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10 条记录 (耗时 0.017 秒)

    Amorphous silicon semiconductor solar cell
    1.
    发明授权
    Amorphous silicon semiconductor solar cell 失效
    非晶硅半导体太阳能电池

    公开(公告)号：US4738729A

    公开(公告)日：1988-04-19

    申请号：US6869

    申请日：1987-01-27

    申请人： Toshihiko Yoshida ,  Mitsuo Matsumura ,  Hideo Yamamoto ,  Kunio Asai ,  Osamu Nakamura ,  Yoshinobu Okayasu

    发明人： Toshihiko Yoshida ,  Mitsuo Matsumura ,  Hideo Yamamoto ,  Kunio Asai ,  Osamu Nakamura ,  Yoshinobu Okayasu

    IPC分类号： H01L31/0376 ,  H01L31/075 ,  H01L31/20 ,  H01L31/06

    CPC分类号： H01L31/202 ,  H01L31/03762 ,  H01L31/075 ,  Y02E10/548 ,  Y02P70/521

    摘要： This invention disclose an amorphous silicon semiconductor film containing at least hydrogen, carbon and oxygen as impurities and the method to produce it. The film is characterized in that the total quantity of carbon and oxygen in said film is at least 0.1 atom %. Since the film has small light absorption coefficient and its optical refractive index is controllable, an excellent window material for solar cell can be provided. Since adherence of the film with a metal electrode as well as with a transparent electrode is sufficient, good reproducibility in making solar cells using the film of this invention as a window material was realized.

    摘要翻译： 本发明公开了至少含有氢，碳和氧作为杂质的非晶硅半导体膜及其制造方法。 该膜的特征在于，所述膜中的碳和氧的总量为至少0.1原子％。 由于膜具有小的光吸收系数并且其光学折射率可控，因此可以提供用于太阳能电池的优良窗材料。 由于具有金属电极以及透明电极的膜的附着是足够的，所以实现了使用本发明的膜作为窗口材料制造太阳能电池的重现性良好。

    Method of sythesizing carbon film and carbon particles in a vapor phase
    2.
    发明授权
    Method of sythesizing carbon film and carbon particles in a vapor phase 失效
    气相中碳膜和碳颗粒的交联方法

    公开(公告)号：US4873115A

    公开(公告)日：1989-10-10

    申请号：US765573

    申请日：1985-08-14

    申请人： Mitsuo Matsumura ,  Toshihiko Yoshida

    发明人： Mitsuo Matsumura ,  Toshihiko Yoshida

    IPC分类号： C01B31/02 ,  C01B31/06 ,  C23C16/26 ,  C23C16/27 ,  C30B25/02 ,  C30B29/04

    CPC分类号： C23C16/272 ,  C23C16/277

    摘要： A vapor phase synthesis of carbon film and carbon particles using a single or a mixed gas capable of supplying halogen, hydrogen and carbon atoms is disclosed. Halogen radicals can suppress the desorption of carbon atoms from the substrate, and the carbon layer is obtained easily. Especially chlorine and fluorine atoms are effective. An electron beam diffraction pattern illustrated that diamond film can be obtained in this method.

    摘要翻译： 公开了使用能够提供卤素，氢和碳原子的单一或混合气体的碳膜和碳颗粒的气相合成。 卤素基团可以抑制碳原子从底物的解吸，并且容易地获得碳层。 特别是氯和氟原子是有效的。 电子束衍射图可以用该方法获得金刚石膜。

    Amorphous silicon semiconductor film and production process thereof
    3.
    发明授权
    Amorphous silicon semiconductor film and production process thereof 失效
    非晶硅半导体膜及其制备方法

    公开(公告)号：US4726851A

    公开(公告)日：1988-02-23

    申请号：US948420

    申请日：1986-12-30

    申请人： Mitsuo Matsumura ,  Toshihiko Yoshida

    发明人： Mitsuo Matsumura ,  Toshihiko Yoshida

    IPC分类号： H01L31/0376 ,  H01L31/075 ,  H01L31/20 ,  H01L31/06 ,  H01L31/18

    CPC分类号： H01L31/202 ,  H01L31/03762 ,  H01L31/075 ,  Y02E10/548 ,  Y02P70/521

    摘要： This invention discloses an amorphous silicon semiconductor film comprising at least hydrogen, nitrogen, and oxygen as impurities and the method of producing it. The film is characterized in that the total quantity of nitrogen and oxygen in said film is at least 1 atom %. Since the film has a small light absorption coefficient and its optical refractive index is controllable, an excellent window material for solar cell can be provided. As adherence of the film with a metal electrode as well as with a transparent electrode is sufficient, good reproducibility in making solar cells using the film of this invention as window material was realized.

