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公开(公告)号:US06936860B2
公开(公告)日:2005-08-30
申请号:US10063822
申请日:2002-05-16
申请人: Shu-Wen Sung , Chin-Fu Ku , Chia-Cheng Liu , Min-Hsun Hsieh , Chao-Nien Huang , Chen Ou , Chuan-Ming Chang
发明人: Shu-Wen Sung , Chin-Fu Ku , Chia-Cheng Liu , Min-Hsun Hsieh , Chao-Nien Huang , Chen Ou , Chuan-Ming Chang
CPC分类号: H01L33/04 , H01L33/14 , H01L33/325
摘要: An LED includes an insulating substrate; a buffer layer positioned on the insulating substrate; an n+-type contact layer positioned on the buffer layer, the contact layer having a first surface and a second surface; an n-type cladding layer positioned on the first surface of the n+-type contact layer; a light-emitting layer positioned on the n-type cladding layer; a p-type cladding layer positioned on the light-emitting layer; a p-type contact layer positioned on the p-type cladding layer; an n+-type reverse-tunneling layer positioned on the p-type contact layer; a p-type transparent ohmic contact electrode positioned on the n+-type reverse-tunneling layer; and an n-type transparent ohmic contact electrode positioned on the second surface of the n+-type contact layer. The p-type transparent ohmic contact electrode and the n-type transparent ohmic contact electrode are made of the same materials.
摘要翻译: LED包括绝缘基板; 位于所述绝缘基板上的缓冲层; 位于所述缓冲层上的n + + +型接触层,所述接触层具有第一表面和第二表面; 位于n +型接触层的第一表面上的n型覆层; 定位在n型包覆层上的发光层; 位于发光层上的p型覆层; 位于p型覆层上的p型接触层; 位于p型接触层上的n + H +型反向隧穿层; 位于n + +反向隧穿层上的p型透明欧姆接触电极; 以及位于n + +型接触层的第二表面上的n型透明欧姆接触电极。 p型透明欧姆接触电极和n型透明欧姆接触电极由相同的材料制成。
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公开(公告)号:US20070200493A1
公开(公告)日:2007-08-30
申请号:US11581439
申请日:2006-10-17
申请人: Tzu-Chieh Hsu , Ching-San Tao , Mei-Chun Liu , Mei-Lan Wu , Chen Ou , Min-Hsun Hsieh
发明人: Tzu-Chieh Hsu , Ching-San Tao , Mei-Chun Liu , Mei-Lan Wu , Chen Ou , Min-Hsun Hsieh
CPC分类号: H01L33/42 , H01L33/10 , H01L33/20 , H01L33/405
摘要: The light-emitting apparatus comprises a substrate, a first semiconductor layer formed on the substrate, a light-emitting layer formed on the first semiconductor layer, a second semiconductor layer formed on the light-emitting layer, a first transparent conductive oxide layer formed on the second semiconductor layer, a reflective metal layer form on the transparent conductive oxide layer, and a first electrode formed on the reflective metal layer; characterized in that the first transparent conductive oxide layer is formed with a plurality of cavities on the interface between the first transparent conductive oxide layer and the reflective metal layer for improving the adhesion strength therebetween.
摘要翻译: 发光装置包括基板,形成在基板上的第一半导体层,形成在第一半导体层上的发光层,形成在发光层上的第二半导体层,形成在第一半导体层上的第一透明导电氧化物层 所述第二半导体层,在所述透明导电氧化物层上形成反射金属层,以及形成在所述反射金属层上的第一电极; 其特征在于,所述第一透明导电氧化物层在所述第一透明导电氧化物层和所述反射金属层之间的界面上形成有多个空腔,以改善其间的粘合强度。
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公开(公告)号:US08405106B2
公开(公告)日:2013-03-26
申请号:US12753551
申请日:2010-04-02
申请人: Tzu-Chieh Hsu , Ching-San Tao , Chen Ou , Min-Hsun Hsieh , Chao-Hsing Chen
发明人: Tzu-Chieh Hsu , Ching-San Tao , Chen Ou , Min-Hsun Hsieh , Chao-Hsing Chen
IPC分类号: H01L33/00
CPC分类号: H01L33/20 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/42
摘要: A light-emitting device including: a light-emitting stacked layer having first conductivity type semiconductor layer, a light-emitting layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface; a first planarization layer formed on a first partial of the upper surface of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and a second partial of the second conductivity type semiconductor layer, including a first portion in contact with the first planarization layer and a second portion having a first plurality of cavities in contact with the second conductivity type semiconductor layer; and a first electrode formed on the first portion of the first transparent conductive oxide layer.
