摘要:
An optical scanning projection system includes a scanning light source component, a second reflecting element, a transparent element, a scanning element, a photosensitive element and a control module. The transparent element receives a main light beam emitted by the scanning light source component and reflects a part of the main light beam to be a reflected light. The reflected light is reflected by the second reflecting element, and the scanning element reflects the reflected light from the second reflecting element in a scanning manner. The photosensitive element receives the reflected light from the scanning element and outputs a sensing signal, and the control module actuates or stops actuating the scanning light source component according to the sensing signal. Therefore, when the scanning element is damaged, the control module may instantly stop actuating the scanning light source component, thereby enhancing the using safety of the optical scanning projection system.
摘要:
An optical scanning projection system includes a scanning light source component, a second reflecting element, a transparent element, a scanning element, a photosensitive element and a control module. The transparent element receives a main light beam emitted by the scanning light source component and reflects a part of the main light beam to be a reflected light. The reflected light is reflected by the second reflecting element, and the scanning element reflects the reflected light from the second reflecting element in a scanning manner. The photosensitive element receives the reflected light from the scanning element and outputs a sensing signal, and the control module actuates or stops actuating the scanning light source component according to the sensing signal. Therefore, when the scanning element is damaged, the control module may instantly stop actuating the scanning light source component, thereby enhancing the using safety of the optical scanning projection system.
摘要:
A method for projection correction includes following steps. An original image is projected as a projection image on an object. A projection-zone image including the projection image is captured from the object. A projection image outline corresponding to the projection image is obtained from the projection-zone image. An operation is performed on the projection image outline to obtain a horizontal inclination and a vertical inclination. The original image is pre-warped according to the horizontal inclination and the vertical inclination to obtain a corrected image, and the corrected image is projected on the object.
摘要:
A method for projection correction includes following steps. An original image is projected as a projection image on an object. A projection-zone image including the projection image is captured from the object. A projection image outline corresponding to the projection image is obtained from the projection-zone image. An operation is performed on the projection image outline to obtain a horizontal inclination and a vertical inclination. The original image is pre-warped according to the horizontal inclination and the vertical inclination to obtain a corrected image, and the corrected image is projected on the object.
摘要:
A newly developed algorithm and software can effectively and accurately predict the collisions for the accelerator, phantom, and patient setups, and can help physicians to choose the noncolliding and optimized beam sets efficiently via offering the ideal hits of planning target volume (PTV) and constraints of organ at risks (OARs).
摘要:
An all (111) MTJ stack is disclosed in which there are no transitions between different crystalline orientations when going from layer to layer. This is accomplished by providing strongly (111)-textured layers immediately below the MgO tunnel barrier to induce a (111) orientation therein.
摘要:
A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device; and a selector comprising a source-drain path serially coupled to the MTJ device. The method further includes applying an overdrive voltage to a gate of the selector to turn on the selector.
摘要:
A magnetic element in a spintronic device or serving as a propagation medium in a domain wall motion device is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction. The free layer may be a single layer or a composite and is comprised of a glassing agent that has a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. A CoFeB free layer selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region.
摘要:
An all (111) MTJ stack is disclosed in which there are no transitions between different crystalline orientations when going from layer to layer. This is accomplished by providing strongly (111)-textured layers immediately below the MgO tunnel barrier to induce a (111) orientation therein.
摘要:
A boron or boron containing dusting layer such as CoB or FeB is formed along one or both of top and bottom surfaces of a free layer at interfaces with a tunnel barrier layer and capping layer to improve thermal stability while maintaining other magnetic properties of a MTJ stack. Each dusting layer has a thickness from 0.2 to 20 Angstroms and may be used as deposited, or at temperatures up to 400° C. or higher, or following a subsequent anneal at 400° C. or higher. The free layer may be a single layer of CoFe, Co, CoFeB or CoFeNiB, or may include a non-magnetic insertion layer. The resulting MTJ is suitable for STT-MRAM memory elements or spintronic devices. Perpendicular magnetic anisotropy is maintained in the free layer at temperatures up to 400° C. or higher. Ku enhancement is achieved and the retention time of a memory cell for STT-MRAM designs is increased.