公开(公告)号：US5332880A

公开(公告)日：1994-07-26

申请号：US40348

申请日：1993-03-30

申请人： Masafumi Kubota ,  Kenji Harafuji ,  Tokuhiko Tamaki ,  Mitsuhiro Ohkuni ,  Noboru Nomura ,  Ichiro Nakayama

发明人： Masafumi Kubota ,  Kenji Harafuji ,  Tokuhiko Tamaki ,  Mitsuhiro Ohkuni ,  Noboru Nomura ,  Ichiro Nakayama

IPC分类号： C23C16/509 ,  H01J37/32 ,  H05H1/46 ,  B23K9/00 ,  H01L21/306

CPC分类号： H01J37/32091 ,  C23C16/509 ,  H01J37/32165 ,  H01J37/32623 ,  H05H1/46 ,  Y10S977/724 ,  Y10S977/844

摘要： At lateral sides of a plasma generating part under a vacuum, first to fourth lateral electrodes are so disposed as to surround the plasma generating part. High frequency electric power is supplied to the first lateral electrode from a first high frequency power supply, high frequency electric power is supplied to the second lateral electrode from the first high frequency power supply through a first delay circuit, high frequency electric power is supplied to the third lateral electrode from the first high frequency power supply through the first delay circuit and through a second delay circuit, and high frequency electric power is supplied to the fourth lateral electrode from the first high frequency power supply through the first and second delay circuits and through a third delay circuit. Accordingly, there are respectively applied, to the first to fourth lateral electrodes, the high frequency electric powers of which frequencies are equal to one another and of which phases are successively different from one another, and there is excited, in the plasma generating part, a rotational electric field to cause electrons in the plasma generating part to present rotational motions.

摘要翻译： 在真空下的等离子体产生部分的侧面，第一至第四横向电极被设置成围绕等离子体产生部分。 从第一高频电源向第一横向电极提供高频电力，通过第一延迟电路从第一高频电源向第二横向电极提供高频电力，将高频电力供给至 来自第一高频电源的第三横向电极通过第一延迟电路和第二延迟电路，并且高频电力通过第一和第二延迟电路从第一高频电源提供给第四横向电极;以及 通过第三个延迟电路。 因此，分别向第一至第四横向电极施加频率彼此相等且相位相互不同的高频电力，并且在等离子体产生部分中激发， 使等离子体产生部中的电子产生旋转运动的旋转电场。

公开(公告)号：US5424905A

公开(公告)日：1995-06-13

申请号：US40297

申请日：1993-03-30

申请人： Noboru Nomura ,  Kenji Harafuji ,  Masafumi Kubota ,  Tokuhiko Tamaki ,  Mitsuhiro Ohkuni ,  Ichiro Nakayama

发明人： Noboru Nomura ,  Kenji Harafuji ,  Masafumi Kubota ,  Tokuhiko Tamaki ,  Mitsuhiro Ohkuni ,  Ichiro Nakayama

IPC分类号： H01J37/32 ,  H01J37/317

CPC分类号： H01J37/32302 ,  H01J37/32192 ,  H01J2237/3341

摘要： Three electrodes are disposed at lateral sides of a plasma generating chamber of an etching apparatus serving as a plasma generating apparatus. A sample stage is disposed at a lower part of the plasma generating chamber, and an opposite electrode is disposed at an upper part thereof. High frequency electric power having a first frequency is supplied to the sample stage and the opposite electrode. Respectively supplied to the three electrodes 4, 5, 6 are high frequency electric powers which are oscillated by a three-phase magnetron, which have a second frequency different from the first frequency and of which respective phases are successively different by about 120.degree. from one another, thus forming a rotational electric field in the plasma generating chamber.

摘要翻译： 在作为等离子体发生装置的蚀刻装置的等离子体发生室的侧面设置三个电极。 样品台设置在等离子体发生室的下部，相对电极设置在其上部。 具有第一频率的高频电力被提供给样品台和相对电极。 分别提供给三个电极4,5,6的是​​由三相磁控管振荡的高频电力，三相磁控管具有与第一频率不同的第二频率，并且各相相互相差约120度 从而在等离子体发生室中形成旋转电场。

公开(公告)号：US5404079A

公开(公告)日：1995-04-04

申请号：US97230

申请日：1993-07-27

申请人： Mitsuhiro Ohkuni ,  Masafumi Kubota ,  Noboru Nomura ,  Ichiro Nakayama ,  Tokuhiko Tamaki

