利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

180 条记录 (耗时 0.038 秒)

    Light emitting diode having an insulating substrate
    6.
    发明授权
    Light emitting diode having an insulating substrate 有权
    具有绝缘基板的发光二极管

    公开(公告)号：US06936860B2

    公开(公告)日：2005-08-30

    申请号：US10063822

    申请日：2002-05-16

    申请人： Shu-Wen Sung ,  Chin-Fu Ku ,  Chia-Cheng Liu ,  Min-Hsun Hsieh ,  Chao-Nien Huang ,  Chen Ou ,  Chuan-Ming Chang

    发明人： Shu-Wen Sung ,  Chin-Fu Ku ,  Chia-Cheng Liu ,  Min-Hsun Hsieh ,  Chao-Nien Huang ,  Chen Ou ,  Chuan-Ming Chang

    IPC分类号： H01L21/28 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/42 ,  H01L33/00 ,  H01L29/12

    CPC分类号： H01L33/04 ,  H01L33/14 ,  H01L33/325

    摘要： An LED includes an insulating substrate; a buffer layer positioned on the insulating substrate; an n+-type contact layer positioned on the buffer layer, the contact layer having a first surface and a second surface; an n-type cladding layer positioned on the first surface of the n+-type contact layer; a light-emitting layer positioned on the n-type cladding layer; a p-type cladding layer positioned on the light-emitting layer; a p-type contact layer positioned on the p-type cladding layer; an n+-type reverse-tunneling layer positioned on the p-type contact layer; a p-type transparent ohmic contact electrode positioned on the n+-type reverse-tunneling layer; and an n-type transparent ohmic contact electrode positioned on the second surface of the n+-type contact layer. The p-type transparent ohmic contact electrode and the n-type transparent ohmic contact electrode are made of the same materials.

    摘要翻译： LED包括绝缘基板; 位于所述绝缘基板上的缓冲层; 位于所述缓冲层上的n + + +型接触层，所述接触层具有第一表面和第二表面; 位于n +型接触层的第一表面上的n型覆层; 定位在n型包覆层上的发光层; 位于发光层上的p型覆层; 位于p型覆层上的p型接触层; 位于p型接触层上的n + H +型反向隧穿层; 位于n + +反向隧穿层上的p型透明欧姆接触电极; 以及位于n + +型接触层的第二表面上的n型透明欧姆接触电极。 p型透明欧姆接触电极和n型透明欧姆接触电极由相同的材料制成。

    High-brightness light emitting diode
    7.
    发明授权
    High-brightness light emitting diode 有权
    高亮度发光二极管

    公开(公告)号：US06225648B1

    公开(公告)日：2001-05-01

    申请号：US09352498

    申请日：1999-07-09

    申请人： Min-Hsun Hsieh ,  Ming-Jiunn Jou ,  Biing-Jye Lee

    发明人： Min-Hsun Hsieh ,  Ming-Jiunn Jou ,  Biing-Jye Lee

    IPC分类号： H01L3300

    CPC分类号： H01L33/02 ,  H01L33/14 ,  H01L33/145

    摘要： A high-brightness light emitting diode is provided. It comprises a first electrode; a semiconductor substrate formed on the first electrode; a first cladding layer of a first conductivity type formed on the semiconductor substrate; an active layer formed on the first cladding layer; a second cladding layer of a second conductivity type formed on the active layer; a window layer of the second conductivity type formed on the second cladding layer and having an upper surface and a bottom surface, wherein a groove of a predetermined shape is formed at a predetermined location and substantially extends from the upper surface to the bottom surface so that the window layer is substantially separated into a first window portion and a second window portion and the current in the first window portion substantially cannot flow into the second window portion; a contact layer formed on the first window portion; a transparent conductive layer consisting of a first conductive portion and a second conductive portion, wherein the first conductive portion is formed on the contact layer and an ohmic contact is formed between the first conductive portion and the contact layer, the second conductive portion contacts with the surface of the groove and the upper surface of the second window portion, and a Schottky barrier is formed between the conductive portion and the window layer; and a second electrode formed on the conductive layer at a location over the second window portion.