摘要翻译: 一种发光器件,包括:具有第一导电类型半导体层的发光层叠层,形成在第一导电型半导体层上的发光层和形成在发光层上的第二导电型半导体层,其中, 第二导电类型半导体层的上表面是纹理表面; 形成在所述第二导电型半导体层的上表面的第一部分上的第一平坦化层; 形成在所述第一平坦化层上的第一透明导电氧化物层和所述第二导电类型半导体层的第二部分,所述第二导电类型半导体层包括与所述第一平坦化层接触的第一部分和具有与所述第二平坦化层接触的第一多个空腔的第二部分 导电型半导体层; 以及形成在第一透明导电氧化物层的第一部分上的第一电极。
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公开(公告)号:US07095765B2
公开(公告)日:2006-08-22
申请号:US10249804
申请日:2003-05-09
申请人: Wen-Huang Liu , Po-Chun Liu , Min-Hsun Hsieh , Tzu-Feng Tseng , Chen Ou
发明人: Wen-Huang Liu , Po-Chun Liu , Min-Hsun Hsieh , Tzu-Feng Tseng , Chen Ou
CPC分类号: H01L27/15 , H01L25/167 , H01L2224/05568 , H01L2224/05573 , H01L2224/056 , H01L2224/14 , H01L2924/0002 , H01L2924/00 , H01L2924/00014
摘要: A light emitter includes an emitting stack, a first electrode, a second electrode and a voltage dependent resistor layer. The emitter stack has a first surface area and a second surface area. The first electrode is formed on the first surface area of the emitting stack. The second electrode is formed on the second surface area of the emitting stack. The voltage dependent resistor layer is connected to the first and second electrodes, and is formed during the formation of the light emitter thus improving the yield of the light emitter.
摘要翻译: 光发射器包括发射堆叠,第一电极,第二电极和电压依赖电阻层。 发射极堆叠具有第一表面区域和第二表面区域。 第一电极形成在发射堆叠的第一表面区域上。 第二电极形成在发射堆叠的第二表面区域上。 电压依赖电阻层连接到第一和第二电极,并且在形成发光体期间形成,从而提高发光体的产量。
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公开(公告)号:US20100213493A1
公开(公告)日:2010-08-26
申请号:US12753551
申请日:2010-04-02
申请人: Tzu-Chieh HSU , Ching-San Tao , Chen Ou , Min-Hsun Hsieh , Chao Hsing Chen
发明人: Tzu-Chieh HSU , Ching-San Tao , Chen Ou , Min-Hsun Hsieh , Chao Hsing Chen
CPC分类号: H01L33/20 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/42
摘要: A light-emitting device including: a light-emitting stacked layer having first conductivity type semiconductor layer, a light-emitting layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface; a first planarization layer formed on a first partial of the upper surface of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and a second partial of the second conductivity type semiconductor layer, including a first portion in contact with the first planarization layer and a second portion having a first plurality of cavities in contact with the second conductivity type semiconductor layer; and a first electrode formed on the first portion of the first transparent conductive oxide layer.
摘要翻译: 一种发光器件,包括:具有第一导电类型半导体层的发光层叠层,形成在第一导电型半导体层上的发光层和形成在发光层上的第二导电型半导体层,其中, 第二导电类型半导体层的上表面是纹理表面; 形成在所述第二导电型半导体层的上表面的第一部分上的第一平坦化层; 形成在所述第一平坦化层上的第一透明导电氧化物层和所述第二导电类型半导体层的第二部分,所述第二导电类型半导体层包括与所述第一平坦化层接触的第一部分和具有与所述第二平坦化层接触的第一多个空腔的第二部分 导电型半导体层; 以及形成在第一透明导电氧化物层的第一部分上的第一电极。
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公开(公告)号:US08714227B2
公开(公告)日:2014-05-06
申请号:US12842112
申请日:2010-07-23
申请人: Chen-Ke Hsu , Liang-Sheng Chi , Chun-Chang Chen , Win-Jim Su , Hsu-Cheng Lin , Mei-Ling Tsai , Yi Lung Liu , Chen Ou
发明人: Chen-Ke Hsu , Liang-Sheng Chi , Chun-Chang Chen , Win-Jim Su , Hsu-Cheng Lin , Mei-Ling Tsai , Yi Lung Liu , Chen Ou
IPC分类号: B32B38/10
CPC分类号: H01L22/20 , H01L21/67005 , H01L21/67132 , H01L21/67271 , Y10S156/93 , Y10S156/941 , Y10T156/1111 , Y10T156/1116 , Y10T156/1158 , Y10T156/1168 , Y10T156/1179 , Y10T156/1195 , Y10T156/1917 , Y10T156/1933 , Y10T156/1983
摘要: A chip sorting apparatus comprising a chip holder comprising a first surface and an second surface opposite to the first surface; a wafer comprising a first chip disposed on a first position of the first surface; a first chip receiver comprising a third surface and an fourth surface opposite to the third surface, wherein the third surface is opposite to the first surface; a pressurization device making the first chip and the third surface of the first chip receiver adhered to each other through pressuring the second surface at where corresponding to the first position; and a separator decreasing the adhesion between the first chip and the first surface.
