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26 条记录 (耗时 0.031 秒)

    Phase shifter and multibit phase shifter
    1.
    发明授权
    Phase shifter and multibit phase shifter 失效
    移相器和多位移相器

    公开(公告)号：US06674341B2

    公开(公告)日：2004-01-06

    申请号：US10220150

    申请日：2002-08-27

    申请人： Morishige Hieda ,  Kenichi Miyaguchi ,  Kazutomi Mori ,  Michiaki Kasahara ,  Tadashi Takagi ,  Hiroshi Ikematsu ,  Norio Takeuchi ,  Hiromasa Nakaguro ,  Kazuyoshi Inami

    发明人： Morishige Hieda ,  Kenichi Miyaguchi ,  Kazutomi Mori ,  Michiaki Kasahara ,  Tadashi Takagi ,  Hiroshi Ikematsu ,  Norio Takeuchi ,  Hiromasa Nakaguro ,  Kazuyoshi Inami

    IPC分类号： H01P118

    CPC分类号： H03H11/18 ,  H03H11/20

    摘要： A miniaturized phase shifter and a multi-bit phase shifter are provided, in which filters are constructed using capacitors at FET pinch-off and pass phase can be shifted by turning the FET on and off, the phase shifter including: a first FET having a drain electrode connected to an input terminal and a source electrode connected to an output terminal; a second FET, in which one of a drain electrode and a source electrode thereof is connected to the source electrode of the first FET and the other is connected to ground via a first inductor; and a third FET, in which one of a drain electrode and a source electrode thereof is connected to the drain electrode of the first FET and the other is connected to ground via a second inductor.

    摘要翻译： 提供了一种小型化移相器和多位移相器，其中使用FET夹断电容器构建滤波器，并且可以通过打开和关闭FET来移动通过相位，该移相器包括：第一FET，具有 漏极连接到输入端子，源电极连接到输出端子; 第二FET，其漏极电极和源电极中的一个连接到第一FET的源电极，另一个通过第一电感器连接到地; 以及第三FET，其中漏电极和源电极中的一个连接到第一FET的漏电极，另一个通过第二电感器连接到地。

    Multiport amplifier and wireless device using the same
    4.
    发明授权
    Multiport amplifier and wireless device using the same 有权
    多端口放大器和无线设备使用相同

    公开(公告)号：US08618878B2

    公开(公告)日：2013-12-31

    申请号：US13142542

    申请日：2009-10-01

    申请人： Masatake Hangai ,  Kazutomi Mori ,  Kenichi Tajima ,  Yukihiro Tahara ,  Morishige Hieda

    发明人： Masatake Hangai ,  Kazutomi Mori ,  Kenichi Tajima ,  Yukihiro Tahara ,  Morishige Hieda

    IPC分类号： H03F3/68

    CPC分类号： H03F3/68 ,  H03F3/24 ,  H03F3/602 ,  H03F2200/204

    摘要： A multiport amplifier and a wireless device using the same are obtained in which isolation among output terminals is improved, whereby the quality of communication is improved. The multiport amplifier includes an input hybrid, an output hybrid, a plurality of amplifiers and a plurality of gain and phase control circuits that are inserted between the input hybrid and the output hybrid, a plurality of output coupling circuits that are inserted between the output hybrid and a plurality of output terminals so that they receive output extraction signals corresponding to a plurality of output signals, and a feedback circuit including a frequency selection circuit that is inserted between the plurality of output coupling circuits and the plurality of gain and phase control circuits.

    摘要翻译： 获得多端口放大器和使用该多端口放大器的无线装置，其中提高了输出端子之间的隔离，从而提高了通信质量。 多端口放大器包括插入在输入混合电路和输出混合电路之间的输入混合电路，输出混合电路，多个放大器和多个增益和相位控制电路，多个输出耦合电路插入在输出混合 以及多个输出端子，使得它们接收对应于多个输出信号的输出提取信号，以及包括插入在多个输出耦合电路和多个增益和相位控制电路之间的频率选择电路的反馈电路。

    MULTIPORT AMPLIFIER AND WIRELESS DEVICE USING THE SAME
    9.
    发明申请
    MULTIPORT AMPLIFIER AND WIRELESS DEVICE USING THE SAME 有权
    多功能放大器和无线设备

