SYSTEM AND METHOD FOR MEASURING AND ANALYZING LITHOGRAPHIC PARAMETERS AND DETERMINING OPTIMAL PROCESS CORRECTIONS
    1.
    发明申请
    SYSTEM AND METHOD FOR MEASURING AND ANALYZING LITHOGRAPHIC PARAMETERS AND DETERMINING OPTIMAL PROCESS CORRECTIONS 有权
    用于测量和分析光刻参数的系统和方法以及确定最佳过程校正

    公开(公告)号:US20070035712A1

    公开(公告)日:2007-02-15

    申请号:US11462022

    申请日:2006-08-02

    IPC分类号: G03B27/52

    CPC分类号: G03F7/70666 G03F7/70641

    摘要: A method of using an in-situ aerial image sensor array is disclosed to separate and remove the focal plane variations caused by the image sensor array non-flatness and/or by the exposure tool by collecting sensor image data at various nominal focal planes and by determining best focus at each sampling location by analysis of the through-focus data. In various embodiments, the method provides accurate image data at best focus anywhere in the exposure field, image data covering an exposure-dose based process window area, and a map of effective focal plane distortions. The focus map can be separated into contributions from the exposure tool and contributions due to topography of the image sensor array by suitable calibration or self-calibration procedures. The basic method enables a wide range of applications, including for example qualification testing, process monitoring, and process control by deriving optimum process corrections from analysis of the image sensor data.

    摘要翻译: 公开了一种使用原位空间图像传感器阵列的方法,以分离和去除由图像传感器阵列非平坦度引起的焦平面变化和/或通过曝光工具通过在各种标称焦平面处收集传感器图像数据,并且通过 通过分析焦点数据确定每个采样位置的最佳焦点。 在各种实施例中,该方法在曝光区域的任何地方提供最佳焦点上的精确图像数据,覆盖基于曝光剂量的过程窗口区域的图像数据和有效焦平面失真的映射。 焦点图可以通过适当的校准或自校准程序分为曝光工具的贡献和由于图像传感器阵列的形貌造成的贡献。 基本方法可以通过从图像传感器数据分析中得出最佳的过程校正,实现广泛的应用,包括例如鉴定测试,过程监控和过程控制。

    Method for detecting, sampling, analyzing, and correcting marginal patterns in integrated circuit manufacturing
    2.
    发明申请
    Method for detecting, sampling, analyzing, and correcting marginal patterns in integrated circuit manufacturing 有权
    在集成电路制造中检测,采样,分析和校正边缘图案的方法

    公开(公告)号:US20060273266A1

    公开(公告)日:2006-12-07

    申请号:US11437594

    申请日:2006-05-19

    IPC分类号: G01N21/86

    摘要: One embodiment of a method for detecting, sampling, analyzing, and correcting hot spots in an integrated circuit design allows the identification of the weakest patterns within each design layer, the accurate determination of the impact of process drifts upon the patterning performance of the real mask in a real scanner, and the optimum process correction, process monitoring, and RET improvements to optimize integrated circuit device performance and yield. The combination of high speed simulation coupled with massive data collection capability on actual aerial images and/or resist images at the specific patterns of interest provides a complete methodology for optimum RET implementation and process monitoring.

    摘要翻译: 用于在集成电路设计中检测,采样,分析和校正热点的方法的一个实施例允许识别每个设计层内的最弱图案,精确确定工艺的影响漂移对真实掩模的图案化性能 在真正的扫描仪中,以及最佳的过程校正,过程监控和RET改进,以优化集成电路器件的性能和产量。 将高速仿真与实际航空图像上的海量数据收集能力和/或特定感兴趣图像的抗蚀图像相结合,为最佳的RET实施和过程监控提供了一个完整的方法。

    METHOD FOR IDENTIFYING AND USING PROCESS WINDOW SIGNATURE PATTERNS FOR LITHOGRAPHY PROCESS CONTROL
    3.
    发明申请
    METHOD FOR IDENTIFYING AND USING PROCESS WINDOW SIGNATURE PATTERNS FOR LITHOGRAPHY PROCESS CONTROL 有权
    识别和使用过程窗口签名模式进行算法处理的方法

    公开(公告)号:US20070050749A1

    公开(公告)日:2007-03-01

    申请号:US11466978

    申请日:2006-08-24

    IPC分类号: G06F17/50

    摘要: A method for identifying process window signature patterns in a device area of a mask is disclosed. The signature patterns collectively provide a unique response to changes in a set of process condition parameters to the lithography process. The signature patterns enable monitoring of associated process condition parameters for signs of process drift, analyzing of the process condition parameters to determine which are limiting and affecting the chip yields, analyzing the changes in the process condition parameters to determine the corrections that should be fed back into the lithography process or forwarded to an etch process, identifying specific masks that do not transfer the intended pattern to wafers as intended, and identifying groups of masks that share common characteristics and behave in a similar manner with respect to changes in process condition parameters when transferring the pattern to the wafer.

