公开(公告)号：US5701223A

公开(公告)日：1997-12-23

申请号：US697396

申请日：1996-08-23

申请人： Robert Edward Fontana, Jr. ,  Bruce Alvin Gurney ,  Tsann Lin ,  Virgil Simon Speriosu ,  Ching Hwa Tsang ,  Dennis Richard Wilhoit

发明人： Robert Edward Fontana, Jr. ,  Bruce Alvin Gurney ,  Tsann Lin ,  Virgil Simon Speriosu ,  Ching Hwa Tsang ,  Dennis Richard Wilhoit

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/32 ,  H01L43/10

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  H01F10/3272 ,  H01L43/10 ,  G11B2005/3996

摘要： A spin valve magnetoresistive (SVMR) sensor uses a laminated antiparallel (AP) pinned layer in combination with an improved antiferromagnetic (AF) exchange biasing layer. The pinned layer comprises two ferromagnetic films separated by a nonmagnetic coupling film such that the magnetizations of the two ferromagnetic films are strongly coupled together antiferromagnetically in an antiparallel orientation. This laminated AP pinned layer is magnetically rigid in the small field excitations required to rotate the SVMR sensor's free layer. When the magnetic moments of the two ferromagnetic layers in this AP pinned layer are nearly the same, the net magnetic moment of the pinned layer is small. However, the exchange field is correspondingly large because it is inversely proportional to the net magnetic moment. The laminated AP pinned layer has its magnetization fixed or pinned by an AF material that is highly corrosion resistant but that has an exchange anisotropy too low to be usable in conventional SVMR sensors. In the preferred embodiment the AF layer is nickel-oxide and is formed on one of the magnetoresistive (MR) shields that serves as the substrate. Thus the AF material also serves as the insulating MR gap material. The location of the AF layer and the laminated AP-pinned layer to which it is exchange coupled on the bottom of the SVMR sensor allows for improved longitudinal biasing of the free layer when the SVMR sensor is fabricated.

摘要翻译： 自旋阀磁阻（SVMR）传感器使用层叠反平行（AP）钉扎层与改进的反铁磁（AF）交换偏置层组合。 被钉扎层包括由非磁性耦合膜分离的两个铁磁膜，使得两个铁磁膜的磁化强烈耦合在反铁磁反向反平行取向。 该层压AP钉扎层在旋转SVMR传感器自由层所需的小场激励中是磁性刚性的。 当该AP钉扎层中的两个铁磁层的磁矩几乎相同时，被钉扎层的净磁矩小。 然而，交换场相当大，因为它与净磁矩成反比。 层压的AP钉扎层的磁化固定或由AF材料固定，该材料具有高度耐腐蚀性，但具有太低的交换各向异性，无法在传统的SVMR传感器中使用。 在优选实施例中，AF层是氧化镍，并且形成在用作衬底的磁阻（MR）屏蔽之一上。 因此，AF材料也用作绝缘MR间隙材料。 在SVMR传感器的底部上交换耦合的AF层和层压的AP钉扎层的位置允许在制造SVMR传感器时改善自由层的纵向偏置。

公开(公告)号：US5856617A

公开(公告)日：1999-01-05

申请号：US922210

申请日：1997-09-02

申请人： Bruce Alvin Gurney ,  Harry Jonathon Mamin ,  Daniel Rugar ,  Virgil Simon Speriosu

发明人： Bruce Alvin Gurney ,  Harry Jonathon Mamin ,  Daniel Rugar ,  Virgil Simon Speriosu

IPC分类号： G01B7/24 ,  G01B7/34 ,  G01Q20/00 ,  G01Q60/24 ,  G11B9/00 ,  G01R33/02

CPC分类号： G01Q20/04 ,  B82Y35/00 ,  G11B9/1409 ,  G11B9/1418 ,  Y10S977/849 ,  Y10S977/851 ,  Y10S977/863 ,  Y10S977/873

摘要： An atomic force microscope (AFM) uses a spin valve magnetoresistive strain gauge formed on the AFM cantilever to detect deflection of the cantilever. The spin valve strain gauge operates in the absence of an applied magnetic field. The spin valve strain gauge is formed on the AFM cantilever as a plurality of films, one of which is a free ferromagnetic layer that has nonzero magnetostriction and whose magnetic moment is free to rotate in the presence of an applied magnetic field. In the presence of an applied stress to the free ferromagnetic layer due to deflection of the cantilever, an angular displacement of the magnetic moment of the free ferromagnetic layer occurs, which results in a change in the electrical resistance of the spin valve strain gauge. Electrical resistance detection circuitry coupled to the spin valve strain gauge is used to determine cantilever deflection.

