-
公开(公告)号：US20160307859A1
公开(公告)日：2016-10-20
申请号：US15193117
申请日：2016-06-27
发明人： Chung-Hsin Lin , Ping-Heng Wu , Chao-Wen Lay , Hung-Mo Wu , Ying-Cheng Chuang
IPC分类号： H01L23/00
CPC分类号： H01L24/05 , H01L23/3192 , H01L23/522 , H01L23/525 , H01L23/562 , H01L24/03 , H01L24/48 , H01L2224/0218 , H01L2224/0219 , H01L2224/0345 , H01L2224/036 , H01L2224/0361 , H01L2224/03614 , H01L2224/03622 , H01L2224/04042 , H01L2224/05025 , H01L2224/05082 , H01L2224/05124 , H01L2224/05147 , H01L2224/05548 , H01L2224/05554 , H01L2224/05567 , H01L2224/05624 , H01L2224/05647 , H01L2224/48463 , H01L2924/00014 , H01L2924/01073 , H01L2924/01074 , H01L2924/04953 , H01L2924/3512 , H01L2924/35121 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The invention provides a semiconductor device including a substrate, a dielectric layer, a dummy bonding pad, a bonding pad, a redistribution layer, and a metal interconnect. The substrate includes a non-device region and a device region. The dielectric layer is on the non-device region and the device region. The dummy bonding pad is on the dielectric layer of the non-device region. The metal interconnect is in the dielectric layer of the non-device region and connected to the dummy bonding pad. The bonding pad is on the dielectric layer of the device region. The buffer layer is between the bonding pad and the dielectric layer. The buffer layer includes metal, metal nitride, or a combination thereof. The redistribution layer is on the dielectric layer and connects the dummy bonding pad and the bonding pad.
摘要翻译： 本发明提供一种半导体器件，其包括衬底，电介质层，虚拟焊盘，焊盘，再分配层和金属互连。 衬底包括非器件区域和器件区域。 介电层位于非器件区域和器件区域上。 虚拟焊盘位于非器件区的介质层上。 金属互连在非器件区的介质层中并连接到虚拟焊盘。 焊盘位于器件区域的介电层上。 缓冲层位于接合焊盘和电介质层之间。 缓冲层包括金属，金属氮化物或其组合。 再分布层在电介质层上并连接虚拟焊盘和焊盘。
-
2.发明授权Semiconductor device having voids between top metal layers of metal interconnects 有权在金属互连的顶部金属层之间具有空隙的半导体器件公开(公告)号：US09418949B2
公开(公告)日：2016-08-16
申请号：US14028554
申请日：2013-09-17
发明人： Chung-Hsin Lin , Ping-Heng Wu , Chao-Wen Lay , Hung-Mo Wu , Ying-Cheng Chuang
IPC分类号： H01L23/528 , H01L23/532 , H01L23/52 , H01L21/4763 , H01L23/48 , H01L23/00 , H01L23/522 , H01L23/31 , H01L23/525
CPC分类号： H01L24/05 , H01L23/3192 , H01L23/522 , H01L23/525 , H01L23/562 , H01L24/03 , H01L24/48 , H01L2224/0218 , H01L2224/0219 , H01L2224/0345 , H01L2224/036 , H01L2224/0361 , H01L2224/03614 , H01L2224/03622 , H01L2224/04042 , H01L2224/05025 , H01L2224/05082 , H01L2224/05124 , H01L2224/05147 , H01L2224/05548 , H01L2224/05554 , H01L2224/05567 , H01L2224/05624 , H01L2224/05647 , H01L2224/48463 , H01L2924/00014 , H01L2924/01073 , H01L2924/01074 , H01L2924/04953 , H01L2924/3512 , H01L2924/35121 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The invention provides a semiconductor device including a substrate, a dielectric layer, a dummy bonding pad, a bonding pad, a redistribution layer, and a metal interconnect. The substrate includes a non-device region and a device region. The dielectric layer is on the non-device region and the device region. The dummy bonding pad is on the dielectric layer of the non-device region. The metal interconnect is in the dielectric layer of the non-device region and connected to the dummy bonding pad. The bonding pad is on the dielectric layer of the device region. The buffer layer is between the bonding pad and the dielectric layer. The buffer layer includes metal, metal nitride, or a combination thereof. The redistribution layer is on the dielectric layer and connects the dummy bonding pad and the bonding pad.
