公开(公告)号：US07297360B2

公开(公告)日：2007-11-20

申请号：US10726666

申请日：2003-12-04

申请人： Mutsuhiko Yoshioka ,  Eiji Hayashi ,  Kouji Sumiya ,  Atsushi Shiota

发明人： Mutsuhiko Yoshioka ,  Eiji Hayashi ,  Kouji Sumiya ,  Atsushi Shiota

IPC分类号： B05D5/12 ,  H01L21/31 ,  H01L21/469 ,  C08G77/20

CPC分类号： C09D183/16 ,  H01L21/02123 ,  H01L21/02282 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3121

摘要： An insulation film comprising an organosilicon polymer and an organic polymer such as polyarylene, polyarylene ether, polyimide, and fluororesin is disclosed, wherein the organosilicon polymer has a relative dielectric constant of 4 or less and has a dry etching selection ratio of 1/3 or less to silicon oxide, fluorine-doped silicon oxide, organosilicate glass, carbon-doped silicon oxide, methyl silsesquioxane, hydrogen silsesquioxane, a spin-on-glass, or polyorganosiloxane. The insulation film is used as an etching stopper or a hard mask in a dry etching process of interlayer dielectric films for semiconductors and can produce semiconductors having excellent precision with minimal damages.

摘要翻译： 公开了一种包含有机硅聚合物和有机聚合物如聚亚芳基，聚亚芳基醚，聚酰亚胺和氟树脂的绝缘膜，其中有机硅聚合物的相对介电常数为4以下，干蚀刻选择比为1/3或 硅掺杂氧化硅，有机硅酸盐玻璃，碳掺杂氧化硅，甲基硅倍半氧烷，氢倍半硅氧烷，旋涂玻璃或聚有机硅氧烷。 在半导体层间绝缘膜的干式蚀刻工艺中，绝缘膜用作蚀刻阻挡层或硬掩模，并且可以以最小的损伤产生具有优异精度的半导体。

公开(公告)号：US20070151951A1

公开(公告)日：2007-07-05

申请号：US11680332

申请日：2007-02-28

申请人： Mutsuhiko Yoshioka ,  Eiji Hayashi ,  Norihiko Ikeda

发明人： Mutsuhiko Yoshioka ,  Eiji Hayashi ,  Norihiko Ikeda

IPC分类号： C03C15/00 ,  H01L21/461 ,  C08J7/04 ,  B44C1/22

CPC分类号： H01L21/02126 ,  B24B37/042 ,  C09D183/16 ,  H01L21/02282 ,  H01L21/3121 ,  H01L21/3212 ,  H01L21/76829 ,  H01L21/7684

摘要： A stopper for chemical mechanical planarization comprising an organosilicon polymer, in particular a polycarbosilane, is provided. The stopper used for polishing wafers with a wiring pattern in the manufacture of semiconductor devices to protect interlayer dielectric films made of a material such as SiO2, fluorine dope SiO2, or organic or inorganic SOG (Spin-on glass) from damages during the chemical mechanical planarization process.

摘要翻译： 提供了一种用于化学机械平面化的塞子，其包含有机硅聚合物，特别是聚碳硅烷。 用于在半导体器件的制造中用于抛光具有布线图案的晶片的止动器，以保护由诸如SiO 2，氟掺杂SiO 2 2的材料制成的层间绝缘膜，或者 有机或无机SOG（旋转玻璃）在化学机械平面化过程中受损。

公开(公告)号：US07189651B2

公开(公告)日：2007-03-13

申请号：US10726592

申请日：2003-12-04

申请人： Mutsuhiko Yoshioka ,  Eiji Hayashi ,  Norihiko Ikeda

发明人： Mutsuhiko Yoshioka ,  Eiji Hayashi ,  Norihiko Ikeda

IPC分类号： H01L21/302

CPC分类号： H01L21/02126 ,  B24B37/042 ,  C09D183/16 ,  H01L21/02282 ,  H01L21/3121 ,  H01L21/3212 ,  H01L21/76829 ,  H01L21/7684

摘要： A stopper for chemical mechanical planarization comprising an organosilicon polymer, in particular a polycarbosilane, is provided. The stopper used for polishing wafers with a wiring pattern in the manufacture of semiconductor devices to protect interlayer dielectric films made of a material such as SiO2, fluorine dope SiO2, or organic or inorganic SOG (Spin-on glass) from damages during the chemical mechanical planarization process.

