利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

47 条记录 (耗时 0.028 秒)

    Light-emitting device
    3.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US07973331B2

    公开(公告)日：2011-07-05

    申请号：US12318552

    申请日：2008-12-31

    申请人： Chia-Liang Hsu ,  Chih-Chiang Lu ,  Chien-Fu Huang ,  Chun-Yi Wu

    发明人： Chia-Liang Hsu ,  Chih-Chiang Lu ,  Chien-Fu Huang ,  Chun-Yi Wu

    IPC分类号： H01L33/00

    CPC分类号： H01L33/385 ,  H01L24/24 ,  H01L24/82 ,  H01L33/20 ,  H01L33/32 ,  H01L33/486 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2924/00

    摘要： The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure.

    摘要翻译： 本发明涉及一种发光装置。 本发明示出了一个实施例中的垂直发光器件，其包括以下元件：导电衬底包括通孔，设置在衬底的第一表面上的图案化半导体结构，第一焊盘和第二焊盘 设置在所述基板的第二表面上，穿过所述半导体结构层电连接的所述通孔的导电线以及所述通孔的至少一个侧壁上的绝缘层将所述导线与所述基板绝缘。 本发明示出了另一实施例中的水平发光器件，其包括以下元件：衬底包括第一倾斜侧壁，设置在衬底的第一表面上的图案化半导体结构，第一导线设置在至少 基板的第一倾斜侧壁和电连接图案化的半导体结构。

    LIGHT-EMITTING DEVICE
    4.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20110254046A1

    公开(公告)日：2011-10-20

    申请号：US13174183

    申请日：2011-06-30

    申请人： Chia-Liang Hsu ,  Chih-Chiang Lu ,  Chien-Fu Huang ,  Chun-Yi Wu

    发明人： Chia-Liang Hsu ,  Chih-Chiang Lu ,  Chien-Fu Huang ,  Chun-Yi Wu

    IPC分类号： H01L33/62

    CPC分类号： H01L33/385 ,  H01L24/24 ,  H01L24/82 ,  H01L33/20 ,  H01L33/32 ,  H01L33/486 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2924/00

    摘要： The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure.

    摘要翻译： 本发明涉及一种发光装置。 本发明示出了一个实施例中的垂直发光器件，其包括以下元件：导电衬底包括通孔，设置在衬底的第一表面上的图案化半导体结构，第一焊盘和第二焊盘 设置在所述基板的第二表面上，穿过所述半导体结构层电连接的所述通孔的导电线以及所述通孔的至少一个侧壁上的绝缘层将所述导线与所述基板绝缘。 本发明示出了另一实施例中的水平发光器件，其包括以下元件：衬底包括第一倾斜侧壁，设置在衬底的第一表面上的图案化半导体结构，第一导线设置在至少 基板的第一倾斜侧壁和电连接图案化的半导体结构。

    Light-emitting device
    5.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US08513699B2

    公开(公告)日：2013-08-20

    申请号：US13174183

    申请日：2011-06-30

    申请人： Chia-Liang Hsu ,  Chih-Chiang Lu ,  Chien-Fu Huang ,  Chun-Yi Wu

    发明人： Chia-Liang Hsu ,  Chih-Chiang Lu ,  Chien-Fu Huang ,  Chun-Yi Wu

    IPC分类号： H01L33/62

    CPC分类号： H01L33/385 ,  H01L24/24 ,  H01L24/82 ,  H01L33/20 ,  H01L33/32 ,  H01L33/486 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2924/00

    摘要： The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure.

    Light-emitting device
    6.
    发明申请
    Light-emitting device 有权
    发光装置

    公开(公告)号：US20090173963A1

    公开(公告)日：2009-07-09

    申请号：US12318552

    申请日：2008-12-31

    申请人： Chia-Liang Hsu ,  Chih-Chiang Lu ,  Chien-Fu Huang ,  Chun-Yi Wu

    发明人： Chia-Liang Hsu ,  Chih-Chiang Lu ,  Chien-Fu Huang ,  Chun-Yi Wu

    IPC分类号： H01L33/00

    CPC分类号： H01L33/385 ,  H01L24/24 ,  H01L24/82 ,  H01L33/20 ,  H01L33/32 ,  H01L33/486 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2924/00

    摘要： The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure.

    摘要翻译： 本发明涉及一种发光装置。 本发明示出了一个实施例中的垂直发光器件，其包括以下元件：导电衬底包括通孔，设置在衬底的第一表面上的图案化半导体结构，第一焊盘和第二焊盘 设置在所述基板的第二表面上，穿过所述半导体结构层电连接的所述通孔的导电线以及所述通孔的至少一个侧壁上的绝缘层将所述导线与所述基板绝缘。 本发明示出了另一实施例中的水平发光器件，其包括以下元件：衬底包括第一倾斜侧壁，设置在衬底的第一表面上的图案化半导体结构，第一导线设置在至少 基板的第一倾斜侧壁和电连接图案化的半导体结构。

    OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF
    10.
    发明申请
    OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF 有权
    光电器件及其制造方法

    公开(公告)号：US20120256164A1

    公开(公告)日：2012-10-11

    申请号：US13528059

    申请日：2012-06-20

    申请人： Shih-I Chen ,  Chia-Liang Hsu ,  Tzu-Chieh Hsu ,  Chun-Yi Wu ,  Chien-Fu Huang

    发明人： Shih-I Chen ,  Chia-Liang Hsu ,  Tzu-Chieh Hsu ,  Chun-Yi Wu ,  Chien-Fu Huang

    IPC分类号： H01L33/06

    CPC分类号： H01L33/46 ,  H01L33/22 ,  H01L33/42 ,  H01L33/44

    摘要： An optoelectronic device has a substrate and a first window layer on the substrate with a first sheet resistance, a first thickness, and a first impurity concentration. A second window layer has a second sheet resistance, a second thickness, and a second impurity concentration. A semiconductor system is between the first window layer and the second window layer. The second window layer has a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. A method for manufacturing is provided, having the steps of providing a substrate, forming a semiconductor system on the substrate, and forming a window layer on the semiconductor system. The window layer has a semiconductor material different from the semiconductor system. Selectively removing the window layer forms a width difference greater than 1 micron between the window layer and semiconductor system.

    摘要翻译： 光电器件具有衬底和衬底上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度。 第二窗口层具有第二薄层电阻，第二厚度和第二杂质浓度。 半导体系统在第一窗口层和第二窗口层之间。 第二窗口层具有与半导体系统不同的半导体材料，第二薄层电阻大于第一薄层电阻。 提供一种制造方法，其具有以下步骤：提供衬底，在衬底上形成半导体系统，并在半导体系统上形成窗口层。 窗口层具有与半导体系统不同的半导体材料。 选择性地去除窗口层在窗口层和半导体系统之间形成大于1微米的宽度差。