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37 条记录 (耗时 0.03 秒)

    Electroconductive cellulose-based film, a method of producing the same, an anti-reflection film, an optical element, and an image display
    3.
    发明授权
    Electroconductive cellulose-based film, a method of producing the same, an anti-reflection film, an optical element, and an image display 失效
    导电性纤维素类膜，其制造方法，抗反射膜，光学元件和图像显示器

    公开(公告)号：US07507436B2

    公开(公告)日：2009-03-24

    申请号：US10882453

    申请日：2004-07-01

    申请人： Shinya Nakano ,  Hiroyuki Takao ,  Masahiro Yoshioka

    发明人： Shinya Nakano ,  Hiroyuki Takao ,  Masahiro Yoshioka

    IPC分类号： B05D5/06

    CPC分类号： G02B1/111 ,  C08J7/047 ,  C08J2301/02 ,  C08J2483/00 ,  G02B1/105 ,  G02B1/14 ,  G02F1/133502 ,  Y10T428/28

    摘要： The present invention relates to a method of producing an electroconductive cellulose-based film having high uniformity and transparency and excellent in optical properties while preventing a bleaching phenomenon at the time of forming an electroconductive layer. The method of producing an electroconductive cellulose-based film according to the present invention is a method of producing an electroconductive cellulose-based film by coating a cellulose-based film with a coating solution containing a binder, superfine particles and a solvent to form an electroconductive layer thereon, wherein the coating solution comprises at least one kind of glycol monoalkyl ether-based solvent selected from the group consisting of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, and propylene glycol monoethyl ether in an amount of 20 to 40% by weight based on the total solvent, and a ketone-based solvent in an amount of 20 to 50% by weight based on the total solvent.

    摘要翻译： 本发明涉及一种在形成导电层时防止漂白现象的同时具有高均匀性和透明性以及优异的光学特性的导电性纤维素系膜的制造方法。 根据本发明的导电纤维素基膜的制造方法是通过用含有粘合剂，超细颗粒和溶剂的涂布溶液涂布纤维素基膜来生产导电纤维素基膜的方法，以形成导电纤维素基膜 其中所述涂布溶液包含选自乙二醇单甲基醚，乙二醇单乙醚，丙二醇单甲醚和丙二醇单乙醚中的至少一种二醇单烷基醚溶剂，其量为20 至40重量％，基于总溶剂的酮类溶剂的量为20〜50重量％。

    Electroconductive cellulose-based film, a method of producing the same, an anti-reflection film, an optical element, and an image display
    4.
    发明申请
    Electroconductive cellulose-based film, a method of producing the same, an anti-reflection film, an optical element, and an image display 失效
    导电性纤维素类膜，其制造方法，抗反射膜，光学元件和图像显示器

    公开(公告)号：US20050003081A1

    公开(公告)日：2005-01-06

    申请号：US10882453

    申请日：2004-07-01

    申请人： Shinya Nakano ,  Hiroyuki Takao ,  Masahiro Yoshioka

    发明人： Shinya Nakano ,  Hiroyuki Takao ,  Masahiro Yoshioka

    IPC分类号： B32B23/04 ,  B05B5/00 ,  C08J5/18 ,  C08J7/04 ,  C08K3/22 ,  C08L1/02 ,  G02B1/10 ,  G02B1/11 ,  G02F1/1335 ,  G03C1/85 ,  H01J29/18

    CPC分类号： G02B1/111 ,  C08J7/047 ,  C08J2301/02 ,  C08J2483/00 ,  G02B1/105 ,  G02B1/14 ,  G02F1/133502 ,  Y10T428/28

    摘要： The present invention relates to a method of producing an electroconductive cellulose-based film having high uniformity and transparency and excellent in optical properties while preventing a bleaching phenomenon at the time of forming an electroconductive layer. The method of producing an electroconductive cellulose-based film according to the present invention is a method of producing an electroconductive cellulose-based film by coating a cellulose-based film with a coating solution containing a binder, superfine particles and a solvent to form an electroconductive layer thereon, wherein the coating solution comprises at least one kind of glycol monoalkyl ether-based solvent selected from the group consisting of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, and propylene glycol monoethyl ether in an amount of 20 to 40% by weight based on the total solvent, and a ketone-based solvent in an amount of 20 to 50% by weight based on the total solvent.

