Elastic wave device and method for manufacturing the same

    公开(公告)号:US12261585B2

    公开(公告)日:2025-03-25

    申请号:US17503415

    申请日:2021-10-18

    Inventor: Yutaka Kishimoto

    Abstract: An elastic wave device includes a piezoelectric layer including a first main surface and a second main surface facing the first main surface, an acoustically reflective layer stacked on the first main surface of the piezoelectric layer, an excitation electrode disposed on the piezoelectric layer, and a support layer. The acoustically reflective layer overlaps at least the excitation electrode in a plan view of the piezoelectric layer from the side of the second main surface. The support layer surrounds the acoustically reflective layer in a plan view of the piezoelectric layer from the side of the second main surface.

    Piezoelectric device
    2.
    发明授权

    公开(公告)号:US12178132B2

    公开(公告)日:2024-12-24

    申请号:US17368907

    申请日:2021-07-07

    Abstract: In a piezoelectric device, a piezoelectric driving portion includes layers and is directly or indirectly supported by a base portion. The piezoelectric driving portion includes a piezoelectric layer, an upper electrode layer, and a lower electrode layer. The upper electrode layer is disposed on the upper side of the piezoelectric layer. The lower electrode layer faces at least a portion of the upper electrode layer with the piezoelectric layer interposed therebetween. The piezoelectric driving portion includes a through groove extending through the piezoelectric driving portion in the vertical direction, so that a pair of inner side surfaces are provided. The pair of inner side surfaces each include a first small-width portion in which the width of the through groove decreases in a downward direction from an upper end surface of the piezoelectric layer.

    Acoustic wave device, high frequency front-end circuit, and communication device

    公开(公告)号:US10924080B2

    公开(公告)日:2021-02-16

    申请号:US16540143

    申请日:2019-08-14

    Abstract: An acoustic wave device includes a supporting substrate, an acoustic reflection film the supporting substrate, a piezoelectric thin film on the acoustic reflection film, and an interdigital transducer electrode the piezoelectric thin film. The acoustic reflection film includes acoustic impedance layers including therein first, second, third, and fourth low acoustic impedance layers and first, second, and third high acoustic impedance layers. The acoustic reflection film includes a first acoustic impedance layer and a second acoustic impedance layer, the first and second acoustic impedance layers each being one of the acoustic impedance layers, and the second acoustic impedance layer has an arithmetic average roughness different from that of the first acoustic impedance layer.

    Elastic wave device
    5.
    发明授权

    公开(公告)号:US10862020B2

    公开(公告)日:2020-12-08

    申请号:US15591216

    申请日:2017-05-10

    Abstract: An elastic wave device in which a recess is provided on an upper side of a support, a piezoelectric thin film covers the recess, and an IDT electrode is provided on an upper surface of the piezoelectric thin film. A plate wave of an S0 mode or SH0 mode is used. A plurality of grooves are provided in the upper surface or lower surface of the piezoelectric thin film at a portion of the piezoelectric thin film that is positioned on a hollow section.

    Piezoelectric device
    9.
    发明授权

    公开(公告)号:US11605775B2

    公开(公告)日:2023-03-14

    申请号:US16907400

    申请日:2020-06-22

    Abstract: In a piezoelectric device, electrode layers are spaced apart from each other in the direction of the normal thereto. A first piezoelectric layer is interposed between two electrode layers of electrode layers in the direction of the normal. A second piezoelectric layer is provided on an opposite side of the first piezoelectric layer from a base portion. The second piezoelectric layer is interposed between two electrode layers of the electrode layers in the direction of the normal. The half-width of a rocking curve measured by X-ray diffraction for a lattice plane of the first piezoelectric layer substantially parallel to a first main surface is smaller than a half-width for the second piezoelectric layer. The piezoelectric constant of a material defining the first piezoelectric layer is smaller than the piezoelectric constant of a material defining the second piezoelectric layer.

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