    摘要翻译: 公开了一种用于识别掩模的设备区域中的处理窗口签名图案的方法。 签名图案集合地提供了对一组工艺条件参数对光刻工艺的变化的唯一响应。 签名模式可以监控相关的过程状态参数,以了解过程漂移的迹象,分析过程状态参数,以确定哪些是限制和影响芯片产量,分析过程状态参数的变化以确定应反馈的校正 进入光刻过程或转发到蚀刻工艺,识别不按照预期将预期图案转印到晶片的特定掩模,以及鉴定相对于工艺条件参数的变化共享共同特性并以类似方式表现的掩模组, 将图案转移到晶片。

    CO-OPTIMIZATION OF SCATTEROMETRY MARK DESIGN AND PROCESS MONITOR MARK DESIGN
    5.
    发明申请
    CO-OPTIMIZATION OF SCATTEROMETRY MARK DESIGN AND PROCESS MONITOR MARK DESIGN 审中-公开
    数字标注设计与过程监控标志设计的优化

    公开(公告)号:US20130325395A1

    公开(公告)日:2013-12-05

    申请号:US13486262

    申请日:2012-06-01

    IPC分类号: G01B11/02 G06F15/00

    摘要: An automated method for co-optimizing a scatterometry mark and a process monitoring mark is provided. Embodiments include generating a series of pattern profiles on a photoresist on a wafer; providing the series of pattern profiles, resist process parameters, and scatterometry critical dimension parameters as inputs for a scatterometry measurement; performing scatterometry measurement to generate spectra from the series of pattern profiles; and optimizing a sensitivity precision correlation for the resist process parameter.

    摘要翻译: 提供了一种用于共同优化散点测量标记和过程监控标记的自动化方法。 实施例包括在晶片上的光致抗蚀剂上产生一系列图案轮廓; 提供一系列图案轮廓,抗蚀剂工艺参数和散射关键尺寸参数作为散射测量的输入; 执行散射测量以从所述一系列图案轮廓生成光谱; 并优化抗蚀剂工艺参数的灵敏度精度相关性。

    Apparatus and methods for optically monitoring the fidelity of patterns produced by photolitographic tools
    6.
    发明授权
    Apparatus and methods for optically monitoring the fidelity of patterns produced by photolitographic tools 失效
    用于光学监测由光刻工具产生的图案的保真度的装置和方法

    公开(公告)号:US07557921B1

    公开(公告)日:2009-07-07

    申请号:US11250119

    申请日:2005-10-12

    IPC分类号: G01B11/00 G06K9/00 G03C5/00

    摘要: Disclosed are apparatus and methods for monitoring a characteristic associated with a product feature on a semiconductor product. A proxy target formed from at least one substructure that corresponds to a product feature is provided. The substructure is not individually resolvable by an optical tool. A characteristic of the proxy target is determined based on optically monitoring the proxy target using the optical tool. Based on the determined characteristic of the proxy target, it is then determined whether the corresponding product feature has a characteristic that is within a predetermined specification or whether a process parameter used to fabricate such product feature is within a predetermined specification. In a specific embodiment, the characteristic of the corresponding product feature includes a shape parameter and a position parameter.

    摘要翻译: 公开了用于监测与半导体产品上的产品特征相关联的特性的装置和方法。 提供了从与产品特征相对应的至少一个子结构形成的代理目标。 子结构不能通过光学工具单独分辨。 基于使用光学工具光学监视代理目标来确定代理目标的特性。 基于所确定的代理目标的特性,然后确定对应的产品特征是否具有在预定规格内的特征,或者用于制造这种产品特征的处理参数是否在预定规格内。 在具体实施例中,相应产品特征的特征包括形状参数和位置参数。

    Methods and systems for detecting defects in a reticle design pattern
    7.
    发明申请
    Methods and systems for detecting defects in a reticle design pattern 有权
    用于检测标线设计图案中的缺陷的方法和系统

    公开(公告)号:US20070035728A1

    公开(公告)日:2007-02-15

    申请号:US11314813

    申请日:2005-12-20

    IPC分类号: G01N21/88

    CPC分类号: G01N21/95607 G03F1/84

    摘要: Computer-implemented methods and systems for detecting defects in a reticle design pattern are provided. One computer-implemented method includes acquiring images of a field in the reticle design pattern. The images illustrate how the field will be printed on a wafer at different values of one or more parameters of a wafer printing process. The field includes a first die and a second die. The method also includes detecting defects in the field based on a comparison of two or more of the images corresponding to two or more of the different values. In addition, the method includes determining if individual defects located in the first die have substantially the same within die position as individual defects located in the second die.

