Thermal processing apparatus and thermal processing method

    公开(公告)号:US07038173B2

    公开(公告)日:2006-05-02

    申请号:US10357524

    申请日:2003-02-03

    IPC分类号: F27B5/14

    CPC分类号: H01L21/67115 C30B31/12

    摘要: A thermal processing apparatus, performing processing accompanied with heating on a substrate, having an upper lamp group directed toward a prescribed direction and a lower lamp group perpendicularly intersecting with the upper lamp group is provided with a lower reflector between the upper and lower lamp groups. The lower reflector is so provided as to reflect light from lamps, included in the lower lamp group, present on both end regions in relation to the direction of arrangement. Thus, the thermal processing apparatus can efficiently irradiate an auxiliary ring with reflected light from the lower lamp group and improve temperature uniformity when heating the substrate.

    Apparatus for heat-treating wafer by light-irradiation and device for
measuring temperature of substrate used in such apparatus
    2.
    发明授权
    Apparatus for heat-treating wafer by light-irradiation and device for measuring temperature of substrate used in such apparatus 失效
    用于通过光照射热处理晶片的装置和用于测量在这种装置中使用的基板的温度的装置

    公开(公告)号:US5315092A

    公开(公告)日:1994-05-24

    申请号:US774943

    申请日:1991-10-11

    CPC分类号: H01L21/67115

    摘要: A temperature measuring device for measuring the temperature of a wafer heated by light irradiation includes: a sheath thermocouple for detecting the temperature of a wafer to be measured by contacting the wafer to be measured; and a covering member for covering the surface of the sheath thermocouple. The surface of the covering member is flat in a predetermined region, and the part in the region can plane-contact the surface of the wafer. Thus, the temperature of the wafer can be measured accurately and in a stable manner, and the wafer surface is free from contamination with adhesives or the metal of the thermocouple.

    摘要翻译: 用于测量通过光照射加热的晶片的温度的温度测量装置包括:鞘热电偶,用于通过接触被测量的晶片来检测要测量的晶片的温度; 以及用于覆盖护套热电偶的表面的覆盖部件。 覆盖部件的表面在预定区域中是平坦的,并且该区域中的部分可以与晶片的表面平面接触。 因此,能够以稳定的方式精确地测量晶片的温度,并且晶片表面没有被粘合剂或热电偶的金属污染。

    Substrate processing device and substrate processing method

    公开(公告)号:US09601357B2

    公开(公告)日:2017-03-21

    申请号:US14383817

    申请日:2012-09-07

    摘要: A substrate processing apparatus and method includes, a plate that has a size equal to or larger than a principal face of the substrate, and has a horizontal and flat liquid holding face opposing the principal face of the substrate from below. A processing liquid supply unit supplies a processing liquid to the liquid holding face. A control unit controls the processing liquid supply unit and a movement unit to supply the processing liquid to the liquid holding face to form a processing liquid film, a contact step of bringing the principal face of the substrate and the liquid holding face close to each other to bring the principal face of the substrate into contact with the processing liquid film, and a liquid contact maintenance step of maintaining the processing liquid in contact with the principal face of the substrate.

    Thermal processing apparatus
    4.
    发明授权
    Thermal processing apparatus 有权
    热处理设备

    公开(公告)号:US06868302B2

    公开(公告)日:2005-03-15

    申请号:US10394895

    申请日:2003-03-21

    摘要: In a thermal processing apparatus irradiating a substrate with light from a lamp for heating the substrate, an opening is formed in a reflector for mounting a camera unit. The camera unit images three portions of an auxiliary ring supporting the substrate, for obtaining the position of the center of the auxiliary ring before the thermal processing apparatus receives the substrate therein. The camera unit further images the substrate for obtaining the position of the center of the substrate before the thermal processing apparatus receives the substrate therein and places the same on the auxiliary ring. The thermal processing apparatus moves the substrate so that the center thereof coincides with the center of the auxiliary ring, and thereafter places the former on the latter. Thus, the auxiliary ring can be so designed as to reduce overlaps of the auxiliary ring and the outer edge of the substrate while the overlaps can be rendered uniform over the entire circumference of the substrate for improving temperature uniformity of the substrate.

