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    Optical system of microlithographic projection exposure apparatus and method of correcting wavefront deformation in same
    1.
    发明授权
    Optical system of microlithographic projection exposure apparatus and method of correcting wavefront deformation in same 有权
    光刻投影曝光装置的光学系统及其波前变形校正方法

    公开(公告)号：US09081310B2

    公开(公告)日：2015-07-14

    申请号：US13604941

    申请日：2012-09-06

    申请人： Matthias Exler ,  Ulrich Loering ,  Toralf Gruner ,  Holger Walter

    发明人： Matthias Exler ,  Ulrich Loering ,  Toralf Gruner ,  Holger Walter

    IPC分类号： G03B27/54 ,  G03B27/52 ,  G03F7/20

    CPC分类号： G03F7/70891 ,  G03F7/70266 ,  G03F7/70341

    摘要： An optical system of a microlithographic projection exposure apparatus includes a wavefront correction device which has a plurality of fluid outlet apertures. The apertures are arranged so that fluid flows emerging from the outlet apertures enter a space through which projection light propagates during operation of the apparatus. A temperature controller sets the temperature of the fluid flows individually for each fluid flow. The temperature distribution is determined such that optical path length differences caused by the temperature distribution correct wavefront deformations.

    摘要翻译： 微光刻投影曝光装置的光学系统包括具有多个流体出口孔的波前校正装置。 孔被布置成使得从出口孔流出的流体流入入射装置操作期间投射光通过该空间传播的空间。 温度控制器为每个流体流量分别设定流体流的温度。 确定温度分布，使得由温度分布导致的光程长度差校正波前变形。

    OPTICAL SYSTEM OF MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS AND METHOD OF CORRECTING WAVEFRONT DEFORMATION IN SAME
    2.
    发明申请
    OPTICAL SYSTEM OF MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS AND METHOD OF CORRECTING WAVEFRONT DEFORMATION IN SAME 有权
    微波投影曝光装置的光学系统及其修正波形变形的方法

    公开(公告)号：US20130016331A1

    公开(公告)日：2013-01-17

    申请号：US13604941

    申请日：2012-09-06

    申请人： Matthias Exler ,  Ulrich Loering ,  Toralf Gruner ,  Holger Walter

    发明人： Matthias Exler ,  Ulrich Loering ,  Toralf Gruner ,  Holger Walter

    IPC分类号： G03B27/52

    CPC分类号： G03F7/70891 ,  G03F7/70266 ,  G03F7/70341

    摘要： An optical system of a microlithographic projection exposure apparatus includes a wavefront correction device which has a plurality of fluid outlet apertures. The apertures are arranged so that fluid flows emerging from the outlet apertures enter a space through which projection light propagates during operation of the apparatus. A temperature controller sets the temperature of the fluid flows individually for each fluid flow. The temperature distribution is determined such that optical path length differences caused by the temperature distribution correct wavefront deformations.

    摘要翻译： 微光刻投影曝光装置的光学系统包括具有多个流体出口孔的波前校正装置。 孔被布置成使得从出口孔流出的流体流入入射装置操作期间投射光通过该空间传播的空间。 温度控制器为每个流体流量分别设定流体流的温度。 确定温度分布，使得由温度分布导致的光程长度差校正波前变形。

    Symmetrical objective having four lens groups for microlithography
    9.
    发明授权
    Symmetrical objective having four lens groups for microlithography 有权
    具有用于微光刻的四个透镜组的对称物镜

    公开(公告)号：US07697211B2

    公开(公告)日：2010-04-13

    申请号：US12257156

    申请日：2008-10-23

    申请人： David R. Shafer ,  Aurelian Dodoc ,  Johannes Zellner ,  Heiko Feldmann ,  Wilhelm Ulrich ,  Holger Walter ,  Ulrich Loering ,  Daniel Kraehmer ,  Gerhard Fuerter

