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    VERTICAL STRUCTURE LED DEVICE AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    VERTICAL STRUCTURE LED DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    垂直结构LED器件及其制造方法

    公开(公告)号：US20100200867A1

    公开(公告)日：2010-08-12

    申请号：US12767324

    申请日：2010-04-26

    申请人： Myong Soo CHO ,  Ki Yeol PARK ,  Sang Yeob SONG ,  Si Hyuk LEE ,  Pun Jae CHOI

    发明人： Myong Soo CHO ,  Ki Yeol PARK ,  Sang Yeob SONG ,  Si Hyuk LEE ,  Pun Jae CHOI

    IPC分类号： H01L33/30

    CPC分类号： H01L33/0079

    摘要： A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.

    摘要翻译： 一种制造垂直结构发光二极管装置的方法，所述方法包括：在基板上依次形成第一导电型III-V族化合物半导体层，有源层和第二导电型III-V族化合物半导体层 成长 将导电基板键合到第二导电型III-V族化合物半导体层; 从第一导电型III-V族化合物半导体层去除用于生长的衬底; 以及由于去除所述用于生长的衬底而在所述第一导电III-V族化合物半导体层的暴露部分上形成电极，其中所述接合导电衬底包括通过向接合界面施加微波而部分地加热金属接合层，同时带来 金属接合层与接合界面接触。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    2.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号：US20110297992A1

    公开(公告)日：2011-12-08

    申请号：US13213988

    申请日：2011-08-19

    申请人： Pun Jae CHOI ,  Ki Yeol Park ,  Sang Bum LEE ,  Seon Young MYOUNG ,  Myong Soo CHO

    发明人： Pun Jae CHOI ,  Ki Yeol Park ,  Sang Bum LEE ,  Seon Young MYOUNG ,  Myong Soo CHO

    IPC分类号： H01L33/60

    CPC分类号： H01L33/382 ,  H01L33/20

    摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.

    摘要翻译： 提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。 根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。 第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    3.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20100171140A1

    公开(公告)日：2010-07-08

    申请号：US12728853

    申请日：2010-03-22

    申请人： Pun Jae CHOI ,  Ki Yeol Park ,  Sang Bum Lee ,  Seon Young Myoung ,  Myong Soo Cho

    发明人： Pun Jae CHOI ,  Ki Yeol Park ,  Sang Bum Lee ,  Seon Young Myoung ,  Myong Soo Cho

    IPC分类号： H01L33/00

    CPC分类号： H01L33/382 ,  H01L33/20

    摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.

    摘要翻译： 提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。 根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。 第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。

    SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE USING THE SAME
    5.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE USING THE SAME 有权
    半导体发光器件，其制造方法和使用该半导体发光器件的半导体发光器件封装

    公开(公告)号：US20110241066A1

    公开(公告)日：2011-10-06

    申请号：US13163107

    申请日：2011-06-17

    申请人： Pun Jae CHOI ,  Jin Hyun Lee ,  Ki Yeol Park ,  Myong Soo Cho

    发明人： Pun Jae CHOI ,  Jin Hyun Lee ,  Ki Yeol Park ,  Myong Soo Cho

    IPC分类号： H01L33/36

    CPC分类号： H01L33/38 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/00

    摘要： There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

    摘要翻译： 提供了一种半导体发光器件及其制造方法，以及使用该半导体发光器件的半导体发光器件封装。 一种具有第一导电类型半导体层，有源层，第二导电类型半导体层，第二电极层和绝缘层，顺序层压的第一电极层和导电基板的半导体发光器件，其中第二电极层 在第二电极层和第二导电类型半导体层之间的界面处具有暴露区域，并且第一电极层包括电连接到第一导电类型半导体层的至少一个接触孔，与第二导电类型半导体层电绝缘 和有源层，并且从第一电极层的一个表面延伸到第一导电类型半导体层的至少一部分。

    SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE USING THE SAME
    6.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE USING THE SAME 有权
    半导体发光器件，其制造方法和使用该半导体发光器件的半导体发光器件封装

