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6 条记录 (耗时 0.025 秒)

    Method of forming fine conductive lines, patterns and connectors
    4.
    发明授权
    Method of forming fine conductive lines, patterns and connectors 失效
    形成细导电线，图案和连接器的方法

    公开(公告)号：US4702792A

    公开(公告)日：1987-10-27

    申请号：US791862

    申请日：1985-10-28

    申请人： Ming-Fea Chow ,  William L. Guthrie ,  Frank B. Kaufman

    发明人： Ming-Fea Chow ,  William L. Guthrie ,  Frank B. Kaufman

    IPC分类号： H01L21/3205 ,  H01L21/304 ,  H01L21/306 ,  H01L21/60 ,  H01L21/768 ,  H05K3/46 ,  C23F1/00 ,  H05K3/26

    CPC分类号： H01L21/3212 ,  H01L21/7684 ,  H01L21/76885 ,  H05K3/4644

    摘要： The present invention discloses a method of forming fine conductive lines, patterns, and connectors, and is particularly useful in the formation of electronic devices. The method comprises a series of steps in which: a polymeric material is applied to a substrate; the polymeric material is patterned to form openings through, spaces within, or combinations thereof in the polymeric material; subsequently, conductive material is applied to the patterned polymeric material, so that it at least fills the openings and spaces existing in the polymeric material; and excess conductive material is removed from the exterior major surface of the polymeric material using chemical-mechanical polishing, to expose at least the exterior major surface of the polymeric material. The structure remaining has a planar exterior surface, wherein the conductive material filling the openings and spaces in the patterned polymeric material becomes features such as fine lines, patterns, and connectors which are surrounded by the polymeric material. The polymeric material may be left in place as an insulator or removed, leaving the conductive features on the substrate.

    摘要翻译： 本发明公开了一种形成细导电线，图案和连接器的方法，并且在电子器件的形成中特别有用。 该方法包括一系列步骤，其中：将聚合物材料施加到基底上; 将聚合物材料图案化以在聚合物材料中形成开口，其内部或其组合; 随后，将导电材料施加到图案化聚合物材料上，使得其至少填充聚合物材料中存在的开口和空间; 并且使用化学机械抛光从多孔材料的外主表面除去过量的导电材料，以至少露出聚合材料的外表面。 剩余的结构具有平坦的外表面，其中填充图案化聚合物材料中的开口和空间的导电材料变成由聚合材料包围的特征，例如细线，图案和连接器。 聚合物材料可以作为绝缘体留在原位或移除，留下基底上的导电特征。

    Thermally stable photoresists with high sensitivity
    5.
    发明授权
    Thermally stable photoresists with high sensitivity 失效
    热稳定的光致抗蚀剂具有高灵敏度

    公开(公告)号：US4939070A

    公开(公告)日：1990-07-03

    申请号：US215966

    申请日：1988-07-07

    申请人： William R. Brunsvold ,  Ming-Fea Chow ,  Willard E. Conley ,  Dale M. Crockatt ,  Jean M. J. Frechet ,  George J. Hefferon ,  Hiroshi Ito ,  Nancy E. Iwamoto ,  Carlton G. Willson

    发明人： William R. Brunsvold ,  Ming-Fea Chow ,  Willard E. Conley ,  Dale M. Crockatt ,  Jean M. J. Frechet ,  George J. Hefferon ,  Hiroshi Ito ,  Nancy E. Iwamoto ,  Carlton G. Willson

    IPC分类号： G03F7/039

    CPC分类号： G03F7/039 ,  Y10S430/143 ,  Y10S430/168

    摘要： The present invention discloses particular lithographic polymeric materials and methods of using these materials, wherein the polymeric materials have acid labile or photolabile groups pendant to the polymer backbone. The polymeric materials are sufficiently transparent to deep UV radiation to permit deep UV imaging, can be used to produce resist structures having thermal stability at temperatures greater than about 160.degree. C., and are sufficiently resistant to excessive crosslinking when heated to temperatures ranging from about 160.degree. C. to about 250.degree. C. that they remain soluble in common lithographic developers and strippers.The present invention also discloses resists comprising substituted polyvinyl benzoates which, after imaging, exhibit unexpectedly high thermal stability, in terms of plastic flow. These resists cannot be imaged using deep UV because they exhibit such a high degree of opacity below 280 nm; however, they are useful as the top, imaging layer in a bilayer resist process wherein the top layer acts as a mask during deep UV exposure of the bottom layer.

