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公开(公告)号：US20170133174A1
公开(公告)日：2017-05-11
申请号：US15318074
申请日：2015-07-15
Applicant: NANTONG MEMTECH TECHNOLOGIES CO., LTD.
Inventor： Huisheng Han , Zhenxing Wang , Yang Ding , Hongmei Zhang , Zhihao Dong , Jie Shi
CPC classification number: H01H13/10 , C23C18/1689 , C23C18/1692 , C23C18/32 , C23C18/52 , C25D3/56 , C25D3/60 , C25D5/02 , C25D5/34 , C25D5/36 , C25D5/40 , C25D7/00 , H01H1/021 , H01H1/025 , H01H11/06 , H01H13/785 , H01H2011/065 , H01H2201/002 , H01H2201/022 , H01H2229/014
Abstract: The present invention discloses a de-bouncing keypad and a preparation method thereof, wherein the keypad is composed of a rubber substrate and a metal contact having three layers of layered structures. A layer of tin alloy or lead alloy is plated on a surface of the metal contact by electroplating or chemical plating. The metal contact plated with the tin alloy or lead alloy has excellent contact bouncing resistance and arc-ablation resistance, and the metal contact is further composited with the rubber to shape and prepare the rubber de-bouncing keypad.
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Patent Agency Ranking
公开(公告)号：US09905376B2
公开(公告)日：2018-02-27
申请号：US15318042
申请日：2015-07-15
Applicant: NANTONG MEMTECH TECHNOLOGIES CO., LTD.
Inventor： Huisheng Han , Zhenxing Wang , Yang Ding , Hongmei Zhang
IPC: H01H1/021 , H01H11/04 , H01H11/06 , C23C18/16 , C23C18/18 , C23C18/36 , C23C18/50 , C23C18/52 , C23C18/48 , C25D3/14 , C25D3/56 , C25D7/00
CPC classification number: H01H1/021 , C23C18/1633 , C23C18/1692 , C23C18/1806 , C23C18/1844 , C23C18/36 , C23C18/48 , C23C18/50 , C23C18/52 , C25D3/14 , C25D3/562 , C25D7/00 , H01H11/041 , H01H11/06 , H01H2011/046
Abstract: An arc-ablation resistant switch contact and a preparation method thereof is disclosed. The switch contact is a complex having a plurality of layers of layered structure, wherein a first layer is a hydrophobic rubber layer, a second layer is an adhesive layer, a third layer is a sheet metal layer, a fourth layer is an adhesive layer, and a fifth layer is a metal plated layer; wherein, the fifth layer of metal plated layer is formed by dipping a complex of the first layer, the second layer, the third layer and the fourth layer in a chemical plating bath containing refractory metal elements, and depositing on surfaces of the second layer, the third layer and the fourth layer in the complex by a chemical deposition method.
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公开(公告)号：US20170125180A1
公开(公告)日：2017-05-04
申请号：US15318144
申请日：2015-07-15
Applicant: NANTONG MEMTECH TECHNOLOGIES CO., LTD.
Inventor： Huisheng Han , Zhenxing Wang , Yang Ding , Hongmei Zhang
CPC classification number: H01H1/021 , C23C18/1633 , C23C18/1692 , C23C18/1806 , C23C18/1844 , C23C18/32 , C23C18/48 , C23C18/50 , C23C18/52 , C25D3/12 , C25D3/562 , C25D7/00 , H01H11/041 , H01H11/042 , H01H11/06 , H01H2011/046 , H01H2011/067
Abstract: An arc-ablation resistant tungsten alloy switch contact and preparation method is disclosed. A contact member has a three-layer structure, wherein a first layer is a hydrophobic rubber layer, a second layer is a sheet metal layer, and a third layer is a tungsten alloy chemical deposition layer. A plating bath adopted in the chemical deposition contains 25-125 g/L soluble tungsten compound, 0-60 g/L soluble compound of a transition metal like ferrum, nickel, cobalt, copper or manganese, and 0-30 g/L soluble compound of tin, stibium, lead or bismuth. When a layered complex of the hydrophobic rubber layer and the sheet metal layer is chemically plated by the plating bath, a tungsten alloy plated layer is selectively deposited on a metal surface, and chemical deposition of the tungsten alloy does not occur on a surface of the hydrophobic rubber fundamentally.