发明人： Mitsuhiro Ohkuni ,  Masafumi Kubota ,  Noboru Nomura ,  Ichiro Nakayama ,  Tokuhiko Tamaki

IPC分类号： H01J37/32 ,  H01J7/24

CPC分类号： H01J37/32082 ,  H01J37/32165

摘要： On the inner surface of a chamber are circumferentially disposed three lateral electrodes at regular intervals. To the lateral electrodes are applied three high-frequency electric powers of 50 MHz, each differing in phase by approximately 120.degree.. On the bottom of the chamber is placed a sample stage serving as a second electrode, around which is provided a ring-shaped earth electrode. To the sample stage is applied high-frequency electric power of 13.56 MHz. The distance between each of the three lateral electrodes and the earth electrode is longer than the distance between the sample stage and the earth electrode.

摘要翻译： 在室的内表面上以规则的间隔周向设置三个横向电极。 向横向电极施加50MHz的三个高频电功率，每个相位相差大约120°。 在室的底部放置有用作第二电极的样品台，围绕其设置环形接地电极。 采样阶段采用13.56 MHz的高频电源。 三个横向电极和接地电极之间的距离比样品台和接地电极之间的距离长。

公开(公告)号：US5345145A

公开(公告)日：1994-09-06

申请号：US39911

申请日：1993-03-30

申请人： Kenji Harafuji ,  Mitsuhiro Ohkuni ,  Tokuhiko Tamaki ,  Masafumi Kubota ,  Noboru Nomura

发明人： Kenji Harafuji ,  Mitsuhiro Ohkuni ,  Tokuhiko Tamaki ,  Masafumi Kubota ,  Noboru Nomura

IPC分类号： H01J37/32 ,  H05H1/46 ,  H01J7/24

CPC分类号： H01J37/32623 ,  H01J37/32165 ,  H01J37/3266 ,  H05H1/46

摘要： A plasma generating method comprises: a first step of disposing a plurality of lateral electrodes at lateral sides of a plasma generating part in a vacuum chamber; a second step of respectively applying, to the lateral electrodes, high frequency electric powers of which frequencies are the same as one another and of which phases are different from one another, thereby to excite, in the plasma generating part, a high frequency rotating electric field to cause electrons under translational motions in the plasma generating part to present oscillating or rotating motions; and a third step of applying, to the plasma generating part, a magnetic field substantially at a right angle to the working plane of the high frequency rotating electric field, thereby to convert the translational movement of the electrons in the plasma generating part into revolving motions under oscillating or rotating motions by which the electrons revolve in the plasma generating part. The high frequency rotating electric field and the magnetic field cause the electrons in the plasma generating part to be confined therein.

摘要翻译： 一种等离子体产生方法包括：第一步骤，在真空室中的等离子体产生部分的侧面设置多个横向电极; 分别向横向电极施加频率彼此相同并且相位彼此不同的高频电力的第二步骤，从而在等离子体产生部分中激发高频旋转电力 场引起电子在等离子体产生部分中的平移运动以呈现振荡或旋转运动; 以及向所述等离子体产生部施加与所述高频旋转电场的工作面大致成直角的磁场的第3工序，将所述等离子体产生部中的电子的平移运动转换为旋转运动 电子在等离子体产生部分中旋转的摆动或旋转运动。 高频旋转电场和磁场使得等离子体产生部分中的电子被限制在其中。

公开(公告)号：US5436424A

公开(公告)日：1995-07-25

申请号：US80824

申请日：1993-06-24

申请人： Ichiro Nakayama ,  Noboru Nomura ,  Tokuhiko Tamaki ,  Mitsuhiro Okuni ,  Masafumi Kubota

发明人： Ichiro Nakayama ,  Noboru Nomura ,  Tokuhiko Tamaki ,  Mitsuhiro Okuni ,  Masafumi Kubota

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/46 ,  B23K10/00

CPC分类号： H01J37/32091 ,  H01J37/32165

摘要： A plasma generating apparatus includes a vacuum chamber having an insulated inner surface, more than two electrodes arranged on the insulated inner surface of the vacuum chamber, a high frequency applying device for applying high frequencies having different phases in order of positions of the electrodes, and a holder on which an object to be processed is placed. In the apparatus, a magnetic field is produced under plural alternating electric fields, so that electrons in a plasma generating portion are rotated to generate high density plasma under a high vacuum when the high frequencies are applied to the electrodes to generate the plasma and a specified process such as etching, CVD, or doping is carried on the object by reaction products generated at the portion.

