公开(公告)号：US20130302981A1

公开(公告)日：2013-11-14

申请号：US13941747

申请日：2013-07-15

Applicant: Micron Technology, Inc.

Inventor： Dan Millward ,  Kaveri Jain ,  Zishu Zhang ,  Lijing Gou ,  Anton J. deVilliers ,  Jianming Zhou ,  Yuan He ,  Michael D. Hyatt ,  Scott L. Light

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/10882 ,  H01L27/10888

Abstract: Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.

Abstract translation: 一些实施例包括形成图案的方法。 半导体衬底被形成为在一组导电结构之上包括电绝缘材料。 跨导电结构限定互连区域，并且互连区域的相对侧上的区域被定义为次级区域。 特征的二维阵列形成在电绝缘材料上。 二维阵列跨越互连区域并跨越次级区域延伸。 二维阵列的图案通过互连区域的电绝缘材料转移以形成延伸穿过电绝缘材料和导电结构的接触开口，并且二次区域的二维阵列的任何部分 被转移到电绝缘材料中。

公开(公告)号：US20130252142A1

公开(公告)日：2013-09-26

申请号：US13892711

申请日：2013-05-13

Applicant: Micron Technology, Inc.

Inventor： Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton J. deVilliers ,  Michael Hyatt ,  Jianming Zhou ,  Scott L. Light ,  Dan B. Millward

IPC: G03F1/38

CPC classification number: G03F1/38 ,  G03F1/50 ,  G03F1/54 ,  Y10T29/49002

Abstract: An imaging device comprising a first region and a second region. Imaging features in the first region and assist features in the second region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.

Abstract translation: 一种成像装置，包括第一区域和第二区域。 第一区域中的成像特征和第二区域中的辅助特征基本上彼此相同，并且基本上在间距上形成。 还公开了形成成像装置的方法和形成半导体器件结构的方法。

公开(公告)号：US20150015860A1

公开(公告)日：2015-01-15

申请号：US14500625

申请日：2014-09-29

Applicant: Micron Technology, Inc.

Inventor： Scott L. Light ,  Dan Millward ,  Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton J. deVilliers ,  Michael D. Hyatt ,  Jianming Zhou

IPC: G03F7/20

CPC classification number: G03F7/70741 ,  G03F1/38 ,  G03F7/70433 ,  G03F7/70891

Abstract: A method of mitigating asymmetric lens heating in photolithographically patterning a photo-imageable material using a reticle includes determining where first hot spot locations are expected to occur on a lens when using a reticle to pattern a photo-imageable material. The reticle is then fabricated to include non-printing features within a non-printing region of the reticle which generate additional hot spot locations on the lens when using the reticle to pattern the photo-imageable material. Other implementations are contemplated, including reticles which may be independent of method of use or fabrication.

Abstract translation: 使用光掩模光刻地图案化可光成像材料的方法来减轻不对称透镜加热的方法包括当使用掩模版图案可光成像材料时，确定预期在透镜上将出现第一热点位置的位置。 然后制造掩模版以在掩模版的非印刷区域内包括非印刷特征，当使用掩模版对可光成像材料进行图案化时，其在透镜上产生额外的热点位置。 考虑了其他实施方式，包括可以独立于使用或制造方法的标线。

公开(公告)号：US09140977B2

公开(公告)日：2015-09-22

申请号：US13892711

申请日：2013-05-13

Applicant: Micron Technology, Inc.

Inventor： Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton J. deVilliers ,  Michael Hyatt ,  Jianming Zhou ,  Scott L. Light ,  Dan B. Millward

IPC: G03F1/36 ,  G03F1/38 ,  G03F1/54

CPC classification number: G03F1/38 ,  G03F1/50 ,  G03F1/54 ,  Y10T29/49002

Abstract: An imaging device comprising a first region and a second region. Imaging features in the first region and assist features in the second region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.

Abstract translation: 一种成像装置，包括第一区域和第二区域。 第一区域中的成像特征和第二区域中的辅助特征基本上彼此相同，并且基本上在间距上形成。 还公开了形成成像装置的方法和形成半导体器件结构的方法。

公开(公告)号：US20140247476A1

公开(公告)日：2014-09-04

申请号：US14277323

申请日：2014-05-14

Applicant: Micron Technology, Inc.

Inventor： Yuan He ,  Jianming Zhou ,  Scott L. Light ,  Anton deVilliers ,  Kaveri Jain ,  Zishu Zhang ,  Dan Millward

IPC: G02B26/06

CPC classification number: G02B26/06 ,  G03F7/70091 ,  G03F7/70125 ,  G03F7/70258 ,  G03F7/70308 ,  G03F7/705 ,  G03F7/706

Abstract: Some embodiments include system and methods to obtain information for adjusting variations in features formed on a substrate of a semiconductor device. Such methods can include determining a first pupil in an illumination system used to form a first feature, and determining a second pupil used to form a second feature. The methods can also include determining a pupil portion belonging to only one of the pupils, and generating a modified pupil portion from the pupil portion. Information associated with the modified pupil portion can be obtained for controlling a portion of a projection lens assembly of an illumination system. Other embodiments are described.

Abstract translation: 一些实施例包括用于获得用于调整形成在半导体器件的衬底上的特征的变化的信息的系统和方法。 这样的方法可以包括确定用于形成第一特征的照明系统中的第一光瞳，以及确定用于形成第二特征的第二光瞳。 所述方法还可以包括确定属于仅一个瞳孔的瞳孔部分，并且从瞳孔部分产生修改的瞳孔部分。 可以获得与修改的瞳孔部分相关联的信息，用于控制照明系统的投影透镜组件的一部分。 描述其他实施例。

公开(公告)号：US08815497B2

公开(公告)日：2014-08-26

申请号：US13941747

申请日：2013-07-15

Applicant: Micron Technology, Inc.

Inventor： Dan Millward ,  Kaveri Jain ,  Zishu Zhang ,  Lijing Gou ,  Anton J. deVillers ,  Jianming Zhou ,  Yuan He ,  Michael Hyatt ,  Scott L. Light

IPC: G03F7/26

CPC classification number: H01L21/76879 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/10882 ,  H01L27/10888

Abstract: Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.

Abstract translation: 一些实施例包括形成图案的方法。 半导体衬底被形成为在一组导电结构之上包括电绝缘材料。 跨导电结构限定互连区域，并且互连区域的相对侧上的区域被定义为次级区域。 特征的二维阵列形成在电绝缘材料上。 二维阵列跨越互连区域并跨越次级区域延伸。 二维阵列的图案通过互连区域的电绝缘材料转移以形成延伸穿过电绝缘材料和导电结构的接触开口，并且二次区域的二维阵列的任何部分 被转移到电绝缘材料中。