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    Thin layer element and associated fabrication process
    3.
    发明授权
    Thin layer element and associated fabrication process 有权
    薄层元件及相关制造工艺

    公开(公告)号：US07579226B2

    公开(公告)日：2009-08-25

    申请号：US11211255

    申请日：2005-08-19

    申请人： Jean-Charles Barbe ,  Maud Vinet ,  Olivier Faynot

    发明人： Jean-Charles Barbe ,  Maud Vinet ,  Olivier Faynot

    IPC分类号： H01L21/00

    CPC分类号： H01L21/26586

    摘要： A method is provided for fabricating a thin layer element, in which a layer of a first material supports a pattern of a second material having a thickness of less than 15 nm, including a step of doping by implanting a chemical species over at least a portion of the layer-pattern assembly to stabilize the pattern on the layer.

    摘要翻译： 提供了一种用于制造薄层元件的方法，其中第一材料层支撑厚度小于15nm的第二材料的图案，包括通过在至少一部分上植入化学物质来掺杂的步骤 的层图案组件以使层上的图案稳定。

    Anchoring, by lateral oxidizing, of patterns of a thin film to prevent the dewetting phenomenon
    4.
    发明授权
    Anchoring, by lateral oxidizing, of patterns of a thin film to prevent the dewetting phenomenon 失效
    通过横向氧化锚定薄膜的图案以防止去湿现象

    公开(公告)号：US07510919B2

    公开(公告)日：2009-03-31

    申请号：US11178337

    申请日：2005-07-12

    申请人： Jean-Charles Barbe ,  Maud Vinet ,  Béatrice Drevet ,  Carine Jahan

    发明人： Jean-Charles Barbe ,  Maud Vinet ,  Béatrice Drevet ,  Carine Jahan

    IPC分类号： H01L21/84

    CPC分类号： H01L21/78 ,  H01L21/76205 ,  H01L21/76281 ,  H01L21/84 ,  H01L21/86

    摘要： The invention relates to a thin film having a thickness of less than 10 nm, made of oxidizable semi-conductor material and patterned in the form of patterns. To prevent the dewetting phenomenon of said patterns, lateral oxidized zones are arranged at the periphery of each pattern of the thin film so as to form an anchoring.This anchoring can be achieved by forming an oxide layer over the whole of the thin film and then depositing a nitride layer. Then the nitride and oxide layers and the thin film are patterned and the thin film is laterally oxidized so that each pattern of the thin film comprises, at the periphery thereof, an oxidized zone of predetermined width. The nitride and oxide layers are then removed so as to release the patterns oxidized at their periphery.

    摘要翻译： 本发明涉及厚度小于10nm的薄膜，由可氧化半导体材料制成并以图案形式图案化。 为了防止所述图案的去湿现象，横向氧化区被布置在薄膜的每个图案的周边，以形成锚定。 该锚定可以通过在整个薄膜上形成氧化物层然后沉积氮化物层来实现。 然后对氮化物和氧化物层和薄膜进行图案化，并且薄膜被横向氧化，使得薄膜的每个图案在其周围包含预定宽度的氧化区。 然后去除氮化物和氧化物层，以便释放在其周边氧化的图案。

    Method for insulating patterns formed in a thin film of oxidizable semi-conducting material
    5.
    发明申请
    Method for insulating patterns formed in a thin film of oxidizable semi-conducting material 失效

    公开(公告)号：US20060121653A1

    公开(公告)日：2006-06-08

    申请号：US11291918

    申请日：2005-12-02

    申请人： Maud Vinet ,  Jean-Charles Barbe ,  Bernard Previtali ,  Thierry Poiroux

    发明人： Maud Vinet ,  Jean-Charles Barbe ,  Bernard Previtali ,  Thierry Poiroux

    IPC分类号： H01L21/84 ,  H01L21/00

    CPC分类号： H01L21/76202

    摘要： A method for insulating patterns formed in a thin film made of a first oxidizable semi-conducting material, with a thickness less than or equal to 20 nm and preferably less than or equal to 10 nm, successively comprises: formation, on the thin film, of a mask defining, in the thin film, free zones and zones covered by the mask designed to substantially form the patterns, selective formation, at the level of the free zones of the thin film, of an additional layer formed by an oxide of a second semi-conducting material, oxidization of the free zones of the thin film, removal of the mask so as to release the thin film patterned in the form of patterns insulated by oxidized zones. The first and second semi-conducting materials can be identical and the step of selective formation of the additional layer can be performed by selective epitaxial growth of the free zones of the thin film.