    公开(公告)号：US20100193829A1

    公开(公告)日：2010-08-05

    申请号：US12757557

    申请日：2010-04-09

    申请人： Pun Jae CHOI ,  Jin Hyun Lee ,  Ki Yeol Park ,  Myong Soo Cho

    发明人： Pun Jae CHOI ,  Jin Hyun Lee ,  Ki Yeol Park ,  Myong Soo Cho

    IPC分类号： H01L33/00

    CPC分类号： H01L33/38 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/00

    摘要： There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

    摘要翻译： 提供了一种半导体发光器件及其制造方法，以及使用该半导体发光器件的半导体发光器件封装。 一种具有第一导电类型半导体层，有源层，第二导电类型半导体层，第二电极层和绝缘层，顺序层压的第一电极层和导电基板的半导体发光器件，其中第二电极层 在第二电极层和第二导电类型半导体层之间的界面处具有暴露区域，并且第一电极层包括电连接到第一导电类型半导体层的至少一个接触孔，与第二导电类型半导体层电绝缘 和有源层，并且从第一电极层的一个表面延伸到第一导电类型半导体层的至少一部分。

    LIGHT EMITTING DEVICE AND PACKAGE HAVING THE SAME
    8.
    发明申请
    LIGHT EMITTING DEVICE AND PACKAGE HAVING THE SAME 有权
    发光装置和具有该发光装置的包装

    公开(公告)号：US20100193828A1

    公开(公告)日：2010-08-05

    申请号：US12756824

    申请日：2010-04-08

    申请人： Pun Jae CHOI ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

    发明人： Pun Jae CHOI ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

    IPC分类号： H01L33/62

    CPC分类号： H01L33/382 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/00

    摘要： There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.

    摘要翻译： 提供一种发光装置，其能够使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，实现与小面积电极的均匀电流扩散，并且以低成本，高可靠性和高质量实现批量生产 。 根据本发明的一个方面的发光器件包括在其一个表面上包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光层叠体和导电性基板。 这里，发光器件包括将发光层压分离成多个发光区域的阻挡单元，第一电极结构和第二电极结构。 第一电极结构包括接合单元，接触孔和将接合单元连接到接触孔的接线单元。

    SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME
    9.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体发光二极管及其制造方法

    公开(公告)号：US20100330717A1

    公开(公告)日：2010-12-30

    申请号：US12881440

    申请日：2010-09-14

    申请人： Pun Jae CHOI ,  Sang Yeob Song ,  Suk Youn Hong

    发明人： Pun Jae CHOI ,  Sang Yeob Song ,  Suk Youn Hong

    IPC分类号： H01L33/38

    CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/24

    摘要： A high-efficiency semiconductor light emitting diode and a method for manufacturing the same are provided. The semiconductor LED has high internal quantum efficiency and can reduce the bad effect caused by the crystal defect. In the semiconductor light emitting diode, a conductive substrate has a three-dimensional top surface, and a light-emitting stack structure has a three-dimensional structure and includes an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer, which are sequentially formed on the conductive substrate. A p-electrode is formed on the p-type nitride semiconductor layer, and an n-electrode is formed on a bottom surface of the conductive substrate.

    摘要翻译： 提供一种高效半导体发光二极管及其制造方法。 半导体LED具有高的内部量子效率，并且可以减少由晶体缺陷引起的不良影响。 在半导体发光二极管中，导电性基板具有三维顶面，发光叠层结构具有三维结构，并且包括n型氮化物半导体层，有源层和p型 氮化物半导体层，其依次形成在导电基板上。 在p型氮化物半导体层上形成p电极，在导电性基板的底面上形成n电极。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    10.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
    半导体发光器件及其制造方法

    公开(公告)号：US20090085043A1

    公开(公告)日：2009-04-02

    申请号：US12210472

    申请日：2008-09-15

    申请人： Sang Yeob SONG ,  Jin Hyun LEE ,  Yu Seung KIM ,  Kwang Ki CHOI ,  Pun Jae CHOI ,  Hyun Soo KIM ,  Sang Bum LEE

    发明人： Sang Yeob SONG ,  Jin Hyun LEE ,  Yu Seung KIM ,  Kwang Ki CHOI ,  Pun Jae CHOI ,  Hyun Soo KIM ,  Sang Bum LEE

    IPC分类号： H01L33/00

    CPC分类号： H01L33/40 ,  H01L33/32

    摘要： Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.

    摘要翻译： 公开了一种半导体发光器件，其能够提高半导体发光器件的特性，例如正向电压特性和导通电压特性，通过降低输入电压来提高发光效率，并提高半导体发光器件的可靠性 器件的低压工作及其制造方法。 半导体发光器件包括：n型GaN半导体层; 形成在所述n型GaN半导体层的镓面上的有源层; 形成在有源层上的p型半导体层; 以及形成在n型GaN半导体层的氮面上并包含镧（La） - 镍（Ni）合金的n型电极。