摘要翻译： 原子力显微镜（AFM）使用形成在AFM悬臂上的自旋阀磁阻应变仪来检测悬臂的偏转。 自旋阀应变计在没有施加磁场的情况下工作。 自旋阀应变计形成在AFM悬臂上作为多个膜，其中之一是具有非零磁致伸缩的自由铁磁层，并且在施加的磁场的存在下其磁矩自由旋转。 在由于悬臂的偏转而对自由铁磁层施加的应力的存在下，发生自由铁磁层的磁矩的角位移，这导致自旋阀应变计的电阻的变化。 耦合到自旋阀应变仪的电阻检测电路用于确定悬臂偏转。

公开(公告)号：US5650887A

公开(公告)日：1997-07-22

申请号：US606625

申请日：1996-02-26

申请人： Moris Musa Dovek ,  Bruce Alvin Gurney ,  Virgil Simon Speriosu

发明人： Moris Musa Dovek ,  Bruce Alvin Gurney ,  Virgil Simon Speriosu

IPC分类号： G11B5/00 ,  G11B5/012 ,  G11B5/39 ,  G11B20/10 ,  G11B5/455

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B20/10 ,  G11B2005/0008 ,  G11B2005/3996 ,  G11B5/3903

摘要： Sensors based on the giant magnetoresistance effect, specifically "spin valve" (SV) magnetoresistive sensors, have applications as external magnetic field sensors and as read heads in magnetic recording systems, such as rigid disk drives. These sensors have a ferromagnetic layer whose magnetization orientation is fixed or pinned by being exchange coupled to an antiferromagnetic layer. The magnetization of the pinned layer will become misaligned and the sensor will experience an abnormal response to the field being sensed, i.e., the external magnetic field or the recorded data in the magnetic media, if an adverse event elevates the antiferromagnetic layer above its blocking temperature. A pinned layer mangetization reset system is incorporated into systems that use SV sensors. The reset system generates an electrical current waveform that is directed through the SV sensor with an initial current value sufficient to heat the antiferromagnetic layer above its blocking temperature, and a subsequent lower current value to generate a magnetic field around the pinned layer sufficient to properly orient the magnetization of the pinned layer while the antiferromagnetic layer is cooling below its blocking temperature. This process resets the magnetization of the pinned layer to its preferred orientation and returns the SV sensor response substantially back to its desired state.

摘要翻译： 基于巨磁电阻效应的传感器，特别是“自旋阀”（SV）磁阻传感器，可用作磁记录系统中的外部磁场传感器和读磁头，例如刚性磁盘驱动器。 这些传感器具有铁磁层，其磁化方向通过交换耦合到反铁磁层而固定或固定。 被钉扎层的磁化将变得不对准，如果不利的事件使反铁磁层升高到其阻挡温度以上，传感器将会感受到正被感测的场的异常响应，即外部磁场或磁性介质中的记录数据 。 固定层封装复位系统被并入使用SV传感器的系统中。 复位系统产生通过SV传感器的电流波形，其具有足以将反铁磁层加热到高于其阻挡温度的初始电流值，以及随后的较低电流值以产生围绕被钉扎层的足够的磁场以适当定向 当反铁磁层冷却到其阻挡温度以下时，被钉扎层的磁化强度。 该过程将钉扎层的磁化重置为其优选的取向，并使SV传感器响应基本上返回到其期望的状态。

公开(公告)号：US06452761B1

公开(公告)日：2002-09-17

申请号：US09483087

申请日：2000-01-14

申请人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Robert Edward Fontana, Jr. ,  Bruce Alvin Gurney ,  Stuart Stephen Papworth-Parkin ,  Ren Xu

