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1.发明申请Lithographic apparatus and device manufacturing method using overlay measurement quality indication 有权平版印刷设备和设备制造方法使用覆盖测量质量指示公开(公告)号：US20070229837A1
公开(公告)日：2007-10-04
申请号：US11391690
申请日：2006-03-29
IPC分类号： G01B9/02
CPC分类号： G03F7/70633 , G03F7/70483
摘要： A lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate includes two reference gratings provided in the substrate and two measurement gratings on top of the reference gratings, the measurement gratings being similar to the reference gratings, and oppositely biased in a single direction relative to the respective reference gratings. An overlay measurement device with an image sensor is used for obtaining pixel data of a measurement spot in each of the two measurement gratings. Asymmetry for each pixel in the measurement spot is measured, and from the pixel asymmetry measurements in associated pixels of each of the two measurement gratings an overlay value and a process dependent value is determined, as well as a quality indicator for the overlay value and the process dependent value.
摘要翻译： 布置成将图案从图案形成装置转移到基板上的光刻设备包括设置在基板中的两个参考光栅和在参考光栅顶部的两个测量光栅，测量光栅类似于参考光栅，并且相反地偏置在单个 相对于各个参考光栅的方向。 使用具有图像传感器的覆盖测量装置来获得两个测量光栅中的每一个中的测量点的像素数据。 测量测量点中每个像素的不对称性，并且从两个测量光栅中的每一个的相关像素中的像素不对称测量结果确定覆盖值和过程相关值，以及重叠值的质量指示符和 过程依赖值。
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2.发明申请Lithographic apparatus and device manufacturing method using overlay measurement 有权平版印刷设备和使用重叠测量的设备制造方法公开(公告)号：US20070229785A1
公开(公告)日：2007-10-04
申请号：US11390416
申请日：2006-03-28
IPC分类号： G03B27/68
CPC分类号： G03B27/42 , G03F7/70633
摘要： A lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate includes a reference set of gratings provided in the substrate, the reference set including two reference gratings having line elements in a first direction and one reference grating having line elements in a second, perpendicular, direction. A measurement set of gratings is provided on top of the reference set of gratings, the measurement set comprising three measurement gratings similar to the reference gratings. Two of the measurement gratings are oppositely biased in the second direction relative to the respective reference gratings. An overlay measurement device is provided to measure asymmetry of the three gratings in the reference set and the measurement set, and to derive from the measured asymmetry the overlay in both the first and second direction.
摘要翻译： 布置成将图案从图案形成装置转印到衬底上的光刻设备包括设置在衬底中的参考光栅组，该参考组包括在第一方向上具有线元件的两个参考光栅和在第二方向上具有线元件的一个参考光栅 ，垂直，方向。 光栅的测量组提供在参考光栅组的顶部，测量组包括与参考光栅相似的三个测量光栅。 两个测量光栅相对于各个参考光栅在第二方向上相反地偏置。 提供覆盖测量装置以测量参考组和测量组中的三个光栅的不对称性，并且从第一和第二方向上的测量的不对称性导出覆盖。
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3.发明申请Lithographic apparatus, method of determining a model parameter, device manufacturing method, and device manufactured thereby 失效光刻设备，确定模型参数的方法，器件制造方法以及由此制造的器件公开(公告)号：US20050123843A1
公开(公告)日：2005-06-09
申请号：US10730254
申请日：2003-12-09
申请人： Maurits Schaar , Jeroen Huijbregtse , Sicco Schets , Bart Swinnen
发明人： Maurits Schaar , Jeroen Huijbregtse , Sicco Schets , Bart Swinnen
CPC分类号： G03F9/7092
摘要： A method according to one embodiment of the invention relates to determining at least one parameter of a model that provides information about a position of an object. The object has a plurality of alignment marks of which desired positions are known. The method includes measuring a plurality of positional parameters for each alignment mark. Based on the measured plurality of positional parameters, which are weighted with weighing coefficients, at least one parameter of the model of the object is determined. The numerical value of each weighing coefficient is determined together with the at least one parameter of the model.
摘要翻译： 根据本发明的一个实施例的方法涉及确定提供关于对象的位置的信息的模型的至少一个参数。 物体具有多个已知位置的对准标记。 该方法包括测量每个对准标记的多个位置参数。 基于所测量的多个位置参数，其被称重系数加权，确定对象的模型的至少一个参数。 每个称重系数的数值与模型的至少一个参数一起确定。
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公开(公告)号：US20070222990A1
公开(公告)日：2007-09-27
申请号：US11389494
申请日：2006-03-27
IPC分类号： G01B11/00
CPC分类号： G03F9/7049 , G03F9/7015 , G03F9/7088
摘要： An alignment tool for a lithographic apparatus illuminates an alignment mark on a substrate with an alignment beam and measures the reflected spectrum. The reflected spectrum is compared with a reference mark to determine any misalignment. A blazed sub-wavelength grating is used to deflect the sub-beams created by diffracting the alignment beam from the alignment mark onto the reference mark.
