Reference voltage generator, having a double slope temperature
characteristic, for a voltage regulator of an automotive alternator
    1.
    发明授权
    Reference voltage generator, having a double slope temperature characteristic, for a voltage regulator of an automotive alternator 失效
    具有双斜率温度特性的参考电压发生器,用于汽车交流发电机的电压调节器

    公开(公告)号:US5703476A

    公开(公告)日:1997-12-30

    申请号:US674321

    申请日:1996-07-01

    摘要: A reference voltage generator having a dual slope temperature characteristic, for use in an automotive alternator voltage regulator, comprises a bandgap circuit (R1,R2,R3,R4) which generates a voltage (A) having a thermal drift coefficient of zero and a voltage (B) having a non-zero thermal drift coefficient. These voltages are applied to a voltage divider (R5,R6) and a voltage-follower type of circuit (OPA1). A unidirectional conduction amplifier circuit (OPA2) has an input terminal connected to an intermediate point (C) on the voltage divider. A second voltage divider (R7,R8) is connected between the output terminals of the voltage-follower circuit (D) and the amplifier circuit (E) . An intermediate node (F) of the second voltage divider is coupled to an output terminal (VREF) of the generator.

    摘要翻译: 具有用于汽车交流发电机电压调节器的双斜率温度特性的参考电压发生器包括产生具有热漂移系数为零的电压(A)的带隙电路(R1,R2,R3,R4)和电压 (B)具有非零热漂移系数。 这些电压被施加到分压器(R5,R6)和电压跟随器类型的电路(OPA1)。 单向导通放大器电路(OPA2)具有连接到分压器上的中间点(C)的输入端子。 第二分压器(R7,R8)连接在电压跟随器电路(D)的输出端子和放大器电路(E)之间。 第二分压器的中间节点(F)耦合到发生器的输出端子(VREF)。

    Micro-actuator for hard drive utilizing insulating portions to separate biasing regions from adjacent regions of the micro-actuator and simplified manufacture process therefore
    4.
    发明授权
    Micro-actuator for hard drive utilizing insulating portions to separate biasing regions from adjacent regions of the micro-actuator and simplified manufacture process therefore 有权
    用于硬盘驱动器的微致动器利用绝缘部分从而将偏压区域与微致动器的相邻区域分开并因此简化了制造过程

    公开(公告)号:US07463454B2

    公开(公告)日:2008-12-09

    申请号:US11818659

    申请日:2007-06-14

    IPC分类号: G11B5/56

    CPC分类号: B81B3/0021 H02N1/006

    摘要: A micro-electro-mechanical device formed by a body of semiconductor material having a thickness and defining a mobile part and a fixed part. The mobile part is formed by a mobile platform, supporting arms extending from the mobile platform to the fixed part, and by mobile electrodes fixed to the mobile platform. The fixed part has fixed electrodes facing the mobile electrodes, a first biasing region fixed to the fixed electrodes, a second biasing region fixed to the supporting arms, and an insulation region of insulating material extending through the entire thickness of the body. The insulation region insulates electrically at least one between the first and the second biasing regions from the rest of the fixed part.

    摘要翻译: 由具有厚度并限定可移动部分和固定部分的半导体材料体形成的微电子机械装置。 可移动部分由移动平台,从移动平台延伸到固定部分的支撑臂,以及固定到移动平台的移动电极形成。 固定部分具有面向移动电极的固定电极,固定到固定电极的第一偏置区域,固定到支撑臂的第二偏压区域以及延伸穿过主体整个厚度的绝缘材料的绝缘区域。 绝缘区域在第一和第二偏压区域之间至少一个与固定部件的其余部分绝缘。

    Process for manufacturing a micromachined oscillating element, in particular a mirror for optical switches
    5.
    发明授权
    Process for manufacturing a micromachined oscillating element, in particular a mirror for optical switches 有权
    用于制造微机械振荡元件的方法,特别是用于光学开关的反射镜