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公开(公告)号：US10224156B2
公开(公告)日：2019-03-05
申请号：US15318074
申请日：2015-07-15
Applicant: NANTONG MEMTECH TECHNOLOGIES CO., LTD.
Inventor： Huisheng Han , Zhenxing Wang , Yang Ding , Hongmei Zhang , Zhihao Dong , Jie Shi
IPC: H01H13/10 , H01H1/021 , C25D3/56 , C25D3/60 , C25D5/02 , H01H1/025 , H01H11/06 , C25D5/34 , C25D5/36 , C25D5/40 , C25D7/00 , C23C18/16 , C23C18/32 , C23C18/52 , H01H13/785
Abstract: The present invention discloses a de-bouncing keypad and a preparation method thereof, wherein the keypad is composed of a rubber substrate and a metal contact having three layers of layered structures. A layer of tin alloy or lead alloy is plated on a surface of the metal contact by electroplating or chemical plating. The metal contact plated with the tin alloy or lead alloy has excellent contact bouncing resistance and arc-ablation resistance, and the metal contact is further composited with the rubber to shape and prepare the rubber de-bouncing keypad.
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公开(公告)号：US10079119B2
公开(公告)日：2018-09-18
申请号：US15318144
申请日：2015-07-15
Applicant: NANTONG MEMTECH TECHNOLOGIES CO., LTD.
Inventor： Huisheng Han , Zhenxing Wang , Yang Ding , Hongmei Zhang
IPC: H01H1/021 , H01H11/04 , H01H11/06 , C23C18/48 , C25D3/12 , C25D3/56 , C23C18/16 , C23C18/18 , C23C18/32 , C23C18/50 , C23C18/52 , C25D7/06 , C25D7/00
CPC classification number: H01H1/021 , C23C18/1633 , C23C18/1692 , C23C18/1806 , C23C18/1844 , C23C18/32 , C23C18/48 , C23C18/50 , C23C18/52 , C25D3/12 , C25D3/562 , C25D7/00 , H01H11/041 , H01H11/042 , H01H11/06 , H01H2011/046 , H01H2011/067
Abstract: An arc-ablation resistant tungsten alloy switch contact and preparation method is disclosed. A contact member has a three-layer structure, wherein a first layer is a hydrophobic rubber layer, a second layer is a sheet metal layer, and a third layer is a tungsten alloy chemical deposition layer. A plating bath adopted in the chemical deposition contains 25-125 g/L soluble tungsten compound, 0-60 g/L soluble compound of a transition metal like ferrum, nickel, cobalt, copper or manganese, and 0-30 g/L soluble compound of tin, stibium, lead or bismuth. When a layered complex of the hydrophobic rubber layer and the sheet metal layer is chemically plated by the plating bath, a tungsten alloy plated layer is selectively deposited on a metal surface, and chemical deposition of the tungsten alloy does not occur on a surface of the hydrophobic rubber fundamentally.
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公开(公告)号：US20170125179A1
公开(公告)日：2017-05-04
申请号：US15318042
申请日：2015-07-15
Applicant: NANTONG MEMTECH TECHNOLOGIES CO., LTD.
Inventor： Huisheng Han , Zhenxing Wang , Yang Ding , Hongmei Zhang
CPC classification number: H01H1/021 , C23C18/1633 , C23C18/1692 , C23C18/1806 , C23C18/1844 , C23C18/36 , C23C18/48 , C23C18/50 , C23C18/52 , C25D3/14 , C25D3/562 , C25D7/00 , H01H11/041 , H01H11/06 , H01H2011/046
Abstract: An arc-ablation resistant switch contact and a preparation method thereof is disclosed. The switch contact is a complex having a plurality of layers of layered structure, wherein a first layer is a hydrophobic rubber layer, a second layer is an adhesive layer, a third layer is a sheet metal layer, a fourth layer is an adhesive layer, and a fifth layer is a metal plated layer; wherein, the fifth layer of metal plated layer is formed by dipping a complex of the first layer, the second layer, the third layer and the fourth layer in a chemical plating bath containing refractory metal elements, and depositing on surfaces of the second layer, the third layer and the fourth layer in the complex by a chemical deposition method.
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