摘要翻译： 一种等离子体发生装置，包括具有绝缘内表面的真空室，布置在真空室绝缘内表面上的多于两个电极的高频施加装置，用于按照电极位置的顺序施加具有不同相位的高频; 放置待处理物体的支架。 在该装置中，在多个交变电场下产生磁场，使得当将高频施加到电极以产生等离子体和指定的等离子体时，等离子体产生部分中的电子在高真空下旋转以产生高密度等离子体 通过在该部分产生的反应产物在物体上进行诸如蚀刻，CVD或掺杂的工艺。

公开(公告)号：US5753066A

公开(公告)日：1998-05-19

申请号：US712880

申请日：1996-09-12

申请人： Masafumi Kubota ,  Noboru Nomura ,  Tokuhiko Tamaki

发明人： Masafumi Kubota ,  Noboru Nomura ,  Tokuhiko Tamaki

IPC分类号： H01J37/32 ,  H05H1/00

CPC分类号： H01J37/32091 ,  H01J37/32155 ,  H01J37/32165

摘要： An apparatus for generating plasma is disclosed. The apparatus comprises: a plasma chamber; pairs of parallel plate electrodes; and a power supply for applying high-frequency powers on the pairs of electrodes. The frequencies of the high-frequency powers and the phase difference between the high-frequency powers are adjusted so as to cause each of electrons in the plasma to move in a circular path. A dense and highly uniform plasma is generated at a low pressure level, by utilizing the phenomenon of the oscillation, revolution or cycloidal motion of electrons in a high-frequency electric field formed between the parallel plate electrodes. This plasma is suitable for etching in the LSI fabrication process.

摘要翻译： 公开了一种用于产生等离子体的装置。 该装置包括：等离子体室; 成对平行板电极; 以及用于在所述电极对上施加高频功率的电源。 调整高频功率的频率和高频功率之间的相位差，使得等离子体中的每个电子以圆形路径移动。 通过利用形成在平行板电极之间的高频电场中的电子的振荡，旋转或摆线运动的现象，在低压水平下产生致密且高度均匀的等离子体。 该等离子体适用于LSI制造工艺中的蚀刻。

公开(公告)号：US5259922A

公开(公告)日：1993-11-09

申请号：US744583

申请日：1991-08-14

申请人： Atsuhiro Yamano ,  Tokuhiko Tamaki ,  Masafumi Kubota ,  Kenji Harafuji ,  Noboru Nomura

发明人： Atsuhiro Yamano ,  Tokuhiko Tamaki ,  Masafumi Kubota ,  Kenji Harafuji ,  Noboru Nomura

IPC分类号： H01L21/311 ,  H01L21/3213 ,  H01L21/00

CPC分类号： H01J37/32082 ,  H01L21/31116 ,  H01L21/32137

摘要： A dry etching method of a substrate or layer of a semiconductor or other material which includes the steps of providing a metallic chamber having an anode and a cathode which are spaced from each other and mounting the substrate or layer to be etched on the cathode, and applying a potential from a RF power supply to the cathode so that a plasma is generated between the anode and the cathode to produce a bulk region and sheath regions between the cathode and the anode. The frequency of the RF power supply is set at a level higher than 13.56 MHz under which the substrate or layer is subjected to etching with the ions. A polysilicon, SiN or Al alloy layer can be efficiently etched with a Cl-based etching gas.

摘要翻译： 一种半导体或其他材料的衬底或层的干蚀刻方法，其包括提供具有阳极和阴极的金属室，所述金属室彼此间隔开并将待蚀刻的衬底或层安装在阴极上，以及 将来自RF电源的电势施加到阴极，使得在阳极和阴极之间产生等离子体，以在阴极和阳极之间产生体积区域和鞘区域。 RF电源的频率设定在高于13.56MHz的水平，在该水平下，用离子对衬底或层进行蚀刻。 可以用Cl基蚀刻气体有效地蚀刻多晶硅，SiN或Al合金层。

公开(公告)号：US5593539A

公开(公告)日：1997-01-14

申请号：US224960

申请日：1994-04-08

申请人： Masafumi Kubota ,  Noboru Nomura ,  Tokuhiko Tamaki

发明人： Masafumi Kubota ,  Noboru Nomura ,  Tokuhiko Tamaki

IPC分类号： H01J37/32 ,  B44C1/22

CPC分类号： H01J37/32091 ,  H01J37/32155 ,  H01J37/32165

摘要： An apparatus for generating plasma is disclosed. The apparatus comprises: a plasma chamber; pairs of parallel plate electrodes; and a power supply for applying high-frequency powers on the pairs of electrodes. The frequencies of the high-frequency powers and the phase difference between the high-frequency powers are adjusted so as to cause each of electrons in the plasma to move in a circular path. A dense and highly uniform plasma is generated at a low pressure level, by utilizing the phenomenon of the oscillation, revolution or cycloidal motion of electrons in a high-frequency electric field formed between the parallel plate electrodes. This plasma is suitable for etching in the LSI fabrication process.

