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    Method for manufacturing surface acoustic wave device
    2.
    发明申请
    Method for manufacturing surface acoustic wave device 有权
    声表面波装置的制造方法

    公开(公告)号：US20060220500A1

    公开(公告)日：2006-10-05

    申请号：US11445586

    申请日：2006-06-01

    申请人： Mitsutaka Shimada ,  Yoshifumi Yamagata ,  Kazuhiro Otsuka ,  Masafumi Hisataka ,  Akira Oikawa ,  Michihiko Kuwahata ,  Masaru Yamano

    发明人： Mitsutaka Shimada ,  Yoshifumi Yamagata ,  Kazuhiro Otsuka ,  Masafumi Hisataka ,  Akira Oikawa ,  Michihiko Kuwahata ,  Masaru Yamano

    IPC分类号： H03H9/25

    CPC分类号： H03H9/1085 ,  G01H3/12 ,  H01L21/561 ,  H01L23/3135 ,  H01L23/315 ,  H01L24/81 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73203 ,  H01L2224/81801 ,  H01L2924/09701 ,  H03H3/08 ,  H03H9/059 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  H01L2924/00012

    摘要： A surface acoustic wave device is disclosed, which comprises a surface acoustic wave element including a lithium tantalate piezoelectric substrate 10 with one principal surface thereof formed with an IDT electrode 11, a connector electrode 12 and a periphery sealing electrode 13, and a base substrate 2 formed with an electrode 21 for connection to the element connected to the connector electrode 12 through a solder bump component 3 and a periphery sealing conductor film 22 joined to the periphery sealing electrode 13 thorough a solder sealing component 4. For the solder bump component 3 and the solder sealing component 4, a Sn—Sb based or Sn—Ag based lead-free solder containing 90% or more Sn is used, and the thermal expansion coefficient of the base substrate 2 is set in the range of 9-20 pm/° C. The joining is accomplished with high stability resisting thermal stress due to a difference in thermal expansion coefficient, so that a surface acoustic wave device that can maintain stable connection for a long duration of time can be provided.

    摘要翻译： 公开了一种弹性表面波器件，它包括一个表面声波元件，它包括其一个主表面形成有IDT电极11的钽酸锂压电基片10，一个连接器电极12和一个周边密封电极13，以及一个基底基片2 形成有用于通过焊料凸块部件3连接到连接到连接器电极12的元件的电极21和通过焊料密封部件4接合到周围密封电极13的周围密封导体膜22。 对于焊料凸块部件3和焊料密封部件4，使用含有90％以上Sn的Sn-Sb系或Sn-Ag系无铅焊料，将基底基板2的热膨胀系数设定在 范围为9-20μm/℃。由于热膨胀系数的差异，能够以高稳定性抵抗热应力实现接合，从而可以提供能够长时间保持稳定连接的表面声波装置 。

    Method for manufacturing surface acoustic wave device
    3.
    发明授权
    Method for manufacturing surface acoustic wave device 有权
    声表面波装置的制造方法

    公开(公告)号：US07513022B2

    公开(公告)日：2009-04-07

    申请号：US11445586

    申请日：2006-06-01

    申请人： Mitsutaka Shimada ,  Yoshifumi Yamagata ,  Kazuhiro Otsuka ,  Masafumi Hisataka ,  Akira Oikawa ,  Michihiko Kuwahata ,  Masaru Yamano

    发明人： Mitsutaka Shimada ,  Yoshifumi Yamagata ,  Kazuhiro Otsuka ,  Masafumi Hisataka ,  Akira Oikawa ,  Michihiko Kuwahata ,  Masaru Yamano

    IPC分类号： H04R17/00

    CPC分类号： H03H9/1085 ,  G01H3/12 ,  H01L21/561 ,  H01L23/3135 ,  H01L23/315 ,  H01L24/81 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73203 ,  H01L2224/81801 ,  H01L2924/09701 ,  H03H3/08 ,  H03H9/059 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  H01L2924/00012

    摘要： A surface acoustic wave device is disclosed, which comprises a surface acoustic wave element including a lithium tantalate piezoelectric substrate 10 with one principal surface thereof formed with an IDT electrode 11, a connector electrode 12 and a periphery sealing electrode 13, and a base substrate 2 formed with an electrode 21 for connection to the element connected to the connector electrode 12 through a solder bump component 3 and a periphery sealing conductor film 22 joined to the periphery sealing electrode 13 thorough a solder sealing component 4. For the solder bump component 3 and the solder sealing component 4, a Sn—Sb based or Sn—Ag based lead-free solder containing 90% or more Sn is used, and the thermal expansion coefficient of the base substrate 2 is set in the range of 9-20 pm/° C. The joining is accomplished with high stability resisting thermal stress due to a difference in thermal expansion coefficient, so that a surface acoustic wave device that can maintain stable connection for a long duration of time can be provided.

