by use of Cl2/HBr/CF4 plasma obtained by exciting Cl2 gas, HBr gas, and CF4 gas. In the main etching, N2 gas is added to suppress formation of roughness on a poly-crystalline silicon surface and attain a sufficient etching rate.

摘要翻译： 等离子体蚀刻装置被布置成通过使用Cl 2/2 / SF 6 / N 2 N来进行用于蚀刻多晶硅膜的主蚀刻 通过激发Cl 2 O 2气体，SF 6气体和N 2气体获得的等离子体，以及用于蚀刻多晶硅膜的过蚀刻 使用通过激发Cl 2气体，HBr气体和CF 4

公开(公告)号：US20050045588A1

公开(公告)日：2005-03-03

申请号：US10475268

申请日：2002-02-27

申请人： Akiteru Koh ,  Toshihiro Miura ,  Takayuki Fukasawa ,  Akitaka Shimizu ,  Masato Kushibiki ,  Asao Yamashita ,  Fumihiko Higuchi

发明人： Akiteru Koh ,  Toshihiro Miura ,  Takayuki Fukasawa ,  Akitaka Shimizu ,  Masato Kushibiki ,  Asao Yamashita ,  Fumihiko Higuchi

IPC分类号： H01L21/28 ,  H01L21/3213 ,  C23F1/00

CPC分类号： H01J37/32082 ,  H01L21/28061 ,  H01L21/28123 ,  H01L21/32137

摘要： A tungsten silicide layer (104) is etched by plasma etching using Cl2+O2 gas as etching gas. When etching of the tungsten silicide layer (104) is ended substantially, etching gas is switched to Cl2+O2+NF3 and over etching is performed by plasma etching. Etching process is ended under a state where a polysilicon layer (103) formed beneath the tungsten silicide layer (104) is slightly etched uniformly. Residual quantity of the polysilicon layer (103) can be made uniform as compared with prior art and a high quality semiconductor device can be fabricated stably.

摘要翻译： 通过使用Cl 2 + O 2气体作为蚀刻气体的等离子体蚀刻来蚀刻硅化钨层（104）。 当硅化钨层（104）的蚀刻基本上结束时，蚀刻气体切换到Cl2 + O2 + NF3，并且通过等离子体蚀刻进行过蚀刻。 在钨硅化物层（104）下面形成的多晶硅层（103）被均匀地微蚀刻的状态下，结束蚀刻处理。 与现有技术相比，多晶硅层（103）的剩余量可以均匀，并且可以稳定地制造高质量的半导体器件。

公开(公告)号：US20100086670A1

公开(公告)日：2010-04-08

申请号：US12575076

申请日：2009-10-07

申请人： Masato Kushibiki ,  Eiichi Nishimura ,  Akitaka Shimizu

发明人： Masato Kushibiki ,  Eiichi Nishimura ,  Akitaka Shimizu

IPC分类号： C23C16/52 ,  B05C11/10

CPC分类号： H01J37/32935 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32963 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/76816 ,  H01L22/12 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： A substrate processing method includes performing a deposition process of depositing a thin film on the substrate while depressurizing the inside of the processing chamber and introducing the gas thereinto; and, while the deposition process is being performed, irradiating light, which is transmitted through a monitoring window installed at the processing chamber, toward the inside of the processing chamber through the monitoring window, and monitoring a reflection light intensity of reflection light by receiving the reflection light through the monitoring window. The substrate processing method further includes measuring a temporal variation in the reflection light intensity during the deposition process and calculating a termination time of the deposition process based on a measurement value of the temporal variation; and terminating the deposition process by setting the termination time as an end point of the deposition process.