摘要翻译： 提供了一种用于化学机械平面化的塞子，其包含有机硅聚合物，特别是聚碳硅烷。 用于在半导体器件的制造中用于抛光具有布线图案的晶片的止动器，以保护由诸如SiO 2，氟掺杂SiO 2 2的材料制成的层间绝缘膜，或者 有机或无机SOG（旋转玻璃）在化学机械平面化过程中受损。

公开(公告)号：US06800330B2

公开(公告)日：2004-10-05

申请号：US10103996

申请日：2002-03-25

申请人： Eiji Hayashi ,  Michinori Nishikawa ,  Atsushi Shiota ,  Kinji Yamada

发明人： Eiji Hayashi ,  Michinori Nishikawa ,  Atsushi Shiota ,  Kinji Yamada

IPC分类号： B05D512

CPC分类号： H01L21/02126 ,  C09D183/04 ,  C09D183/14 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122

摘要： A composition for film formation capable of forming a silica-based coating film having low water absorption and dielectric constant of 2.1 or lower and useful as an interlayer insulating film material in semiconductor devices, etc. The composition contains: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one silane compound selected from the group consisting of compounds represented by formula (1), compounds represented by formula (2), and compounds represented by formula (3) in the presence of a basic catalyst and water, RaSi(OR1)4−a  (1) wherein R represents a hydrogen atom, a fluorine atom, or a monovalent organic group, R1 represents a monovalent organic group, and a is an integer of 1 or 2, Si(OR2)4  (2) wherein R2 represents a monovalent organic group, R3b(R4O)3−bSi—(R7)d—Si(OR5)3−cR6c  (3) wherein R3 to R6 may be the same or different and each represents a monovalent organic group, b and c may be the same or different and each is a number of 0 to 2, R7 represents an oxygen atom, a phenylene group, or a group represented by —(CH2)n—, wherein n is an integer of 1 to 6, and d is 0 or 1; (B) a compound compatible with or dispersible in ingredient (A) and having a boiling point or decomposition temperature of from 250 to 450° C.; and (C) an organic solvent.

摘要翻译： 用于形成能够形成低吸水性和介电常数为2.1以下并且用作半导体装置中的层间绝缘膜材料的二氧化硅系涂膜的成膜用组合物等。该组合物含有：（A）水解产物 和通过水解和缩合在式（1）表示的化合物，式（2）表示的化合物和式（3）表示的化合物中的至少一种硅烷化合物在碱性催化剂存在下水解和缩合得到的缩合物，和 水，其中R表示氢原子，氟原子或一价有机基团，R 1表示一价有机基团，a为1或2的整数，其中R 2表示一价有机基团， 其中R 3至R 6可以相同或不同，并且各自表示一价有机基团，b和c可以相同或不同，并且各自为0至2的数，R 7表示氧 原子，亚苯基， 或由 - （CH 2）n - 表示的基团，其中n为1至6的整数，d为0或1; （B）与成分（A）相容或分散且沸点或分解温度为250-450℃的化合物; 和（C）有机溶剂。

公开(公告)号：US06410151B1

公开(公告)日：2002-06-25

申请号：US09670547

申请日：2000-09-27

申请人： Takahiko Kurosawa ,  Eiji Hayashi ,  Seo Youngsoon ,  Atsushi Shiota ,  Kinji Yamada

发明人： Takahiko Kurosawa ,  Eiji Hayashi ,  Seo Youngsoon ,  Atsushi Shiota ,  Kinji Yamada

IPC分类号： B32B904

CPC分类号： H01L21/3122 ,  C09D183/04 ,  C09D183/14 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  Y10T428/31663 ,  C08L83/00

