Electrostatic discharge protection device
    1.
    发明授权
    Electrostatic discharge protection device 有权
    静电放电保护装置

    公开(公告)号:US08723263B2

    公开(公告)日:2014-05-13

    申请号:US13556219

    申请日:2012-07-24

    IPC分类号: H01L23/62

    摘要: An electrostatic discharge (ESD) includes a semiconductor substrate having the first conductive type, a well having the first conductive type, a buried layer having the second conductive type and a well having the second conductive type. The buried layer having a second conductive type is disposed in the semiconductor substrate under the well having the first conductive type. The well having the second conductive type disposed to divide the well having the first conductive type into a first well and a second well. The well having the second conductive type contacts the buried layer, and the well having the second conductive type and the buried layer are jointly used to isolate the first well from the second well.

    摘要翻译: 静电放电(ESD)包括具有第一导电类型的半导体衬底,具有第一导电类型的阱,具有第二导电类型的掩埋层和具有第二导电类型的阱。 具有第二导电类型的掩埋层在具有第一导电类型的阱下面设置在半导体衬底中。 具有第二导电类型的阱被设置成将具有第一导电类型的阱分成第一阱和第二阱。 具有第二导电类型的阱接触掩埋层,并且具有第二导电类型和掩埋层的阱共同用于将第一阱与第二阱隔离。

    ELECTROSTATIC DISCHARGE PROTECTION DEVICE
    2.
    发明申请
    ELECTROSTATIC DISCHARGE PROTECTION DEVICE 有权
    静电放电保护装置

    公开(公告)号:US20140027856A1

    公开(公告)日:2014-01-30

    申请号:US13556219

    申请日:2012-07-24

    IPC分类号: H01L27/06

    摘要: An electrostatic discharge (ESD) includes a semiconductor substrate having the first conductive type, a well having the first conductive type, a buried layer having the second conductive type and a well having the second conductive type. The buried layer having a second conductive type is disposed in the semiconductor substrate under the well having the first conductive type. The well having the second conductive type disposed to divide the well having the first conductive type into a first well and a second well. The well having the second conductive type contacts the buried layer, and the well having the second conductive type and the buried layer are jointly used to isolate the first well from the second well.

    摘要翻译: 静电放电(ESD)包括具有第一导电类型的半导体衬底,具有第一导电类型的阱,具有第二导电类型的掩埋层和具有第二导电类型的阱。 具有第二导电类型的掩埋层在具有第一导电类型的阱下面设置在半导体衬底中。 具有第二导电类型的阱被设置成将具有第一导电类型的阱分成第一阱和第二阱。 具有第二导电类型的阱接触掩埋层,并且具有第二导电类型和掩埋层的阱共同用于将第一阱与第二阱隔离。

    Handset device
    3.
    发明授权
    Handset device 有权
    手机设备

    公开(公告)号:US08040284B2

    公开(公告)日:2011-10-18

    申请号:US12371633

    申请日:2009-02-16

    IPC分类号: H01Q1/24 H01Q1/48

    摘要: A handset device including a ground plane, an antenna, a first conductive strip and a second conductive strip is provided. The antenna is electrically connected to the ground plane and forms a current loop with the ground plane. The ground plane forms a current area according to the current loop. The first conductive strip is electrically connected to the current area and changes a current distribution on the ground plane to increase a current density passing through the current area.

    摘要翻译: 提供了包括接地平面,天线,第一导电条和第二导电条的手机装置。 天线电连接到接地平面,并与地平面形成电流回路。 接地平面根据电流回路形成一个当前区域。 第一导电带电连接到电流区域并改变接地平面上的电流分布,以增加通过电流区域的电流密度。

    LIGHT EMITTING DIODE PACKAGE, LIGHTING DEVICE AND LIGHT EMITTING DIODE PACKAGE SUBSTRATE
    4.
    发明申请
    LIGHT EMITTING DIODE PACKAGE, LIGHTING DEVICE AND LIGHT EMITTING DIODE PACKAGE SUBSTRATE 有权
    发光二极管封装,照明装置和发光二极管封装基板

    公开(公告)号:US20110248289A1

    公开(公告)日:2011-10-13

    申请号:US13078933

    申请日:2011-04-02

    IPC分类号: H01L33/08 H01L33/62

    摘要: A light emitting diode (LED) package includes a LED package substrate, first LED chips and second LED chips. The LED package substrate includes a substrate, a first bonding pad, second bonding pads and a third bonding pad. The first, second and third bonding pads are disposed on the substrate. The second bonding pads are arranged in an array. The first and third bonding pads are located adjacent respectively to first and last column of the array. The first LED chips are die-bonded on the first bonding pad and wire-bonded respectively to the second bonding pads arranged in first column of the array. The second LED chips are die-bonded on the second bonding pads respectively. In each row except last column, each second LED chip is wire-bonded to the second bonding pad arranged in next column. The second LED chips located in last column are wire-bonded to the third bonding pad.