摘要翻译： 基板处理方法包括：在减压处理室内部并引入气体的同时，在基板上进行沉积薄膜的沉积工艺; 并且在进行沉积处理的同时，通过监视窗将经过安装在处理室的监视窗的照射光朝向处理室的内部照射，并且通过接收该反射光来监视反射光的反射光强度 反射光通过监控窗口。 基板处理方法还包括测量沉积处理期间的反射光强度的时间变化，并且基于时间变化的测量值计算沉积处理的终止时间; 并且通过将终止时间设置为沉积过程的终点来终止沉积过程。

公开(公告)号：US08642136B2

公开(公告)日：2014-02-04

申请号：US12575076

申请日：2009-10-07

申请人： Masato Kushibiki ,  Eiichi Nishimura ,  Akitaka Shimizu

发明人： Masato Kushibiki ,  Eiichi Nishimura ,  Akitaka Shimizu

IPC分类号： H05H1/00 ,  C23C16/52 ,  B05C11/00

CPC分类号： H01J37/32935 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32963 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/76816 ,  H01L22/12 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： A substrate processing method includes performing a deposition process of depositing a thin film on the substrate while depressurizing the inside of the processing chamber and introducing the gas thereinto; and, while the deposition process is being performed, irradiating light, which is transmitted through a monitoring window installed at the processing chamber, toward the inside of the processing chamber through the monitoring window, and monitoring a reflection light intensity of reflection light by receiving the reflection light through the monitoring window. The substrate processing method further includes measuring a temporal variation in the reflection light intensity during the deposition process and calculating a termination time of the deposition process based on a measurement value of the temporal variation; and terminating the deposition process by setting the termination time as an end point of the deposition process.

摘要翻译： 基板处理方法包括：在减压处理室内部并引入气体的同时，在基板上进行沉积薄膜的沉积工艺; 并且在进行沉积处理的同时，通过监视窗将经过安装在处理室的监视窗的照射光朝向处理室的内部照射，并且通过接收该反射光来监视反射光的反射光强度 反射光通过监控窗口。 基板处理方法还包括测量沉积处理期间的反射光强度的时间变化，并且基于时间变化的测量值计算沉积处理的终止时间; 并且通过将终止时间设置为沉积过程的终点来终止沉积过程。

公开(公告)号：US07811939B2

公开(公告)日：2010-10-12

申请号：US11691011

申请日：2007-03-26

申请人： Masato Kushibiki ,  Chie Kato ,  Akitaka Shimizu

发明人： Masato Kushibiki ,  Chie Kato ,  Akitaka Shimizu

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/32137

摘要： A plasma etching apparatus is arranged to perform main etching for etching a poly-crystalline silicon film by use of Cl2/SF6/N2 plasma obtained by exciting Cl2 gas, SF6 gas, and N2 gas, and over etching for etching the poly-crystalline silicon film by use of Cl2/HBr/CF4 plasma obtained by exciting Cl2 gas, HBr gas, and CF4 gas. In the main etching, N2 gas is added to suppress formation of roughness on a poly-crystalline silicon surface and attain a sufficient etching rate.

摘要翻译： 等离子体蚀刻装置被配置为通过使用通过激发Cl 2气体，SF 6气体和N 2气体获得的Cl 2 / SF 6 / N 2等离子体进行蚀刻多晶硅膜的主蚀刻，以及蚀刻多晶硅 使用通过激发Cl 2气体，HBr气体和CF 4气体获得的Cl 2 / HBr / CF 4等离子体的膜。 在主蚀刻中，添加N 2气体以抑制多晶硅表面的粗糙度的形成，并获得足够的蚀刻速率。

公开(公告)号：US07192532B2

公开(公告)日：2007-03-20

申请号：US10475268

申请日：2002-02-27

申请人： Akiteru Koh ,  Toshihiro Miura ,  Takayuki Fukasawa ,  Akitaka Shimizu ,  Masato Kushibiki ,  Asao Yamashita ,  Fumihiko Higuchi

发明人： Akiteru Koh ,  Toshihiro Miura ,  Takayuki Fukasawa ,  Akitaka Shimizu ,  Masato Kushibiki ,  Asao Yamashita ,  Fumihiko Higuchi

IPC分类号： C03C25/68

CPC分类号： H01J37/32082 ,  H01L21/28061 ,  H01L21/28123 ,  H01L21/32137

摘要： A tungsten silicide layer (104) is etched by plasma etching using Cl2+O2 gas as etching gas. When etching of the tungsten silicide layer (104) is ended substantially, etching gas is switched to Cl2+O2+NF3 and over etching is performed by plasma etching. Etching process is ended under a state where a polysilicon layer (103) formed beneath the tungsten silicide layer (104) is slightly etched uniformly. Residual quantity of the polysilicon layer (103) can be made uniform as compared with prior art and a high quality semiconductor device can be fabricated stably.

