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    Semiconductor external optical modulator
    1.
    发明授权
    Semiconductor external optical modulator 失效
    半导体外部光调制器

    公开(公告)号：US4837526A

    公开(公告)日：1989-06-06

    申请号：US42433

    申请日：1987-04-24

    申请人： Masatoshi Suzuki ,  Yukio Noda ,  Yukitoshi Kushiro ,  Shigeyuki Akiba

    发明人： Masatoshi Suzuki ,  Yukio Noda ,  Yukitoshi Kushiro ,  Shigeyuki Akiba

    IPC分类号： G02F1/015 ,  G02F1/025

    CPC分类号： G02F1/025 ,  G02F2001/0154 ,  G02F2001/0157 ,  G02F2203/25 ,  G02F2203/255

    摘要： A semiconductor external modulator is disclosed in which the mode of polarization of incident light, the crystal plane of the substrate (the direction of application of an electrical field), the energy gap of the optical waveguide layer, and the direction of travel of light are determined so that, of variations in the real and imaginary parts of the refractive index of the optical waveguide layer which are caused by the application of the electric field to the semiconductor external optical modulator, the variation in the real part of the refractive index may be reduced to substantially zero.

    摘要翻译： 公开了一种半导体外部调制器，其中入射光的偏振模式，衬底的晶面（施加电场的方向），光波导层的能隙以及光的行进方向是 确定为使得由于对半导体外部光学调制器施加电场而导致的光波导层的折射率的实部和虚部的变化，折射率的实部的变化可以是 降至基本为零。

    Method for manufacturing semiconductor optical integrated device with optical waveguide regions
    2.
    发明授权
    Method for manufacturing semiconductor optical integrated device with optical waveguide regions 失效
    具有光波导区域的半导体光集成器件的制造方法

    公开(公告)号：US4820655A

    公开(公告)日：1989-04-11

    申请号：US15953

    申请日：1987-02-18

    申请人： Yukio Noda ,  Masatoshi Suzuki ,  Yukitoshi Kushiro ,  Shigeyuki Akiba

    发明人： Yukio Noda ,  Masatoshi Suzuki ,  Yukitoshi Kushiro ,  Shigeyuki Akiba

    IPC分类号： H01L27/15 ,  G02B6/122 ,  G02F1/025 ,  H01S5/00 ,  H01S5/026 ,  H01S5/10 ,  H01S5/12 ,  H01L21/20 ,  H01L21/203 ,  H01L21/205

    CPC分类号： H01S5/0265 ,  H01S5/1021 ,  H01S5/12

    摘要： A method for manufacturing a semiconductor optical integrated device in which a semiconductor element A having an optical waveguide region and a semiconductor element B having another optical waveguide region are integrated on a single substrate. In accordance with the present invention, there is provided steps of growing the optical waveguide region of the semiconductor element A and a protective layer therefor are grown on the entire area of the substrate surface, selectively removing them from the substrate surface in the region to be ultimately occupied by the semiconductor element B, and forming in the region the optical waveguide region of the semiconductor element B through crystal growth.

    摘要翻译： 一种半导体光学集成装置的制造方法，其中具有光波导区域的半导体元件A和具有另一个光波导区域的半导体元件B集成在单个基板上。 根据本发明，提供了在衬底表面的整个区域上生长半导体元件A的光波导区域和其保护层的步骤，从该区域中的衬底表面选择性地将其除去 最终由半导体元件B占据，并且通过晶体生长在该区域中形成半导体元件B的光波导区域。

    Integrated semiconductor light emitting element with oscillation wavelength and phase modulated light output
    5.
    发明授权
    Integrated semiconductor light emitting element with oscillation wavelength and phase modulated light output 失效
    具有振荡波长和相位调制光输出的集成半导体发光元件

    公开(公告)号：US4720835A

    公开(公告)日：1988-01-19

    申请号：US767152

    申请日：1985-08-19

    申请人： Shigeyuki Akiba ,  Katsuyuki Utaka ,  Yukio Noda ,  Yukitoshi Kushiro

    发明人： Shigeyuki Akiba ,  Katsuyuki Utaka ,  Yukio Noda ,  Yukitoshi Kushiro

    IPC分类号： G02F1/025 ,  H01S5/00 ,  H01S5/062 ,  H01S5/0625 ,  H01S5/12 ,  H01S5/16 ,  H01S3/19

    CPC分类号： H01S5/164 ,  H01S5/06258 ,  H01S5/12 ,  H01S5/06236 ,  H01S5/06246 ,  H01S5/124

    摘要： A semiconductor light emitting element is disclosed, which is provided with a light emitting region having a diffraction grating formed by periodic corrugations, a modulation region having an external waveguide layer optically connected directly to the light emitting region and a pn junction separated from a pn junction of the light emitting region and a window region formed of a semiconductor having a larger energy gap than that of a light emitting layer of the light emitting region and extending from at least one end of the light emitting region and the external waveguide layer. The refractive index of the external waveguide is varied through utilization of the electrooptic effect so that the frequency or phase of light stably oscillating at a single wavelength is precisely controlled or modulated. In particular, when the window region is formed only outside the light emitting region, frequency modulation is carried out, and when the window region is formed at least outside the modulation region, phase modulation takes place.

