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公开(公告)号:US20210294407A1
公开(公告)日:2021-09-23
申请号:US16821579
申请日:2020-03-17
Applicant: Micron Technology, Inc.
Inventor: Liang Yu , Jonathan Parry
IPC: G06F1/3234 , G06F1/3296 , G11C5/14
Abstract: A workload level in an incoming request queue is determined based on one or more operations requested by a host system for execution by a memory sub-system. Based on the workload level in the incoming request queue, a set of memory dies of the memory sub-system to be activated for execution of the one or more operations is identified. Based on a power budget level, a power mode configuration for a memory die of the set of memory dies is determined. One or more parameters of the memory die are configured to establish the power mode configuration.
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公开(公告)号:US20200210596A1
公开(公告)日:2020-07-02
申请号:US16236754
申请日:2018-12-31
Applicant: Micron Technology, Inc.
Inventor: Giuseppe Cariello , Jonathan Parry
Abstract: A memory device embodiment may include an array of non-volatile memory cells including a protected memory region. The protected memory region may include a dedicated sub region established by a host. The memory device embodiment may also include a memory controller configured to wipe the protected memory region or execute other security functions by issuing an authenticated data write command to the dedicated sub region of the protected region. Issuing the authenticated data write command may include signing the command with a key shared with the host that established the sub region.
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公开(公告)号:US20200210080A1
公开(公告)日:2020-07-02
申请号:US16237134
申请日:2018-12-31
Applicant: Micron Technology, Inc.
Inventor: David Aaron Palmer , Sean L. Manion , Jonathan Parry , Stephen Hanna , Qing Liang , Nadav Grosz , Christian M. Gyllenskog , Kulachet Tanpairoj
Abstract: Apparatus and methods are disclosed, including using a memory controller to partition a memory array into a first portion and a second portion, the first portion and second portion having non-overlapping logical block addressing (LBA) ranges. The memory controller assigns a first granularity of a first logical-to-physical (L2P) mapping table entry for the first portion of the memory array designated for a first usage, and a second granularity of a second L2P mapping table entry for the second portion of the memory array designated for a second usage, where the second granularity is not equal to the first granularity. The memory controller stores the first granularity and the second granularity in the memory array, and stores at least a portion of the first L2P mapping table entry and the second L2P mapping table entry in an L2P cache of the memory controller.
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公开(公告)号:US11775218B2
公开(公告)日:2023-10-03
申请号:US17549181
申请日:2021-12-13
Applicant: Micron Technology, Inc.
Inventor: Liang Yu , Jonathan Parry
CPC classification number: G06F3/0659 , G06F3/0604 , G06F3/0673 , G11C16/26 , G11C16/0483
Abstract: A system to send a first command to execute an initialization process on a first memory die of a plurality of memory dies of a memory sub-system. The system reads a bit value indicating that the first memory die is executing a low peak current draw phase of the initialization process. In response to reading the bit value, sending a second command to a second memory die of the plurality of memory dies of the memory sub-system, the second command to execute the initialization process on the second memory die.
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公开(公告)号:US20190095131A1
公开(公告)日:2019-03-28
申请号:US16201576
申请日:2018-11-27
Applicant: Micron Technology, Inc.
Inventor: George Pax , Jonathan Parry
IPC: G06F3/06 , G06F11/10 , G06F12/02 , G11C5/04 , G11C5/14 , G11C7/10 , G11C7/22 , G11C8/00 , G11C16/32 , G11C29/52
CPC classification number: G06F3/0656 , G06F3/061 , G06F3/0619 , G06F3/0685 , G06F3/0688 , G06F11/1068 , G06F11/1072 , G06F12/0246 , G06F2212/1032 , G06F2212/7202 , G11C5/04 , G11C5/141 , G11C7/10 , G11C7/22 , G11C8/00 , G11C11/005 , G11C16/32 , G11C29/52 , G11C29/883 , G11C2029/0409 , G11C2029/0411 , G11C2207/2245
Abstract: Apparatus and methods are provided for operating a non-volatile memory module. In an example, a method can include filling a first plurality of pages of a first non-volatile memory with first data from a first data lane that includes a first volatile memory device, and filling a second plurality of pages of the first non-volatile memory device with second data from a second data lane that includes a second volatile memory device. In certain examples, the first plurality of pages does not include data from the second data lane.
