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    Optical semiconductor device housing package
    1.
    发明授权
    Optical semiconductor device housing package 失效
    光学半导体器件外壳封装

    公开(公告)号：US6036375A

    公开(公告)日：2000-03-14

    申请号：US923928

    申请日：1997-07-24

    申请人： Mitsuo Yanagisawa ,  Kenichi Ura ,  Satoru Tomie

    发明人： Mitsuo Yanagisawa ,  Kenichi Ura ,  Satoru Tomie

    IPC分类号： G02B6/42 ,  G02B6/36

    CPC分类号： G02B6/4248 ,  G02B6/4204

    摘要： The invention relates to an optical semiconductor device housing package comprising a base having a mounting portion on an upper surface of which an optical semiconductor device is mounted; a frame attached to the base so as to encircle the mounting portion, the frame having a through-hole in one side thereof; a cylindrically shaped fixing member into which an optical fiber is inserted, the cylindrically shaped fixing member being fixed to the through-hole of the frame; a light-transmitting member attached to one end portion of the fixing member; and a lid member mounted on an upper face of the frame, for hermetically sealing the optical semiconductor device, wherein the light-transmitting member is formed of amorphous glass.

    摘要翻译： 本发明涉及一种光学半导体器件壳体封装，其包括：基座，其上表面上具有安装光学半导体器件的安装部分; 框架，其安装在所述基座上以围绕所述安装部分，所述框架在其一侧具有通孔; 圆柱形的固定构件，其中插入光纤，所述圆柱形固定构件固定到所述框架的通孔; 安装在所述固定构件的一个端部的透光构件; 以及盖构件，其安装在所述框架的上表面上，用于气密地密封所述光学半导体器件，其中所述透光构件由非晶玻璃形成。

    High-frequency input/output feedthrough and package for housing a high-frequency semiconductor element
    3.
    发明授权
    High-frequency input/output feedthrough and package for housing a high-frequency semiconductor element 有权
    用于高频半导体元件的高频输入/输出馈通和封装

    公开(公告)号：US06369324B1

    公开(公告)日：2002-04-09

    申请号：US09140791

    申请日：1998-08-27

    申请人： Satoru Tomie

    发明人： Satoru Tomie

    IPC分类号： H02G308

    CPC分类号： H01L23/66 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/15192 ,  H01L2924/16195 ,  H01L2924/3011 ,  H01P1/047 ,  H01L2924/00

    摘要： In a conventional high-frequency input/output feedthrough having a microstrip line, for a millimeter wave band, the reliability of a hermetic seal portion was low and transmission characteristics in the millimeter wave band were not preferable. A high-frequency input/output feedthrough of the present invention includes: a dielectric substrate with a ground conductor on a bottom face thereof; a wall member joined onto the top face of the dielectric substrate; a pair of line conductors formed in line with each other on both sides of the wall member on the top face of the dielectric substrate; an inside-layer line conductor which is formed to be in line and parallel with the pair of line conductors below the wall member inside the dielectric substrate, both ends of which are electrically connected by through conductors, to respective end portions of the pair of line conductors on both sides of the wall member, wherein an interval of the through conductors are set to be a quarter of a wavelength of a high-frequency signal to be used. The high-frequency input/output feedthrough is characterized by a hermetic seal portion of high reliability and preferable transmission characteristics.

    摘要翻译： 在具有微带线的常规高频输入/输出馈通中，对于毫米波段，气密密封部分的可靠性低，并且毫米波段中的透射特性不是优选的。 本发明的高频输入/输出馈通包括：在其底面上具有接地导体的电介质基片; 连接到电介质基板的顶面上的壁部件; 在电介质基板的上表面上的壁构件的两侧彼此成直线形成的一对线导体; 内层线路导体，其形成为与电介质基板内部的壁构件下面的一对线路导体线对齐并且其两端通过导体电连接到该对线路的相应端部 导体在壁构件的两侧，其中贯通导体的间隔被设定为要使用的高频信号的波长的四分之一。 高频输入/输出馈通的特征在于具有高可靠性和优选的传输特性的气密密封部分。

    High-frequency input/output feedthrough and package for housing high-frequency semiconductor element using same
    6.
    发明授权
    High-frequency input/output feedthrough and package for housing high-frequency semiconductor element using same 有权
    高频输入/输出馈通和封装用于使用相同的高频半导体元件