    摘要翻译: 在用于加热基板的灯的光照射基板的热处理装置中,在用于安装相机单元的反射器中形成开口。 照相机单元将支撑衬底的辅助环的三个部分成像,以在热处理装置接收衬底之前获得辅助环的中心的位置。 相机单元进一步对基板进行成像,以在热处理设备接收基板之前获得基板中心的位置,并将其放置在辅助环上。 热处理装置移动基板,使其中心与辅助环的中心一致,然后将其放置在其上。 因此,辅助环可以设计成减小辅助环和基板的外边缘的重叠,同时可以在基板的整个圆周上使重叠部分均匀,以改善基板的温度均匀性。

    Thermal processing apparatus and thermal processing method
    5.
    发明申请
    Thermal processing apparatus and thermal processing method 有权
    热处理设备和热处理方法

    公开(公告)号:US20050149222A1

    公开(公告)日:2005-07-07

    申请号:US11064755

    申请日:2005-02-01

    摘要: In a thermal processing apparatus irradiating a substrate with light from a lamp for heating the substrate, an opening is formed in a reflector for mounting a camera unit. The camera unit images three portions of an auxiliary ring supporting the substrate, for obtaining the position of the center of the auxiliary ring before the thermal processing apparatus receives the substrate therein. The camera unit further images the substrate for obtaining the position of the center of the substrate before the thermal processing apparatus receives the substrate therein and places the same on the auxiliary ring. The thermal processing apparatus moves the substrate so that the center thereof coincides with the center of the auxiliary ring, and thereafter places the former on the latter. Thus, the auxiliary ring can be so designed as to reduce overlaps of the auxiliary ring and the outer edge of the substrate while the overlaps can be rendered uniform over the entire circumference of the substrate for improving temperature uniformity of the substrate.

    摘要翻译: 在用于加热基板的灯的光照射基板的热处理装置中,在用于安装相机单元的反射器中形成开口。 照相机单元将支撑衬底的辅助环的三个部分成像,以在热处理装置接收衬底之前获得辅助环的中心的位置。 相机单元进一步对基板进行成像,以在热处理设备接收基板之前获得基板中心的位置,并将其放置在辅助环上。 热处理装置移动基板,使其中心与辅助环的中心一致,然后将其放置在其上。 因此,辅助环可以设计成减小辅助环和基板的外边缘的重叠,同时可以在基板的整个圆周上使重叠部分均匀,以改善基板的温度均匀性。

    SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
    6.
    发明申请
    SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD 有权
    基板处理装置和基板处理方法

    公开(公告)号:US20150090694A1

    公开(公告)日:2015-04-02

    申请号:US14383817

    申请日:2012-09-07

    IPC分类号: H01L21/67

    摘要: A substrate processing apparatus and method includes, a plate that has a size equal to or larger than a principal face of the substrate, and has a horizontal and flat liquid holding face opposing the principal face of the substrate from below. A processing liquid supply unit supplies a processing liquid to the liquid holding face. A control unit controls the processing liquid supply unit and a movement unit to supply the processing liquid to the liquid holding face to form a processing liquid film, a contact step of bringing the principal face of the substrate and the liquid holding face close to each other to bring the principal face of the substrate into contact with the processing liquid film, and a liquid contact maintenance step of maintaining the processing liquid in contact with the principal face of the substrate.

    摘要翻译: 基板处理装置和方法包括:具有等于或大于基板的主面的尺寸的板,并且具有从下方与基板的主面相对的水平和平坦的液体保持面。 处理液供给单元向液体保持面供给处理液。 控制单元控制处理液体供应单元和移动单元,以将处理液体供应到液体保持面以形成处理液膜;使基板的主面和液体保持面彼此靠近的接触步骤 以使基板的主面与处理液膜接触,以及液体接触维护步骤,其保持处理液体与基板的主面接触。

    Thermal processing apparatus and thermal processing method
    7.
    发明授权
    Thermal processing apparatus and thermal processing method 有权
    热处理设备和热处理方法

    公开(公告)号:US07371997B2

    公开(公告)日:2008-05-13

    申请号:US11064755

    申请日:2005-02-01

    IPC分类号: F27B5/14 A21B2/00

    摘要: In a thermal processing apparatus, using a lamp for heating a substrate, an opening is formed for a camera unit, which is used to image portions of an auxiliary ring supporting the substrate, to obtain the position of the center of the auxiliary ring. The camera further images the substrate to determine the center of the substrate before the thermal processing apparatus receives and places the substrate on the auxiliary ring. The thermal processing apparatus moves the substrate so that the center thereof coincides with the center of the auxiliary ring, and thereafter places the former on the latter. Thus, the auxiliary ring can be designed to reduce overlaps of the auxiliary ring and the outer edge of the substrate while overlaps can be uniform over the entire circumference of the substrate to improve temperature uniformity of the substrate.