摘要翻译: 一种芯片分选装置,包括:芯片保持器,其包括第一表面和与所述第一表面相对的第二表面; 晶片,其包括设置在所述第一表面的第一位置上的第一芯片; 第一芯片接收器,包括与第三表面相对的第三表面和第四表面,其中第三表面与第一表面相对; 使第一芯片的第一芯片和第三表面的加压装置通过在对应于第一位置的位置处对第二表面施加压力而彼此粘合; 以及减小第一芯片和第一表面之间的粘附性的隔板。
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公开(公告)号:US08536565B2
公开(公告)日:2013-09-17
申请号:US13046490
申请日:2011-03-11
申请人: Chen Ou , Wen-Hsiang Lin , Shih-Kuo Lai
发明人: Chen Ou , Wen-Hsiang Lin , Shih-Kuo Lai
IPC分类号: H01L33/00
CPC分类号: H01L21/0262 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L33/007 , H01L33/12
摘要: A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.
摘要翻译: 氮化物系发光器件包括基板和在该基板上形成的多个层,其顺序如下:由氮形成的基于氮化物的缓冲层,第一III族元素和任选的第二III族元素, 第一氮化物基半导体层,发光层和第二氮化物基半导体层。
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公开(公告)号:US08097897B2
公开(公告)日:2012-01-17
申请号:US12073284
申请日:2008-03-04
CPC分类号: H01L33/145 , H01L33/10 , H01L33/22
摘要: This invention provides a high-efficiency light-emitting device and the manufacturing method thereof. The high-efficiency light-emitting device includes a substrate; a reflective layer; a bonding layer; a first semiconductor layer; an active layer; and a second semiconductor layer formed on the active layer. The second semiconductor layer includes a first surface having a first lower region and a first higher region.
摘要翻译: 本发明提供一种高效率的发光装置及其制造方法。 高效率的发光装置包括:基板; 反射层; 接合层; 第一半导体层; 活性层 以及形成在所述有源层上的第二半导体层。 第二半导体层包括具有第一下部区域和第一较高区域的第一表面。
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9.
公开(公告)号:US20110241057A1
公开(公告)日:2011-10-06
申请号:US13161835
申请日:2011-06-16
申请人: Chien-Fu SHEN , Chao-Hsing Chen , Chien-Fu Huang , Shih-I Chen , Chiu-Lin Yao , Chia-Liang Hsu , Chen Ou
发明人: Chien-Fu SHEN , Chao-Hsing Chen , Chien-Fu Huang , Shih-I Chen , Chiu-Lin Yao , Chia-Liang Hsu , Chen Ou
摘要: A light-emitting device includes a substrate; a first semiconductor layer formed on the substrate; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a first pad formed on the second semiconductor layer, wherein the second semiconductor layer includes a plurality of voids between the active layer and the first pad.
摘要翻译: 发光装置包括:基板; 形成在所述基板上的第一半导体层; 形成在所述第一半导体层上的有源层; 形成在所述有源层上的第二半导体层; 以及形成在所述第二半导体层上的第一焊盘,其中所述第二半导体层在所述有源层和所述第一焊盘之间包括多个空隙。
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公开(公告)号:US20100200885A1
公开(公告)日:2010-08-12
申请号:US12703964
申请日:2010-02-11
申请人: Chen Ke HSU , Win Jim Su , Chia-Ming Chuang , Chen Ou
发明人: Chen Ke HSU , Win Jim Su , Chia-Ming Chuang , Chen Ou
IPC分类号: H01L33/00
CPC分类号: H01L33/22 , H01L33/0095 , H01L33/20
摘要: A light emitting device and a method of fabricating thereof are provided. The method of fabricating the light emitting device comprises: providing a substrate having a first major surface and a second major surface; forming a plurality of light-emitting stacks on the first major surface; forming an etching protection layer on each of the light emitting stacks; forming a plurality of holes by a discontinuous laser beam on the substrate; etching the plurality of holes; and slicing off the substrate along the plurality of holes to form a light emitting device. The light emitting device has a substrate wherein the sidewall of the substrate comprising a first area with a substantially flat surface and a second area with substantially textured surface.
摘要翻译: 提供一种发光器件及其制造方法。 制造发光器件的方法包括:提供具有第一主表面和第二主表面的衬底; 在所述第一主表面上形成多个发光堆叠; 在每个发光堆上形成蚀刻保护层; 通过基板上的不连续激光束形成多个孔; 蚀刻多个孔; 并且沿着所述多个孔切割所述基板以形成发光器件。 发光器件具有衬底,其中衬底的侧壁包括具有基本平坦表面的第一区域和具有基本纹理表面的第二区域。
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