    摘要翻译： 本发明涉及一种在形成导电层时防止漂白现象的同时具有高均匀性和透明性以及优异的光学特性的导电性纤维素系膜的制造方法。 根据本发明的导电纤维素基膜的制造方法是通过用含有粘合剂，超细颗粒和溶剂的涂布溶液涂布纤维素基膜来生产导电纤维素基膜的方法，以形成导电纤维素基膜 其中所述涂布溶液包含选自乙二醇单甲基醚，乙二醇单乙醚，丙二醇单甲醚和丙二醇单乙醚中的至少一种二醇单烷基醚溶剂，其量为20 至40重量％，基于总溶剂的酮类溶剂的量为20〜50重量％。

    Transparent conductive film and touch panel
    5.
    发明授权
    Transparent conductive film and touch panel 有权

    公开(公告)号：US09914810B2

    公开(公告)日：2018-03-13

    申请号：US13421931

    申请日：2012-03-16

    申请人： Hiroki Ozawa ,  Hiroyuki Takao ,  Minoru Kanatani ,  Wataru Nagatake

    发明人： Hiroki Ozawa ,  Hiroyuki Takao ,  Minoru Kanatani ,  Wataru Nagatake

    IPC分类号： B32B3/00 ,  B32B5/16 ,  B32B27/06 ,  C08J7/04

    CPC分类号： C08J7/045 ,  C08J7/047 ,  C08J2367/02 ,  C08J2433/00 ,  Y10T428/24405

    摘要： A transparent conductive film having a transparent polymer substrate and a transparent conductive layer on one main surface of the transparent polymer substrate. A cured resin layer with surface irregularities is formed: at least one of: between the transparent polymer substrate and the transparent conductive layer; and on the main surface opposite to the surface with the transparent conductive layer formed thereon of the transparent polymer substrate. The cured resin layer is preferably 1 μm or more and 3 μm or less in thickness and preferably contains a resin composition containing at least two components that undergo phase separation based on a difference in physical properties and 0.01 to 5 parts by weight of fine particles to 100 parts by weight of the solid content of the resin composition. The particle size of the fine particles is preferably 25 to 80% of the thickness of the cured resin layer.

    Process for producing high-resistance silicon wafers and process for producing epitaxial wafers and SOI wafers
    8.
    发明授权
    Process for producing high-resistance silicon wafers and process for producing epitaxial wafers and SOI wafers 有权
    用于生产高电阻硅晶片的方法和用于制造外延晶片和SOI晶片的工艺

    公开(公告)号：US07803228B2

    公开(公告)日：2010-09-28

    申请号：US10576321

    申请日：2004-08-02

    申请人： Kazunari Kurita ,  Shinsuke Sadamitsu ,  Hiroyuki Takao ,  Masataka Hourai

    发明人： Kazunari Kurita ,  Shinsuke Sadamitsu ,  Hiroyuki Takao ,  Masataka Hourai

    IPC分类号： C30B15/14

    CPC分类号： H01L21/324 ,  C30B29/06 ,  C30B33/02 ,  H01L21/322 ,  H01L21/76243

    摘要： By using oxygen-containing silicon wafers obtained by the CZ method and by combining the first heat treatment comprising controlled heat-up operation (ramping) with the second heat treatment comprising high-temperature heat treatment and medium temperature heat treatment in accordance with the process for producing high-resistance silicon wafers according to the present invention, it is possible to obtain high-resistance silicon wafers capable of maintaining their high resistance even after heat treatment in the process of device manufacture while efficiently inhibiting the formation of oxygen donors and preventing changes in resistivity. Further, excellent epitaxial wafers and SOI wafers can be produced using those high-resistance silicon wafers and, therefore, they can be applied in a wide field including high-frequency communication devices and analog/digital hybrid devices, among others.