摘要翻译： 公开了一种用于产生等离子体的装置。 该装置包括：等离子体室; 成对平行板电极; 以及用于在所述电极对上施加高频功率的电源。 调整高频功率的频率和高频功率之间的相位差，使得等离子体中的每个电子以圆形路径移动。 通过利用形成在平行板电极之间的高频电场中的电子的振荡，旋转或摆线运动的现象，在低压水平下产生致密且高度均匀的等离子体。 该等离子体适用于LSI制造工艺中的蚀刻。

公开(公告)号：US5330606A

公开(公告)日：1994-07-19

申请号：US805864

申请日：1991-12-10

申请人： Masafumi Kubota ,  Noboru Nomura ,  Tokuhiko Tamaki

发明人： Masafumi Kubota ,  Noboru Nomura ,  Tokuhiko Tamaki

IPC分类号： H01J37/32 ,  H01L21/00

CPC分类号： H01J37/32091 ,  H01J37/32155 ,  H01J37/32165

摘要： An apparatus for generating plasma is disclosed. The apparatus comprises: a plasma chamber; pairs of parallel plate electrodes; and a power supply for applying high-frequency powers on the pairs of electrodes. The frequencies of the high-frequency powers and the phase difference between the high-frequency powers are adjusted so as to cause each of electrons in the plasma to move in a circular path. A dense and highly uniform plasma is generated at a low pressure level, by utilizing the phenomenon of the oscillation, revolution or cycloidal motion of electrons in a high-frequency electric field formed between the parallel plate electrodes. This plasma is suitable for etching in the LSI fabrication process.

摘要翻译： 公开了一种用于产生等离子体的装置。 该装置包括：等离子体室; 成对平行板电极; 以及用于在所述电极对上施加高频功率的电源。 调整高频功率的频率和高频功率之间的相位差，使得等离子体中的每个电子以圆形路径移动。 通过利用在平行板电极之间形成的高频电场中的电子的振荡，旋转或摆线运动的现象，在低压水平下产生致密且高度均匀的等离子体。 该等离子体适用于在LSI制造工艺中的蚀刻。

公开(公告)号：US4845048A

公开(公告)日：1989-07-04

申请号：US268604

申请日：1988-11-07

申请人： Tokuhiko Tamaki ,  Masafumi Kubota

发明人： Tokuhiko Tamaki ,  Masafumi Kubota

IPC分类号： H01L21/76 ,  H01L21/32 ,  H01L21/762

CPC分类号： H01L21/32 ,  H01L21/76264 ,  H01L21/76281 ,  Y10S148/043 ,  Y10S148/051 ,  Y10S148/117

摘要： A method of fabricating a semiconductor device which includes:(1) a step of forming an opening in a silicon substrate using a first silicon oxide film and a first silicon nitride film formed on the silicon substrate as masks,(2) a step of forming a second silicon oxide film and a second silicon nitride film on the side wall of the opening by the reduced pressure CVD method and anisotropic etching method,(3) a step of performing isotropic dry etching using the first and second silicon oxide films as masks, and(4) a step of performing heat treatment in an oxidizing atmosphere using the first and second silicon nitride films as masks.Thereby, uniform isotropic etching may be accomplished by use of the dry etching method.

摘要翻译： 一种制造半导体器件的方法，包括：（1）使用第一氧化硅膜和在硅衬底上形成的第一氮化硅膜作为掩模在硅衬底中形成开口的步骤，（2）形成步骤 通过减压CVD法和各向异性蚀刻法在开口侧壁上的第二氧化硅膜和第二氮化硅膜，（3）使用第一和第二氧化硅膜作为掩模进行各向同性干蚀刻的步骤， 和（4）使用第一和第二氮化硅膜作为掩模在氧化气氛中进行热处理的步骤。 因此，均匀的各向同性蚀刻可以通过使用干蚀刻方法来实现。