发明人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Robert Edward Fontana, Jr. ,  Bruce Alvin Gurney ,  Stuart Stephen Papworth-Parkin ,  Ren Xu

IPC分类号： G11B533

CPC分类号： B82Y10/00 ,  G11B5/3103 ,  G11B5/3106 ,  G11B5/3133 ,  G11B5/3903 ,  G11B5/40 ,  Y10T29/49043

摘要： The current invention provides for magnetic sensor devices with reduced gap thickness and improved thermal conductivity. Gap structures of the current invention are integrated in laminated Magneto-Resistive and Spin-Valve sensors used in magnetic data storage systems. The gap structures are produced by depositing metal layers and oxidizing portions of or all of the metal layers to form thin high quality oxidized metal dielectric separator layers. The oxidized metal layer provides for excellent electrical insulation of the sensor element and any remaining metallic portions of the metal layers provide a thermally conducting pathway to assist the dissipation of heat generated by the sensor element. Because of the combined qualities of electrical insulation and thermal conductivity, magnetic sensor devices of this invention can be made with thinner gap structures and operated at higher drive currents. Further, oxidized metal layers provide suitable surfaces to growing oxidized metal gap insulator layers of any thickness.

摘要翻译： 本发明提供了具有减小的间隙厚度和改善的导热性的磁传感器装置。 本发明的间隙结构集成在磁数据存储系统中使用的层压磁阻和旋转阀传感器中。 通过沉积金属层和氧化金属层的全部或全部以形成薄的高质量的氧化金属介电隔离层来产生间隙结构。 氧化的金属层提供传感器元件的优异的电绝缘性，并且金属层的任何剩余的金属部分提供导热通路，以帮助消散由传感器元件产生的热量。 由于电绝缘和导热性的综合特性，本发明的磁传感器装置可以用较薄的间隙结构制成，并在较高的驱动电流下工作。 此外，氧化的金属层为任何厚度的生长的氧化金属间隙绝缘体层提供合适的表面。

公开(公告)号：US06266218B1

公开(公告)日：2001-07-24

申请号：US09428734

申请日：1999-10-28

申请人： Matthew Joseph Carey ,  Robert Edward Fontana, Jr. ,  Bruce Alvin Gurney

发明人： Matthew Joseph Carey ,  Robert Edward Fontana, Jr. ,  Bruce Alvin Gurney

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G01R33/096 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B2005/3996

摘要： A longitudinal bias structure to be placed adjacent a ferromagnetic free layer or a sense layer which is responsive to an external magnetic field and belongs to a magnetic sensor, for example a magnetic readback sensor such as an anisotropic magnetoresistive (AMR) sensor, giant magnetoresistive (GMR) sensor such as GMR spin valve sensor or GMR multilayer sensor or in tunnel valve sensor. The longitudinal bias structure is built up of a top ferromagnetic bias layer of first thickness t1 having a first magnetic moment M1, a bottom ferromagnetic bias layer of second thickness t2 having a second magnetic moment M2 which is anti-parallel to first magnetic moment M1 of the top ferromagnetic bias layer, and an exchange-coupling layer disposed between the top and bottom bias layers. In this configuration the top ferromagnetic bias layer and the bottom ferromagnetic bias layer are antiferromagnetically coupled by the exchange-coupling layer and the remnant magnetization thickness product of the bias structure is desirably low and equal to M1t1−M2t2. The longitudinal bias structure can further include an antiferromagnetic layer next to one of the ferromagnetic bias layers to provide a pinned longitudinal bias structure.

