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1.发明申请INCREASING ELECTROMIGRATION RESISTANCE IN AN INTERCONNECT STRUCTURE OF A SEMICONDUCTOR DEVICE BY FORMING AN ALLOY 审中-公开通过形成合金在半导体器件的互连结构中提高电阻率公开(公告)号：US20090197408A1
公开(公告)日：2009-08-06
申请号：US12172555
申请日：2008-07-14
IPC分类号： H01L21/44
CPC分类号： H01L21/76849 , H01L21/76858 , H01L21/76883
摘要： By introducing a metallic species into an exposed surface area of a copper region, the electromigration behavior of this surface area may be significantly enhanced. The incorporation of the metallic species may be accomplished in a highly selective manner so as to not unduly affect dielectric material positioned adjacent to the metal region, thereby essentially avoiding undue increase of leakage currents.
摘要翻译： 通过将金属物质引入铜区域的暴露表面区域，可以显着增强该表面积的电迁移行为。 金属物质的引入可以以高度选择性的方式实现，以便不会不适当地影响邻近金属区域定位的介电材料，从而基本上避免了泄漏电流的过度增加。
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2.发明授权Technique for forming metal lines in a semiconductor by adapting the temperature dependence of the line resistance 有权通过适应线路电阻的温度依赖性在半导体中形成金属线的技术公开(公告)号：US08575029B2
公开(公告)日：2013-11-05
申请号：US13272876
申请日：2011-10-13
IPC分类号： H01L21/44
CPC分类号： H01L21/76877 , H01L21/76834 , H01L21/76864 , H01L21/76883 , Y10T428/31678
摘要： By moderately introducing defects into a highly conductive material, such as copper, the resistance versus temperature behavior may be significantly modified so that enhanced electromigration behavior and/or electrical performance may be obtained in metallization structures of advanced semiconductor devices. The defect-related portion of the resistance may be moderately increased so as to change the slope of the resistance versus temperature curve, thereby allowing the incorporation of impurity atoms for enhancing the electromigration endurance while not unduly increasing the overall resistance at the operating temperature or even reducing the corresponding resistance at the specified operating temperature. Thus, by appropriately designing the electrical resistance for a target operating temperature, both the electromigration behavior and the electrical performance may be enhanced.
摘要翻译： 通过适当地将缺陷引入诸如铜的高导电材料中，可以显着地修改电阻对温度行为，从而可以在先进的半导体器件的金属化结构中获得增强的电迁移行为和/或电性能。 电阻的缺陷相关部分可以适度增加，以便改变电阻对温度曲线的斜率，从而允许引入杂质原子以增强电迁移耐力，同时不会不适当地增加在工作温度下的整体电阻甚至甚至 降低在指定工作温度下的相应电阻。 因此，通过适当地设计目标工作温度的电阻，可以提高电迁移行为和电性能。
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3.发明申请TECHNIQUE FOR FORMING METAL LINES IN A SEMICONDUCTOR BY ADAPTING THE TEMPERATURE DEPENDENCE OF THE LINE RESISTANCE 有权通过适应线路电阻的温度依赖性在半导体中形成金属线的技术公开(公告)号：US20120088365A1
公开(公告)日：2012-04-12
申请号：US13272876
申请日：2011-10-13
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , H01L21/76834 , H01L21/76864 , H01L21/76883 , Y10T428/31678
摘要： By moderately introducing defects into a highly conductive material, such as copper, the resistance versus temperature behavior may be significantly modified so that enhanced electromigration behavior and/or electrical performance may be obtained in metallization structures of advanced semiconductor devices. The defect-related portion of the resistance may be moderately increased so as to change the slope of the resistance versus temperature curve, thereby allowing the incorporation of impurity atoms for enhancing the electromigration endurance while not unduly increasing the overall resistance at the operating temperature or even reducing the corresponding resistance at the specified operating temperature. Thus, by appropriately designing the electrical resistance for a target operating temperature, both the electromigration behavior and the electrical performance may be enhanced.
摘要翻译： 通过适当地将缺陷引入诸如铜的高导电材料中，可以显着地修改电阻对温度行为，从而可以在先进的半导体器件的金属化结构中获得增强的电迁移行为和/或电性能。 电阻的缺陷相关部分可以适度增加，以便改变电阻对温度曲线的斜率，从而允许引入杂质原子以增强电迁移耐力，同时不会不适当地增加在工作温度下的整体电阻甚至甚至 降低在指定工作温度下的相应电阻。 因此，通过适当地设计目标工作温度的电阻，可以提高电迁移行为和电性能。
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4.发明申请Increasing Electromigration Resistance in an Interconnect Structure of a Semiconductor Device by Forming an Alloy 有权通过形成合金在半导体器件的互连结构中提高耐电迁移性公开(公告)号：US20110124189A1
公开(公告)日：2011-05-26
申请号：US13015293
申请日：2011-01-27
IPC分类号： H01L21/768
CPC分类号： H01L21/76849 , H01L21/76858 , H01L21/76883
摘要： By introducing a metallic species into an exposed surface area of a copper region, the electromigration behavior of this surface area may be significantly enhanced. The incorporation of the metallic species may be accomplished in a highly selective manner so as to not unduly affect dielectric material positioned adjacent to the metal region, thereby essentially avoiding undue increase of leakage currents.