摘要翻译： 本发明提供一种半导体器件，其包括衬底，电介质层，虚拟焊盘，焊盘，再分配层和金属互连。 衬底包括非器件区域和器件区域。 介电层位于非器件区域和器件区域上。 虚拟焊盘位于非器件区的介质层上。 金属互连在非器件区的介质层中并连接到虚拟焊盘。 焊盘位于器件区域的介电层上。 缓冲层位于接合焊盘和电介质层之间。 缓冲层包括金属，金属氮化物或其组合。 再分布层在电介质层上并连接虚拟焊盘和焊盘。
-
公开(公告)号：US20150076698A1
公开(公告)日：2015-03-19
申请号：US14028554
申请日：2013-09-17
发明人： Chung-Hsin Lin , Ping-Heng Wu , Chao-Wen Lay , Hung-Mo Wu , Ying-Cheng Chuang
IPC分类号： H01L23/00
CPC分类号： H01L24/05 , H01L23/3192 , H01L23/522 , H01L23/525 , H01L23/562 , H01L24/03 , H01L24/48 , H01L2224/0218 , H01L2224/0219 , H01L2224/0345 , H01L2224/036 , H01L2224/0361 , H01L2224/03614 , H01L2224/03622 , H01L2224/04042 , H01L2224/05025 , H01L2224/05082 , H01L2224/05124 , H01L2224/05147 , H01L2224/05548 , H01L2224/05554 , H01L2224/05567 , H01L2224/05624 , H01L2224/05647 , H01L2224/48463 , H01L2924/00014 , H01L2924/01073 , H01L2924/01074 , H01L2924/04953 , H01L2924/3512 , H01L2924/35121 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The invention provides a semiconductor device including a substrate, a dielectric layer, a dummy bonding pad, a bonding pad, a redistribution layer, and a metal interconnect. The substrate includes a non-device region and a device region. The dielectric layer is on the non-device region and the device region. The dummy bonding pad is on the dielectric layer of the non-device region. The metal interconnect is in the dielectric layer of the non-device region and connected to the dummy bonding pad. The bonding pad is on the dielectric layer of the device region. The buffer layer is between the bonding pad and the dielectric layer. The buffer layer includes metal, metal nitride, or a combination thereof The redistribution layer is on the dielectric layer and connects the dummy bonding pad and the bonding pad.
摘要翻译： 本发明提供一种半导体器件，其包括衬底，电介质层，虚拟焊盘，焊盘，再分配层和金属互连。 衬底包括非器件区域和器件区域。 介电层位于非器件区域和器件区域上。 虚拟焊盘位于非器件区的介质层上。 金属互连在非器件区的介质层中并连接到虚拟焊盘。 焊盘位于器件区域的介电层上。 缓冲层位于接合焊盘和电介质层之间。 缓冲层包括金属，金属氮化物或其组合。再分配层在电介质层上并连接虚拟焊盘和焊盘。
-
公开(公告)号：US09659886B2
公开(公告)日：2017-05-23
申请号：US15193117
申请日：2016-06-27
发明人： Chung-Hsin Lin , Ping-Heng Wu , Chao-Wen Lay , Hung-Mo Wu , Ying-Cheng Chuang
IPC分类号： H01L23/528 , H01L23/532 , H01L23/52 , H01L21/4763 , H01L23/48 , H01L23/00 , H01L23/522 , H01L23/31 , H01L23/525
CPC分类号： H01L24/05 , H01L23/3192 , H01L23/522 , H01L23/525 , H01L23/562 , H01L24/03 , H01L24/48 , H01L2224/0218 , H01L2224/0219 , H01L2224/0345 , H01L2224/036 , H01L2224/0361 , H01L2224/03614 , H01L2224/03622 , H01L2224/04042 , H01L2224/05025 , H01L2224/05082 , H01L2224/05124 , H01L2224/05147 , H01L2224/05548 , H01L2224/05554 , H01L2224/05567 , H01L2224/05624 , H01L2224/05647 , H01L2224/48463 , H01L2924/00014 , H01L2924/01073 , H01L2924/01074 , H01L2924/04953 , H01L2924/3512 , H01L2924/35121 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The invention provides a semiconductor device including a substrate, a dielectric layer, a dummy bonding pad, a bonding pad, a redistribution layer, and a metal interconnect. The substrate includes a non-device region and a device region. The dielectric layer is on the non-device region and the device region. The dummy bonding pad is on the dielectric layer of the non-device region. The metal interconnect is in the dielectric layer of the non-device region and connected to the dummy bonding pad. The bonding pad is on the dielectric layer of the device region. The buffer layer is between the bonding pad and the dielectric layer. The buffer layer includes metal, metal nitride, or a combination thereof. The redistribution layer is on the dielectric layer and connects the dummy bonding pad and the bonding pad.
-
-
-
搜索结果
4 条记录 (耗时 0.012 秒)