摘要翻译： 邻近铁磁自由层或响应于外部磁场并属于磁传感器的感测层的纵向偏置结构，例如磁性回读传感器，例如各向异性磁阻（AMR）传感器，巨磁阻（ GMR）传感器，如GMR自旋阀传感器或GMR多层传感器或隧道阀传感器。 纵向偏置结构由具有第一磁矩M1的第一厚度t1的顶部铁磁偏置层构成，第二厚度t2的底部铁磁偏置层具有第二磁矩M2，第二磁矩M2与第一磁矩M1的第一磁矩M1反平行 顶部铁磁偏置层以及设置在顶部和底部偏置层之间的交换耦合层。 在该配置中，顶部铁磁偏置层和底部铁磁偏置层通过交换耦合层进行反铁磁耦合，并且偏置结构的剩余磁化厚度乘积期望低且等于M1t1-M2t2。 纵向偏置结构还可以包括与铁磁偏置层之一相邻的反铁磁层，以提供钉扎的纵向偏置结构。

公开(公告)号：US08760817B2

公开(公告)日：2014-06-24

申请号：US12470827

申请日：2009-05-22

申请人： Thomas Dudley Boone, Jr. ,  Bruce Alvin Gurney ,  Neil Smith

发明人： Thomas Dudley Boone, Jr. ,  Bruce Alvin Gurney ,  Neil Smith

IPC分类号： G11B5/33

CPC分类号： G11B5/39 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/398 ,  G11B2005/0005

摘要： A spin accumulation sensor having a three terminal design that allows the free layer to be located at the air bearing surface. A non-magnetic conductive spin transport layer extends from a free layer structure (located at the ABS) to a reference layer structure removed from the ABS. The sensor includes a current or voltage source for applying a current across a reference layer structure. The current or voltage source has a lead that is connected with the non-magnetic spin transport layer and also to electric ground. Circuitry for measuring a signal voltage measures a voltage between a shield that is electrically connected with the free layer structure and the ground. The free layer structure can include a spin diffusion layer that ensures that all spin current is completely dissipated before reaching the lead to the voltage source, thereby preventing shunting of the spin current to the voltage source.

摘要翻译： 具有允许自由层位于空气轴承表面的三端设计的自旋累积传感器。 非磁性导电自旋传输层从自由层结构（位于ABS处）延伸到从ABS去除的参考层结构。 传感器包括用于在参考层结构上施加电流的电流或电压源。 电流源或电压源具有与非磁性自旋传输层连接的引线，也与电接地连接。 用于测量信号电压的电路测量与自由层结构电连接的屏蔽与地之间的电压。 自由层结构可以包括自旋扩散层，其确保在到达电压源的引线之前所有自旋电流完全消散，从而防止自旋电流分流到电压源。

公开(公告)号：US08514519B2

公开(公告)日：2013-08-20

申请号：US12603443

申请日：2009-10-21

申请人： Bruce Alvin Gurney ,  Manfred Ernst Schabes ,  Bruce Alexander Wilson

发明人： Bruce Alvin Gurney ,  Manfred Ernst Schabes ,  Bruce Alexander Wilson

IPC分类号： G11B5/187 ,  G11B5/127

CPC分类号： G11B5/3133 ,  G11B2005/001

摘要： A magnetic head having a magnetic wiggler structure for initiating a high frequency magnetic oscillation in a magnetic to improve media-writeability and increase data density. The wiggler structure includes a plurality of magnetic layers that are antiparallel coupled with one another across non-magnetic antiparallel coupling layers. The wiggler structure is arranged just up-track from the point of data writing so that the high frequency oscillation is initiated just prior to the writing of data on the magnetic media.

摘要翻译： 一种具有磁摆动结构的磁头，用于启动磁性中的高频磁振荡以提高介质可写性并增加数据密度。 摆动结构包括在非磁性反平行耦合层上彼此反平行耦合的多个磁性层。 摆动结构从数据写入的角度开始排列正好，从而在磁介质上写入数据之前开始高频振荡。

公开(公告)号：US20130148223A1

公开(公告)日：2013-06-13

申请号：US13316342

申请日：2011-12-09

申请人： Patrick Mesquita Braganca ,  Richard Leo Galbraith ,  Bruce Alvin Gurney ,  Neil Smith ,  Bruce Wilson ,  Rehan Ahmed Zakai

发明人： Patrick Mesquita Braganca ,  Richard Leo Galbraith ,  Bruce Alvin Gurney ,  Neil Smith ,  Bruce Wilson ,  Rehan Ahmed Zakai

IPC分类号： G11B5/09 ,  G11B20/06

CPC分类号： G11B5/02 ,  G01R33/093 ,  G01R33/1284 ,  G11B5/3903 ,  G11B20/10018 ,  G11B2005/0016 ,  G11B2220/2516 ,  H03B15/006

摘要： A method, apparatus, and system are provided for implementing spin-torque oscillator (STO) sensing with a demodulator for hard disk drives. The demodulator measures an instantaneous phase of the readback signal from a STO sensor and converts the readback signal into a signal that is proportional to the magnetic field affecting the STO frequency during a bit time. The converted signal is used for processing by conventional data detection electronics.