摘要： A polyorganosiloxane-based composition for film formation which gives a film having low dielectric constant and high modulus of elasticity and useful as an interlayer insulating film in semiconductor devices and the like. The composition for film formation comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing, in the presence of an alkali catalyst, at least one member selected from the group consisting of compounds (1) represented by RaSi (OR1)4−a (wherein R represents hydrogen, fluorine, or a monovalent organic group; R1 represents a monovalent organic group; and a Is an integer of 1 or 2), compounds (2) represented by Si(OR2)4 (wherein R2 represents a monovalent organic group), and compounds (3) represented by R3b(R4O)3−bSi—(R7)d—Si(OR5)3−cR6c [wherein R3 to R6 may be the same or different and each represent a monovalent organic group; b and c may be the same or different and each are an integer of 0 to 2; R7 represents oxygen, phenylene, or a group represented by —(CH2)n—, wherein n is an integer of 1 to 6; and d is 0 or 1]; and (B) a product of hydrolysis and condensation obtained by hydrolyzing and condensing, in the presence of a metal chelate compound catalyst, at least one member selected from the group consisting of the compounds (1), (2), and (3).

摘要翻译： 一种用于成膜的聚有机硅氧烷基组合物，其具有低介电常数和高弹性模量的膜，并且可用作半导体器件等中的层间绝缘膜。用于成膜的组合物包括：（A）水解和 在碱催化剂存在下，通过水解和缩合得到的缩合物，所述缩合物选自由RaSi（OR 1）4-a（其中R表示氢，氟或一价有机物）表示的化合物（1）中的至少一种 基团; R1表示一价有机基团，Is表示1或2的整数），由Si（OR 2）4表示的化合物（2）（其中，R2表示一价有机基团），R3b（ R4O）3-bSi-（R7）d-Si（OR5）3-cR6c [其中R3至R6可以相同或不同，各自表示一价有机基团; b和c可以相同或不同，各自为0〜2的整数; R7表示氧，亚苯基或由 - （CH2）n-表示的基团，其中n为1至6的整数; 和d为0或1]; 和（B）在金属螯合化合物催化剂存在下，通过水解和缩合得到的水解和缩合产物，选自化合物（1），（2）和（3）中的至少一种， 。

公开(公告)号：US06787193B2

公开(公告)日：2004-09-07

申请号：US10165324

申请日：2002-06-10

申请人： Eiji Hayashi ,  Atsushi Shiota ,  Michinori Nishikawa ,  Kinji Yamada

发明人： Eiji Hayashi ,  Atsushi Shiota ,  Michinori Nishikawa ,  Kinji Yamada

IPC分类号： B32B1800

CPC分类号： H01L21/02126 ,  C09D183/04 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02343 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/3122 ,  H01L21/31695 ,  Y02P20/544 ,  Y10T428/31663

摘要： A method for the formation of a silica film which comprises treating a film in a supercritical medium, the film comprising (A) a siloxane compound and (B) at least one member selected from the group consisting of (B-1) a compound compatible with or dispersible in ingredient (A) and having a boiling or decomposition temperature of from 150 to 500° C. and (B-2) a surfactant. The silica film has excellent mechanical strength showing a dielectric constant of generally 2.2 or lower, and hence is useful as a dielectric film in semiconductor devices and the like.

摘要翻译： 一种形成二氧化硅膜的方法，其包括在超临界介质中处理膜，所述膜包含（A）硅氧烷化合物和（B）选自（B-1）中的至少一种，与 具有或分散在成分（A）中，沸点或分解温度为150-500℃，和（B-2）表面活性剂。 该二氧化硅膜的机械强度优异，介电常数为2.2以下，因此可用作半导体装置等的电介质膜。

公开(公告)号：US06406794B1

公开(公告)日：2002-06-18

申请号：US09778822

申请日：2001-02-08

申请人： Atsushi Shiota ,  Takahiko Kurosawa ,  Eiji Hayashi ,  Makoto Sugiura ,  Toshiyuki Akiike ,  Keiji Konno ,  Tadahiro Shiba ,  Kohei Goto ,  Kinji Yamada