    摘要翻译： 公开了一种半导体发光元件，其设置有具有由周期性波纹形成的衍射光栅的发光区域，具有与发光区域直接光学连接的外部波导层的调制区域和与pn结分离的pn结 的发光区域和由与发光区域的发光层相比能量间隙大的半导体形成的窗口区域，并且从发光区域和外部波导层的至少一端延伸。 通过利用电光效应来改变外部波导的折射率，从而精确地控制或调制在单个波长处稳定振荡的光的频率或相位。 特别地，当窗口区仅形成在发光区域的外部时，进行频率调制，并且当至少在调制区域外部形成窗口区域时，进行相位调制。

    Semiconductor device with distributed bragg reflector
    7.
    发明授权
    Semiconductor device with distributed bragg reflector 失效
    分布式布拉格反射器的半导体器件

    公开(公告)号：US4796274A

    公开(公告)日：1989-01-03

    申请号：US13665

    申请日：1987-02-12

    申请人： Shigeyuki Akiba ,  Masashi Usami ,  Yukio Noda ,  Masatoshi Suzuki

    发明人： Shigeyuki Akiba ,  Masashi Usami ,  Yukio Noda ,  Masatoshi Suzuki

    IPC分类号： H01S5/00 ,  H01S5/12 ,  H01S5/125 ,  H01S3/19

    CPC分类号： H01S5/1228 ,  H01S5/12 ,  H01S5/125

    摘要： A semiconductor device with a distributed Bragg reflector is disclosed, in which periodic corrugations are formed between two semiconductor layers along the direction of travel of light. In accordance with the present invention, the periodic corrugations are formed by grid-like layers of a refractory material. The refractory material is an insulator, a refractory metal or a laminate member of an insulator and a refractory metal.

    摘要翻译： 公开了一种具有分布式布拉格反射器的半导体器件，其中沿着光的行进方向在两个半导体层之间形成周期性波纹。 根据本发明，周期性波纹由耐火材料的格子状的层形成。 耐火材料是绝缘体，难熔金属或绝缘体和难熔金属的层叠构件。

    Optical amplifier
    10.
    发明授权
    Optical amplifier 失效
    光放大器

    公开(公告)号：US6020991A

    公开(公告)日：2000-02-01

    申请号：US140708

    申请日：1998-08-26

    申请人： Mimura Yoshinori ,  Yukio Noda ,  Tetsuya Nakai ,  Toshio Tani ,  Tomomi Sudo ,  Shunichi Ohno

    发明人： Mimura Yoshinori ,  Yukio Noda ,  Tetsuya Nakai ,  Toshio Tani ,  Tomomi Sudo ,  Shunichi Ohno

    IPC分类号： H01S3/10 ,  H01S3/06 ,  H01S3/067 ,  H01S3/094 ,  H01S3/16 ,  H04B10/29 ,  H04B10/294 ,  H01S3/091

    CPC分类号： H04B10/291 ,  H01S3/094003 ,  H04B10/2912 ,  H01S3/1608 ,  H01S3/1613 ,  H01S3/1698

    摘要： A 1.3 .mu.m-band optical amplifier includes an optical amplifying fiber doped with Yb ion for emitting light in 1.02 .mu.m band by pumping of the 0.98 .mu.m band light and Pr ion for amplifying signal light by pumping of the 1.02 .mu.m band light. Both ends of the optical amplifying fiber are connected to optical fiber gratings for selectively reflecting 1.02 .mu.m band light via matching connecting members and tapered core optical fibers. The optical fiber gratings form a 1.02 .mu.m-band resonator. A Wavelength Division Multiplexing (WDM) optical coupler multiplexes the signal light and pumping light from an pumping laser and supplies the thus-multiplexed light to the optical fiber grating. The pumping laser comprises a laser device which causes laser oscillation at 0.98 .mu.m. A 1.5 .mu.m-band optical amplifier having a similar configuration is also disclosed.

    摘要翻译： 一个1.3微米的带宽光放大器包括一个掺有Yb离子的光放大光纤，用于通过泵浦0.98微米光带和Pr离子来发射1.02微米的光，并通过泵浦1.02微米的光带来放大信号光 。 光放大光纤的两端连接到光纤光栅，用于通过匹配的连接元件和锥形芯光纤选择性地反射1.02μm的带状光。 光纤光栅形成一个1.02微米的带隙谐振器。 波分复用（WDM）光耦合器复用来自激光激光器的信号光和泵浦光，并将如此复用的光提供给光纤光栅。 激光激光器包括使激光振荡在0.98μm的激光装置。 还公开了具有相似配置的1.5μm带宽光放大器。