    摘要翻译: 发光二极管(LED)封装包括LED封装基板,第一LED芯片和第二LED芯片。 LED封装衬底包括衬底,第一焊盘,第二接合焊盘和第三接合焊盘。 第一,第二和第三接合焊盘设置在基板上。 第二接合焊盘被布置成阵列。 第一和第三接合焊盘分别位于阵列的第一列和最后一列。 第一LED芯片在第一焊盘上被芯片焊接并分别引线接合到布置在阵列的第一列中的第二焊盘。 第二LED芯片分别在第二焊盘上进行裸片焊接。 在除了最后一列之外的每行中,每个第二LED芯片被引线键合到布置在下一列中的第二焊盘。 位于最后一列的第二LED芯片被引线接合到第三焊盘。

    LED street lamp
    5.
    发明申请
    LED street lamp 审中-公开
    LED路灯

    公开(公告)号:US20100172131A1

    公开(公告)日:2010-07-08

    申请号:US12318616

    申请日:2009-01-02

    IPC分类号: F21V29/00

    摘要: A light-emitting diode (LED) street lamp is applicable for street lighting. The LED street lamp includes a casing, an LED module, and a heat dissipation module. The LED module and the heat dissipation module are arranged inside the casing. The LED module includes a frame, a circuit board carrying a plurality of LEDs, and a light regulation mechanism. The frame and the circuit board are set opposing each other with the light regulation mechanism arranged therebetween to interfere with emission light from the LEDs. The emission light, after being interfered with, is projected outside the casing to realize lighting. The heat dissipation module is in physical engagement with the LED module to remove heat generated by the LEDs. As such, the LED street lamp is provided with a broader range of illumination angle and more uniform brightness, so that the same LED street lamp is applicable to various sites and the heat generated by the LEDs can be efficiently dissipated.

    摘要翻译: 发光二极管(LED)路灯适用于街道照明。 LED路灯包括壳体,LED模块和散热模块。 LED模块和散热模块布置在外壳内。 LED模块包括框架,承载多个LED的电路板和光调节机构。 框架和电路板彼此相对设置,其间布置有光调节机构以干扰来自LED的发射光。 发射光被干扰后,突出到外壳外面实现照明。 散热模块与LED模块物理接合,以消除LED产生的热量。 因此,LED路灯具有更宽的照明角度和更均匀的亮度,使得相同的LED路灯可应用于各种场所,并且可以有效地消散由LED产生的热量。

    Etching method for metal layer of display panel
    6.
    发明授权
    Etching method for metal layer of display panel 有权
    显示面板金属层蚀刻方法

    公开(公告)号:US07396708B2

    公开(公告)日:2008-07-08

    申请号:US11690137

    申请日:2007-03-23

    IPC分类号: H01L21/00 H01L21/84

    摘要: An etching process of a metal layer of a display panel is provided. First, a substrate with at least one display panel region, a testing device region, and a non-device region is provided. Then, a metal layer is formed over the substrate to cover the display panel region, the testing device region, and the non-device region. Next, a mask is formed on the metal layer to expose a portion of the metal layer. The area of the metal layer exposed by the mask substantially occupies 70%˜88% of the total area of the metal layer. Thereafter, a wet etching process is performed to remove the metal layer exposed by the mask.

    摘要翻译: 提供了显示面板的金属层的蚀刻工艺。 首先,提供具有至少一个显示面板区域的基板,测试装置区域和非装置区域。 然后,在基板上形成金属层以覆盖显示面板区域,测试装置区域和非装置区域。 接下来,在金属层上形成掩模以暴露金属层的一部分。 由掩模露出的金属层的面积基本上占金属层总面积的70%〜88%。 此后,进行湿蚀刻处理以去除由掩模暴露的金属层。

    Nanoscale helical microstructures and channels from chiral poly(L-lactide) block containing block copolymers
    8.
    发明授权
    Nanoscale helical microstructures and channels from chiral poly(L-lactide) block containing block copolymers 失效
    来自手性聚(L-丙交酯)嵌段的嵌段共聚物的纳米级螺旋微结构和通道

    公开(公告)号:US07135523B2

    公开(公告)日:2006-11-14

    申请号:US10799845

    申请日:2004-03-12

    IPC分类号: C08G63/08

    摘要: A method for making a series of nanoscale microstructures, including helical microstructures and cylindrical microstrustures. This method includes the steps of: (1) forming a chiral block copolymer containing a plurality of chiral first polymer blocks and a second polymer blocks wherein the chiral first polymer blocks have a volume fraction ranging from 20 to 49%; (2) causing a phase separation in the chiral block copolymer. In a preferred embodiment, the chiral block copolymer is poly(styrene)-poly(L-lactide) (PS-PLLA) chiral block copolymer, and the copolymerization process is a living copolymerization process which includes the following steps: (a) mixing styrene with BPO and 4-OH-TEMPO to form 4-hydroxy-TEMPO-terminated polystyrene; and (2) mixing the 4-hydroxy-TEMPO-terminated polystyrene with [η3-EDBP)Li2]2[(η3-nBu)Li(0.5Et2O)]2 and L-lactide in an organic solvent preferably CH2Cl2 to form the poly(styrene)-poly(L-lactide) chiral block copolymer. Transmission electron microscopy (TEM) and small X-ray scattering (SAXS) studies show that when the volume fraction of poly(L-lactide) is about 35–37%, nanoscale helices with a pitch of 43.8 nanometers and a diameter of 34.4 nanometers were observed.