    公开(公告)号:US07208339B2

    公开(公告)日:2007-04-24

    申请号:US11063483

    申请日:2005-02-22

    IPC分类号: H01L21/00

    CPC分类号: G02B27/0994

    摘要: A micromachined device made of semiconductor material is formed by: a semiconductor body; an intermediate layer set on top of the semiconductor body; and a substrate, set on top of the intermediate layer. A cavity extends in the intermediate layer and is delimited laterally by bottom fixed regions, at the top by the substrate, and at the bottom by the semiconductor body. The bottom fixed regions form fixed electrodes, which extend in the intermediate layer towards the inside of the cavity. An oscillating element is formed in the substrate above the cavity and is separated from top fixed regions through trenches, which extend throughout the thickness of the substrate. The oscillating element is formed by an oscillating platform set above the cavity, and by mobile electrodes, which extend towards the top fixed regions in a staggered way with respect to the fixed electrodes. The fixed electrodes and mobile electrodes are thus comb-fingered in plan view but formed on different levels.

    摘要翻译: 由半导体材料制成的微机械加工装置由半导体本体形成, 设置在半导体本体顶部的中间层; 以及设置在中间层顶部的基板。 空腔在中间层中延伸并且由底部固定区域在顶部限定,在顶部由衬底限定,并且在底部由半导体本体限定。 底部固定区域形成固定电极,其在中间层中延伸到空腔的内部。 振荡元件形成在空腔上方的衬底中,并且通过沟槽与顶部固定区域分离,其延伸贯穿衬底的厚度。 振荡元件由设置在空腔上方的振荡平台和通过相对于固定电极以交错方式朝着顶部固定区域延伸的移动电极形成。 因此,固定电极和移动电极在平面图中梳理,但形成在不同的水平上。

    Magnetic bi-dimensional position sensor
    6.
    发明授权
    Magnetic bi-dimensional position sensor 失效
    磁性二维位置传感器

    公开(公告)号:US06529140B1

    公开(公告)日:2003-03-04

    申请号:US09085887

    申请日:1998-05-27

    IPC分类号: G08C1906

    CPC分类号: G01V3/081 G01D5/145

    摘要: A bi-dimensional position sensor that can be advantageously used in the turn system controlled from the steering wheel of a vehicle. The sensor includes a permanent magnet fixed to a control lever so as to move in a plane along first and second directions and to rotate about a third direction orthogonal to the preceding ones. The permanent magnet is movable with respect to an integrated device including a first group of sensor elements arranged spaced along the first direction, a second group of sensor elements arranged spaced along the second direction and a third group of sensor elements detecting the angular position of the permanent magnet. Electronics integrated with the sensor elements generate a code associated with each position which the permanent magnet may assume and generate a control signal corresponding to the desired function.

    摘要翻译: 一种二维位置传感器,其可以有利地用于从车辆的方向盘控制的转向系统中。 传感器包括固定到控制杆的永久磁铁,以沿着第一和第二方向在平面内移动并围绕与前述正交的第三方向旋转。 永磁体可相对于包括沿着第一方向间隔布置的第一组传感器元件的集成装置移动,第二组传感器元件沿着第二方向间隔布置,第三组传感器元件检测第二组传感器元件的角位置 永久磁铁 与传感器元件集成的电子产生与永磁体可以采取的每个位置相关联的代码,并产生对应于期望功能的控制信号。

    Hard disk driver with an integrated structure for electrostatically removing dielectric particles generated during the operation, and electrostatic cleaning method for a hard disk driver
    7.
    发明授权
    Hard disk driver with an integrated structure for electrostatically removing dielectric particles generated during the operation, and electrostatic cleaning method for a hard disk driver 有权
    具有用于静电去除在操作期间产生的介电颗粒的集成结构的硬盘驱动器,以及用于硬盘驱动器的静电清洁方法

    公开(公告)号:US06496997B1

    公开(公告)日:2002-12-24

    申请号:US09357441

    申请日:1999-07-20

    IPC分类号: B08B700

    CPC分类号: H02N1/004 G11B21/02

    摘要: An electrostatic cleaning structure of a hard disk driver is formed by a plurality of concentric conductive regions to which biasing pulse trains are supplied. Each biased conductive region generates an electric field attracting any dielectric particle. The pulse trains supplied to immediately adjacent conductive regions are phase-shifted by a predetermined time and in a direction linked to a desired direction of removal for the electrostatic particles. Voltage pulses sent to each conductive region are delayed with respect to voltage pulses sent to an immediately preceding conductive region in the direction of desired removal, and are advanced with respect the voltage pulses sent to an immediately successive conductive region.