摘要翻译： 通过使用Cl 2 O 2 + O 2气体作为蚀刻气体的等离子体蚀刻来蚀刻硅化钨层（104）。 当钨硅化物层（104）的蚀刻基本上结束时，蚀刻气体被切换到Cl 2 + O 2 + N N 3 3并过度 通过等离子体蚀刻进行蚀刻。 在钨硅化物层（104）下方形成的多晶硅层（103）被均匀地微蚀刻的状态下结束蚀刻处理。 与现有技术相比，多晶硅层（103）的剩余量可以均匀，并且可以稳定地制造高质量的半导体器件。

公开(公告)号：US07897498B2

公开(公告)日：2011-03-01

申请号：US11794325

申请日：2005-11-29

申请人： Glenn Gale ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Genji Nakamura ,  Masato Kushibiki ,  Naoki Shindo ,  Akitaka Shimizu ,  Shigeo Ashigaki ,  Yoshihiro Kato

发明人： Glenn Gale ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Genji Nakamura ,  Masato Kushibiki ,  Naoki Shindo ,  Akitaka Shimizu ,  Shigeo Ashigaki ,  Yoshihiro Kato

IPC分类号： H01L21/336 ,  H01L21/8324 ,  H01L21/76 ,  H01L21/3205 ,  H01L21/4763

CPC分类号： H01L21/28123 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32139 ,  Y10S438/931

摘要： The present invention is a method of manufacturing a semiconductor device from a layered body including: a semiconductor substrate; a high dielectric film formed on the semiconductor substrate; and an SiC-based film formed on a position upper than the high dielectric film, the SiC-based film having an anti-reflective function and a hardmask function. The present invention comprises a plasma-processing step for plasma-processing the SiC-based film and the high dielectric film to modify the SiC-based film and the high dielectric film by an action of a plasma; and a cleaning step for wet-cleaning the SiC-based film and the high dielectric film modified in the plasma-processing step to collectively remove the SiC-based film and the high dielectric film.

摘要翻译： 本发明是一种从层叠体制造半导体器件的方法，包括：半导体衬底; 形成在所述半导体基板上的高电介质膜; 以及形成在高于高介电膜的位置的SiC基膜，所述SiC基膜具有抗反射功能和硬掩模功能。 本发明包括等离子体处理步骤，用于等离子体处理SiC基膜和高介电膜，以通过等离子体的作用改性SiC基膜和高介电膜; 以及用于湿式清洁在等离子体处理步骤中改性的SiC基膜和高介电膜的清洁步骤，以共同地去除SiC基膜和高介电膜。

公开(公告)号：US07604908B2

公开(公告)日：2009-10-20

申请号：US11370149

申请日：2006-03-08

申请人： Masato Kushibiki ,  Akitaka Shimizu

发明人： Masato Kushibiki ,  Akitaka Shimizu

IPC分类号： G03F1/00

CPC分类号： G03F7/40 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32137 ,  H01L21/32139

摘要： A fine pattern forming method includes the first step of depositing a plasma reaction products on a sidewall of a patterned mask layer to increase a pattern width thereof, the second step of etching a first etching target layer by using as a mask the mask layer, the pattern width of which has been increased, the third step of filling with a mask material a space formed in the etched first etching target layer, the fourth step of etching the etched first etching target layer leaving the mask material filling the space, and the fifth step of etching a second etching target layer by using a remaining mask material as a mask.

摘要翻译： 精细图案形成方法包括在图案化掩模层的侧壁上沉积等离子体反应产物以增加其图案宽度的第一步骤，通过使用掩模层作为掩模蚀刻第一蚀刻目标层的第二步骤， 图案宽度已经增加的第三步骤，在掩模材料中填充形成在蚀刻的第一蚀刻目标层中的空间的第三步骤，蚀刻离开掩模材料填充空间的蚀刻的第一蚀刻目标层的第四步骤，以及第五步骤 通过使用剩余的掩模材料作为掩模蚀刻第二蚀刻目标层的步骤。