    摘要翻译: 在热处理装置中,使用用于加热基板的灯,形成用于照相机单元的开口,用于对支撑基板的辅助环的部分进行成像,以获得辅助环的中心位置。 在热处理装置接收之前,照相机进一步对基板进行成像以确定基板的中心,并将基板放置在辅助环上。 热处理装置移动基板,使其中心与辅助环的中心一致,然后将其放置在其上。 因此,辅助环可以设计成减小辅助环和衬底的外边缘的重叠,同时在衬底的整个圆周上重叠可以是均匀的,以改善衬底的温度均匀性。

    Heat treatment apparatus
    8.
    发明授权
    Heat treatment apparatus 有权
    热处理设备

    公开(公告)号:US06518547B2

    公开(公告)日:2003-02-11

    申请号:US09788086

    申请日:2001-02-16

    IPC分类号: F27B514

    CPC分类号: H01L21/67115 H05B3/0047

    摘要: A substrate heat treatment apparatus irradiating a substrate such as a semiconductor wafer with light and performing heat treatment is provided. 19 lamps 82 are arranged on a plane in the form of a honeycomb to form a lamp group 81. The lamp group 81 has 6-fold rotation symmetry about a symmetry axis XR. A substrate W is rotated about a rotation axis XW in a plane parallel to that formed by the lamp group 81. The symmetry axis XR of the lamp group 81 and the rotation axis XW of the substrate W are displaced for relaxing peaks and bottoms of illuminance distribution on the substrate W resulting from regularity of arrangement of the lamp group 81. Consequently, fluctuation of radial illuminance distribution on the substrate W is reduced and improving uniformity is improved. When the uniformity of radial illuminance distribution on the substrate W is improved, temperature uniformity of the substrate W in heat treatment can be ensured.

    摘要翻译: 提供了用光照射诸如半导体晶片的基板并进行热处理的基板热处理设备。 19个灯82布置在蜂窝形式的平面上以形成灯组81.灯组81围绕对称轴XR具有6倍的旋转对称性。 基板W在与灯组81形成的平面平行的平面内绕旋转轴线XW旋转。灯组81的对称轴XR和基板W的旋转轴XW移位,以放宽照度的峰值和底部 由于灯组81的布置的规则性而导致的基板W上的分布。因此,基板W上的径向照度分布的波动减小,并且提高了均匀性。 当基板W上的径向照度分布的均匀性提高时,能够确保热处理时的基板W的温度均匀性。

    Apparatus for measuring the temperature of a substrate
    9.
    发明授权
    Apparatus for measuring the temperature of a substrate 失效
    用于测量衬底温度的装置

    公开(公告)号:US5539855A

    公开(公告)日:1996-07-23

    申请号:US197784

    申请日:1994-02-16

    CPC分类号: G01K1/16

    摘要: A substrate temperature measuring apparatus includes a temperature signal generating device provided in contact with a substrate for generating a signal indicating its own temperature which follows the temperature of the substrate by thermal conduction, a device connected and responsive to the output of the temperature signal generating device for determining whether contact between the substrate and the temperature signal generating device is appropriate or not, and a device for carrying out a predetermined process according to a determination result of the determining device. It is possible to apply heat treatment to the substrate, to prevent the substrate from being subjected to heat treatment, or to give a necessary alarm according to the determination result. Since the next substrate is at room temperature when it first comes into contact with the temperature signal generating device after heat treatment, the temperature signal generating device lowers its temperature rapidly in such a manner that reflects a state of contact between the substrate and the temperature signal generating device. Based on change of the output of the temperature signal generating device at this time, it is possible to detect an undesired state of contact between the substrate and the temperature signal generating device, and to prevent inaccurate measurement of the temperature of the substrate.

    摘要翻译: 基板温度测量装置包括:温度信号发生装置,与温度信号发生装置接触,用于通过热传导产生表示其本身温度跟随基板温度的信号;连接的装置,并响应温度信号发生装置的输出 用于确定基板和温度信号发生装置之间的接触是否适当;以及根据确定装置的确定结果执行预定处理的装置。 可以对基板进行热处理,以防止基板受到热处理,或者根据确定结果进行必要的报警。 由于下一个基板在热处理后首先与温度信号发生装置接触时处于室温,所以温度信号发生装置以反映基板和温度信号之间的接触状态的方式快速降低其温度 生成装置。 基于此时的温度信号发生装置的输出变化,可以检测基板和温度信号发生装置之间的不期望的接触状态,并且防止基板的温度的不准确的测量。