公开(公告)号：US07982220B2

公开(公告)日：2011-07-19

申请号：US12834057

申请日：2010-07-12

申请人： Masayuki Sakakura ,  Hiroyuki Miyake

发明人： Masayuki Sakakura ,  Hiroyuki Miyake

IPC分类号： H01L33/00

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/1274 ,  H01L27/3244

摘要： In a case where a p-channel thin film transistor is used as a thin film transistor that is electrically connected to a light-emitting element and drives the light-emitting element, a value of cutoff current of the p-channel thin film transistor is made lower than that of a p-channel thin film transistor of a driver circuit. Specifically, channel doping is selectively performed on a semiconductor layer of a thin film transistor included in a pixel.

摘要翻译： 在使用p沟道薄膜晶体管作为电连接到发光元件并驱动发光元件的薄膜晶体管的情况下，p沟道薄膜晶体管的截止电流值为 比驱动电路的p沟道薄膜晶体管低。 具体地，在包括在像素中的薄膜晶体管的半导体层上选择性地进行沟道掺杂。

公开(公告)号：US07781768B2

公开(公告)日：2010-08-24

申请号：US11819154

申请日：2007-06-25

申请人： Masayuki Sakakura ,  Hiroyuki Miyake

发明人： Masayuki Sakakura ,  Hiroyuki Miyake

IPC分类号： H01L33/00

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/1274 ,  H01L27/3244

摘要： In a case where a p-channel thin film transistor is used as a thin film transistor that is electrically connected to a light-emitting element and drives the light-emitting element, a value of cutoff current of the p-channel thin film transistor is made lower than that of a p-channel thin film transistor of a driver circuit. Specifically, channel doping is selectively performed on a semiconductor layer of a thin film transistor included in a pixel.

摘要翻译： 在使用p沟道薄膜晶体管作为电连接到发光元件并驱动发光元件的薄膜晶体管的情况下，p沟道薄膜晶体管的截止电流值为 比驱动电路的p沟道薄膜晶体管低。 具体地，在包括在像素中的薄膜晶体管的半导体层上选择性地进行沟道掺杂。

公开(公告)号：US20080001156A1

公开(公告)日：2008-01-03

申请号：US11819154

申请日：2007-06-25

申请人： Masayuki Sakakura ,  Hiroyuki Miyake

发明人： Masayuki Sakakura ,  Hiroyuki Miyake

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/1274 ,  H01L27/3244

摘要： In a case where a p-channel thin film transistor is used as a thin film transistor that is electrically connected to a light-emitting element and drives the light-emitting element, a value of cutoff current of the p-channel thin film transistor is made lower than that of a p-channel thin film transistor of a driver circuit. Specifically, channel doping is selectively performed on a semiconductor layer of a thin film transistor included in a pixel.

摘要翻译： 在使用p沟道薄膜晶体管作为电连接到发光元件并驱动发光元件的薄膜晶体管的情况下，p沟道薄膜晶体管的截止电流值为 比驱动电路的p沟道薄膜晶体管低。 具体地，在包括在像素中的薄膜晶体管的半导体层上选择性地进行沟道掺杂。

公开(公告)号：US08471258B2

公开(公告)日：2013-06-25

申请号：US13153561

申请日：2011-06-06

申请人： Masayuki Sakakura ,  Hiroyuki Miyake

发明人： Masayuki Sakakura ,  Hiroyuki Miyake

IPC分类号： H01L33/00

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/1274 ,  H01L27/3244

摘要： In a case where a p-channel thin film transistor is used as a thin film transistor that is electrically connected to a light-emitting element and drives the light-emitting element, a value of cutoff current of the p-channel thin film transistor is made lower than that of a p-channel thin film transistor of a driver circuit. Specifically, channel doping is selectively performed on a semiconductor layer of a thin film transistor included in a pixel.