    摘要翻译： 本发明公开了特定的平版印刷聚合物材料和使用这些材料的方法，其中聚合物材料具有垂直于聚合物主链的酸不稳定性或光不稳定性基团。 聚合物材料对于深紫外线辐射具有足够的透明度以允许深紫外成像，可用于生产在大于约160℃的温度下具有热稳定性的抗蚀剂结构，并且当加热至约 160℃至约250℃，它们仍溶于普通的平版印刷显影剂和剥离剂。 本发明还公开了包含取代的聚乙烯基苯甲酸酯的抗蚀剂，其在成像之后，在塑性流动方面表现出意想不到的高热稳定性。 这些抗蚀剂不能使用深紫外成像，因为它们在280nm以下表现出如此高的不透明度; 然而，它们可用作双层抗蚀剂工艺中的顶部成像层，其中顶层在底层的深紫外线曝光期间用作掩模。

    Top imaged resists
    6.
    发明授权
    Top imaged resists 失效
    顶级成像抗皱剂

    公开(公告)号：US4810601A

    公开(公告)日：1989-03-07

    申请号：US880212

    申请日：1986-06-30

    申请人： Robert D. Allen ,  Kaolin N. Chiong ,  Ming-Fea Chow ,  Scott A. MacDonald ,  Jer-Ming Yang ,  Carlton G. Willson

    发明人： Robert D. Allen ,  Kaolin N. Chiong ,  Ming-Fea Chow ,  Scott A. MacDonald ,  Jer-Ming Yang ,  Carlton G. Willson

    IPC分类号： H01L21/027 ,  G03F7/038 ,  G03F7/20 ,  G03F7/26 ,  G03F7/38 ,  G03C3/00 ,  B05D3/06 ,  G03C5/00

    CPC分类号： G03F7/265 ,  G03F7/038 ,  G03F7/2022 ,  Y10S430/143 ,  Y10S430/167 ,  Y10S430/168

    摘要： The present invention is concerned with methods of converting a single resist layer into a multilayered resist.The upper portion of the single resist layer can be converted into a dry-etch resistant form. The conversion can be a blanket conversion of the upper portion of the resist layer or can be a patterned conversion of areas within the upper portion of the layer. A patternwise-converted resist can be oxygen plasma developed.The upper portion of the single resist layer can be patternwise converted into a chemically different composition or structure having altered absorptivity toward radiation. The difference in radiation absorptivity within the patterned upper portion of the resist enables subsequent use of blanket irradiation of the resist surface to create differences in chemical solubility between areas having the altered absorptivity toward radiation and non-altered areas. The difference in chemical solubility enables wet development of the patterned resist.

    摘要翻译： 本发明涉及将单个抗蚀剂层转化为多层抗蚀剂的方法。 单个抗蚀剂层的上部可以转化成耐干蚀刻形式。 该转换可以是抗蚀剂层的上部的覆盖转化，或者可以是层的上部内的区域的图案化转换。 图案转换的抗蚀剂可以是氧等离子体显影。 单个抗蚀剂层的上部可以被图案化地转换成具有改变的对辐射的吸收率的化学上不同的组成或结构。 在图案化的抗蚀剂上部中的辐射吸收率的差异使得随后可以使用抗蚀剂表面的毯式照射，从而在对辐射和未改变的区域具有改变的吸收率的区域之间产生化学溶解度的差异。 化学溶解度的差异使得图案化抗蚀剂的湿显影。