公开(公告)号：US5491105A

公开(公告)日：1996-02-13

申请号：US303792

申请日：1994-09-09

申请人： Michael C. Smayling ,  Manuel L. Torreno, Jr., deceased ,  Georges Falessi

发明人： Michael C. Smayling ,  Manuel L. Torreno, Jr., deceased ,  Georges Falessi

IPC分类号： H01L21/324 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8247 ,  H01L27/06 ,  H01L27/088 ,  H01L27/115 ,  H01L29/06 ,  H01L29/08 ,  H01L29/735 ,  H01L29/78 ,  H01L21/822

CPC分类号： H01L29/7816 ,  H01L21/823456 ,  H01L29/66689 ,  H01L29/66712 ,  H01L29/735 ,  H01L29/7801 ,  H01L29/7809 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/42368 ,  Y10S148/151

摘要： An embodiment of the present invention is a method of fabricating power and non-power devices on a semiconductor substrate, the method comprising: forming alignment marks in the substrate (100); introducing a dopant of a first conductivity type into the substrate to form high-voltage tank regions (103); annealing the dopants (105); introducing dopants of the first conductivity type and a second conductivity type in a region in the high-voltage tank region (109); annealing the dopants of the first and the second conductivity type to form a second region within a third region, both within the high-voltage tank region, due to the different rates of diffusion of the dopants (110); and forming gate structures after the annealing of the dopants of the first and second conductivity types (122).

摘要翻译： 本发明的实施例是一种在半导体衬底上制造功率和非功率器件的方法，所述方法包括：在衬底（100）中形成对准标记; 将第一导电类型的掺杂剂引入所述​​衬底中以形成高压罐区域（103）; 退火掺杂剂（105）; 在高压罐区域（109）的区域中引入第一导电类型和第二导电类型的掺杂剂; 由于掺杂剂（110）的扩散速率不同，在第一区域和第二导电类型的掺杂剂中退火，以在第三区域内形成第二区域。 以及在第一和第二导电类型（122）的掺杂剂退火之后形成栅极结构。

公开(公告)号：US5245543A

公开(公告)日：1993-09-14

申请号：US632256

申请日：1990-12-21

申请人： Michael C. Smayling ,  Georges Falessi

发明人： Michael C. Smayling ,  Georges Falessi

IPC分类号： G06F17/50

CPC分类号： G06F17/5063

摘要： An integrated circuit is designed by determined the devices comprising the integrated circuit and determining the desired parameters for each device. A flow of process steps is determined and the 1-D and 2-D simulations are performed on the process flow. The process steps are modified until the simulations determine that the desired parameters are met.

摘要翻译： 通过确定包括集成电路的装置并确定每个装置的期望参数来设计集成电路。 确定流程步骤，并对流程进行1-D和2-D模拟。 修改处理步骤直到模拟确定满足所需的参数。

公开(公告)号：US5515319A

公开(公告)日：1996-05-07

申请号：US135935

申请日：1993-10-12

申请人： Michael C. Smayling ,  Iano D'Arrigo ,  Giovanni Santin ,  Georges Falessi ,  Mousumi Bhat

发明人： Michael C. Smayling ,  Iano D'Arrigo ,  Giovanni Santin ,  Georges Falessi ,  Mousumi Bhat

IPC分类号： G11C16/10 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/115 ,  H01L29/788 ,  G11C7/00

CPC分类号： H01L27/11526 ,  G11C16/10 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11546 ,  H01L29/7885

摘要： A non-volatile memory cell 10 is disclosed herein. The cell is formed in a first semiconductor region 12 of a first conductivity type. A second semiconductor region 14 of a second conductivity type formed over the first semiconductor region 12. A third semiconductor region 16 of the first conductivity type formed over the second semiconductor region 14. In the preferred embodiment, the second and third regions 14 and 16 are well regions formed within the first region 12. Other regions such as epitaxially grown layers can also be used. First and second source/drain regions 18 and 20 are formed within the third semiconductor region 16. These second source/drain regions 18 and 20 are separated by a channel region 22. A floating gate 26 overlies at least a portion of the channel region 22 while a control gate 30 overlies the floating gate 26.

