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公开(公告)号：US20190103846A1
公开(公告)日：2019-04-04
申请号：US16135787
申请日：2018-09-19
发明人： Yuri HONDA , Fumio HARIMA , Yoshiki KOGUSHI , Shota ISHIHARA , Fuminori MORISAWA
摘要： The present disclosure provides a power amplifier circuit capable of suppressing the occurrence of noises while enabling control of an output power level. The power amplifier circuit includes a first transistor that amplifies a first signal; a bias circuit that supplies a bias current or voltage based on a control signal to the first transistor; a second transistor to which a control current based on the control signal is supplied, which has an emitter or a source thereof connected to a collector or a drain of the first transistor, and from which a second signal obtained by amplifying the first signal is output; and a first feedback circuit provided between the collector or the drain of the second transistor and the base or the gate of the second transistor.
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公开(公告)号：US20170179892A1
公开(公告)日：2017-06-22
申请号：US15435442
申请日：2017-02-17
CPC分类号： H03F1/30 , G05F3/20 , H03F1/301 , H03F3/245 , H03F2200/451 , H03F2200/528 , H03F2200/555
摘要： Provided is a bias control circuit that includes: a reference voltage circuit that generates a reference voltage; a resistor; a temperature dependent current generating circuit that generates a temperature dependent current, which changes depending on temperature, on the basis of the reference voltage and that supplies the temperature dependent current to one end of the resistor; a reference voltage buffer circuit that applies the reference voltage to the other end of the resistor; a constant current generating circuit that generates a constant current, which is for driving the reference voltage buffer circuit, on the basis of the reference voltage and that supplies the constant current to the other end of the resistor; and a bias generating circuit that generates a bias voltage or a bias current for a power amplification circuit on the basis of the voltage at the one end of the resistor.
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公开(公告)号：US20210234523A1
公开(公告)日：2021-07-29
申请号：US17230101
申请日：2021-04-14
摘要： There is provided a power amplifier circuit with improved operation speed of the protection function against overcurrent or overvoltage. The power amplifier circuit includes an amplifier configured to amplify a radio frequency signal and output the radio frequency signal, a bias current supply circuit configured to supply a bias current to the amplifier, a detection circuit configured to detect whether the current or voltage of the amplifier is equal to or greater than a predetermined threshold; and a draw circuit configured to, when the detection circuit detects that the current or voltage is equal to or greater than the predetermined threshold, draw at least a part of the bias current supplied to the amplifier.
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公开(公告)号：US20190280658A1
公开(公告)日：2019-09-12
申请号：US16284002
申请日：2019-02-25
发明人： Fuminori MORISAWA , Kenji MUKAI , Yuri HONDA
摘要： A power amplifier module includes a first transistor that amplifies and outputs a radio frequency signal, a second transistor smaller in size than the first transistor and connected in parallel with the first transistor, a third transistor that supplies a bias current to the first and second transistors, a current detection circuit that detects a current flowing through a collector of the second transistor, and a bias control circuit that controls the bias current supplied from the third transistor to the first and second transistors by supplying a current corresponding to a detection result of the current detection circuit to a collector or a drain of the third transistor. In a case that a current flowing through the collector of the second transistor is larger than a predetermined threshold value, the bias control circuit reduces the current supplied to the collector or the drain of the third transistor.
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公开(公告)号：US20190181816A1
公开(公告)日：2019-06-13
申请号：US16280180
申请日：2019-02-20
发明人： Shota ISHIHARA , Seiko ONO , Yusuke SHIMAMUNE , Fuminori MORISAWA , Shizuki NAKAJIMA , Yuri HONDA , Kazuhiro KOSHIO , Masato SATO
CPC分类号： H03F3/21 , H03F1/0261 , H03F1/22 , H03F1/34 , H03F3/191 , H03F3/245 , H03F2200/144 , H03F2200/18 , H03F2200/318 , H03F2200/408 , H03F2200/451
摘要： A power amplifier module includes a first current source that outputs a first current corresponding to a level control voltage for controlling a signal level of an amplified signal, a second current source that outputs a second current corresponding to the level control voltage, a first transistor in which an input signal and a first bias current are supplied to a base and an emitter is grounded, a second transistor in which an emitter is connected to a collector of the first transistor, the second current is supplied to a base, and a first amplified signal obtained by amplifying the input signal is output from a collector, and a third transistor in which the first current is supplied to a collector, a bias control current or voltage is supplied to a base, and the first bias current is supplied from an emitter to the base of the first transistor.
