公开(公告)号：US20060118686A1

公开(公告)日：2006-06-08

申请号：US11283837

申请日：2005-11-22

申请人： Min Hsieh ,  Wen-Chin Lin

发明人： Min Hsieh ,  Wen-Chin Lin

IPC分类号： E04G3/00

CPC分类号： G06F1/1601 ,  F16M11/10 ,  F16M11/24 ,  F16M2200/028 ,  F16M2200/08 ,  G06F2200/1612

摘要： A terminal computer display assembly, which fixes a monitor onto a rotary supporting base provided. The support has a set of rails with a plurality of positioning units longitudinally aligned, and an inclined angular-positioning unit to limit the backward inclination of the support within a particular range of angles. The monitor is fixed onto a sliding block which is attached to the set of rails, allowing the monitor to move up or down freely for in a suitable highly location. A buffering unit is installed between the sliding block and the base, and it can prevent the monitor from falling instantaneously while positioning the height. The base is furthermore built with a circuit board inside for act as in interface for connecting to other accessories.

摘要翻译： 一种终端计算机显示组件，其将监视器固定到所提供的旋转支撑基座上。 支撑件具有一组轨道，多个定位单元纵向排列，以及倾斜的角度定位单元，用于限制支撑件在特定角度范围内的向后倾斜。 显示器固定在一个滑块上，该滑块与一组导轨相连，允许显示器在适当的高度位置自由上下移动。 缓冲单元安装在滑块和底座之间，可以防止显示器在定位高度时立即下降。 底座还内置有电路板，用于连接其他配件的接口。

公开(公告)号：US08153471B2

公开(公告)日：2012-04-10

申请号：US12945860

申请日：2010-11-14

申请人： Li-Shyue Lai ,  Chao-Hsiung Wang ,  Denny Tang ,  Wen-Chin Lin

发明人： Li-Shyue Lai ,  Chao-Hsiung Wang ,  Denny Tang ,  Wen-Chin Lin

IPC分类号： H01L21/06

CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/1691

摘要： A phase change memory structure and method for forming the same, the method including providing a substrate comprising a conductive area; forming a spacer having a partially exposed sidewall region at an upper portion of the spacer defining a phase change memory element contact area; and, wherein the spacer bottom portion partially overlaps the conductive area. Both these two methods can reduce active area of a phase change memory element, therefore, reducing a required phase changing electrical current.

摘要翻译： 一种相变存储器结构及其形成方法，所述方法包括提供包括导电区域的衬底; 在间隔物的上部形成具有部分暴露的侧壁区域的间隔物，其限定相变存储元件接触区域; 并且其中所述间隔件底部部分与所述导电区域重叠。 这两种方法都可以减少相变存储元件的有效面积，从而减少所需的相变电流。

公开(公告)号：US07964900B2

公开(公告)日：2011-06-21

申请号：US12586688

申请日：2009-09-24

申请人： Wen-Chin Lin ,  Denny Tang ,  Chuan-Ying Lee ,  Hsu Chen Cheng

发明人： Wen-Chin Lin ,  Denny Tang ,  Chuan-Ying Lee ,  Hsu Chen Cheng

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L21/76 ,  H01L21/263 ,  H01L21/26506 ,  H01L21/266 ,  H01L21/823481 ,  H01L21/823878 ,  H01L27/08

摘要： A semiconductor substrate includes semi-insulating portions beneath openings in a patterned hardmask film formed over a semiconductor substructure to a thickness sufficient to prevent charged particles from passing through the hardmask. The semi-insulating portions include charged particles and may extend deep into the semiconductor substrate and electrically insulate devices formed on opposed sides of the semi-insulating portions. The charged particles may advantageously be protons and further substrate portions covered by the patterned hardmask film are substantially free of the charged particles.

摘要翻译： 半导体衬底包括在半导体子结构上形成的图案化硬掩模膜的开口下方的半绝缘部分，其厚度足以防止带电粒子通过硬掩模。 半绝缘部分包括带电粒子并且可以深深地延伸到半导体衬底中并且电绝缘形成在半绝缘部分的相对侧上的器件。 带电粒子可以有利地是质子，并且由图案化的硬掩模膜覆盖的另外的基底部分基本上没有带电粒子。

公开(公告)号：US07554145B2

公开(公告)日：2009-06-30

申请号：US11610760

申请日：2006-12-14

申请人： Yuan-Hung Liu ,  Chih-Ta Wu ,  Lan-Lin Chao ,  Yeur-Luen Tu ,  Wen-Chin Lin ,  Chia-Shiung Tsai

发明人： Yuan-Hung Liu ,  Chih-Ta Wu ,  Lan-Lin Chao ,  Yeur-Luen Tu ,  Wen-Chin Lin ,  Chia-Shiung Tsai

IPC分类号： H01L29/76

CPC分类号： H01L43/12 ,  H01L27/228

摘要： An improved magnetoresistive memory device has a reduced distance between the magnetic memory element and a conductive memory line used for writing to the magnetic memory element. The reduced distance is facilitated by forming the improved magnetoresistive memory device according to a method that includes forming a mask over the magnetoresistive memory element and forming an insulating layer over the mask layer, then removing portions of the insulating layer using a planarization process. A conductive via can then be formed in the mask layer, for example using a damascene process. The conductive memory line can then be formed over the mask layer and conductive via.