摘要翻译： 本文公开了非易失性存储单元10。 电池形成在第一导电类型的第一半导体区域12中。 形成在第一半导体区域12上的第二导电类型的第二半导体区域14.在第二半导体区域14上形成的第一导电类型的第三半导体区域16.在优选实施例中，第二和第三区域14和16是 形成在第一区域12内的阱区。也可以使用其它区域，例如外延生长层。 第一和第二源极/漏极区域18和20形成在第三半导体区域16内。这些第二源极/漏极区域18和20被沟道区域22分开。浮置栅极26覆盖沟道区域22的至少一部分 而控制门30覆盖浮动门26。

公开(公告)号：US5432740A

公开(公告)日：1995-07-11

申请号：US135813

申请日：1993-10-12

申请人： Iano D'Arrigo ,  Georges Falessi ,  Michael C. Smayling

发明人： Iano D'Arrigo ,  Georges Falessi ,  Michael C. Smayling

IPC分类号： G11C16/04 ,  H01L27/115 ,  G11C7/00

CPC分类号： G11C16/0433 ,  H01L27/115

摘要： A EEPROM memory array (10) includes a plurality of memory cells (24) which are connected in a symmetric array between row lines (26) and Column Lines (28) and Virtual Ground Lines (29). Each of the memory cells includes a merged pass gate which is connected to a control gate. A non-stacked structure is utilized wherein a floating gate (42) is formed, having two portions that extend over an active region, a tunnel diode portion (44) and a control gate portion (46). The floating gate portion (44) is disposed over a thin tunnel oxide layer (47) to form a tunnel diode which allows Fowler-Nordheim tunneling to occur. The control gate portion (46) is disposed over a much thicker oxide layer such that tunneling does not occur. A control gate layer (50) is disposed over the floating gate (42) such that it overlaps the edges thereof and encloses the floating gate (42). On the one side of the floating gate (42), the control gate extends over the gate oxide layer in an extended portion (52) to form a pass gate structure. The pass gate structure is a merged structure formed in series with the floating gate cell. The merged pass gate has a controllable threshold that allows the floating gate cell to be overerased without causing unwanted conduction when the cell is unselected.

摘要翻译： EEPROM存储器阵列（10）包括在行线（26）和列线（28）和虚拟接地线（29）之间以对称阵列连接的多个存储器单元（24）。 每个存储单元包括连接到控制门的合并通道。 使用非堆叠结构，其中形成浮动栅极（42），其具有在有源区域上延伸的两个部分，隧道二极管部分（44）和控制栅极部分（46）。 浮动栅极部分（44）设置在薄的隧道氧化物层（47）上，以形成允许发生Fowler-Nordheim隧道的隧道二极管。 控制栅极部分（46）设置在更厚的氧化物层上，使得隧道不发生。 控制栅极层（50）设置在浮动栅极（42）上，使得它与其边缘重叠并且包围浮动栅极（42）。 在浮动栅极（42）的一侧上，控制栅极延伸在延伸部分（52）上的栅极氧化物层上，以形成栅极结构。 通栅结构是与浮栅单元串联形成的合并结构。 合并的通过门具有可控的阈值，允许浮动单元在未选择单元时不会导致不必要的导通而过渡。

公开(公告)号：US5557569A

公开(公告)日：1996-09-17

申请号：US453474

申请日：1995-05-25

申请人： Michael C. Smayling ,  Giulio G. Marotta ,  Iano D'Arrigo ,  Giovanni Santin ,  Georges Falessi ,  Mousumi Bhat

发明人： Michael C. Smayling ,  Giulio G. Marotta ,  Iano D'Arrigo ,  Giovanni Santin ,  Georges Falessi ,  Mousumi Bhat

IPC分类号： G11C16/04 ,  G11C16/08 ,  H01L27/115

CPC分类号： G11C16/0416 ,  G11C16/0433 ,  G11C16/08 ,  H01L27/115

摘要： A low voltage flash EEPROM X-Cell includes an array of memory cell transistors (24) that constitute asymmetric floating gate memory cells wherein programming is achieved on only one side of the memory cells (24). The programming side of each of the memory cells (24) is connected to one of a plurality of Column Lines (28) at nodes (30). Each node (30) shares the programming side of two of the memory cells (24) and the non-programming side of two of the memory cells (24). The control gates of each of the memory cells (24) are connected to Word Lines (26) associated with rows of the array. To Flash Write all of the memory cells (24), the Column Lines (38) are connected to a negative medium voltage and the row lines (26) are connected to a positive medium voltage. To selectively erase one of the memory cells (24), the Column Line (28) associated with the programming side of the select memory cell transistor is connected to a positive medium voltage and the associated line (26) is connected to a positive Read voltage. The remaining Word Lines are connected to a negative Read voltage and the remaining Column Lines (28) are connected to a zero volt level.