发明人： Atsushi Shiota ,  Takahiko Kurosawa ,  Eiji Hayashi ,  Makoto Sugiura ,  Toshiyuki Akiike ,  Keiji Konno ,  Tadahiro Shiba ,  Kohei Goto ,  Kinji Yamada

IPC分类号： B32B904

CPC分类号： C08J5/18 ,  C08G2650/58 ,  C08J2371/00 ,  C08L71/00 ,  C08L71/02 ,  C09D171/02 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  Y10T428/31663 ,  C08L83/00 ,  C08L2666/14

摘要： A film-forming composition comprising: (A) at least one silane compound selected from the group consisting of a compound shown by the following formula (1), a compound shown by the following formula (2), and a compound shown by the following formula (3) and a hydrolysis condensate of these compounds: R2R3Si(OR1)2  (1) R2Si(OR1)3  (2) Si(OR1)4  (3) wherein R1, R2, and R3 individually represent a monovalent organic group, (B) a polyether shown by the formula (PEO)p—(PPO)q—(PEO)r, wherein PEO represents a polyethylene oxide unit, PPO represents a polypropylene oxide unit, p is a number of 2-200, q is a number of 20-80, and r is a number of 2-200, and (C) an organic solvent. The composition exhibits superior storage stability, is capable of producing a low-density film having a small relative dielectric constant, low water absorption properties, and small vacant space size, and is thus suitable as an interlayer dielectric material in the manufacture of semiconductor devices.

摘要翻译： 一种成膜组合物，其包含：（A）至少一种选自由下式（1）表示的化合物，下式（2）所示的化合物和下述化合物的硅烷化合物 式（3）和这些化合物的水解缩合物：其中R1，R2和R3各自表示一价有机基团，（B）由式（PEO）p-（PPO）q-（PEO）r表示的聚醚， 其中PEO表示聚环氧乙烷单元，PPO表示聚环氧丙烷单元，p为2〜200的数，q为20〜80的数，r为2〜200的数，（C）有机溶剂 。 该组合物表现出优异的储存稳定性，能够生产具有小的相对介电常数，低吸水性和小的空间空间尺寸的低密度膜，因此适合作为制造半导体器件的层间绝缘材料。

公开(公告)号：US06410150B1

公开(公告)日：2002-06-25

申请号：US09669859

申请日：2000-09-27

申请人： Takahiko Kurosawa ,  Eiji Hayashi ,  Seo Youngsoon ,  Keiji Konno ,  Atsushi Shiota ,  Kinji Yamada

发明人： Takahiko Kurosawa ,  Eiji Hayashi ,  Seo Youngsoon ,  Keiji Konno ,  Atsushi Shiota ,  Kinji Yamada

IPC分类号： B32B904

CPC分类号： H01L21/3122 ,  C09D183/04 ,  C09D183/14 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  Y10T428/31663 ,  C08L83/00

摘要： A polyorganosiloxane-based composition for film formation which gives a film having low dielectric constant and high modulus of elasticity and useful as an interlayer insulating film in semiconductor devices and the like. The composition for film formation comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing, in the presence of an alkali catalyst, at least one member selected from the group consisting of compounds (1) represented by RaSi(OR1)4−a (wherein R represents hydrogen, fluorine, or a monovalent organic group; R1 represents a monovalent organic group; and a Is an integer of 1 or 2), compounds (2) represented by Si(OR2)4 (wherein R2 represents a monovalent organic group), and compounds (3) represented by R3b(R4O)3−bSi—(R7)d—Si(OR5)3−cR6c [wherein R3 to R6 may be the same or different and each represent a monovalent organic group; b and c may be the same or different and each are an integer of 0 to 2; R7 represents oxygen, phenylene, or a group represented by —(CH2)n—, wherein n is an integer of 1 to 6; and d is 0 or 1]; and (B) a product of hydrolysis and condensation obtained by hydrolyzing and condensing, in the presence of an acid catalyst, at least one member selected from the group consisting of the compounds (1), (2), and (3).