    摘要翻译: 一种制备一系列纳米级微观结构的方法,包括螺旋微结构和圆柱形微结构。 该方法包括以下步骤:(1)形成含有多个手性第一聚合物嵌段的手性嵌段共聚物和第二聚合物嵌段,其中手性第一聚合物嵌段具有20至49%的体积分数; (2)引起手性嵌段共聚物中的相分离。 在优选的实施方案中,手性嵌段共聚物是聚(苯乙烯) - 聚(L-丙交酯)(PS-PLLA)手性嵌段共聚物,共聚方法是一种活性共聚方法,其包括以下步骤:(a) 用BPO和4-OH-TEMPO形成4-羟基-TEMPO封端的聚苯乙烯; 和(2)将4-羟基-TEMPO封端的聚苯乙烯与[η3 -EDBP] Li 2 N 2 [2] 优选的有机溶剂中的L 3→N 2→Bu)Li(0.5E 2 O 2)2 N 2和L-丙交酯 CH 2 2 Cl 2以形成聚(苯乙烯) - 聚(L-丙交酯)手性嵌段共聚物。 透射电子显微镜(TEM)和小X射线散射(SAXS)研究表明,当聚(L-丙交酯)的体积分数为约35-37%时,具有43.8纳米的间距和34.4纳米的直径的纳米级螺旋 被观察到。

    Method for processing Chinese natural language sentence
    9.
    发明申请
    Method for processing Chinese natural language sentence 审中-公开
    中文自然语言处理方法

    公开(公告)号:US20050273314A1

    公开(公告)日:2005-12-08

    申请号:US10861484

    申请日:2004-06-07

    IPC分类号: G06F17/27 G06F17/28

    摘要: A method for processing natural language Chinese sentences can transform a Chinese sentence into a Triple representation using shallow parsing techniques. The method is concerned with parsing Chinese sentences by employing lexical and syntactical information to extract more prominent entities in a Chinese sentence, and the sentence is then transformed into a Triple representation by employing the Triple rules referring to elemental Chinese syntax—SVO (subject, verb, and object in order). The lexical and syntactical information in our method is referring a lexicon possessed of part-of-speech (POS) information and phrase-level syntax in Chinese respectively. The Triple representation consists of three elements which are agent, predicate, and patient in a sentence.

    摘要翻译: 一种处理自然语言的方法中文句子可以使用浅析解技术将中文句子转换成三重表示法。 该方法涉及通过使用词法和语法信息来解析中文句子,以提取中文句子中更突出的实体,然后通过使用基于汉语语法SVO(主语,动词)的三重规则将该句子转换为三重表示 ,和对象)。 我们的方法中的词汇和语法信息是指具有中文语音(POS)信息和短语级语法的词典。 三重表示由句子中的代理,谓词和患者三个元素组成。

    Catalyst composition containing bidentate coordinated trivalent group
IVB metal complex for preparing syndiotactic vinyl aromatic polymer
    10.
    发明授权
    Catalyst composition containing bidentate coordinated trivalent group IVB metal complex for preparing syndiotactic vinyl aromatic polymer 有权
    含双配位配位的三价ⅣB族金属络合物的催化剂组合物用于制备间同立构乙烯基芳族聚合物

    公开(公告)号:US6051668A

    公开(公告)日:2000-04-18

    申请号:US181708

    申请日:1998-10-28

    摘要: A novel trivalent Group IVB metal complex for preparing syndiotactic vinyl aromatic polymers is disclosed which is coordinated by a bidentate ligand and is represented by the formula (I):(C.sub.5 R.sub.n H.sub.5-n)M(BD).sub.m Y.sub.p (I)wherein C.sub.5 R.sub.n H.sub.5-n is a substituted or unsubstituted cyclopentadienyl group, n is an integer between 0 and 5, and R is C.sub.1 to C.sub.12 alkyl, aryl, substituted alkyl, or substituted aryl; M is a trivalent Group IVB metal; (BID) is a bidentate ligand with -1 valence, having a coordinating group which is capable of forming a coordinating bond or a chelating bond with the metal M; Y is selected from the group consisting of alkyl, aryl, aralkyl, halogen and hydrogen; m is an integer of 1 or 2; and m+p=2.

    摘要翻译: 公开了一种用于制备间同立构乙烯基芳族聚合物的新型三价IVB族金属络合物,其由二齿配体配位并由式(I)表示:(C5RnH5-n)M(BD)mYp(I)其中C5RnH5-n为 取代或未取代的环戊二烯基,n为0至5的整数,R为C 1至C 12烷基,芳基,取代的烷基或取代的芳基; M是三价IVB族金属; (BID)是具有-1价的双齿配体,具有能够与金属M形成配位键或螯合键的配位基; Y选自烷基,芳基,芳烷基,卤素和氢; m为1或2的整数; m + p = 2。