摘要翻译： 在使用p沟道薄膜晶体管作为电连接到发光元件并驱动发光元件的薄膜晶体管的情况下，p沟道薄膜晶体管的截止电流值为 比驱动电路的p沟道薄膜晶体管低。 具体地，在包括在像素中的薄膜晶体管的半导体层上选择性地进行沟道掺杂。

公开(公告)号：US09099395B2

公开(公告)日：2015-08-04

申请号：US13366933

申请日：2012-02-06

申请人： Masayuki Sakakura ,  Shunpei Yamazaki

发明人： Masayuki Sakakura ,  Shunpei Yamazaki

IPC分类号： H01L21/00 ,  H01L27/28 ,  H01L29/786 ,  H01L27/12 ,  H01L29/423

CPC分类号： H01L29/78645 ,  H01L27/12 ,  H01L27/124 ,  H01L27/283 ,  H01L29/42384 ,  H01L29/78696

摘要： It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer including two channel regions connected in series formed between a source region and a drain region, and a high concentration impurity region is formed between the two channel regions; the channel length of the channel region adjacent to the source region is longer than the channel length of the channel region adjacent to the drain region.

摘要翻译： 本发明的目的是提供一种具有新的多重结构的晶体管，其中提高了操作特性和可靠性。 在具有多重结构的晶体管中，其包括彼此电连接的两个栅电极和包括在源区和漏区之间串联连接的两个沟道区的半导体层，并且在两者之间形成高浓度杂质区 渠道区域; 与源极区域相邻的沟道区域的沟道长度比与漏极区域相邻的沟道区域的沟道长度长。

公开(公告)号：US09006043B2

公开(公告)日：2015-04-14

申请号：US13449383

申请日：2012-04-18

申请人： Hideto Ohnuma ,  Masayuki Sakakura

发明人： Hideto Ohnuma ,  Masayuki Sakakura

IPC分类号： H01L21/00 ,  H01L21/027 ,  H01L27/12 ,  H01L27/32 ,  H01L51/52

CPC分类号： H01L27/127 ,  H01L21/0273 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/3244 ,  H01L27/3276 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/5259

摘要： The invention provides a technique to manufacture a highly reliable semiconductor device and a display device at high yield. As an exposure mask, an exposure mask provided with a diffraction grating pattern or an auxiliary pattern formed of a semi-transmissive film with a light intensity reducing function is used. With such an exposure mask, various light exposures can be more accurately controlled, which enables a resist to be processed into a more accurate shape. Therefore, when such a mask layer is used, the conductive film and the insulating film can be processed in the same step into different shapes in accordance with desired performances. As a result, thin film transistors with different characteristics, wires in different sizes and shapes, and the like can be manufactured without increasing the number of steps.

摘要翻译： 本发明提供了以高产率制造高度可靠的半导体器件和显示器件的技术。 作为曝光掩模，使用设置有衍射光栅图案的曝光掩模或由具有光强度降低功能的半透射膜形成的辅助图案。 通过这种曝光掩模，可以更精确地控制各种光照射，这使得抗蚀剂能够被加工成更准确的形状。 因此，当使用这种掩模层时，导电膜和绝缘膜可以根据期望的性能在同一步骤中被加工成不同的形状。 结果，可以在不增加步数的情况下制造具有不同特性的薄膜晶体管，不同尺寸和形状的导线等。

公开(公告)号：US08804060B2

公开(公告)日：2014-08-12

申请号：US12558618

申请日：2009-09-14

申请人： Masayuki Sakakura ,  Hideto Ohnuma ,  Hideaki Kuwabara

发明人： Masayuki Sakakura ,  Hideto Ohnuma ,  Hideaki Kuwabara

IPC分类号： G02F1/136 ,  H01L27/12 ,  H01L27/32

CPC分类号： H01L27/1244 ,  H01L21/32139 ,  H01L21/76816 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76886 ,  H01L23/528 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1274 ,  H01L27/1288 ,  H01L27/3276 ,  H01L2924/0002 ,  H01L2924/00

摘要： It is an object of the present invention to provide a method for preventing a breaking and poor contact, without increasing the number of steps, thereby forming an integrated circuit with high driving performance and reliability. The present invention applies a photo mask or a reticle each of which is provided with a diffraction grating pattern or with an auxiliary pattern formed of a semi-translucent film having a light intensity reducing function to a photolithography step for forming wires in an overlapping portion of wires. And a conductive film to serve as a lower wire of a two-layer structure is formed, and then, a resist pattern is formed so that a first layer of the lower wire and a second layer narrower than the first layer are formed for relieving a steep step.

