公开(公告)号：US20090001384A1

公开(公告)日：2009-01-01

申请号：US12213882

申请日：2008-06-25

申请人： Masayoshi Kosaki ,  Yuhei Ikemoto ,  Takahiro Sonoyama ,  Hiroshi Miwa

发明人： Masayoshi Kosaki ,  Yuhei Ikemoto ,  Takahiro Sonoyama ,  Hiroshi Miwa

IPC分类号： H01L29/778 ,  H01L21/388

CPC分类号： H01L29/7787 ,  H01L29/2003

摘要： Provided is an HFET exhibiting reduced buffer leakage current. The HFET of the present invention includes an SiC substrate, an AlN layer, a graded AlGaN layer, a GaN layer, an AlGaN layer (Al compositional proportion: 20%), a source electrode, a gate electrode, and a drain electrode, wherein the AlN layer, the graded AlGaN layer, the GaN layer, and the AlGaN (Al: 20%) layer are successively stacked on the substrate, and the electrodes are formed on the AlGaN (Al: 20%) layer so as to be separated from one another. In the graded AlGaN layer, the Al compositional proportion gradually decreases from 30% (at the side facing the AlN layer) to 5% (at the side facing the GaN layer). Provision of the graded AlGaN layer reduces strain between the AlN layer and the GaN layer. Therefore, the HFET exhibits reduced buffer leakage current.

摘要翻译： 提供了具有减小的缓冲器漏电流的HFET。 本发明的HFET包括SiC衬底，AlN层，梯度AlGaN层，GaN层，AlGaN层（Al组成比例：20％），源电极，栅电极和漏电极，其中 AlN层，梯度AlGaN层，GaN层和AlGaN（Al:20％）层依次层叠在基板上，并且在AlGaN（Al:20％）层上形成电极以分离 从彼此。 在梯度AlGaN层中，Al组成比例从30％（在面向AlN层的一侧）逐渐降低到5％（在面向GaN层的一侧）。 提供梯度AlGaN层减少AlN层和GaN层之间的应变。 因此，HFET表现出减小的缓冲器漏电流。

公开(公告)号：US08420516B2

公开(公告)日：2013-04-16

申请号：US13067549

申请日：2011-06-08

申请人： Masayoshi Kosaki ,  Hiroshi Miwa

发明人： Masayoshi Kosaki ,  Hiroshi Miwa

IPC分类号： H01L21/311

CPC分类号： H01L21/0242 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02658

摘要： The present invention provides a method for producing an n-type Group III nitride semiconductor product having a high Si concentration and exhibiting favorable crystallinity. In the production method, specifically, an AlN buffer layer is formed on a sapphire substrate by MOCVD, and then a first layer (thickness: 2 μm) is formed from undoped GaN on the buffer layer by MOCVD at 1,140° C. Subsequently, a second layer (thickness: 200 nm) is formed from SiO2 on the first layer by plasma CVD, and then the second layer is removed by use of BHF (buffered hydrofluoric acid). Next, a GaN layer (thickness: 50 nm) is grown, by MOCVD at 1,140° C., on the first layer exposed by removal of the second layer without supply of an n-type dopant gas. Thus, on the first layer is provided a third layer formed of n-type GaN doped with Si at a high concentration and exhibiting favorable crystallinity.

摘要翻译： 本发明提供一种具有高Si浓度并具有良好结晶性的n型III族氮化物半导体产品的制造方法。 在制造方法中，具体而言，通过MOCVD在蓝宝石基板上形成AlN缓冲层，然后通过MOCVD在1140℃在缓冲层上由未掺杂的GaN形成第一层（厚度：2μm）。随后， 通过等离子体CVD在第一层上由SiO 2形成第二层（厚度：200nm），然后通过使用BHF（缓冲氢氟酸）除去第二层。 接下来，通过在1140℃下的MOCVD生长GaN层（厚度：50nm），在不提供n型掺杂气体的情况下，通过去除第二层而暴露的第一层上。 因此，在第一层上提供由掺杂有高浓度的Si并且具有良好结晶度的n型GaN形成的第三层。

公开(公告)号：US20110306190A1

公开(公告)日：2011-12-15

申请号：US13067549

申请日：2011-06-08

申请人： Masayoshi Kosaki ,  Hiroshi Miwa

发明人： Masayoshi Kosaki ,  Hiroshi Miwa

IPC分类号： H01L21/205 ,  B82Y40/00

CPC分类号： H01L21/0242 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02658

摘要： The present invention provides a method for producing an n-type Group III nitride semiconductor product having a high Si concentration and exhibiting favorable crystallinity. In the production method, specifically, an AlN buffer layer is formed on a sapphire substrate by MOCVD, and then a first layer (thickness: 2 μm) is formed from undoped GaN on the buffer layer by MOCVD at 1,140° C. Subsequently, a second layer (thickness: 200 nm) is formed from SiO2 on the first layer by plasma CVD, and then the second layer is removed by use of BHF (buffered hydrofluoric acid). Next, a GaN layer (thickness: 50 nm) is grown, by MOCVD at 1,140° C., on the first layer exposed by removal of the second layer without supply of an n-type dopant gas. Thus, on the first layer is provided a third layer formed of n-type GaN doped with Si at a high concentration and exhibiting favorable crystallinity.

