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    Ice protection system for aircraft
    5.
    发明授权
    Ice protection system for aircraft 有权
    飞机防冰系统

    公开(公告)号：US08251313B2

    公开(公告)日：2012-08-28

    申请号：US11256429

    申请日：2005-10-21

    申请人： Kenichi Goto

    发明人： Kenichi Goto

    IPC分类号： B64D15/00

    CPC分类号： B64D15/00 ,  B64D27/18

    摘要： The ice prevention system of the present invention utilizes, in combination, a de-ice subsystem and anti-ice subsystem in a new configuration on an aircraft with engines located behind its wings. Depending on the vertical location of the engines with respect to the wings, the anti-ice subsystem is configured on an upper or lower portion of a leading edge of the wings. If the engine is located above the wing, the anti-ice system is configured only on a section of the wing aligned with the engine and only on the upper portion of the leading edge. If the engine is located below the wing, the placement of anti-ice system is reversed. The de-ice subsystem is configured on the opposite portion of the leading edge adjacent to the anti-ice subsystem and on the remainder of the leading edge of the wing.

    摘要翻译： 本发明的防冰系统组合地使用飞机上的新配置的除冰子系统和防冰子系统，其具有位于其翼后面的发动机。 取决于发动机相对于机翼的垂直位置，防冰子系统配置在翼的前缘的上部或下部。 如果发动机位于机翼上方，则防冰系统仅配置在与发动机对准的机翼的一部分上，并且仅在前缘的上部配置。 如果发动机位于机翼下方，则防冰系统的布置相反。 除冰子系统配置在与防冰子系统相邻的前缘的相对部分上，以及机翼前缘的其余部分。

    FUEL CELL SYSTEM AND METHOD FOR CONTROLLING SAME
    6.
    发明申请
    FUEL CELL SYSTEM AND METHOD FOR CONTROLLING SAME 有权
    燃料电池系统及其控制方法

    公开(公告)号：US20110274998A1

    公开(公告)日：2011-11-10

    申请号：US13129986

    申请日：2009-11-16

    申请人： Yasushi Ichikawa ,  Keigo Ikezoe ,  Kenichi Goto ,  Ken Nakayama ,  Mitsunori Kumada ,  Yousuke Tomita

    发明人： Yasushi Ichikawa ,  Keigo Ikezoe ,  Kenichi Goto ,  Ken Nakayama ,  Mitsunori Kumada ,  Yousuke Tomita

    IPC分类号： H01M8/04

    CPC分类号： H01M8/04104 ,  H01M8/04179 ,  H01M8/04365 ,  H01M8/04388 ,  H01M8/04395 ,  H01M8/04753 ,  H01M2008/1095

    摘要： A fuel cell system 100 includes: a fuel cell 1 for generating a power by causing an electrochemical reaction between an oxidant gas supplied to an oxidant electrode 34 and a fuel gas supplied to a fuel electrode 67; a fuel gas supplier HS for supplying the fuel gas to the fuel electrode 67; and a controller 40 for controlling the fuel gas supplier HS to thereby supply the fuel gas to the fuel electrode 67, the controller 40 being configured to implement a pressure change when an outlet of the fuel electrode 67 side is closed, wherein based on a first pressure change pattern for implementing the pressure change at a first pressure width API, the controller 40 periodically changes a pressure of the fuel gas at the fuel electrode 67.

    摘要翻译： 燃料电池系统100包括：燃料电池1，用于通过供给到氧化剂电极34的氧化剂气体和供给到燃料电极67的燃料气体之间的电化学反应产生电力; 用于向燃料电极67供应燃料气体的燃料气体供应器HS; 以及控制器40，用于控制燃料供应商HS，从而将燃料气体供应到燃料电极67，控制器40构造成当燃料电极67侧的出口关闭时实现压力变化，其中基于第一 用于在第一压力宽度API处实施压力变化的压力变化模式，控制器40周期性地改变燃料电极67处的燃料气体的压力。

    FUEL CELL SYSTEM
    8.
    发明申请
    FUEL CELL SYSTEM 有权
    燃油电池系统

    公开(公告)号：US20090035613A1

    公开(公告)日：2009-02-05

    申请号：US12160269

    申请日：2007-01-11

    申请人： Hayato Chikugo ,  Kenichi Goto

    发明人： Hayato Chikugo ,  Kenichi Goto

    IPC分类号： H01M8/00

    CPC分类号： H01M8/249 ,  H01M8/04007 ,  H01M8/04029 ,  H01M8/04358 ,  H01M8/04417 ,  H01M8/04552 ,  H01M8/04559 ,  H01M8/04723 ,  H01M8/04731 ,  H01M8/04768