摘要翻译： 本发明的目的是提供一种防止接触不良而不增加步数的方法，从而形成具有高驱动性能和可靠性的集成电路。 本发明应用了一种光掩模或掩模版，每个光掩模或光掩模具有衍射光栅图案或由具有光强度降低功能的半透明膜形成的辅助图案，用于在光刻步骤中形成导线的重叠部分 电线 并且形成用作二层结构的下导线的导电膜，然后形成抗蚀剂图案，使得形成下线的第一层和比第一层窄的第二层以缓解 陡峭的一步。

公开(公告)号：US08785949B2

公开(公告)日：2014-07-22

申请号：US13417362

申请日：2012-03-12

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

IPC分类号： H01L27/15 ,  H01L29/267 ,  H01L31/12

CPC分类号： H01L27/3244 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/3246 ,  H01L27/3258 ,  H01L29/16 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78696 ,  H01L51/5008 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/566

摘要： The light-emitting apparatus comprising thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer on the upper and side surfaces of the second organic insulation layer and having an opening over the anode, an organic compound layer in contact with the anode and the fourth inorganic insulation layer and containing light-emitting material, and a cathode in contact with the organic compound layer, wherein the third and the fourth inorganic insulation layers comprise silicon nitride or aluminum nitride.

摘要翻译： 包括薄膜晶体管和发光元件的发光装置包括： 栅电极上的第二无机绝缘层，第二无机绝缘层上的第一有机绝缘层，第一有机绝缘层上的第三无机绝缘层，第三无机绝缘层上的阳极，与第三有机绝缘层重叠的第二有机绝缘层 阳极的端部具有35度至45度的倾斜角度，在第二有机绝缘层的上表面和侧表面上的第四无机绝缘层，并且在阳极上具有开口，与阳极接触的有机化合物层 和第四无机绝缘层并含有发光材料，以及与有机化合物层接触的阴极，其中第三和第四无机绝缘层包括氮化硅或氮化铝。

公开(公告)号：US08742422B2

公开(公告)日：2014-06-03

申请号：US12871148

申请日：2010-08-30

申请人： Masayuki Sakakura ,  Yoshiaki Oikawa ,  Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba

发明人： Masayuki Sakakura ,  Yoshiaki Oikawa ,  Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba

IPC分类号： H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC分类号： H01L27/124 ,  G02F1/134309 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2202/10 ,  H01L27/1225 ,  H01L27/1255

摘要： The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

摘要翻译： 半导体器件包括驱动器电路部分，其包括驱动器电路和包括像素的像素部分。 像素包括具有透光性的栅极电极层，栅极绝缘层，源极电极层和漏极电极层，其各自具有设置在栅极绝缘层上的透光性，覆盖顶表面的氧化物半导体层和 源极电极层和漏极电极层的侧面，并且在栅电极层之间设置有栅极绝缘层，导电层设置在氧化物半导体层的一部分上，并且具有比源极电极层和漏极 电极层和与氧化物半导体层的一部分接触的氧化物绝缘层。

公开(公告)号：US08633473B2

公开(公告)日：2014-01-21

申请号：US11318783

申请日：2005-12-27

申请人： Takeshi Noda ,  Masayuki Sakakura ,  Yasuyuki Arai ,  Yuko Tachimura

发明人： Takeshi Noda ,  Masayuki Sakakura ,  Yasuyuki Arai ,  Yuko Tachimura

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L33/58 ,  H01L27/322 ,  H01L27/3244 ,  H01L33/44 ,  H01L33/60 ,  H01L51/5281 ,  H01L2251/558

摘要： It is an object of the present invention to provide a high-contrast light-emitting device without using a polarization plate. In particular, it is an object of the present invention to make contrast control simpler for a light-emitting device provided with a color filter.A light-emitting device according to the present invention has a feature of having a structure for reducing reflection of light from a light-emitting later at a reflective electrode, and further, has a feature of absorbing wavelengths other than the light by a color filter to enhance the contrast. Accordingly, contrast control can be performed in consideration of only a luminescence component from the light-emitting layer, and is thus made simpler.

摘要翻译： 本发明的目的是提供一种不使用偏光板的高对比度发光装置。 特别地，本发明的目的是为具有滤色器的发光装置对对比度控制更简单。 根据本发明的发光器件具有的特征在于具有减少来自反射电极的稍后发光的光的反射的结构，并且还具有通过滤色器吸收除了光之外的波长的特征 以增强对比度。 因此，可以仅考虑来自发光层的发光成分来进行对比度控制，从而变得更简单。