摘要翻译： 用于光刻设备的对准工具用对准光照射衬底上的对准标记并测量反射光谱。 将反射光谱与参考标记进行比较以确定任何未对准。 使用闪耀的亚波长光栅来将通过将对准光束从对准标记衍射衍射到参考标记而产生的子光束偏转。
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公开(公告)号：US20070190762A1
公开(公告)日：2007-08-16
申请号：US11352400
申请日：2006-02-13
IPC分类号： H01L21/22
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/0338 , H01L21/76816
摘要： A method of forming features, e.g. contact holes, at a higher density than is possible with conventional lithographic techniques involves forming an array of sacrificial positive features, conformally depositing a sacrificial layer so that negative features are formed interleaved with the positive features, directionally etching the sacrificial layer and removing the sacrificial features. The result is an array of holes at a higher density than the original sacrificial features. These may then be transferred into the underlying substrate using a desired process.
摘要翻译： 形成特征的方法，例如 以比常规光刻技术更高的密度接触孔包括形成牺牲性特征阵列，从而保形地沉积牺牲层，使得负特征与正特征交错形成，定向蚀刻牺牲层并去除牺牲特征 。 结果是以比原始牺牲特征更高的密度的孔阵列。 然后可以使用所需的方法将这些物质转移到下面的基底中。
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6.发明申请Lithographic apparatus and device manufacturing method with double exposure overlay control 有权平版印刷设备和双重曝光覆盖控制的设备制造方法公开(公告)号：US20070224525A1
公开(公告)日：2007-09-27
申请号：US11384835
申请日：2006-03-21
CPC分类号： G03F7/0035 , G03B27/42 , G03F7/70466 , G03F9/7084
摘要： A device manufacturing method includes a transfer of a pattern from a patterning device onto a substrate. The device manufacturing method further includes transferring a pattern of a main mark to a base layer for forming an alignment mark; depositing a pattern receiving layer on the base layer; in a first lithographic process, aligning, by using the main mark, a first mask that includes a first pattern and a local mark pattern, and transferring the first pattern and the local mark pattern to the pattern receiving layer; aligning, by using the local mark pattern, a second mask including a second pattern relative to the pattern receiving layer; and in a second lithographic process, transferring the second pattern to the pattern receiving layer; the first and second patterns being configured to form an assembled pattern.
摘要翻译： 一种器件制造方法包括将图案从图案形成装置转移到衬底上。 所述器件制造方法还包括将主标记的图案转印到用于形成对准标记的基底层; 在基层上沉积图案接收层; 在第一光刻工艺中，通过使用主标记对准包括第一图案和局部标记图案的第一掩模，并将第一图案和局部标记图案转印到图案接收层; 通过使用本地标记图案，相对于图案接收层对准包括第二图案的第二掩模; 并在第二光刻工艺中将第二图案转印到图案接收层; 第一和第二图案被配置成形成组装图案。
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公开(公告)号：US20070187358A1
公开(公告)日：2007-08-16
申请号：US11435296
申请日：2006-05-17
CPC分类号： H01L21/76816 , H01L21/0337 , H01L21/0338 , H01L21/31144
摘要： A method of forming features, e.g. contact holes, at a higher density than is possible with conventional lithographic techniques involves forming an array of sacrificial positive features, conformally depositing a sacrificial layer so that negative features are formed interleaved with the positive features, directionally etching the sacrificial layer and removing the sacrificial features. The result is an array of holes at a higher density than the original sacrificial features. These may then be transferred into the underlying substrate using a desired process. Also, the method may be repeated to create arrays at even higher densities.
摘要翻译： 形成特征的方法，例如 以比常规光刻技术更高的密度接触孔包括形成牺牲性特征阵列，从而保形地沉积牺牲层，使得负特征与正特征交错形成，定向蚀刻牺牲层并去除牺牲特征 。 结果是以比原始牺牲特征更高的密度的孔阵列。 然后可以使用所需的方法将这些物质转移到下面的基底中。 此外，可以重复该方法以以更高的密度创建阵列。
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公开(公告)号：US20060109463A1
公开(公告)日：2006-05-25
申请号：US10993416
申请日：2004-11-22
申请人： Arie Boef , Jacobus Burghoorn , Mircea Dusa , Antoine Kiers , Maurits Schaar
发明人： Arie Boef , Jacobus Burghoorn , Mircea Dusa , Antoine Kiers , Maurits Schaar
IPC分类号： G01B11/00
CPC分类号： G03F9/708 , G03F7/70633 , G03F7/70675 , G03F7/70991 , G03F9/7084
摘要： An apparatus and method for improved latent overlay metrology is disclosed. In an embodiment, a scatterometer and an overexposed overlay target are used to obtain more robust overlay measurement.
摘要翻译： 公开了一种用于改进潜重叠计量的装置和方法。 在一个实施例中，使用散射仪和曝光过度的覆盖目标来获得更坚固的覆盖测量。
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公开(公告)号：US20060066855A1
公开(公告)日：2006-03-30
申请号：US11203418
申请日：2005-08-15
申请人： Arie Boef , Arno Bleeker , Youri Laurentius Maria Van Dommelen , Mircea Dusa , Antoine Kiers , Paul Luehrmann , Henricus Pellemans , Maurits Schaar , Cedric Grouwstra , Markus Van Kraaij
发明人： Arie Boef , Arno Bleeker , Youri Laurentius Maria Van Dommelen , Mircea Dusa , Antoine Kiers , Paul Luehrmann , Henricus Pellemans , Maurits Schaar , Cedric Grouwstra , Markus Van Kraaij
IPC分类号： G01B11/00
CPC分类号： G01N21/8806 , G03F7/70341 , G03F7/70633 , G03F7/7065 , G03F9/7034
摘要： An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.
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