摘要翻译： 本发明提供一种具有高Si浓度并具有良好结晶性的n型III族氮化物半导体产品的制造方法。 在制造方法中，具体而言，通过MOCVD在蓝宝石基板上形成AlN缓冲层，然后通过MOCVD在1140℃在缓冲层上由未掺杂的GaN形成第一层（厚度：2μm）。随后， 通过等离子体CVD在第一层上由SiO 2形成第二层（厚度：200nm），然后通过使用BHF（缓冲氢氟酸）除去第二层。 接下来，通过在1140℃下的MOCVD生长GaN层（厚度：50nm），在不提供n型掺杂气体的情况下，通过去除第二层而暴露的第一层上。 因此，在第一层上提供由掺杂有高浓度的Si并且具有良好结晶度的n型GaN形成的第三层。

公开(公告)号：US07432538B2

公开(公告)日：2008-10-07

申请号：US11523095

申请日：2006-09-19

申请人： Masayoshi Kosaki ,  Koji Hirata

发明人： Masayoshi Kosaki ,  Koji Hirata

IPC分类号： H01L29/778

CPC分类号： H01L29/7787 ,  H01L29/2003

摘要： A field-effect transistor includes a channel layer having a channel and a carrier supply layer, disposed on the channel layer, containing a semiconductor represented by the formula AlxGa1-xN, wherein x is greater than 0.04 and less than 0.45. The channel is formed near the interface between the channel layer and the carrier supply layer or depleted, the carrier supply layer has a band gap energy greater than that of the channel layer, and x in the formula AlxGa1-xN decreases monotonically with an increase in the distance from the interface. The channel layer may be crystalline of gallium nitride. The channel layer may be undoped. X of the formula AlxGa1-xN of the carrier supply layer is greater than or equal to 0.15 and less than or equal to 0.40 at the interface.

摘要翻译： 场效应晶体管包括具有通道的沟道层和载流子供应层，该沟道层设置在沟道层上，该沟道层包含由式Al x Ga 1-x N，其中x大于0.04且小于0.45。 通道形成在沟道层和载流子供应层之间的界面附近，或者耗尽，载流子供应层的带隙能量大于沟道层的带隙能量，并且公式A1 x x 随着与界面的距离的增加，Ga 1-x N单调减小。 沟道层可以是氮化镓的结晶。 通道层可以是未掺杂的。 载体供给层的式Al x Ga 1-x N的X在界面处大于或等于0.15且小于或等于0.40。

公开(公告)号：US20070278532A1

公开(公告)日：2007-12-06

申请号：US11578965

申请日：2005-06-09

申请人： Masayoshi Kosaki ,  Koji Hirata ,  Masanobu Senda ,  Naoki Shibata

发明人： Masayoshi Kosaki ,  Koji Hirata ,  Masanobu Senda ,  Naoki Shibata

IPC分类号： H01L29/778 ,  H01L21/335 ,  H01L21/338 ,  H01L29/812 ,  H01L21/36

CPC分类号： H01L29/66462 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003

摘要： A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.

摘要翻译： 一种场效应晶体管，其包括缓冲层和阻挡层，每个所述阻挡层由III族氮化物化合物半导体制成，并且在所述缓冲层的内部与所述阻挡层的界面处具有通道，其中所述阻挡层具有多层结构， 层结构包括构成所述阻挡层中的最低半导体层并且其组成在所述缓冲层的界面处快速变化的抗蚀剂界面提供层和构成最上半导体层并且其上表面形成的电极连接平面提供层 平面。

公开(公告)号：US20070069253A1

公开(公告)日：2007-03-29

申请号：US11386844

申请日：2006-03-23

申请人： Hiroyuki Sazawa ,  Koji Hirata ,  Masayoshi Kosaki ,  Hajime Okumura

发明人： Hiroyuki Sazawa ,  Koji Hirata ,  Masayoshi Kosaki ,  Hajime Okumura

IPC分类号： H01L29/80

CPC分类号： H01L29/7787 ,  H01L29/66462 ,  Y10S438/931

摘要： An epitaxial crystal for a field effect transistor which has a nitride-based III-V group semiconductor epitaxial crystal grown on a SiC single crystal base substrate having micropipes by use of an epitaxial growth method, wherein at least a part of the micropipes spreading from the SiC single crystal base substrate into the epitaxial crystal terminate between an active layer of the transistor and the SiC single crystal base substrate.