摘要翻译： 提供了一种用于实现用于硬盘驱动器的解调器的自旋扭矩振荡器（STO）感测的方法，装置和系统。 解调器测量来自STO传感器的回读信号的瞬时相位，并将回读信号转换成与位时间内影响STO频率的磁场成比例的信号。 转换的信号用于常规数据检测电子设备的处理。

公开(公告)号：US20120307404A1

公开(公告)日：2012-12-06

申请号：US13149419

申请日：2011-05-31

申请人： Patrick Mesquita Braganca ,  Bruce Alvin Gurney ,  Jordan Asher Katine

发明人： Patrick Mesquita Braganca ,  Bruce Alvin Gurney ,  Jordan Asher Katine

IPC分类号： G11B5/48 ,  H03B7/14

CPC分类号： H01F10/3254 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/3903 ,  G11B2005/0005 ,  H01F10/1936 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

摘要： A spin-torque oscillator (STO) has a single free ferromagnetic layer that forms part of both a giant magnetoresistance (GMR) structure with a nonmagnetic conductive spacer layer and a tunneling magnetoresistance (TMR) structure with a tunnel barrier layer. The STO has three electrical terminals that connect to electrical circuitry that provides a spin-torque excitation current through the conductive spacer layer and a lesser sense current through the tunnel barrier layer. When the STO is used as a magnetic field sensor, the excitation current causes the magnetization of the free layer to oscillate at a fixed base frequency in the absence of an external magnetic field. A detector coupled to the sense current detects shifts in the free layer magnetization oscillation frequency from the base frequency in response to external magnetic fields.

摘要翻译： 自旋转矩振荡器（STO）具有单个自由铁磁层，其形成具有非磁性导电间隔层的巨磁电阻（GMR）结构和具有隧道势垒层的隧道磁阻（TMR）结构的一部分。 STO具有三个电气端子，其连接到通过导电间隔层提供自旋转矩激励电流的电路和通过隧道势垒层的较小感测电流。 当STO用作磁场传感器时，激励电流使得自由层的磁化在没有外部磁场的情况下以固定的基频振荡。 耦合到感测电流的检测器响应于外部磁场检测自由层磁化振荡频率从基极频率的偏移。

公开(公告)号：US08035932B2

公开(公告)日：2011-10-11

申请号：US11858816

申请日：2007-09-20

申请人： Bruce Alvin Gurney ,  Ernesto E. Marinero ,  Andrew Stuart Troup ,  David Arfon Williams ,  Joerg Wunderlich

发明人： Bruce Alvin Gurney ,  Ernesto E. Marinero ,  Andrew Stuart Troup ,  David Arfon Williams ,  Joerg Wunderlich

IPC分类号： G11B5/60

CPC分类号： G11B5/3993 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/095 ,  G11B5/3903 ,  G11B2005/0002

摘要： A Lorentz magnetoresistive sensor having integrated signal amplification. The sensor is constructed upon a substrate such as a semiconductor material, and an amplification circuit such as transistor is constructed directly into the substrate on which the magnetoresistive device is constructed. This integrated signal amplification greatly enhances sensor performance by eliminating a great deal of signal noise that would otherwise be added to the read signal.

摘要翻译： 具有集成信号放大的洛伦兹磁阻传感器。 传感器构造在诸如半导体材料的衬底上，并且诸如晶体管的放大电路直接构成到其上构成磁阻器件的衬底中。 该集成信号放大通过消除否则将被添加到读取信号的大量信号噪声来大大提高传感器性能。