    摘要翻译： 公开了一种弹性表面波器件，它包括一个表面声波元件，它包括其一个主表面形成有IDT电极11的钽酸锂压电基片10，一个连接器电极12和一个周边密封电极13，以及一个基底基片2 形成有用于通过焊料凸块部件3连接到连接到连接器电极12的元件的电极21和通过焊接密封部件4接合到周围密封电极13的周围密封导体膜22.对于焊料凸块部件3和 使用焊料密封部件4，含有Sn含量为90％以上的Sn-Sb系或Sn-Ag系无铅焊料，将基底基板2的热膨胀系数设定在9〜20μm/ ℃。由于热膨胀系数的差异，接合实现了高稳定性，抗热应力，从而可以保持稳定的表面声波装置 可以提供长时间的连接。

    Silane-modified cationized polymeric compound and process for production thereof
    4.
    发明授权
    Silane-modified cationized polymeric compound and process for production thereof 有权
    硅烷改性阳离子化聚合物及其制备方法

    公开(公告)号：US08981080B2

    公开(公告)日：2015-03-17

    申请号：US13320787

    申请日：2010-05-18

    申请人： Takeshi Yamada ,  Youichirou Kohno ,  Yoko Osako ,  Yoshifumi Yamagata

    发明人： Takeshi Yamada ,  Youichirou Kohno ,  Yoko Osako ,  Yoshifumi Yamagata

    IPC分类号： C08B15/06 ,  D21C3/00 ,  D21C3/22 ,  C08B15/00

    CPC分类号： C08B15/06

    摘要： A process for producing a silane-modified cationized polymeric compound, the process including the steps of: (1) cationizing a water-soluble polymeric compound in a mixed solvent of a water-miscible organic solvent and water in the presence of an alkali to produce a slurry containing a cationized polymeric compound, (2) adding an aminosilane compound to the slurry or a cake produced therefrom, thereby treating the cationized polymeric compound with the aminosilane compound, (3) optionally adding an acid to the slurry obtained in step (1) or a product obtained in step (2), and (4) drying a product obtained in step (2) or a product obtained by performing step (3) after step (2), wherein the drying step (4) includes a primary drying treatment step of performing drying at a temperature of 50 to 140° C. under a degree of vacuum of 4.0 to 53.3 kPa, and a secondary drying treatment step of drying the product obtained following the primary drying treatment at a temperature of 90 to 155° C. The process enables a silane-modified cationized polymeric compound having excellent water dispersibility to be produced with good efficiency.

    摘要翻译： 一种制备硅烷改性阳离子化聚合物的方法，该方法包括以下步骤：（1）在碱存在下，将水溶性有机溶剂与水的混合溶剂中的水溶性高分子化合物阳离子化以产生 含有阳离子化聚合物的浆料，（2）向浆料中添加氨基硅烷化合物或由其制备的饼，由此用氨基硅烷化合物处理阳离子化聚合物，（3）任选地向步骤（1）中获得的浆料中加入酸 ）或步骤（2）中获得的产物，和（4）在步骤（2）之后干燥步骤（2）中获得的产物或通过步骤（3）获得的产物，其中干燥步骤（4） 干燥处理步骤，在真空度为4.0〜53.3kPa的条件下，在50〜140℃的温度下进行干燥，二次干燥处理工序在90〜155℃的温度下进行一次干燥处理后得到的产物 ℃ 该方法能够以高效率生产具有优异的水分散性的硅烷改性阳离子化聚合物。

    Surface acoustic wave element, surface acoustic wave apparatus, and communication apparatus
    7.
    发明授权
    Surface acoustic wave element, surface acoustic wave apparatus, and communication apparatus 有权
    声表面波元件，声表面波装置和通信装置

    公开(公告)号：US08004370B2

    公开(公告)日：2011-08-23

    申请号：US12242736

    申请日：2008-09-30

    申请人： Yoshifumi Yamagata

    发明人： Yoshifumi Yamagata

    IPC分类号： H03H9/64 ,  H03H9/72 ,  H03H3/08

    CPC分类号： H03H9/725 ,  H03H9/02944 ,  H03H9/6483

    摘要： The invention provides a surface acoustic wave element having improved heat dissipation and power durability. These characteristics are achieved by configuring the SAW such that either of an input or ground electrode is disposed between serial arm portions of the SAW comprising resonators.

