Abstract:
A solid-state image sensing apparatus which can improve the S/N ratio without enlarging the chip area in both of the mode in which pixel signals are summed and the mode in which pixel signals are not summed is provided. The solid-state image sensing apparatus includes an image sensing region 510 in which a plurality of unit cells 500 is laid out two-dimensionally, the first vertical signal line 520, a row selection circuit 530, a column selection circuit 560, a horizontal signal line 570 and a signal processing unit 100, having a sampling capacitors which accumulate signals corresponding to amplified signals of the unit cells, which selects the case of summing the signals or the case of not summing the signals, wherein the capacitance of the sampling capacitor which accumulates a signal corresponding to an amplified signal of a unit cell for each row when the sum is performed is smaller than the capacitance required for reading out the signal from said capacitor.
Abstract:
By providing dummy pixels separately from effective pixels, the total number of pixel rows is equalized with the number of horizontal sync signals included in one frame interval (which is called an “HD number”). A period during which a reset signal for an electronic shuttering operation is being supplied to an arbitrary pixel row overlaps with a period during which another pixel row is selected to perform a readout operation thereon. Thus, it is possible to suppress a variation in reset potential among effective pixels.
Abstract:
The image pickup device comprises: an image pickup unit 1 in which a plurality of unit cells for generating reset and read voltages are arranged; a noise eliminating unit 6 for generating, with respect to each unit cell, a differential voltage corresponding to a difference between the reset and read voltages; and output units 5 and 7 for outputting the read and differential voltages, respectively, to a signal processing apparatus. The signal processing apparatus comprises: a judging unit 8 for judging whether each of the read voltages is within a predetermined range; and a system output unit 9 for outputting, for unit cells whose voltages are judged as being within the predetermined range, corresponding differential voltages as luminance information of the unit cells; for unit cells whose voltages are judged as not being within the predetermined range, a predetermined voltage indicating high luminance as luminance information of the unit cells.
Abstract:
The output voltage of a pixel is held as a reference signal output voltage in a reference signal holding capacitor connected to a positive input terminal of a second subtractor by lowering the potential of a reset voltage to that of a calibration voltage and by activating a reset pulse and a reference-signal-calibrating pulse. Then, the reference signal output voltage is output from the second subtractor. And a corrected reference signal output voltage, obtained by subtracting the reference signal output voltage from a no signal output voltage, is held in a corrected reference signal holding capacitor. Moreover, a divider divides a corrected original signal output voltage, which is held in a corrected original signal holding capacitor, by the corrected reference signal output voltage, which is held in the corrected reference signal holding capacitor.
Abstract:
The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interior of the hole has a greater diameter than an opening of the hole, and at least a portion of the closed cavity or the hole is formed within the silicon oxide film. The invention also provides a method of manufacturing this semiconductor device.
Abstract:
A physical quantity distribution sensor is disclosed. The sensor comprises: a plurality of sensor/storage sections each having a sensor element for sensing a received physical quantity and a storage element for storing the information of physical quantity sensed by the sensor element; a selector for selecting at least one of the sensor/storage sections; and a plurality of buffers each capable of detecting and supplying the information stored in at least one selected sensor/storage section. This sensor further comprises at least one selection signal transfer line for transferring an output of the selector. Power supply input portions of the buffers are connected to the selection signal transfer line, and the buffers are operated using, as a power voltage, an output of the selector entered into the buffers through the selection signal transfer line.
Abstract:
A physical quantity distribution sensor including a plurality of unit cells. Each unit cell includes an information storage region responsive to a physical stimulus and capable of a transition from a first electrical potential state to a second electrical potential state according to the physical stimulus, a driving element for providing at an output portion thereof an electrical potential according to the electrical potential state of the information storage region, and a switching element for selecting the unit cell. The physical quantity distribution sensor further includes an output adjustment section capable of adjusting the first electrical potential state of the information storage region in order that the output of the selected driving element may substantially equal a reference electrical potential at the time when the switching element is in the conductive state.
Abstract:
A solid-state imaging device includes first-group pixels 41, second-group pixels 42 skipped during thinning drive, and a scanning section 13. The scanning section 13 drives each of the first-group pixels 41 to perform read operation of outputting the output signal and initializing the amount of the signal charge accumulated in the photoelectric conversion element to a first level, and also drives each of the second-group pixels 42 to perform discharge operation of initializing the amount of the signal charge accumulated in the photoelectric conversion element to a second level that is higher than the first level and lower than a saturation signal level of the photoelectric conversion element 12.
Abstract:
An amplification type solid state imaging device in use includes at least a light-receiving portion 10 formed by arranging on a semiconductor substrate 7 one-dimensionally or two-dimensionally a plurality of pixels that convert incident light to signal charge and output electric signals corresponding to the amount of the signal charge, a reader for reading out sequentially the electric signals from the respective pixels, a noise rejection circuit 11 for suppressing spurious signals for the electric signals read out by the reader, and a first light-shielding layer 1 positioned on the upper part of the light-receiving portion 10 so as to restrict entry of light into parts other than photoelectric conversion portions 10a of the pixels. Furthermore, a second light-shielding layer 2 for restricting entry of light into the noise rejection circuit 11 is provided on the upper part of the noise rejection circuit 11.
Abstract:
A solid-state imaging device includes first-group pixels 41, second-group pixels 42 skipped during thinning drive, and a scanning section 13. The scanning section 13 drives each of the first-group pixels 41 to perform read operation of outputting the output signal and initializing the amount of the signal charge accumulated in the photoelectric conversion element to a first level, and also drives each of the second-group pixels 42 to perform discharge operation of initializing the amount of the signal charge accumulated in the photoelectric conversion element to a second level that is higher than the first level and lower than a saturation signal level of the photoelectric conversion element 12.