摘要翻译： 一种用于成膜的聚有机硅氧烷类组合物，其具有低介电常数和高弹性模量的膜，并且可用作半导体器件等中的层间绝缘膜。 用于成膜的组合物包括：（A）在碱催化剂存在下，通过水解和缩合获得的水解和缩合产物，选自由RaSi（OR1）表示的化合物（1）中的至少一种， （其中R表示氢，氟或一价有机基团; R1表示一价有机基团，Is表示1或2的整数）表示的化合物（2），由Si（OR 2）4表示的化合物（2） 一价有机基团）和由R3b（R4O）3-bSi-（R7）d-Si（OR5）3-cR6c表示的化合物（3）[其中R3至R6可以相同或不同，各自表示一价有机基团 组; b和c可以相同或不同，各自为0〜2的整数; R7表示氧，亚苯基或由 - （CH2）n-表示的基团，其中n为1至6的整数; 和d为0或1]; 和（B）在酸催化剂存在下，通过水解和缩合获得的至少一种选自化合物（1），（2）和（3）的水解和缩合的产物。

公开(公告)号：US06558747B2

公开(公告)日：2003-05-06

申请号：US10014593

申请日：2001-12-14

申请人： Rempei Nakata ,  Nobuhide Yamada ,  Hideshi Miyajima ,  Akihiro Kojima ,  Takahiko Kurosawa ,  Eiji Hayashi ,  Youngsoon Seo ,  Atsushi Shiota ,  Kinji Yamada

发明人： Rempei Nakata ,  Nobuhide Yamada ,  Hideshi Miyajima ,  Akihiro Kojima ,  Takahiko Kurosawa ,  Eiji Hayashi ,  Youngsoon Seo ,  Atsushi Shiota ,  Kinji Yamada

IPC分类号： B05D379397

CPC分类号： C08G77/16 ,  C09D183/06 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  Y10T428/31663

摘要： A method of forming an insulating film which includes the steps of: dissolving in a solvent a first and second polymer which each comprise methylpolysiloxane as the main component and one of which has a weight average molecular weight at least 10 times that of the other to thereby prepare a chemical solution; applying the chemical solution to a semiconductor substrate to form a coating film; and heat-treating the coating film to thereby form an organosilicon oxide film. The weight-average molecular weight of the first polymer is preferably at least 100 times that of the second polymer. Thus, an insulating organosilicon oxide film having a low dielectric constant and high cracking resistance is formed from a coating fluid.

公开(公告)号：US08732822B2

公开(公告)日：2014-05-20

申请号：US13328312

申请日：2011-12-16

申请人： Stuart Schechter ,  Alice Jane Bernheim Brush ,  Oriana Riva ,  Karin Strauss ,  Eiji Hayashi

发明人： Stuart Schechter ,  Alice Jane Bernheim Brush ,  Oriana Riva ,  Karin Strauss ,  Eiji Hayashi

IPC分类号： G06F21/00

CPC分类号： G06F21/629

摘要： Techniques are described for device locking with activity preservation at a specified level within a multi-level hierarchy of device states. Such locking enables a user to share a device with another user while specifying a particular level of access to the device, such as access to a particular class of applications, a specific application, or a specific task within an application. Determination of the authorized activity may be based on a currently active application, or on the particular user gesture. The level of functionality made available may be based on the number of times a user gesture is repeated. Gestures may include a selection of a hardware or software control on the device, issuance of a voice command, and the like.

摘要翻译： 描述了用于设备锁定的技术，其中活动保留在设备状态的多层次结构内的指定级别。 这种锁定使得用户能够在指定对设备的特定访问级别（例如访问特定类别的应用，特定应用或应用内的特定任务）的同时与另一用户共享设备。 授权活动的确定可以基于当前活动的应用程序，或者基于特定的用户手势。 提供的功能级别可以基于重复用户手势的次数。 手势可以包括对设备上的硬件或软件控制的选择，发出语音命令等。