    摘要翻译： 本发明公开了至少包含氢，氮和氧作为杂质的非晶硅半导体膜及其制造方法。 该膜的特征在于，所述膜中的氮和氧的总量为至少1原子％。 由于膜具有小的光吸收系数并且其光学折射率可控，因此可以提供用于太阳能电池的极好的窗口材料。 由于具有金属电极以及透明电极的膜的附着是足够的，因此实现了使用本发明的膜作为窗口材料制造太阳能电池的良好的再现性。

    Quart crucible with large diameter for pulling single crystal and method of producing the same
    7.
    发明授权
    Quart crucible with large diameter for pulling single crystal and method of producing the same 有权
    大直径拉拔单晶的art坩埚及其制造方法

    公开(公告)号：US6136092A

    公开(公告)日：2000-10-24

    申请号：US377103

    申请日：1999-08-19

    申请人： Tatsuhiro Sato ,  Shigeo Mizuno ,  Mitsuo Matsumura ,  Hiroyuki Watanabe

    发明人： Tatsuhiro Sato ,  Shigeo Mizuno ,  Mitsuo Matsumura ,  Hiroyuki Watanabe

    IPC分类号： C03B20/00 ,  C03B19/09 ,  C30B15/10 ,  C30B29/06 ,  C30B35/00 ,  C30B23/00

    CPC分类号： C30B15/10 ,  C03B19/095 ,  C30B35/002 ,  Y10T428/1317

    摘要： A crucible with 22 inches or more in inner diameter, which has a small deformation of the body under exposure to abundant heat radiation during pulling a single crystal, and which has no practical problem, and a method of producing the same are disclosed. The method comprises the steps of: feeding first silicon dioxide powder along an inner surface of a rotating mold having a gas permeable wall to form a piled up layer of the first silicon dioxide powder; heating the piled up layer from the inside space of the mold to have the first silicon dioxide powder molten to provide the opaque outer layer as a substrate, while vacuum suction is effected through the wall; generating a high temperature gas atmosphere in an inside space of the substrate during or after the formation of the opaque outer layer; feeding second silicon dioxide powder into the high temperature gas atmosphere to have the second silicon dioxide powder molten at least partly; and directing the second silicon dioxide powder in an at least partly molten form toward an inner surface of the substrate to have the second silicon dioxide powder deposited on the inner surface of the substrate to thereby form the transparent inner layer thereon, the transparent inner layer being of a predetermined thickness and substantially free of bubbles.

    摘要翻译： 一种内径为22英寸或更大的坩埚，其在牵引单晶时在暴露于大量热辐射的同时具有较小的变形，并且没有实际的问题，并且公开了其制造方法。 该方法包括以下步骤：沿着具有透气壁的旋转模具的内表面供给第一二氧化硅粉末以形成第一二氧化硅粉末的堆积层; 从模具的内部空间加热堆叠层以使第一二氧化硅粉末熔融，以提供不透明外层作为基底，同时通过壁进行真空吸力; 在形成不透明外层期间或之后在基板的内部空间中产生高温气体气氛; 将第二二氧化硅粉末进料到高温气体气氛中以使第二二氧化硅粉末至少部分熔融; 并且将所述第二二氧化硅粉末以至少部分熔融的形式引导到所述基板的内表面，以使所述第二二氧化硅粉末沉积在所述基板的内表面上，从而在其上形成所述透明内层，所述透明内层为 具有预定厚度并且基本上没有气泡。

    Quartz crucible with large diameter for pulling single crystal and method of producing the same
    8.
    发明授权
    Quartz crucible with large diameter for pulling single crystal and method of producing the same 有权
    用于拉单晶的大直径石英坩埚及其制造方法