摘要翻译： 一种用于场效应晶体管的外延晶体，其具有通过使用外延生长法在具有微管的SiC单晶基底板上生长的基于氮化物的III-V族半导体外延晶体，其中至少部分微管从 SiC单晶基底衬底中的外延晶体终止于晶体管的有源层与SiC单晶基底之间。

公开(公告)号：US07750351B2

公开(公告)日：2010-07-06

申请号：US11386844

申请日：2006-03-23

申请人： Hiroyuki Sazawa ,  Koji Hirata ,  Masayoshi Kosaki ,  Hajime Okumura

发明人： Hiroyuki Sazawa ,  Koji Hirata ,  Masayoshi Kosaki ,  Hajime Okumura

IPC分类号： H01L23/29 ,  H01L21/04

CPC分类号： H01L29/7787 ,  H01L29/66462 ,  Y10S438/931

摘要： An epitaxial crystal for a field effect transistor which has a nitride-based III-V group semiconductor epitaxial crystal grown on a SiC single crystal base substrate having micropipes by use of an epitaxial growth method, wherein at least a part of the micropipes spreading from the SiC single crystal base substrate into the epitaxial crystal terminate between an active layer of the transistor and the SiC single crystal base substrate.

摘要翻译： 一种用于场效应晶体管的外延晶体，其具有通过使用外延生长法在具有微管的SiC单晶基底板上生长的基于氮化物的III-V族半导体外延晶体，其中至少部分微管从 SiC单晶基底衬底中的外延晶体终止于晶体管的有源层与SiC单晶基底之间。

公开(公告)号：US20070069239A1

公开(公告)日：2007-03-29

申请号：US11523740

申请日：2006-09-20

申请人： Masayoshi Kosaki ,  Koji Hirata

发明人： Masayoshi Kosaki ,  Koji Hirata

IPC分类号： H01L31/00

CPC分类号： H01L29/7787 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16

摘要： An electronic device includes a substrate; a single-crystalline first buffer layer, disposed on the substrate, containing a semiconductor represented by the formula AlxGa1-xN; a non-single-crystalline second buffer layer, disposed on the first buffer layer, containing a semiconductor represented by the formula AlyGa1-yN; and an undoped base layer, disposed on the second buffer layer, containing GaN, wherein 0

摘要翻译： 电子装置包括：基板; 设置在所述衬底上的单晶第一缓冲层，其包含由式Al x Ga 1-x N表示的半导体; 设置在第一缓冲层上的非单晶第二缓冲层，含有由式Al 1 Ga 1-y N表示的半导体; 以及设置在第二缓冲层上的含有GaN的未掺杂的基底层，其中0

公开(公告)号：US07554132B2

公开(公告)日：2009-06-30

申请号：US11523740

申请日：2006-09-20

申请人： Masayoshi Kosaki ,  Koji Hirata

发明人： Masayoshi Kosaki ,  Koji Hirata

IPC分类号： H01L31/072

CPC分类号： H01L29/7787 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16

摘要： An electronic device includes a substrate; a single-crystalline first buffer layer, disposed on the substrate, containing a semiconductor represented by the formula AlxGa1−xN; a non-single-crystalline second buffer layer, disposed on the first buffer layer, containing a semiconductor represented by the formula AlyGa1−yN; and an undoped base layer, disposed on the second buffer layer, containing GaN, wherein 0

摘要翻译： 电子装置包括：基板; 设置在所述基板上的含有由式Al x Ga 1-x N表示的半导体的单晶第一缓冲层; 设置在第一缓冲层上的含有由式Al y Ga 1-y N表示的半导体的非单晶第二缓冲层; 以及设置在第二缓冲层上的含有GaN的未掺杂的基底层，其中0

公开(公告)号：US20070063220A1

公开(公告)日：2007-03-22

申请号：US11523095

申请日：2006-09-19

申请人： Masayoshi Kosaki ,  Koji Hirata

发明人： Masayoshi Kosaki ,  Koji Hirata

IPC分类号： H01L31/00

CPC分类号： H01L29/7787 ,  H01L29/2003

摘要： A field-effect transistor includes a channel layer having a channel and a carrier supply layer, disposed on the channel layer, containing a semiconductor represented by the formula AlxGa1-xN, wherein x is greater than 0.04 and less than 0.45. The channel is formed near the interface between the channel layer and the carrier supply layer or depleted, the carrier supply layer has a band gap energy greater than that of the channel layer, and x in the formula AlxGa1-xN decreases monotonically with an increase in the distance from the interface. The channel layer may be crystalline of gallium nitride. The channel layer may be undoped. X of the formula AlxGa1-xN of the carrier supply layer is greater than or equal to 0.15 and less than or equal to 0.40 at the interface.

摘要翻译： 场效应晶体管包括具有通道的沟道层和载流子供应层，该沟道层设置在沟道层上，该沟道层包含由式Al x Ga 1-x N，其中x大于0.04且小于0.45。 通道形成在沟道层和载流子供应层之间的界面附近，或者耗尽，载流子供应层的带隙能量大于沟道层的带隙能量，并且公式A1 x x 随着与界面的距离的增加，Ga 1-x N单调减小。 沟道层可以是氮化镓的结晶。 通道层可以是未掺杂的。 载体供给层的式Al x Ga 1-x N的X在界面处大于或等于0.15且小于或等于0.40。