    发明人： David R. Shafer ,  Aurelian Dodoc ,  Johannes Zellner ,  Heiko Feldmann ,  Wilhelm Ulrich ,  Holger Walter ,  Ulrich Loering ,  Daniel Kraehmer ,  Gerhard Fuerter

    IPC分类号： G02B27/30

    CPC分类号： G02B13/143 ,  G02B13/26 ,  G03F7/70241

    摘要： The invention features a system for microlithography that includes a mercury light source configured to emit radiation at multiple mercury emission lines, a projection objective positioned to receive radiation emitted by the mercury light source, and a stage configured to position a wafer relative to the projection objective. During operation, the projection objective directs radiation from the light source to the wafer, where the radiation at the wafer includes energy from more than one of the emission lines. Optical lens systems for use in said projection objective comprise four lens groups, each having two lenses comprising silica, the first and second lens groups on one hand and the third and fourth lens groups on the other hand are positioned symmetrically with respect to a plane perpendicular to the optical axis of said lens system.

    摘要翻译： 本发明的特征在于一种用于微光刻的系统，其包括配置成在多个汞发射线处发射辐射的水银光源，设置成接收由水银光源发射的辐射的投影物镜，以及被配置为相对于投影物镜定位晶片的台 。 在操作期间，投影物镜将来自光源的辐射引导到晶片，其中晶片处的辐射包括来自多于一个发射线的能量。 用于所述投影物镜的光学透镜系统包括四个透镜组，每个透镜组具有包括二氧化硅的两个透镜，另一方面，第一和第二透镜组以及第三透镜组和第四透镜组相对于垂直的平面对称地定位 到所述透镜系统的光轴。

    SYMMETRICAL OBJECTIVE HAVING FOUR LENS GROUPS FOR MICROLITHOGRAPHY
    10.
    发明申请
    SYMMETRICAL OBJECTIVE HAVING FOUR LENS GROUPS FOR MICROLITHOGRAPHY 有权
    具有四个用于微结构的镜片组的对称目标

    公开(公告)号：US20090080086A1

    公开(公告)日：2009-03-26

    申请号：US12257156

    申请日：2008-10-23

    申请人： David R. Shafer ,  Aurelian Dodoc ,  Johannes Zellner ,  Heiko Feldmann ,  Wilhelm Ulrich ,  Holger Walter ,  Ulrich Loering ,  Daniel Kraehmer ,  Gerhard Fuerter

    发明人： David R. Shafer ,  Aurelian Dodoc ,  Johannes Zellner ,  Heiko Feldmann ,  Wilhelm Ulrich ,  Holger Walter ,  Ulrich Loering ,  Daniel Kraehmer ,  Gerhard Fuerter

    IPC分类号： G02B27/18 ,  G02B11/28 ,  G02B11/04

    CPC分类号： G02B13/143 ,  G02B13/26 ,  G03F7/70241

    摘要： The invention features a system for microlithography that includes a mercury light source configured to emit radiation at multiple mercury emission lines, a projection objective positioned to receive radiation emitted by the mercury light source, and a stage configured to position a wafer relative to the projection objective. During operation, the projection objective directs radiation from the light source to the wafer, where the radiation at the wafer includes energy from more than one of the emission lines. Optical lens systems for use in said projection objective comprise four lens groups, each having two lenses comprising silica, the first and second lens groups on one hand and the third and fourth lens groups on the other hand are positioned symmetrically with respect to a plane perpendicular to the optical axis of said lens system.

    摘要翻译： 本发明的特征在于一种用于微光刻的系统，其包括配置成在多个汞发射线处发射辐射的水银光源，设置成接收由水银光源发射的辐射的投影物镜，以及被配置为相对于投影物镜定位晶片的台 。 在操作期间，投影物镜将来自光源的辐射引导到晶片，其中晶片处的辐射包括来自多于一个发射线的能量。 用于所述投影物镜的光学透镜系统包括四个透镜组，每个透镜组具有包括二氧化硅的两个透镜，另一方面，第一和第二透镜组以及第三透镜组和第四透镜组相对于垂直的平面对称地定位 到所述透镜系统的光轴。