    公开(公告)号：US06365961B1

    公开(公告)日：2002-04-02

    申请号：US09484917

    申请日：2000-01-18

    申请人： Satoru Tomie

    发明人： Satoru Tomie

    IPC分类号： H01L2334

    CPC分类号： H01L23/66 ,  H01L24/48 ,  H01L2223/6627 ,  H01L2224/45014 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/16195 ,  H01L2924/1903 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2224/85399

    摘要： A high-frequency input/output feedthrough comprises a lower dielectric substrate in which are formed a bottom face ground layer, side ground layers, a line conductor and cofacial ground layers (formed on both sides of the line conductor on one and the same face of the lower dielectric substrate); and an upper dielectric substrate joined to the lower dielectric substrate so that portions of the line conductor and cofacial ground layers are sandwiched between the lower and upper dielectric substrate. In order to suppress return and insertion losses of signal in millimeter wave range due to a difference in transmission mode to improve transmission characteristics, the upper dielectric substrate is made thicker than the lower dielectric substrate. The width of the portion of the line conductor which is sandwiched between the lower dielectric substrate and the upper dielectric substrate is smaller than that of another portion. The cofacial ground layers are projected toward the line conductor. The transmission modes for high-frequency signals are matched, so that the return and insertion losses can be reduced and excellent transmission characteristics of high-frequency signals can be attained.

    摘要翻译： 高频输入/输出馈通包括下电介质基底，其中形成底面接地层，侧接地层，线导体和面接地层（在同一面上的线导体的两侧形成 下介电基片）; 以及连接到下电介质基板的上电介质基板，使得线导体和共面接地层的一部分夹在下电介质基板和上电介质基板之间。 为了抑制由于传输模式的差异而导致的毫米波范围内的信号的返回和插入损耗，以提高传输特性，使上介质衬底比下介电衬底厚。 被夹在下介电衬底和上电介质衬底之间的线路导体的部分的宽度小于另一部分的宽度。 面接地层朝向线路导体投射。 高频信号的传输模式相匹配，可以降低返回和插入损耗，并且可以获得优异的高频信号传输特性。

    High-frequency input/output feedthrough and package for housing high-frequency semiconductor element using same
    7.
    发明授权
    High-frequency input/output feedthrough and package for housing high-frequency semiconductor element using same 失效
    高频输入/输出馈通和封装用于使用相同的高频半导体元件

    公开(公告)号：US6043556A

    公开(公告)日：2000-03-28

    申请号：US31402

    申请日：1998-02-26

    申请人： Satoru Tomie

    发明人： Satoru Tomie

    IPC分类号： H01R33/76 ,  H01L23/02 ,  H01L23/06 ,  H01L23/12 ,  H01L23/66 ,  H01P3/08 ,  H01P5/08 ,  H01L29/40

    CPC分类号： H01L23/66 ,  H01L2223/6627 ,  H01L2224/45014 ,  H01L2224/48091 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/16195 ,  H01L2924/1903 ,  H01L2924/3011 ,  H01L2924/3025

    摘要： A high-frequency input/output terminal comprises a lower dielectric substrate in which are formed a bottom face ground layer, side ground layers, a line conductor and cofacial ground layers (formed on both sides of the line conductor on one and the same face of the lower dielectric substrate); and an upper dielectric substrate joined to the lower dielectric substrate so that portions of the line conductor and cofacial ground layers are sandwiched between the lower and upper dielectric substrate. In order to suppress return and insertion losses of signal in millimeter wave range due to a difference in transmission mode to improve transmission characteristics, the upper dielectric substrate is made thicker than the lower dielectric substrate. The width of the portion of the line conductor which is sandwiched between the lower dielectric substrate and the upper dielectric substrate is smaller than that of another portion. The cofacial ground layers are projected toward the line conductor. The transmission modes for high-frequency signals are made even, so that the return and insertion losses can be reduced and excellent transmission characteristics of high-frequency signals can be attained.

    摘要翻译： 高频输入/输出端子包括下电介质基底，其中形成底面接地层，侧接地层，线导体和面接地层（在同一面上的线导体的两侧形成 下介电基片）; 以及连接到下电介质基板的上电介质基板，使得线导体和共面接地层的一部分夹在下电介质基板和上电介质基板之间。 为了抑制由于传输模式的差异而导致的毫米波范围内的信号的返回和插入损耗，以提高传输特性，使上介质衬底比下介电衬底厚。 被夹在下介电衬底和上电介质衬底之间的线路导体的部分的宽度小于另一部分的宽度。 面接地层朝向线路导体投射。 高频信号的传输模式均匀，从而可以降低返回和插入损耗，并且可以实现高频信号的良好传输特性。