    摘要翻译： 通过使用通过CZ方法获得的含氧硅晶片，并且通过将包括受控加热操作（斜面）的第一热处理与包括高温热处理和中温热处理的第二热处理组合， 制造根据本发明的高电阻硅晶片，可以获得能够在器件制造过程中即使在热处理之后也能够保持高电阻的高电阻硅晶片，同时有效地抑制氧供体的形成并防止 电阻率。 此外，可以使用这些高电阻硅晶片来制造优异的外延晶片和SOI晶片，因此可以应用于包括高频通信装置和模拟/数字混合装置等的广泛领域。

    OPTICAL FILM, POLARIZING PLATE, AND IMAGE DISPLAY APPARATUS
    9.
    发明申请
    OPTICAL FILM, POLARIZING PLATE, AND IMAGE DISPLAY APPARATUS 审中-公开
    光学膜，偏光板和图像显示装置

    公开(公告)号：US20100182690A1

    公开(公告)日：2010-07-22

    申请号：US12668285

    申请日：2008-05-20

    申请人： Hiroyuki Takao ,  Tsutomu Hani

    发明人： Hiroyuki Takao ,  Tsutomu Hani

    IPC分类号： G02B1/08 ,  C08K5/315 ,  C08K5/3472 ,  C08K5/3492

    CPC分类号： G02B5/223 ,  C08J5/18 ,  C08J2333/06 ,  G02B5/208 ,  G02B5/305

    摘要： Provided are an optical film which has excellent heat resistance and excellent optical transparency as well as an excellent UV-absorbing ability even in the wavelength range of 200 to 350 nm, and which is free of any defect in terms of its external appearance, a polarizing plate having a few external appearance defects and using the optical film, and an image display apparatus of high quality using the polarizing plate. The optical film of the present invention is obtained through extrusion molding of a molding material containing resin components containing a (meth)acrylic resin as a main component and 0.35 to 3.0 parts by weight of a cyanoacrylate-based UV absorber with respect to 100 parts by weight of the resin components.

    摘要翻译： 提供了一种光学膜，其具有优异的耐热性和优异的光学透明性，并且即使在200至350nm的波长范围内也具有优异的UV吸收能力，并且其在外观方面没有任何缺陷，偏光 具有少量外观缺陷并使用该光学膜的板以及使用该偏振片的高质量的图像显示装置。 本发明的光学膜是通过挤出成型含有（甲基）丙烯酸树脂作为主要成分的树脂成分和0.35〜3.0重量份的氰基丙烯酸酯系UV吸收剂的成型材料相对于100份的 重量的树脂组分。

    Process for producing high-resistance silicon wafers and process for producing epitaxial wafers and soi wafers (as amended)
    10.
    发明申请
    Process for producing high-resistance silicon wafers and process for producing epitaxial wafers and soi wafers (as amended) 有权
    用于生产高电阻硅晶片的方法和用于生产外延晶片和硅晶片的工艺（经修改）

    公开(公告)号：US20070066033A1

    公开(公告)日：2007-03-22

    申请号：US10576321

    申请日：2004-08-02

    申请人： Kazunari Kurita ,  Shinsuke Sadamitsu ,  Hiroyuki Takao ,  Masataka Hourai

    发明人： Kazunari Kurita ,  Shinsuke Sadamitsu ,  Hiroyuki Takao ,  Masataka Hourai

    IPC分类号： H01L21/322

    CPC分类号： H01L21/324 ,  C30B29/06 ,  C30B33/02 ,  H01L21/322 ,  H01L21/76243

    摘要： By using oxygen-containing silicon wafers obtained by the CZ method and by combining the first heat treatment comprising controlled heat-up operation (ramping) with the second heat treatment comprising high-temperature heat treatment and medium temperature heat treatment in accordance with the process for producing high-resistance silicon wafers according to the present invention, it is possible to obtain high-resistance silicon wafers capable of maintaining their high resistance even after heat treatment in the process of device manufacture while efficiently inhibiting the formation of oxygen donors and preventing changes in resistivity. Further, excellent epitaxial wafers and SOI wafers can be produced using those high-resistance silicon wafers and, therefore, they can be applied in a wide field including high-frequency communication devices and analog/digital hybrid devices, among others.

    摘要翻译： 通过使用通过CZ方法获得的含氧硅晶片，并且通过将包括受控加热操作（斜面）的第一热处理与包括高温热处理和中温热处理的第二热处理组合， 制造根据本发明的高电阻硅晶片，可以获得能够在器件制造过程中即使在热处理之后也能够保持高电阻的高电阻硅晶片，同时有效地抑制氧供体的形成并防止 电阻率。 此外，可以使用这些高电阻硅晶片来制造优异的外延晶片和SOI晶片，因此可以应用于包括高频通信装置和模拟/数字混合装置等的广泛领域。