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公开(公告)号:US09891864B2
公开(公告)日:2018-02-13
申请号:US15000812
申请日:2016-01-19
Applicant: Micron Technology, Inc.
Inventor: George Pax , Jonathan Parry
CPC classification number: G06F3/0656 , G06F3/061 , G06F3/0619 , G06F3/0685 , G06F3/0688 , G06F11/1072 , G06F12/0246 , G06F2212/1032 , G06F2212/7202 , G11C5/04 , G11C5/141 , G11C7/10 , G11C7/22 , G11C8/00 , G11C16/32 , G11C29/52 , G11C2029/0411 , G11C2207/2245
Abstract: Apparatus and methods are provided for operating a non-volatile memory module. In an example, a method can include filling a first plurality of pages of a first non-volatile memory with first data from a first data lane that includes a first volatile memory device, and filling a second plurality of pages of the first non-volatile memory device with second data from a second data lane that includes a second volatile memory device. In certain examples, the first plurality of pages does not include data from the second data lane.
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公开(公告)号:US20220100431A1
公开(公告)日:2022-03-31
申请号:US17549181
申请日:2021-12-13
Applicant: Micron Technology, Inc.
Inventor: Liang Yu , Jonathan Parry
Abstract: A system to send a first command to execute an initialization process on a first memory die of a plurality of memory dies of a memory sub-system. The system reads a bit value indicating that the first memory die is executing a low peak current draw phase of the initialization process. In response to reading the bit value, sending a second command to a second memory die of the plurality of memory dies of the memory sub-system, the second command to execute the initialization process on the second memory die.
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公开(公告)号:US20210357149A1
公开(公告)日:2021-11-18
申请号:US16875464
申请日:2020-05-15
Applicant: Micron Technology, Inc.
Inventor: Liang Yu , Jonathan Parry
Abstract: A system to send a first command to a first memory die of a plurality of memory dies of a memory sub-system the first command to execute an initialization process. The system reads a first bit value from the first memory die, the first bit value indicating the first memory die is executing a peak current phase of the initialization process. The system reads a second bit value from the first memory die, the second bit value indicating the first memory die is executing a safe phase of the initialization process. In response to reading the second bit value, a second command is sent to a second memory die to execute the initialization process.
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公开(公告)号:US20170206036A1
公开(公告)日:2017-07-20
申请号:US15000812
申请日:2016-01-19
Applicant: Micron Technology Inc.
Inventor: George Pax , Jonathan Parry
CPC classification number: G06F3/0656 , G06F3/061 , G06F3/0619 , G06F3/0685 , G06F3/0688 , G06F11/1072 , G06F12/0246 , G06F2212/1032 , G06F2212/7202 , G11C5/04 , G11C5/141 , G11C7/10 , G11C7/22 , G11C8/00 , G11C16/32 , G11C29/52 , G11C2029/0411 , G11C2207/2245
Abstract: Apparatus and methods are provided for operating a non-volatile memory module. In an example, a method can include filling a first plurality of pages of a first non-volatile memory with first data from a first data lane that includes a first volatile memory device, and filling a second plurality of pages of the first non-volatile memory device with second data from a second data lane that includes a second volatile memory device. In certain examples, the first plurality of pages does not include data from the second data lane.
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公开(公告)号:US11321468B2
公开(公告)日:2022-05-03
申请号:US16236754
申请日:2018-12-31
Applicant: Micron Technology, Inc.
Inventor: Giuseppe Cariello , Jonathan Parry
Abstract: A memory device embodiment may include an array of non-volatile memory cells including a protected memory region. The protected memory region may include a dedicated sub region established by a host. The memory device embodiment may also include a memory controller configured to wipe the protected memory region or execute other security functions by issuing an authenticated data write command to the dedicated sub region of the protected region. Issuing the authenticated data write command may include signing the command with a key shared with the host that established the sub region.
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