摘要:
An optical switch operating with an optical pumping source. The switch includes a microcavity structure that is resonant with both the pumping source and the input optical signal. The microcavity structure includes a cavity in between two reflectors. The input optical signal is switched from one to zero, by varying the pump source intensity. The microcavity provides amplification of the pumping energy allowing for a nonlocal optical power source. In addition it also provides a way for fast optical modulation of the input optical signal using continuous wave pumping source.
摘要:
An optical amplifier on a silicon platform includes a first doped device layer and a second doped device layer. A gain medium is positioned between the first and second doped device layers. The gain medium comprises extrinsic gain materials so as to substantially confine in the gain medium a light signal and allow the optical amplifier to be electrically or optically pumped.
摘要:
An optical structure includes a substrate having two side surfaces. A first layer of high refractive index material is formed on the substrate. A sacrificial layer is formed on the first layer. A second layer of high refractive index material is formed on the sacrificial layer. At a predefined temperature the sacrificial layer is evaporated, thus forming an air gap between the first layer and the second layer.
摘要:
A condensed matter structure includes a substrate having a resonant microcavity formed by reflectors, having a reflectivity R, arranged relative to an optically-active material to form a cavity. The optically-active material has a thickness L, an optical emission line centered at a wavelength &lgr;c, and an optical absorption coefficient &agr;0 at &lgr;c. The magnitude of absorption (&agr;0L) at &lgr;c by the optically-active material is greater than the probability (1−R) that an electromagnetic field having an energy of &lgr;c exits microcavity and thereby results in a strong light-matter interaction between the optically-active material and the electromagnetic field confined in the microcavity.
摘要:
An optical amplifier on a silicon platform includes a first doped device layer and a second doped device layer. A gain medium is positioned between the first and second doped device layers. The gain medium comprises extrinsic gain materials so as to substantially confine in the gain medium a light signal and allow the optical amplifier to be electrically or optically pumped.
摘要:
An optical amplifier on a silicon platform includes a first doped device layer and a second doped device layer. A gain medium is positioned between the first and second doped device layers. The gain medium comprises extrinsic gain materials so as to substantially confine in the gain medium a light signal and allow the optical amplifier to be electrically or optically pumped.
摘要:
A waveguide for amplifying electromagnetic radiation of a characteristic wavelength includes a first reflector, a second reflector, and a gain medium having a characteristic wavelength of emission disposed between the first and second reflectors. The first and second reflectors are spaced apart from each other to form a microcavity which is off-resonance with respect to the characteristic wavelength of light emitted by the excited gain medium.
摘要:
A patterned nonreciprocal optical resonator structure is provided that includes a resonator structure that receives an optical signal. A top cladding layer is deposited on a selective portion of the resonator structure. The top cladding layer is patterned so as to expose the core of the resonator structure defined by the selective portion. A magneto-optically active layer includes a magneto-optical medium being deposited on the exposed core of the resonator structure so as to generate optical non-reciprocity.
摘要:
A light emitting device is provided that includes at least one first semiconductor material layers and at least one second semiconductor material layers. At least one near-direct band gap material layers are positioned between the at least one first semiconductor layers and the at least one second semiconductor material layers. The at least one first semiconductor layers and the at least one second material layers have a larger band gap than the at least one near-direct band gap material layers. The at least one near-direct band gap material layers have an energy difference between the direct and indirect band gaps of less than 0.5 eV.
摘要:
The invention provides a waveguide with a waveguide core having longitudinal sidewall surfaces, a longitudinal top surface, and a longitudinal bottom surface that is disposed on a substrate. An interface layer is disposed on at least one longitudinal sidewall surface of the waveguide core. A waveguide cladding layer is disposed on at least the waveguide core sidewall and top surfaces, over the interface layer. The waveguide of the invention can be produced by forming a waveguide undercladding layer on a substrate, and then forming a waveguide core on the undercladding layer. An interface layer is then formed on at least a longitudinal sidewall surface of the waveguide core, and an upper cladding layer is formed on a longitudinal top surface and on longitudinal sidewall surfaces of the waveguide core, over the interface layer.