    Method for insulating patterns formed in a thin film of oxidizable semi-conducting material
    7.
    发明授权
    Method for insulating patterns formed in a thin film of oxidizable semi-conducting material 失效
    在可氧化半导体材料薄膜中形成绝缘图案的方法

    公开(公告)号：US07473588B2

    公开(公告)日：2009-01-06

    申请号：US11291918

    申请日：2005-12-02

    申请人： Maud Vinet ,  Jean-Charles Barbe ,  Bernard Previtali ,  Thierry Poiroux

    发明人： Maud Vinet ,  Jean-Charles Barbe ,  Bernard Previtali ,  Thierry Poiroux

    IPC分类号： H01L21/00

    CPC分类号： H01L21/76202

    摘要： A method for insulating patterns formed in a thin film made of a first oxidizable semi-conducting material, with a thickness less than or equal to 20 nm and preferably less than or equal to 10 nm, successively comprises: formation, on the thin film, of a mask defining, in the thin film, free zones and zones covered by the mask designed to substantially form the patterns, selective formation, at the level of the free zones of the thin film, of an additional layer formed by an oxide of a second semi-conducting material, oxidization of the free zones of the thin film, removal of the mask so as to release the thin film patterned in the form of patterns insulated by oxidized zones. The first and second semi-conducting materials can be identical and the step of selective formation of the additional layer can be performed by selective epitaxial growth of the free zones of the thin film.

    摘要翻译： 一种绝缘图案，其形成在厚度小于或等于20nm，优选小于或等于10nm的第一可氧化半导电材料制成的薄膜中，依次包括：在薄膜上形成， 在薄膜中限定由掩模覆盖的自由区域和设置成基本上形成图案的区域，在薄膜的自由区域的选择性地形成由氧化物形成的附加层 第二半导体材料，氧化薄膜的自由区域，去除掩模，以便释放以氧化区形式绝缘的图案图案化的薄膜。 第一和第二半导体材料可以是相同的，并且选择性地形成附加层的步骤可以通过薄膜的自由区域的选择性外延生长来进行。

    METHOD FOR FABRICATING MICROELECTRONIC DEVICES WITH ISOLATION TRENCHES PARTIALLY FORMED UNDER ACTIVE REGIONS
    10.
    发明申请
    METHOD FOR FABRICATING MICROELECTRONIC DEVICES WITH ISOLATION TRENCHES PARTIALLY FORMED UNDER ACTIVE REGIONS 有权
    用于在有源区域部分地形成隔离斜面的微电子器件制造方法

    公开(公告)号：US20150294903A1

    公开(公告)日：2015-10-15

    申请号：US14425891

    申请日：2012-09-05

    申请人： Laurent Grenouillet ,  Yannick Le Tiec ,  Nicolas Loubet ,  Maud Vinet ,  Romain Wacquez

    发明人： Laurent Grenouillet ,  Yannick Le Tiec ,  Nicolas Loubet ,  Maud Vinet ,  Romain Wacquez

    IPC分类号： H01L21/762 ,  H01L21/306 ,  H01L21/265 ,  H01L21/84

    CPC分类号： H01L21/76283 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/76224 ,  H01L21/76232 ,  H01L21/84

    摘要： A method of producing a microelectronic device in a substrate comprising a first semiconductor layer, a dielectric layer and a second semiconductor layer, comprising the following steps: etching a trench through the first semiconductor layer, the dielectric layer and a part of the thickness of the second semiconductor layer, thus defining, in the first semiconductor layer, one active region of the microelectronic device, ionic implantation in one or more side walls of the trench, at the level of the second semiconductor layer, modifying the crystallographic properties and/or the chemical properties of the implanted semiconductor, etching of the implanted semiconductor such that at least a part of the trench extends under a part of the active region, —filling of the trench with a dielectric material, forming an isolation trench surrounding the active region and comprising portions extending under a part of the active region.

    摘要翻译： 一种在包括第一半导体层，电介质层和第二半导体层的衬底中制造微电子器件的方法，包括以下步骤：通过所述第一半导体层，所述电介质层和所述第一半导体层的厚度的一部分蚀刻沟槽 从而在所述第一半导体层中限定所述微电子器件的一个有源区域，在所述沟槽的一个或多个侧壁中的离子注入，在所述第二半导体层的水平处，修改所述晶体学性质和/或所述第二半导体层， 注入半导体的化学性质，蚀刻注入的半导体，使得沟槽的至少一部分在有源区的一部分下方延伸，用电介质材料填充沟槽，形成围绕有源区的隔离沟槽，并且包括 在有源区域的一部分下延伸的部分。