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公开(公告)号：US20210013855A1
公开(公告)日：2021-01-14
申请号：US17038988
申请日：2020-09-30
发明人： Yuri HONDA , Fumio HARIMA , Yoshiki KOGUSHI , Shota ISHIHARA , Fuminori MORISAWA
摘要： The present disclosure provides a power amplifier circuit capable of suppressing the occurrence of noises while enabling control of an output power level. The power amplifier circuit includes a first transistor that amplifies a first signal; a bias circuit that supplies a bias current or voltage based on a control signal to the first transistor; a second transistor to which a control current based on the control signal is supplied, which has an emitter or a source thereof connected to a collector or a drain of the first transistor, and from which a second signal obtained by amplifying the first signal is output; and a first feedback circuit provided between the collector or the drain of the second transistor and the base or the gate of the second transistor.
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公开(公告)号：US20180083581A1
公开(公告)日：2018-03-22
申请号：US15710426
申请日：2017-09-20
发明人： Shota ISHIHARA , Seiko ONO , Yusuke SHIMAMUNE , Fuminori MORISAWA , Shizuki NAKAJIMA , Yuri HONDA , Kazuhiro KOSHIO , Masato SATO
IPC分类号： H03F3/21
CPC分类号： H03F3/21 , H03F1/0261 , H03F1/22 , H03F1/34 , H03F3/191 , H03F3/245 , H03F2200/144 , H03F2200/18 , H03F2200/318 , H03F2200/408 , H03F2200/451
摘要： A power amplifier module includes a first current source that outputs a first current corresponding to a level control voltage for controlling a signal level of an amplified signal, a second current source that outputs a second current corresponding to the level control voltage, a first transistor in which an input signal and a first bias current are supplied to a base and an emitter is grounded, a second transistor in which an emitter is connected to a collector of the first transistor, the second current is supplied to a base, and a first amplified signal obtained by amplifying the input signal is output from a collector, and a third transistor in which the first current is supplied to a collector, a bias control current or voltage is supplied to a base, and the first bias current is supplied from an emitter to the base of the first transistor.
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公开(公告)号：US20240056040A1
公开(公告)日：2024-02-15
申请号：US18204403
申请日：2023-06-01
CPC分类号： H03F3/245 , H04B1/04 , H03F2200/451
摘要： A radio-frequency module includes a power amplifier, a first bias circuit connected to the power amplifier, and a second bias circuit connected to the power amplifier. The first bias circuit includes a register that receives a first digital control signal corresponding to a power mode of the power amplifier and a current generation circuit that generates, based on information in the register, a first bias current, and the second bias circuit includes another register that receives a second digital control signal corresponding to the power mode and a current generation circuit that generates, based on information in the other register, a second bias current.
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公开(公告)号：US20230361170A1
公开(公告)日：2023-11-09
申请号：US18352632
申请日：2023-07-14
发明人： Fuminori MORISAWA , Kazuhiro UEDA
IPC分类号： H01L29/06 , H01L23/00 , H01L29/417 , H01L23/367
CPC分类号： H01L29/0619 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/14 , H01L24/16 , H01L29/41758 , H01L23/3675 , H01L2224/05553 , H01L2224/06152 , H01L2224/06519 , H01L2224/13014 , H01L2224/14152 , H01L2224/14519 , H01L2224/16235 , H01L2224/13024 , H01L2224/1411 , H01L2224/05548
摘要： To provide a semiconductor device and a semiconductor module that are capable of improving a heat dissipation property in the semiconductor device including a heat generating element. A semiconductor device includes: a P-type semiconductor substrate, which has a main surface and a main surface opposed to the main surface; an N-type N well, which is provided on the main surface side of the semiconductor substrate; a unit field effect transistor, which is provided in the N well; a P-type heat dissipation guard ring region, which is provided on the main surface side of the semiconductor substrate on the outside of the N well in plan view of the semiconductor substrate; wiring, which is provided on the heat dissipation guard ring region; bump placement portions; and bumps.
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公开(公告)号：US20180302045A1
公开(公告)日：2018-10-18
申请号：US16013039
申请日：2018-06-20
发明人： Shota ISHIHARA , Seiko ONO , Yusuke SHIMAMUNE , Fuminori MORISAWA , Shizuki NAKAJIMA , Yuri HONDA , Kazuhiro KOSHIO , Masato SATO
CPC分类号： H03F3/21 , H03F1/0261 , H03F1/22 , H03F1/34 , H03F3/191 , H03F3/245 , H03F2200/144 , H03F2200/18 , H03F2200/318 , H03F2200/408 , H03F2200/451
摘要： A power amplifier module includes a first current source that outputs a first current corresponding to a level control voltage for controlling a signal level of an amplified signal, a second current source that outputs a second current corresponding to the level control voltage, a first transistor in which an input signal and a first bias current are supplied to a base and an emitter is grounded, a second transistor in which an emitter is connected to a collector of the first transistor, the second current is supplied to a base, and a first amplified signal obtained by amplifying the input signal is output from a collector, and a third transistor in which the first current is supplied to a collector, a bias control current or voltage is supplied to a base, and the first bias current is supplied from an emitter to the base of the first transistor.
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