    摘要翻译: 提供了用于检测标线设计图案中的缺陷的计算机实现的方法和系统。 一种计算机实现的方法包括获取标线设计图案中的场的图像。 这些图像示出了如何以晶片印刷过程的一个或多个参数的不同值将晶片印刷在晶片上。 该领域包括第一模具和第二模具。 该方法还包括基于对应于两个或多个不同值的两个或更多个图像的比较来检测场中的缺陷。 另外,该方法包括确定位于第一管芯中的各个缺陷是否位于与位于第二管芯内的各个缺陷的管芯位置内基本相同的位置。

    Computer-implemented methods for detecting defects in reticle design data
    8.
    发明申请
    Computer-implemented methods for detecting defects in reticle design data 有权
    用于检测标线设计数据缺陷的计算机实现方法

    公开(公告)号:US20060236294A1

    公开(公告)日:2006-10-19

    申请号:US11048630

    申请日:2005-01-31

    IPC分类号: G06F17/50

    摘要: Computer-implemented methods for detecting defects in reticle design data are provided. One method includes generating a first simulated image illustrating how the reticle design data will be printed on a reticle using a reticle manufacturing process. The method also includes generating second simulated images using the first simulated image. The second simulated images illustrate how the reticle will be printed on a wafer at different values of one or more parameters of a wafer printing process. The method further includes detecting defects in the reticle design data using the second simulated images. Another method includes the generating steps described above in addition to determining a rate of change in a characteristic of the second simulated images as a function of the different values. This method also includes detecting defects in the reticle design data based on the rate of change.

    摘要翻译: 提供了用于检测标线设计数据缺陷的计算机实现方法。 一种方法包括生成第一模拟图像,其示出如何使用标线制造工艺将掩模版设计数据印刷在掩模版上。 该方法还包括使用第一模拟图像生成第二模拟图像。 第二模拟图像示出了在晶片印刷过程的一个或多个参数的不同值下如何将掩模版印刷在晶片上。 该方法还包括使用第二模拟图像检测掩模版设计数据中的缺陷。 除了确定作为不同值的函数的第二模拟图像的特性的变化率之外,另一种方法包括上述生成步骤。 该方法还包括基于变化率检测掩模版设计数据中的缺陷。

    Methods, systems, and carrier media for evaluating reticle layout data
    9.
    发明申请
    Methods, systems, and carrier media for evaluating reticle layout data 有权
    用于评估标线布局数据的方法,系统和载体介质

    公开(公告)号:US20060062445A1

    公开(公告)日:2006-03-23

    申请号:US11226698

    申请日:2005-09-14

    IPC分类号: G06F17/50 G06K9/00

    CPC分类号: G06F17/5068 G03F1/36

    摘要: Various computer-implemented methods are provided. One method for evaluating reticle layout data includes generating a simulated image using the reticle layout data as input to a model of a reticle manufacturing process. The simulated image illustrates how features of the reticle layout data will be formed on a reticle by the reticle manufacturing process. The method also includes determining manufacturability of the reticle layout data using the simulated image. The manufacturability is a measure of how accurately the features will be formed on the reticle. Also provided are various carrier media that include program instructions executable on a computer system for performing a method for evaluating reticle layout data as described herein. In addition, systems configured to evaluate reticle layout data are provided. The systems include a computer system and a carrier medium that includes program instructions executable on the computer system for performing method(s) described herein.

    摘要翻译: 提供了各种计算机实现的方法。 用于评估标线布局数据的一种方法包括使用标线布局数据作为对标线制造工艺的模型的输入来生成模拟图像。 模拟图像说明如何通过标线制造过程在掩模版上形成标线布局数据的特征。 该方法还包括使用模拟图像确定标线布局数据的可制造性。 可制造性是衡量在光罩上形成特征的准确度。 还提供了各种载体介质,其包括可在计算机系统上执行的程序指令,用于执行如本文所述的用于评估标线布局数据的方法。 此外,还提供了配置为评估标线布局数据的系统。 该系统包括计算机系统和载体介质,其包括可在计算机系统上执行以执行本文所述的方法的程序指令。