    公开(公告)号：US20110267141A1

    公开(公告)日：2011-11-03

    申请号：US13142542

    申请日：2009-10-01

    申请人： Masatake Hangai ,  Kazutomi Mori ,  Kenichi Tajima ,  Yukihiro Tahara ,  Morishige Hieda

    发明人： Masatake Hangai ,  Kazutomi Mori ,  Kenichi Tajima ,  Yukihiro Tahara ,  Morishige Hieda

    IPC分类号： H03F1/00

    CPC分类号： H03F3/68 ,  H03F3/24 ,  H03F3/602 ,  H03F2200/204

    摘要： A multiport amplifier and a wireless device using the same are obtained in which isolation among output terminals is improved, whereby the quality of communication is improved. The multiport amplifier includes an input hybrid, an output hybrid, a plurality of amplifiers and a plurality of gain and phase control circuits that are inserted between the input hybrid and the output hybrid, a plurality of output coupling circuits that are inserted between the output hybrid and a plurality of output terminals so that they receive output extraction signals corresponding to a plurality of output signals, and a feedback circuit including a frequency selection circuit that is inserted between the plurality of output coupling circuits and the plurality of gain and phase control circuits.

    摘要翻译： 获得多端口放大器和使用该多端口放大器的无线装置，其中提高了输出端子之间的隔离，从而提高了通信质量。 多端口放大器包括插入在输入混合电路和输出混合电路之间的输入混合电路，输出混合电路，多个放大器和多个增益和相位控制电路，多个输出耦合电路插入在输出混合 以及多个输出端子，使得它们接收对应于多个输出信号的输出提取信号，以及包括插入在多个输出耦合电路和多个增益和相位控制电路之间的频率选择电路的反馈电路。

    High-frequency semiconductor device
    10.
    发明授权
    High-frequency semiconductor device 有权
    高频半导体器件

    公开(公告)号：US06861906B2

    公开(公告)日：2005-03-01

    申请号：US10204446

    申请日：2001-05-11

    申请人： Kazutomi Mori ,  Shintaro Shinjo ,  Kousei Maemura ,  Teruyuki Shimura ,  Kazuhiko Nakahara ,  Tadashi Takagi

    发明人： Kazutomi Mori ,  Shintaro Shinjo ,  Kousei Maemura ,  Teruyuki Shimura ,  Kazuhiko Nakahara ,  Tadashi Takagi

    IPC分类号： H01L27/06 ,  H03F3/19 ,  H03F3/21 ,  H03F3/68

    CPC分类号： H01L27/0605 ,  H03F3/19 ,  H03F3/211 ,  H03F2203/21178

    摘要： A high-frequency semiconductor device according to the present invention achieves improvements in degradation of noise characteristics and a reduction in gain, and an improvement in reduction in power efficiency while suppressing a concentration of a current to multifinger HBTs. In the multifinger HBTs constituting a first stage and an output stage of an amplifier 10, basic HBTs 14 that constitute the multifinger HBT 12 corresponding to the first stage, are each made up of an HBT 14a and an emitter resistor 14b connected to the corresponding emitter of the HBT 14a, whereas basic HBTs 18 that constitute the multifinger HBT 16 corresponding to the output stage, are each comprised of an HBT 18a and a base resistor 18c connected to the corresponding base of the HBT 18a. The high-frequency semiconductor device according to the present invention is useful as a high output power amplifier used in satellite communications, ground microwave communications, mobile communications, etc.

    摘要翻译： 根据本发明的高频半导体器件实现了噪声特性的降低和增益的降低的改善，并且在抑制电流到多焦HBT的浓度的同时，提高了功率效率的降低。 在构成放大器10的第一级和输出级的多画面HBT中，构成对应于第一级的多画面HBT 12的基本HBT 14分别由连接到相应发射极的HBT 14a和发射极电阻14b组成 而构成与输出级相对应的多功能HBT16的基本HBT 18分别由连接到HBT 18a的相应基座的HBT 18a和基极电阻18c组成。 根据本发明的高频半导体器件可用作卫星通信，地面微波通信，移动通信等中使用的高输出功率放大器。