    公开(公告)号：US5989021A

    公开(公告)日：1999-11-23

    申请号：US153066

    申请日：1998-09-15

    申请人： Tatsuhiro Sato ,  Shigeo Mizuno ,  Mitsuo Matsumura ,  Hiroyuki Watanabe

    发明人： Tatsuhiro Sato ,  Shigeo Mizuno ,  Mitsuo Matsumura ,  Hiroyuki Watanabe

    IPC分类号： C03B20/00 ,  C03B19/09 ,  C30B15/10 ,  C30B29/06 ,  C30B35/00 ,  F27B14/10

    CPC分类号： C30B15/10 ,  C03B19/095 ,  C30B35/002 ,  Y10T428/1317

    摘要： A large diameter quartz crucible with an inner diameter of 22 inches or more comprises an opaque silica glass outer layer having bubbles of 10 .mu.m to 250 .mu.m in diameter and 5 mm to 20 mm in thickness and a transparent silica glass inner layer having 0.5% or less in a bubble content and 0.3 mm or more in thickness which is molten and integrated with an inner surface of the outer layer. The outer layer has an OH group concentration of 80 ppm or less and the gas pressure in a bubble in the outer layer is lower than atmospheric pressure so that a volume expansion ratio of the bubble is minimized when being heated in condition of pulling a single crystal.

    摘要翻译： 内径为22英寸以上的大直径石英坩埚包括直径为10μm〜250μm，厚度为5mm〜20mm的不透明石英玻璃外层，透明石英玻璃内层为0.5 气泡含量的％以下，和熔融并与外层的内表面一体化的厚度为0.3mm以上。 外层的OH基浓度为80ppm以下，外层的气泡中的气体压力低于大气压，使得在拉拔单晶时加热时气泡的体积膨胀比最小化 。

    Silicon thin film and method of producing the same
    9.
    发明授权
    Silicon thin film and method of producing the same 失效
    硅薄膜及其制造方法

    公开(公告)号：US5017308A

    公开(公告)日：1991-05-21

    申请号：US377985

    申请日：1989-07-11

    申请人： Shigeru Iijima ,  Kazunobu Tanaka ,  Akihisa Matsuda ,  Mitsuo Matsumura ,  Hideo Yamamoto

    发明人： Shigeru Iijima ,  Kazunobu Tanaka ,  Akihisa Matsuda ,  Mitsuo Matsumura ,  Hideo Yamamoto

    IPC分类号： C01B33/02 ,  C23C16/24 ,  H01L21/205 ,  H01L29/04 ,  H01L29/167 ,  H01L31/04 ,  H01L31/20

    CPC分类号： H01L29/04 ,  C23C16/24 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/0262 ,  H01L29/167 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521 ,  Y10T428/12528

    摘要： A silicon thin film is composed of primarily silicon atoms, 0 to 8 atm % hydrogen, at least one element selected from the group including fluorine, chlorine, bromine and iodine, and an impurity element, wherein about 80 to 100% of microcrystalline grains are interspersed in an amorphous phase. The thin film is produced by deposition on a substrate in a plasma atmosphere using as a raw material gas silane (SiH.sub.4) or halogenated silane (SiH.sub.o--3 X.sub.4--1) wherein X represents a halogen or a combination of two or more halogens, and a dopant gas mixed with the raw material gas. The method comprises the steps of: (1) diluting the mixed gas with hydrogen in a ratio of the diluting gas to the raw material gas of from 50:1 to 100:1, to control the film deposition rate to produce a layer including mixed crystalline and amorphous substances; and (2) applying an electric power to provide a plasma discharge power density of from 0.1 to about 0.5 W/cm.sup.2, at a reaction pressure of 5 to 10 torr.

    摘要翻译： 硅薄膜主要由0〜8atm％的氢原子，至少一种选自氟，氯，溴和碘的元素和杂质元素组成，其中约80〜100％的微晶粒为 散布在非晶相中。 通过使用其中X表示卤素或两种或更多种卤素的组合的原料气体硅烷（SiH 4）或卤代硅烷（SiHo-3X4-1）在等离子体气氛中在基板上沉积而制造薄膜， 掺杂气体与原料气体混合。 该方法包括以下步骤：（1）将稀释气体与原料气体的比例用氢气稀释为50:1至100:1，以控制膜沉积速率以产生包括混合物 结晶和无定形物质; 和（2）施加电力以提供0.1至约0.5W / cm 2的等离子体放电功率密度，反应压力为5至10托。