    摘要翻译: 硬盘驱动器的静电清洁结构由供给偏压脉冲串的多个同心导电区域形成。 每个偏置的导电区域产生吸引任何电介质颗粒的电场。 提供给紧邻的导电区域的脉冲串相对于静电颗粒的期望的去除方向相互偏移预定的时间。 发送到每个导电区域的电压脉冲相对于在所需去除方向上发送到紧邻在前的导电区域的电压脉冲而被延迟,并且相对于发送到紧邻的导电区域的电压脉冲前进。

    Microelectromechanical structure comprising distinct parts mechanically connected through a translation/rotation conversion assembly
    8.
    发明授权
    Microelectromechanical structure comprising distinct parts mechanically connected through a translation/rotation conversion assembly 有权
    微机电结构包括通过平移/旋转转换组件机械连接的不同部分

    公开(公告)号:US06487000B2

    公开(公告)日:2002-11-26

    申请号:US09925847

    申请日:2001-08-08

    IPC分类号: G02B2600

    摘要: A microelectromechanical structure, usable in an optical switch for directing a light beam towards one of two light guide elements, including: a mirror element, rotatably movable; an actuator, which can translate; and a motion conversion assembly, arranged between the mirror element and the actuator. The motion conversion assembly includes a projection integral with the mirror element and elastic engagement elements integral with the actuator and elastically loaded towards the projection. The elastic engagement elements are formed by metal plates fixed to the actuator at one of their ends and engaging the projection with an abutting edge countershaped with respect to the projection.

    摘要翻译: 一种微机电结构,可用于将光束引向两个光导元件中的一个的光学开关中,包括:反射镜元件,可旋转地移动; 可以翻译的执行器; 以及布置在镜元件和致动器之间的运动转换组件。 运动转换组件包括与镜子元件一体的突起和与致动器成一体的弹性接合元件,并朝向突起弹性加载。 弹性接合元件由金属板形成,金属板在它们的一端固定到致动器,并且与突起接合,并且相对于突起相对地配置有邻接边缘。

    Bridge circuit having polarity inversion protection means entailing a
reduced voltage drop
    10.
    再颁专利
    Bridge circuit having polarity inversion protection means entailing a reduced voltage drop 失效
    具有极性反转保护装置的桥式电路意味着降低的电压降

    公开(公告)号:USRE36472E

    公开(公告)日:1999-12-28

    申请号:US405435

    申请日:1995-03-16

    CPC分类号: H02H11/002 H02P7/04 H02H9/047

    摘要: The additional voltage drop across a guard diode against supply polarity inversion in an integrated bridge circuit for driving an external load and employing two high-side NPN power switches driven by two PNP transistors, all monolithically integrated using a junction-type isolation technique, is substantially eliminated by connecting the emitters of the two PNP drive transistors directly to the positive rail, i.e. to the anode of the guard diode. Integrated PNP transistors are per se intrinsically protected against polarity inversion and when so connected permit to reduce the overall voltage drop across the driving bridge circuit. Using a Zener diode as the guard diode and a second Zener diode connected in opposition to the first Zener between the cathode thereof and the negative supply rail an additional spike protection of the circuit's components is implemented.

    摘要翻译: 在用于驱动外部负载的集成电路电路中的保护二极管附近的额外电压降与采用由两个PNP晶体管驱动的两个高侧NPN功率开关的所有单极集成的结合型隔离技术基本相同 通过将两个PNP驱动晶体管的发射极直接连接到正轨,即保护二极管的阳极来消除。 集成的PNP晶体管本质上保护不受极性反转,当连接时允许减小驱动桥电路两端的整体电压降。 使用齐纳二极管作为保护二极管,以及在其阴极和负电源导轨之间与第一齐纳二极管相对的第二齐纳二极管,实现电路部件的附加尖峰保护。