    摘要： The present invention provides a fuel cell system having means for controlling the flow of coolant within a fuel cell system. A desirable rate of flow of coolant is created, during power generation, by determining the difference in temperature between coolant flowing into individual cell sets of the fuel cell assembly and the temperature of coolant exhausted from the cell assembly. The fuel cell system features controls adapted to evaluate the heat generation state of each fuel cell set and to regulate the temperature of cell sets by controlling the rate circulation of the coolant.

    摘要翻译： 本发明提供一种具有用于控制燃料电池系统内的冷却剂流动的装置的燃料电池系统。 在发电期间，通过确定流入燃料电池组件的单个电池组的冷却剂的温度与从电池组件排出的冷却剂的温度之间的差异，产生冷却剂的期望流速。 燃料电池系统具有适于评估每个燃料电池组的发热状态的控制，并且通过控制冷却剂的速率循环来调节电池组的温度。

    Method of manufacturing CMOS semiconductor device
    9.
    发明授权
    Method of manufacturing CMOS semiconductor device 有权
    制造CMOS半导体器件的方法

    公开(公告)号：US06881653B2

    公开(公告)日：2005-04-19

    申请号：US10740430

    申请日：2003-12-22

    申请人： Manabu Kojima ,  Kenichi Goto ,  Hiroshi Morioka ,  Kenichi Okabe

    发明人： Manabu Kojima ,  Kenichi Goto ,  Hiroshi Morioka ,  Kenichi Okabe

    IPC分类号： H01L21/28 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/423 ,  H01L29/49 ,  H01L21/20

    CPC分类号： H01L21/823842

    摘要： A method of manufacturing a CMOS semiconductor device able to reduce the effective thickness of the gate insulating film and able to secure stable performance is provided. The method in one embodiment comprises the steps of: forming a polycrystalline silicon film on a gate insulating film; introducing an n-type impurity into the polycrystalline silicon film in an nMOS formation region before gate processing of the polycrystalline silicon film; performing heat treatment so that the impurity diffuses in the polycrystalline silicon film and is activated; and patterning the polycrystalline silicon to form a gate pattern before introducing an impurity into the polycrystalline silicon film at a pMOS formation region.

    摘要翻译： 提供了能够降低栅极绝缘膜的有效厚度并能够确保稳定性能的CMOS半导体器件的制造方法。 一个实施例中的方法包括以下步骤：在栅极绝缘膜上形成多晶硅膜; 在多晶硅膜的栅极处理之前，在nMOS形成区域中将n型杂质引入到多晶硅膜中; 进行热处理，使得杂质在多晶硅膜中扩散并被活化; 以及在pMOS形成区域向多晶硅膜中引入杂质之前，形成多晶硅以形成栅极图案。

    Semiconductor memory with floating gate type FET
    10.
    发明授权
    Semiconductor memory with floating gate type FET 有权
    具有浮栅型FET的半导体存储器

    公开(公告)号：US06815759B2

    公开(公告)日：2004-11-09

    申请号：US09726386

    申请日：2000-12-01

    申请人： Naoto Horiguchi ,  Tatsuya Usuki ,  Kenichi Goto

    发明人： Naoto Horiguchi ,  Tatsuya Usuki ,  Kenichi Goto

    IPC分类号： H01L29788

    CPC分类号： H01L29/66825 ,  G11C16/0416 ,  H01L21/28273 ,  H01L29/42324 ,  H01L29/7883

    摘要： A tunneling insulating film is formed on the partial surface area of a semiconductor substrate. A floating gate electrode is formed on the tunneling insulating film. A gate insulating film covers the side wall of the floating gate electrode and a partial surface area of the semiconductor substrate on both sides of the floating gate electrode. A first control gate electrode is disposed on the gate insulating film over the side wall of the floating gate electrode and over a partial surface area of the semiconductor substrate on both sides of the floating gate electrode. A pair of impurity doped regions is formed in a surface layer of the semiconductor substrate on both sides of a gate structure including the floating gate structure and first control gate structure.