摘要翻译： 通过将金属物质引入铜区域的暴露表面区域，可以显着增强该表面积的电迁移行为。 金属物质的引入可以以高度选择性的方式实现，以便不会不适当地影响邻近金属区域定位的介电材料，从而基本上避免了泄漏电流的过度增加。
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5.发明申请TECHNIQUE FOR FORMING METAL LINES IN A SEMICONDUCTOR BY ADAPTING THE TEMPERATURE DEPENDENCE OF THE LINE RESISTANCE 有权通过适应线路电阻的温度依赖性在半导体中形成金属线的技术公开(公告)号：US20080268265A1
公开(公告)日：2008-10-30
申请号：US11952522
申请日：2007-12-07
IPC分类号： B32B15/20
CPC分类号： H01L21/76877 , H01L21/76834 , H01L21/76864 , H01L21/76883 , Y10T428/31678
摘要： By moderately introducing defects into a highly conductive material, such as copper, the resistance versus temperature behavior may be significantly modified so that enhanced electromigration behavior and/or electrical performance may be obtained in metallization structures of advanced semiconductor devices. The defect-related portion of the resistance may be moderately increased so as to change the slope of the resistance versus temperature curve, thereby allowing the incorporation of impurity atoms for enhancing the electromigration endurance while not unduly increasing the overall resistance at the operating temperature or even reducing the corresponding resistance at the specified operating temperature. Thus, by appropriately designing the electrical resistance for a target operating temperature, both the electromigration behavior and the electrical performance may be enhanced.
摘要翻译： 通过适当地将缺陷引入诸如铜的高导电材料中，可以显着地修改电阻对温度行为，从而可以在先进的半导体器件的金属化结构中获得增强的电迁移行为和/或电性能。 电阻的缺陷相关部分可以适度增加，以便改变电阻对温度曲线的斜率，从而允许引入杂质原子以增强电迁移耐力，同时不会不适当地增加在工作温度下的整体电阻甚至甚至 降低在指定工作温度下的相应电阻。 因此，通过适当地设计目标工作温度的电阻，可以提高电迁移行为和电性能。
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6.发明授权Method of forming an alloy in an interconnect structure to increase electromigration resistance 有权在互连结构中形成合金以提高电迁移率的方法公开(公告)号：US08329577B2
公开(公告)日：2012-12-11
申请号：US13015293
申请日：2011-01-27
IPC分类号： H01L21/44
CPC分类号： H01L21/76849 , H01L21/76858 , H01L21/76883
摘要： By introducing a metallic species into an exposed surface area of a copper region, the electromigration behavior of this surface area may be significantly enhanced. The incorporation of the metallic species may be accomplished in a highly selective manner so as to not unduly affect dielectric material positioned adjacent to the metal region, thereby essentially avoiding undue increase of leakage currents.
摘要翻译： 通过将金属物质引入铜区域的暴露表面区域，可以显着增强该表面积的电迁移行为。 金属物质的引入可以以高度选择性的方式实现，以便不会不适当地影响邻近金属区域定位的介电材料，从而基本上避免了泄漏电流的过度增加。
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7.发明授权Technique for forming metal lines in a semiconductor by adapting the temperature dependence of the line resistance 有权通过适应线路电阻的温度依赖性在半导体中形成金属线的技术公开(公告)号：US08058731B2
公开(公告)日：2011-11-15
申请号：US11952522
申请日：2007-12-07
CPC分类号： H01L21/76877 , H01L21/76834 , H01L21/76864 , H01L21/76883 , Y10T428/31678
摘要： By moderately introducing defects into a highly conductive material, such as copper, the resistance versus temperature behavior may be significantly modified so that enhanced electromigration behavior and/or electrical performance may be obtained in metallization structures of advanced semiconductor devices. The defect-related portion of the resistance may be moderately increased so as to change the slope of the resistance versus temperature curve, thereby allowing the incorporation of impurity atoms for enhancing the electromigration endurance while not unduly increasing the overall resistance at the operating temperature or even reducing the corresponding resistance at the specified operating temperature. Thus, by appropriately designing the electrical resistance for a target operating temperature, both the electromigration behavior and the electrical performance may be enhanced.