摘要翻译： 改进的磁阻存储器件具有减小的磁存储元件与用于写入磁存储器元件的导电存储器线之间的距离。 通过根据包括在磁阻存储元件上形成掩模并在掩模层上形成绝缘层，然后使用平坦化处理去除绝缘层的部分的方法，通过形成改进的磁阻存储器件来简化缩短的距离。 然后可以在掩模层中形成导电通孔，例如使用镶嵌工艺。 然后可以在掩模层和导电通孔上形成导电存储器线。

公开(公告)号：US20070091672A1

公开(公告)日：2007-04-26

申请号：US11610739

申请日：2006-12-14

申请人： Wen-Chin Lin ,  Denny Tang ,  Li-Shyue Lai ,  Chao-Hsiung Wang ,  Fan-Shi Lai

发明人： Wen-Chin Lin ,  Denny Tang ,  Li-Shyue Lai ,  Chao-Hsiung Wang ,  Fan-Shi Lai

IPC分类号： G11C11/00

CPC分类号： G11C11/1673

摘要： A non-destructive technique and related array for writing and reading magnetic memory cells, including sampling a first signal of a selected read line corresponding to select memory cells, applying a magnetic field to the select memory cells, sampling a second signal of the selected read line, and comparing the first and second signals to determine a logic state of the select memory cells.

摘要翻译： 一种用于写入和读取磁存储单元的非破坏性技术和相关阵列，包括对与选择存储器单元相对应的所选读取行的第一信号进行采样，向选择存储单元施加磁场，对所选择的读取的第二信号 并且比较第一和第二信号以确定选择存储器单元的逻辑状态。

公开(公告)号：US07173846B2

公开(公告)日：2007-02-06

申请号：US10366499

申请日：2003-02-13

申请人： Wen-Chin Lin ,  Denny D. Tang ,  Yu Der Chih

发明人： Wen-Chin Lin ,  Denny D. Tang ,  Yu Der Chih

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A new magnetic RAM cell device is achieved. The device comprisese, first, a MTJ cell comprising a free layer and a pinned layer separated by a dielectric layer. A reading switch is coupled between the free layer and a reading line. A writing switch is coupled between a first end of the pinned layer and a first writing line. A second end of the pinned layer is coupled to a second writing line. Architectures using MRAM cells are disclosed.

摘要翻译： 实现了新的磁性RAM单元装置。 该装置首先包括由电介质层分离的自由层和钉扎层的MTJ电池。 读取开关耦合在自由层和读取线之间。 写入开关耦合在固定层的第一端和第一写入线之间。 固定层的第二端耦合到第二写入线。 公开了使用MRAM单元的架构。

公开(公告)号：US07042032B2

公开(公告)日：2006-05-09

申请号：US10401945

申请日：2003-03-27

申请人： Wen-Chin Lin ,  Denny Duan-Lee Tang ,  Chao-Hsiung Wang

发明人： Wen-Chin Lin ,  Denny Duan-Lee Tang ,  Chao-Hsiung Wang

IPC分类号： H01L29/76

CPC分类号： H01L43/08 ,  G11C11/15 ,  H01L43/12

摘要： A magnetoresistive magnetic data storage product and a method for fabrication thereof both employ a magnetic data storage device formed over a substrate. The magnetic data storage device comprises a free magnetoresistive material layer separated from a pinned magnetoresistive material layer by a dielectric spacer material layer, each having a sidewall. The magnetic data storage product also comprises a sidewall spacer material layer formed annularly surrounding and covering the sidewall of at least one of the free magnetoresistive material layer and the pinned magnetoresistive material layer. The magnetic data storage product is fabricated with enhanced magnetic data storage density.

摘要翻译： 磁阻磁数据存储产品及其制造方法都采用形成在衬底上的磁数据存储装置。 磁数据存储装置包括通过电介质间隔物材料层与固定磁阻材料层分离的自由磁阻材料层，每层具有侧壁。 磁数据存储产品还包括环形围绕并覆盖自由磁阻材料层和钉扎磁阻材料层中的至少一个的侧壁的侧壁间隔物材料层。 磁数据存储产品采用增强的磁数据存储密度制造。

公开(公告)号：US07035083B2

公开(公告)日：2006-04-25

申请号：US10804899

申请日：2004-03-19

申请人： Wen-Chin Lin ,  Denny Tang ,  Li-Shyue Lai ,  Chung-Long Chang ,  Chun-Hon Chen

发明人： Wen-Chin Lin ,  Denny Tang ,  Li-Shyue Lai ,  Chung-Long Chang ,  Chun-Hon Chen

IPC分类号： H01G4/06

CPC分类号： H01L23/5223 ,  H01L2924/0002 ,  H01L2924/00

摘要： A capacitor for use within a microelectronic product employs a first capacitor plate layer that includes a first series of horizontally separated and interconnected tines. A capacitor dielectric layer separates the first capacitor plate layer from a second capacitor plate layer. The second capacitor plate layer includes a second series of horizontally separated and interconnected tines horizontally interdigitated with the first series of horizontally separated and interconnected tines. The capacitor is formed employing a self-aligned method and the capacitor dielectric layer is formed in a serpentine shape.