    摘要翻译： 本发明提供了具有改善的散热和功率耐久性的表面声波元件。 这些特性通过配置SAW来实现，使得输入或接地电极中的任一个设置在包括谐振器的SAW的串联臂部之间。

    Surface acoustic wave device, surface acoustic wave apparatus, and communications equipment
    8.
    发明授权
    Surface acoustic wave device, surface acoustic wave apparatus, and communications equipment 有权
    表面声波装置，表面声波装置和通信设备

    公开(公告)号：US07609129B2

    公开(公告)日：2009-10-27

    申请号：US11190515

    申请日：2005-07-27

    申请人： Yuuko Yokota ,  Yoshifumi Yamagata ,  Kiyohiro Iioka

    发明人： Yuuko Yokota ,  Yoshifumi Yamagata ,  Kiyohiro Iioka

    IPC分类号： H03H9/72 ,  H03H9/05 ,  H03H9/64

    CPC分类号： H03H9/1085 ,  H01L2224/16225 ,  H03H9/02574 ,  H03H9/02614 ,  H03H9/02952 ,  H03H9/02984 ,  H03H9/0576 ,  H03H9/059 ,  H03H9/1092 ,  H03H9/72 ,  H03H9/725

    摘要： A second substrate 21 composed of a material having a lower dielectric constant than that of a piezoelectric substrate 2 having a transmission-side filter region 12 and a receiving-side filter region 13 formed therein is joined to the other main surface of the piezoelectric substrate 2, and a conductor layer 22 is formed throughout the other main surface of the second substrate 21. The effective dielectric constant of the substrate is reduced, thereby making it possible to reduce a parasitic capacitance formed between an input electrode section 5 in the transmission-side filter region 12 and an output electrode section 6 in the receiving-side filter region 13 and to improve isolation characteristics.

    摘要翻译： 由具有比具有形成在其中的透射侧滤光区12和接收侧滤光区13的压电基片2的介电常数低的材料构成的第二基片21与压电基片2的另一个主表面 并且在第二基板21的另一个主表面上形成导体层22.基板的有效介电常数降低，从而可以减小在发送侧的输入电极部5之间形成的寄生电容 滤波器区域12和输出电极部分6，并提高隔离特性。

    Electronic device
    10.
    发明授权
    Electronic device 有权
    电子设备

    公开(公告)号：US08587389B2

    公开(公告)日：2013-11-19

    申请号：US12675110

    申请日：2008-08-29

    申请人： Wataru Koga ,  Yuuko Yokota ,  Motoki Itou ,  Yoshifumi Yamagata

    发明人： Wataru Koga ,  Yuuko Yokota ,  Motoki Itou ,  Yoshifumi Yamagata

    IPC分类号： H03H9/00 ,  H01L41/00

    CPC分类号： H03H9/725 ,  H03H9/0576

    摘要： The branching filter has the piezoelectric substrate having the main surface on which there are formed a transmission filter, which includes an input electrode and an antenna electrode, and a reception filter, which includes an output electrodes and the antenna electrode. The branching filter also has the mounting substrate having, on a first main surface, a first electrode group that is connected to the transmission filter and reception filter and that is formed symmetrical with respect to a line when viewed from the above, and also having, on a second main surface locating on the opposite side to the first main surface, a second electrode group that is connected to the circuit interconnects of an external circuit board and that is formed symmetrical with respect to a line when viewed from the above.

    摘要翻译： 分路滤波器具有主表面的压电基板，其上形成有包括输入电极和天线电极的透射滤光器，以及包括输出电极和天线电极的接收滤波器。 分支滤波器还具有安装基板，其在第一主表面上具有连接到透射滤光器和接收滤光器的第一电极组，并且当从上方观察时相对于线对称地形成， 在位于与第一主表面相反一侧的第二主表面上的第二电极组，连接到外部电路板的电路互连件并且当从上面观察时相对于线形成对称的第二电极组。