摘要翻译： 低电压快闪EEPROM X-Cell包括构成非对称浮动栅极存储单元的存储单元晶体管阵列（24），其中仅在存储单元（24）的一侧实现编程。 每个存储器单元（24）的编程侧在节点（30）处连接到多个列线（28）中的一个。 每个节点（30）共享两个存储器单元（24）的两个存储器单元（24）的非编程侧的编程侧。 每个存储器单元（24）的控制栅极连接到与阵列的行相关联的字线（26）。 闪存写入所有存储单元（24），列线（38）连接到负中等电压，行线（26）连接到正中压。 为了选择性地擦除存储器单元（24）中的一个，与选择存储单元晶体管的编程侧相关联的列线（28）连接到正的中间电压，并且相关的线路（26）连接到正的读取电压 。 剩下的字线连接到负的读取电压，剩余的列线（28）连接到零伏电平。

公开(公告)号：US5504706A

公开(公告)日：1996-04-02

申请号：US135696

申请日：1993-10-12

申请人： Iano D'Arrigo ,  Georges Falessi ,  Michael C. Smayling

发明人： Iano D'Arrigo ,  Georges Falessi ,  Michael C. Smayling

IPC分类号： G11C16/04 ,  H01L27/115 ,  H01L29/788 ,  G11C11/34 ,  H01L29/68

CPC分类号： H01L27/115 ,  G11C16/0416 ,  H01L29/7883 ,  G11C2216/10 ,  G11C2216/16 ,  G11C2216/18

摘要： A memory array (10) is provided with a plurality of Flash EEPROM memory cells (24) that are fabricated with a single level poly process. Each of the transistor cells (24) is fabricated from a single poly layer floating gate (40) that extends between a moat region (30) and an implanted region (80), comprising the control gate of the cell (24). The portion of the floating gate (40) overlying the moat forms a channel region and is separated therefrom by a thin tunnel oxide layer (82) to allow the cell to operate in accordance with Fowler-Nordheim tunneling. The portion of the floating gate (40) disposed over the implanted control gate (80) is separated therefrom by a layer of oxide (84). The implant region (80) is contacted by a contact layer (86) to allow voltage to be applied thereto. The transistor is contained within a P-tank (78) which is disposed at a negative voltage, this tank (78) contained within an N-tank (76), which tank ( 76) is disposed at a higher voltage. This assures that no conduction occurs from the region (80) to the tank (78) when negative voltages are applied to the control gate. Negative medium voltages and positive medium voltages are utilized to allow the array to be bit programmed without using separate row select transistors.

摘要翻译： 存储器阵列（10）设置有多个闪存EEPROM存储器单元（24），其被制造为单级多工艺。 每个晶体管单元（24）由包括电池（24）的控制栅极的沟槽区域（30）和注入区域（80）之间延伸的单个多晶硅浮动栅极（40）制成。 覆盖在护城河上的浮动栅极（40）的部分形成沟道区域，并且通过薄的隧道氧化物层（82）与其隔开，以允许电池根据福勒 - 诺德海姆隧道进行操作。 设置在植入的控制栅极（80）上方的浮置栅极（40）的部分与氧化层（84）分离。 植入区域（80）由接触层（86）接触以允许施加电压。 晶体管被包含在设置在负电压的P型罐（78）内，该罐（78）包含在N-罐（76）内，该罐（76）被设置在较高的电压。 这确保当负电压施加到控制栅极时，从区域（80）到罐（78）不会发生导通。 利用负的中等电压和正的中等电压来使阵列被编程，而不使用单独的行选择晶体管。