摘要翻译： 通过适当地将缺陷引入诸如铜的高导电材料中，可以显着地修改电阻对温度行为，从而可以在先进的半导体器件的金属化结构中获得增强的电迁移行为和/或电性能。 电阻的缺陷相关部分可以适度增加，以便改变电阻对温度曲线的斜率，从而允许引入杂质原子以增强电迁移耐力，同时不会不适当地增加在工作温度下的整体电阻甚至甚至 降低在指定工作温度下的相应电阻。 因此，通过适当地设计目标工作温度的电阻，可以提高电迁移行为和电性能。
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8.发明授权Integrated circuits with metal-insulator-metal (MIM) capacitors and methods for fabricating same 有权具有金属绝缘体金属（MIM）电容器的集成电路及其制造方法公开(公告)号：US09450042B2
公开(公告)日：2016-09-20
申请号：US13567853
申请日：2012-08-06
申请人： Matthias Lehr
发明人： Matthias Lehr
IPC分类号： H01L21/02 , H01L21/8242 , H01L49/02 , H01L23/522
CPC分类号： H01L28/75 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： Integrated circuits with metal-insulator-metal (MIM) capacitors and methods for fabricating such integrated circuits are provided. In an embodiment, an integrated circuit includes a dielectric material layer overlying a semiconductor substrate. A surface conditioning layer overlies the dielectric material layer. Further, a metal layer is formed directly on the surface conditioning layer. A MIM capacitor is positioned on the metal layer. The MIM capacitor includes a first conductive layer formed directly on the metal layer with a smooth upper surface, an insulator layer formed directly on the smooth upper surface of the first conductive layer, and a second conductive layer formed directly on the insulator layer with a smooth lower surface.
摘要翻译： 提供了具有金属 - 绝缘体 - 金属（MIM）电容器的集成电路和用于制造这种集成电路的方法。 在一个实施例中，集成电路包括覆盖半导体衬底的电介质材料层。 表面调理层覆盖在介电材料层上。 此外，在表面调理层上直接形成金属层。 MIM电容器位于金属层上。 MIM电容器包括直接在金属层上形成的具有平滑上表面的第一导电层，直接形成在第一导电层的平滑上表面上的绝缘体层，以及直接形成在绝缘体层上的平滑的第二导电层， 下表面。
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9.发明授权Stress reduction in chip packaging by using a low-temperature chip-package connection regime 有权通过使用低温芯片封装连接方式降低芯片封装的压力公开(公告)号：US08482123B2
公开(公告)日：2013-07-09
申请号：US13179643
申请日：2011-07-11
IPC分类号： H01L23/48
CPC分类号： H01L23/49811 , H01L21/4853 , H01L23/562 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/81 , H01L2224/0401 , H01L2224/05571 , H01L2224/11452 , H01L2224/11462 , H01L2224/11464 , H01L2224/11622 , H01L2224/11825 , H01L2224/13007 , H01L2224/13011 , H01L2224/13012 , H01L2224/13014 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13186 , H01L2224/1319 , H01L2224/1357 , H01L2224/13644 , H01L2224/14051 , H01L2224/16225 , H01L2224/16227 , H01L2224/17517 , H01L2224/17519 , H01L2224/81141 , H01L2224/81345 , H01L2224/81898 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/1306 , H01L2924/14 , H01L2924/00012 , H01L2924/00 , H01L2224/05552
摘要： A semiconductor chip and a package substrate may be directly connected on the basis of form closure by providing appropriately shaped complementary contact structures in the semiconductor chip and the package substrate. Consequently, solder material may no longer be required and thus any elevated temperatures during the assembly process may be avoided, which may conventionally result in significant stress forces, thereby creating damage, in particular in very complex metallization systems.
摘要翻译： 半导体芯片和封装基板可以通过在半导体芯片和封装基板中提供适当形状的互补的接触结构，在形式闭合的基础上直接连接。 因此，可能不再需要焊料材料，因此可以避免组装过程中的任何升高的温度，这常常会导致显着的应力，从而造成损坏，特别是在非常复杂的金属化系统中。
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10.发明授权公开(公告)号：US08392573B2
公开(公告)日：2013-03-05
申请号：US12847746
申请日：2010-07-30
申请人： Matthias Lehr , Stefan Baeuerle , Karsten Fanghaenel , Bernhard Thimmel , Uwe Schlarb , Olaf Meincke , Volker Driesen , Juergen Specht
发明人： Matthias Lehr , Stefan Baeuerle , Karsten Fanghaenel , Bernhard Thimmel , Uwe Schlarb , Olaf Meincke , Volker Driesen , Juergen Specht
IPC分类号： G06F15/173
CPC分类号： H04L67/02 , G06F17/3089
摘要： Transporting of flexibility changes of customer content between tenants in a multi-tenant computing system can be performed by exporting customer content from a first tenant of the multi-tenant computing system, transporting the customer content exported from the first tenant to a second tenant of the multi-tenant computing system, importing the customer content into a staging area in the second tenant to enable a user associated with second tenant to access the customer content via the staging area based on a content extraction trigger, and activating selected customer content from the staging area in a productive component of the second tenant. The content extraction trigger can characterize an extraction of at least some of the customer content from the staging area. Related methods, systems, and articles of manufacture are also disclosed.
摘要翻译： 可以通过从多租户计算系统的第一租户输出客户内容，将从第一租户输出的客户内容传送到第一租户的第二租户，来执行在多租户计算系统中的租户之间的客户内容的灵活性变化的传送 多租户计算系统，将所述客户内容导入所述第二租户中的暂存区域，以使得与第二租户相关联的用户能够基于内容提取触发器经由所述登台区域访问所述客户内容，以及从所述分段激活所选择的客户内容 第二租户生产部分的区域。 内容提取触发器可以表征从分段区域提取至少一些客户内容。 还公开了相关方法，系统和制品。
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