摘要:
In ID generation for a semiconductor package or a semiconductor integrated circuit chip, a topographic characteristic to be utilized as specific information is selected from at least one topographic characteristic that the semiconductor package or the semiconductor integrated circuit has. Then, the selected topographic characteristic is measured as the specific information and an ID for identification is generated for the semiconductor package or the semiconductor integrated circuit chip based on the measured specific information.
摘要:
A controller for a fuel cell power system comprises a main switching element inserted between a fuel cell power unit and a dc-ac converter, a secondary battery connected to a charging switching element and a discharging switching element, and a control circuit for switching elements, the charging switching element and discharging switching element being connected in series and across the main switching element. The secondary battery is charged by turning on the charging switching element when the fuel cell power unit is in warming up operation or when the dc-ac converter is broken off from the output circuit of the power unit to stop the operation of the fuel cell power unit, while the battery is discharged through the dc-ac converter by turning on the discharging switching element when the fuel cell power unit reaches the rated operating temperature.
摘要:
A power converting apparatus comprising intermediate DC power which rectifies AC from a commercial power to output DC, a solar array connected in parallel to the intermediate DC power, an inverter which converts DC inputted respectively from the intermediate DC power and the solar array into AC having the variable frequency and the variable voltage, then supply its AC output to a load, and circuit networks for power regeneration which regenerates a surplus power of the solar array into the commercial power, when the generated voltage of the solar array exceeds the prescribed voltage.
摘要:
In a Group-III-element nitride semiconductor device including a Group-III-element nitride crystal layer stacked on a Group-III-element nitride crystal substrate, the substrate is produced by allowing nitrogen of nitrogen-containing gas and a Group III element to react with each other to crystallize in a melt (a flux) containing at least one of alkali metal and alkaline-earth metal, and a thin film layer is formed on the substrate and the thin film has a lower diffusion coefficient than that of the substrate with respect to impurities contained in the substrate. The present invention provides a semiconductor device in which alkali metal is prevented from diffusing.
摘要:
A preset tuning apparatus adapted for selecting a preset channel among a plurality of channels, comprising a tuner including a tuning circuit including a voltage controlled variable capacitance diode, a manually adjustable tuning voltage generator for providing a tuning voltage to the voltage controlled variable capacitance diode, a non-volatile analog storage including a plurality of floating gate type field effect memory devices, a band selection switch, a preset selection switch, a preset memory switch, addressing circuits coupled to the band selection and preset selection switches for addressing a corresponding one of the plurality of memory devices, an erase/write/read voltage generator, and a mode control coupled to the erase/write/read voltage generator and responsive to the band selection, preset selection and preset memory switches for alternately and repetitively writing and reading the analog value in the addressed memory device until the data corresponding to the tuning voltage of the tuning voltage generator is written in the memory device in the write and read modes and for reading thereafter the data in the memory device for providing the same as a tuning voltage to the voltage controlled variable capacitance diode in the preset mode, whereby the preset selection is achieved based on the data as written in and read out from the addressed memory device. Preferably, the data concerning the tuning voltage is divided into a rough tuning voltage and a fine tuning voltage, which are separately stored in separate memory devices. Preferably, the read tuning voltage is once stored in a buffer memory and the tuning voltage in the buffer memory is corrected responsive to an automatic frequency control signal.
摘要:
An automatic tuning apparatus comprising a tuner having a tank circuit employing a voltage controlled variable capacitance diode as a circuit element, which diode is supplied in the reverse direction with a scanning control voltage from a solid state potential memory device, which control voltage is varied under the control of a scanning voltage control circuit to scan the frequencies in the frequency band by the tuner and is set by a scan stop signal obtained from the tuner as a result of tuning of the tuner to a certain frequency, and a pair of manual switches for upward and downward scanning, a first flip-flop to be reset by the closing of either manual switch and to be set by the scan stop signal, a second flip-flop to be set and reset by the closing of the downward and upward scanning switches, respectively, a third flip-flop to be set and reset by the closing of both manual switches and caused to be reversed in the storing state thereof when the scanning voltage reaches the maximum or minimum value thereof, the said scanning voltage control circuit being controlled by the logical combination of the storing state of these flip-flops such that the frequency is scanned gradually in the direction as selected by the manual switch but rapidly in the direction not selected by the switch.
摘要:
An automatic tuning apparatus, such as an automatic channel selector as incorporated in a television receiver, comprising a tuner using a voltage controlled variable capacitance diode such that the variable capacitance thereof constitutes a portion of a tuning circuit of the tuner for changing the tuning frequency, and a solid state electrochemical potential memory devices an output voltage of which is clamped as selected by selective manual operation, the resultant voltage being applied to the capacitance diode in a reverse direction, which memory device is controlled so as to be charged or discharged in response to selective manual operation until an increased or decreased terminal voltage thereof decreases or increases the capacitance across the diode and thus increases or decreases the tuning frequency of the tuner and a particular frequency is tuned. An intermediate frequency output, obtained as a result of tuning, is used to disable the abovementioned charging or discharging operation of the potential memory device.
摘要:
In a Group-III-element nitride semiconductor device including a Group-III-element nitride crystal layer stacked on a Group-III-element nitride crystal substrate, the substrate is produced by allowing nitrogen of nitrogen-containing gas and a Group III element to react with each other to crystallize in a melt (a flux) containing at least one of alkali metal and alkaline-earth metal, and a thin film layer is formed on the substrate and the thin film has a lower diffusion coefficient than that of the substrate with respect to impurities contained in the substrate. The present invention provides a semiconductor device in which alkali metal is prevented from diffusing.
摘要:
A personal design system according to the present invention designs the appearance of an equipment suiting the sensibility and the physical features of a user by establishing data communication between a user terminal comprising a user information inputting section and a server on the side of a producer. The user inputs user information such as the sensibility and the physical features of the user corresponding to the designed appearance of the equipment using the user information inputting section. The equipment having the designed appearance intended by the user is produced on the basis of the inputted user information and a database provided in the server by designing means provided in the user terminal.
摘要:
A vehicle which is capable of recognizing shapes in a predetermined area, comprising: a plurality of ultrasonic sensors, an encoder, map drawing means for sequentially and continuously drawing a map of the prescribed area determined by information received from the encoder and ultrasonic sensors, memory means for storing the map drawn by the map drawing means and control means for instructing rectilinear movement, starting stopping and turning of the vehicle so as to move in a serpentine fashion, wherein the ultrasonic sensors, encoder and map drawing means are operated by the control means, the memory means writes and stores a history of its own movements in the area and as information is received remembers detected information from the encoder, and a change of direction of the vehicle which is instructed by the control means is determined by information on the map as well as the areas through which the vehicle has previously passed.