    摘要翻译： 提供了一种高亮度发光二极管。 它包括第一电极; 形成在所述第一电极上的半导体衬底; 形成在半导体衬底上的第一导电类型的第一包层; 形成在所述第一包层上的有源层; 形成在有源层上的第二导电类型的第二覆层; 第二导电类型的窗口层形成在第二包层上并具有上表面和底表面，其中预定形状的沟槽形成在预定位置并且基本上从上表面延伸到底表面，使得 窗口层基本上分离成第一窗口部分和第二窗口部分，并且第一窗口部分中的电流基本上不能流入第二窗口部分; 形成在所述第一窗口部分上的接触层; 由第一导电部分和第二导电部分组成的透明导电层，其中所述第一导电部分形成在所述接触层上，并且在所述第一导电部分和所述接触层之间形成欧姆接触，所述第二导电部分与所述第二导电部分接触， 沟槽的表面和第二窗口部分的上表面，并且在导电部分和窗口层之间形成肖特基势垒; 以及在所述第二窗口部分上方的位置处形成在所述导电层上的第二电极。

    Nitride light-emitting device having an adhesive reflecting layer
    8.
    发明授权
    Nitride light-emitting device having an adhesive reflecting layer 有权
    氮化物发光器件具有粘合反射层

    公开(公告)号：US07161301B2

    公开(公告)日：2007-01-09

    申请号：US10605833

    申请日：2003-10-29

    申请人： Min-Hsun Hsieh ,  Wen-Huang Liu ,  Ming-Jiunn Jou

    发明人： Min-Hsun Hsieh ,  Wen-Huang Liu ,  Ming-Jiunn Jou

    IPC分类号： H05B33/00 ,  H01L27/15 ,  H01L27/00

    CPC分类号： H01L33/0079 ,  H01L33/32 ,  H01L33/46 ,  Y10T428/12493

    摘要： A nitride light-emitting device having an adhesive reflecting layer includes a transparent adhesive layer, a nitride light-emitting stack layer and a metal reflecting layer. The transparent adhesive layer adheres the nitride light-emitting stack layer and the metal reflecting layer. Therefore, the metal reflecting layer can reflect light emitted from the light-emitting stack layer to increase the brightness of the nitride light-emitting device.

    摘要翻译： 具有粘合反射层的氮化物发光器件包括透明粘合剂层，氮化物发光堆叠层和金属反射层。 透明粘合剂层粘附氮化物发光堆叠层和金属反射层。 因此，金属反射层可以反射从发光层叠层发出的光，以增加氮化物发光器件的亮度。

    High brightness light emitting diode having a layer of distributed contacts
    9.
    发明授权
    High brightness light emitting diode having a layer of distributed contacts 有权
    具有分布接触层的高亮度发光二极管

    公开(公告)号：US06552367B1

    公开(公告)日：2003-04-22

    申请号：US09680416

    申请日：2000-10-06

    申请人： Min-Hsun Hsieh ,  Ming-Jiunn Jou ,  Biing-Jye Lee

    发明人： Min-Hsun Hsieh ,  Ming-Jiunn Jou ,  Biing-Jye Lee

    IPC分类号： H01L3300

    CPC分类号： H01L33/387 ,  H01L33/02 ,  H01L33/40 ,  H01L33/405

    摘要： A high brightness light emitting diode having a distributed contact area comprising a first electrode; a semiconductor substrate formed on the first electrode; a first cladding layer of a first conductivity type formed on the semiconductor substrate; an active layer formed on the first cladding layer; a second cladding layer of a second conductivity type formed on the active layer; a window layer of a second conductivity type formed on the second cladding layer; a distributed contact area in a predetermined pattern formed on the window layer; a transparent conductive layer formed over the distributed contact area and the window layer, the transparent conductive layer being in ohmic contact with the distributed contact area and a Shottky barrier being formed between the transparent conductive layer and the window layer; and a second electrode formed on the transparent conductive layer.

    摘要翻译： 一种具有分布式接触区域的高亮度发光二极管，包括第一电极; 形成在所述第一电极上的半导体衬底; 形成在半导体衬底上的第一导电类型的第一包层; 形成在所述第一包层上的有源层; 形成在有源层上的第二导电类型的第二覆层; 形成在第二包覆层上的第二导电类型的窗口层; 形成在窗口层上的预定图案的分布式接触区域; 形成在所述分布接触区域和所述窗口层上的透明导电层，所述透明导电层与所述分布接触区域欧姆接触，并且在所述透明导电层和所述窗口层之间形成肖特基势垒; 以及形成在所述透明导电层上的第二电极。