摘要翻译： 在微电子产品中使用的电容器采用第一电容器板层，其包括第一系列水平分离和互连的尖齿。 电容器电介质层将第一电容器板层与第二电容器板层分开。 第二电容器板层包括与第一系列水平分离和互相联接的齿水平地交叉指向的第二系列水平分离和互连的齿。 使用自对准方法形成电容器，并且电容器介电层形成为蛇形形状。

公开(公告)号：US20050077485A1

公开(公告)日：2005-04-14

申请号：US10681541

申请日：2003-10-08

申请人： Chao-Hsiung Wang ,  Denny Tang ,  Wen-Chin Lin ,  Li-Shyue Lai

发明人： Chao-Hsiung Wang ,  Denny Tang ,  Wen-Chin Lin ,  Li-Shyue Lai

IPC分类号： G21G5/00 ,  H01L21/027

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00

摘要： A method and system is disclosed for concentrating high energy particles on a predetermined area on a target semiconductor substrate. A high energy source for generating a predetermined amount of high energy particles, and an electromagnetic radiation source for generating low energy beams are used together. The system also uses a mask set having at least one mask with at least one alignment area and at least one mask target area thereon, the mask target area passing more high energy particles then any other area of the mask. At least one protection shield is incorporated in the system for protecting the alignment area from being exposed to the high energy particles, wherein the mask is aligned with the predetermined target semiconductor substrate by passing the low energy beams through the alignment area, wherein the high energy particles generated by the high energy source pass through the mask target area to land on the predetermined area on the target semiconductor substrate.

摘要翻译： 公开了一种用于将高能粒子集中在目标半导体衬底上的预定区域上的方法和系统。 用于产生预定量的高能粒子的高能量源和用于产生低能量束的电磁辐射源一起使用。 该系统还使用具有至少一个具有至少一个对准区域和至少一个掩模目标区域的掩模的掩模组，掩模目标区域通过更多的高能粒子，然后通过掩模的任何其它区域。 至少一个保护屏蔽被并入系统中，用于保护对准区域不暴露于高能粒子，其中通过使低能量束通过对准区域，掩模与预定目标半导体衬底对齐，其中高能量 由高能量源产生的粒子通过掩模对象区域落在目标半导体衬底上的预定区域上。

公开(公告)号：US08828745B2

公开(公告)日：2014-09-09

申请号：US13176790

申请日：2011-07-06

申请人： Wei-Che Tsao ,  Chia-Lin Hsu ,  Jen-Chieh Lin ,  Teng-Chun Tsai ,  Hsin-Kuo Hsu ,  Ya-Hsueh Hsieh ,  Ren-Peng Huang ,  Chih-Hsien Chen ,  Wen-Chin Lin ,  Yung-Lun Hsieh

发明人： Wei-Che Tsao ,  Chia-Lin Hsu ,  Jen-Chieh Lin ,  Teng-Chun Tsai ,  Hsin-Kuo Hsu ,  Ya-Hsueh Hsieh ,  Ren-Peng Huang ,  Chih-Hsien Chen ,  Wen-Chin Lin ,  Yung-Lun Hsieh

IPC分类号： H01L21/66 ,  H01L21/306 ,  H01L21/304 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/321

CPC分类号： H01L21/31053 ,  H01L21/3212 ,  H01L21/76898 ,  H01L22/12 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing TSVs, wherein the method comprises several steps as follows: A stack structure having a substrate and an ILD layer (inter layer dielectric layer) is provided, in which an opening penetrating through the ILD layer and further extending into the substrate is formed. After an insulator layer and a metal barrier layer are formed on the stack structure and the sidewalls of the opening, a top metal layer is then formed on the stack structure to fulfill the opening. A first planarization process stopping on the barrier layer is conducted to remove a portion of the top metal layer. A second planarization process stopping on the ILD layer is subsequently conducted to remove a portion of the metal barrier layer, a portion of the insulator layer and a portion of the top metal layer, wherein the second planarization process has a polishing endpoint determined by a light interferometry or a motor current.

摘要翻译： 一种制造TSV的方法，其中该方法包括以下几个步骤：提供具有基板和ILD层（层间电介质层）的堆叠结构，其中穿透ILD层并进一步延伸到基板中的开口是 形成。 在堆叠结构和开口的侧壁上形成绝缘体层和金属阻挡层之后，在堆叠结构上形成顶部金属层以实现开口。 进行停止在阻挡层上的第一平面化处理以去除顶部金属层的一部分。 随后进行停止在ILD层上的第二平坦化处理以去除金属阻挡层的一部分，绝缘体层的一部分和顶部金属层的一部分，其中第二平坦化工艺具有由光线确定的抛光终点 干涉测量或电机电流。