公开(公告)号：US5467307A

公开(公告)日：1995-11-14

申请号：US135694

申请日：1993-10-12

申请人： Iano D'Arrigo ,  Georges Falessi ,  Michael C. Smayling

发明人： Iano D'Arrigo ,  Georges Falessi ,  Michael C. Smayling

IPC分类号： G11C8/08 ,  G11C16/04 ,  H01L27/115 ,  G11C11/34

CPC分类号： G11C16/0416 ,  G11C8/08 ,  H01L27/115

摘要： A Flash EEPROM memory array includes a plurality of transistor memory cells (24) arranged in rows and columns. The sources of the transistors (24) are connected to Virtual Ground Lines (29) and the drains thereof are connected to Column Lines (28). The memory cells (24) are programmable by Fowler-Nordheim tunneling. Each cell also includes an isolation structure having a first isolation tank of the first conductivity type material for surrounding each of the floating gate transistor memory devices and a second isolation tank of a second conductivity type material opposite to the first conductivity type surrounding the first isolation tank, allowing application of a negative voltage to the source or drain of the cell. Initially, all of the transistors are erased in the FLASH ERASE operation by disposing the Word Lines at a negative medium voltage and the Bit Lines at a positive medium voltage. Thereafter, selected transistors can be written to by selectively charging the floating gates in the transistors. This is achieved by disposing the Column Lines (28) of a select transistor at a negative voltage of a magnitude less than the programming voltage V.sub. PP and disposing the row line (26) of the select transistor at a positive voltage of a magnitude less than V.sub.PP.

摘要翻译： 闪存EEPROM存储器阵列包括以行和列布置的多个晶体管存储单元（24）。 晶体管（24）的源极连接到虚拟接地线（29），其漏极连接到列线（28）。 存储器单元（24）可由Fowler-Nordheim隧道编程。 每个单元还包括隔离结构，该隔离结构具有第一导电类型材料的第一隔离槽，用于围绕每个浮栅晶体管存储器件;以及第二隔离槽，其与围绕第一隔离槽的第一导电类型相反的第二导电类型材料 允许向电池的源极或漏极施加负电压。 最初，在闪存擦除操作中，所有晶体管都通过将字线置于负中压而位线位于正中压。 此后，可以通过选择性地对晶体管中的浮置栅极充电来写入所选择的晶体管。 这通过将选择晶体管的列线（28）设置在小于编程电压V PP的量级的负电压并将选择晶体管的行线（26）设置在小于 VPP。

公开(公告)号：US5319564A

公开(公告)日：1994-06-07

申请号：US41743

申请日：1993-04-01

申请人： Michael C. Smayling ,  Georges Falessi

发明人： Michael C. Smayling ,  Georges Falessi

IPC分类号： G06F17/50 ,  G06F15/46

CPC分类号： G06F17/5063

摘要： An integrated circuit is designed by determined the devices comprising the integrated circuit and determining the desired parameters for each device. A flow of process steps is determined and the 1-D and 2-D simulations are performed on the process flow. The process steps are modified until the simulations determine that the desired parameters are met.

摘要翻译： 通过确定包括集成电路的装置并确定每个装置的期望参数来设计集成电路。 确定流程步骤，并对流程进行1-D和2-D模拟。 修改处理步骤直到模拟确定满足所需的参数。

公开(公告)号：US5296393A

公开(公告)日：1994-03-22

申请号：US924388

申请日：1992-08-03

申请人： Michael C. Smayling ,  Louis Hutter ,  Georges Falessi ,  James R. Todd ,  Manuel Torreno

发明人： Michael C. Smayling ,  Louis Hutter ,  Georges Falessi ,  James R. Todd ,  Manuel Torreno

IPC分类号： H01L21/8238 ,  H01L21/8247 ,  H01L27/092 ,  H01L27/105 ,  H01L21/265

CPC分类号： H01L27/11526 ,  H01L21/8238 ,  H01L27/0922 ,  H01L27/105 ,  H01L27/11546

摘要： An integrated process is shown for the fabrication of one or more of the following devices: (n-) and (p-) channel low-voltage field-effect logic transistors (139/140); (n-) and (p-) channel high-voltage insulated-gate field-effect transistors (141, 142) for the gating of an EEPROM memory array or the like; a Fowler-Nordheim tunneling EEPROM cell (143); (n-) and (p-) channel drain-extended insulated-gate field-effect transistors (144, 145); vertical and lateral annular DMOS transistors (146, 147); a Schottky diode (148); and a FAMOS EPROM cell (149). A "non-stack" double-level poly EEPROM cell (676) with enhanced reliability (676) is also disclosed.

摘要翻译： 示出了用于制造以下器件中的一个或多个的集成过程：（n-）和（p-）沟道低电压场效应逻辑晶体管（139/140）; （n-）和（p-）通道高压绝缘栅场效应晶体管（141,142），用于选择EEPROM存储器阵列等; Fowler-Nordheim隧道式EEPROM单元（143）; （n-）和（p-）沟道漏极扩展绝缘栅场效应晶体管（144,145）; 垂直和横向环形DMOS晶体管（146,147）; 肖特基二极管（148）; 和FAMOS EPROM单元（149）。 还公开了具有增强的可靠性（676）的“非堆叠”双层多层EEPROM单元（676）。