公开(公告)号：US20150171183A1

公开(公告)日：2015-06-18

申请号：US14405538

申请日：2013-05-30

申请人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

发明人： Shigeki Sakai ,  Wei Zhang ,  Mitsue Takahashi

IPC分类号： H01L29/51 ,  H01L21/28 ,  H01L21/324 ,  H01L29/78 ,  H01L29/66

CPC分类号： H01L29/516 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/28194 ,  H01L21/28291 ,  H01L21/324 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517 ,  H01L29/6684 ,  H01L29/78391

摘要： Provided is a ferroelectric field effect transistor (FeFET) which has a wide memory window even if the ferroelectric film thickness is 200 nm or less, and which has excellent data retention characteristics, pulse rewriting endurance and the like. An FeFET which has a structure wherein an insulating body (11) and a gate electrode conductor (4) are sequentially laminated in this order on a semiconductor base (10) that has a source region (12) and a drain region (13). The insulating body (11) is configured by laminating a first insulating body (1) and a second insulating body (2) in this order on the base (10), and the second insulating body (2) is mainly composed of an oxide of strontium, calcium, bismuth and tantalum.

摘要翻译： 提供即使铁电膜厚度为200nm以下也具有宽的存储窗口的铁电场效应晶体管（FeFET），具有优异的数据保存特性，脉冲重写耐久性等。 具有绝缘体（11）和栅电极导体（4）的结构依次层叠在具有源极区域（12）和漏极区域（13）的半导体基体（10）上的FeFET。 绝缘体（11）通过在基体（10）上依次层叠第一绝缘体（1）和第二绝缘体（2）而构成，第二绝缘体（2）主要由 锶，钙，铋和钽。

公开(公告)号：US10686043B2

公开(公告)日：2020-06-16

申请号：US15493995

申请日：2017-04-21

申请人： National Institute of Advanced Industrial Science and Technology ,  WACOM R&D Corporation

发明人： Shigeki Sakai ,  Mitsue Takahashi ,  Masaki Kusuhara ,  Masayuki Toda ,  Masaru Umeda ,  Yoshikazu Sasaki

IPC分类号： H01L29/40 ,  H01L21/28 ,  H01L29/66 ,  G11C11/22 ,  H01L21/02 ,  H01L29/78 ,  H01L29/51 ,  H01L27/1159 ,  H01L29/49

摘要： [Object] To provide a FeFET and a method of its manufacture, the FeFET having a ferroelectric whose film thickness (dr) is made small and so nanofine as to range in: 59 nm

公开(公告)号：US09818869B2

公开(公告)日：2017-11-14

申请号：US14903769

申请日：2014-07-24

申请人： National Institute of Advanced Industrial Science and Technology ,  WACOM R&D Corporation

发明人： Shigeki Sakai ,  Mitsue Takahashi ,  Masaki Kusuhara ,  Masayuki Toda ,  Masaru Umeda

IPC分类号： H01L29/78 ,  C23C16/40 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66 ,  H01L21/02 ,  H01L27/1159

CPC分类号： H01L29/78391 ,  C23C16/40 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/28291 ,  H01L27/1159 ,  H01L29/516 ,  H01L29/6684

摘要： A ferroelectric device and a manufacturing method are provided. While holding a nonvolatile memory retention capability and a multiple rewriting endurance as the distinctive features of a ferroelectric device, the disclosed ferroelectric device is wider in memory window and more adaptively made microfiner than a conventional ferroelectric device that has used a ferroelectric mainly constituted of Sr—Bi—Ta—O as an oxide of strontium, bismuth and tantalum. Directly on or with intermediary of an insulator on a semiconductor there are layered a first ferroelectric and a conductor to form a gate stack, the first ferroelectric being mainly constituted of Sr—Ca—Bi—Ta—O as an oxide of strontium, calcium, bismuth and tantalum and being built up by a metal organic vapor deposition technique from a suitable film-forming raw material. The gate stack is heat-treated to cause the first ferroelectric to develop its ferroelectricity.

公开(公告)号：US10192972B2

公开(公告)日：2019-01-29

申请号：US15690054

申请日：2017-08-29

申请人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

发明人： Shigeki Sakai ,  Wei Zhang ,  Mitsue Takahashi

IPC分类号： H01L29/51 ,  H01L21/28 ,  H01L29/66 ,  H01L21/02 ,  H01L29/78 ,  H01L21/324 ,  H01L29/49

摘要： Provided is a ferroelectric field effect transistor (FeFET) which has a wide memory window even if the ferroelectric film thickness is 200 nm or less, and which has excellent data retention characteristics, pulse rewriting endurance and the like. An FeFET which has a structure wherein an insulating body (11) and a gate electrode conductor (4) are sequentially laminated in this order on a semiconductor base (10) that has a source region (12) and a drain region (13). The insulating body (11) is configured by laminating a first insulating body (1) and a second insulating body (2) in this order on the base (10), and the second insulating body (2) is mainly composed of an oxide of strontium, calcium, bismuth and tantalum.

公开(公告)号：US11335783B2

公开(公告)日：2022-05-17

申请号：US16870308

申请日：2020-05-08

申请人： National Institute of Advanced Industrial Science and Technology ,  WACOM R&D Corporation

发明人： Shigeki Sakai ,  Mitsue Takahashi ,  Masaki Kusuhara ,  Masayuki Toda ,  Masaru Umeda ,  Yoshikazu Sasaki

IPC分类号： H01L29/40 ,  H01L21/28 ,  H01L29/66 ,  G11C11/22 ,  H01L21/02 ,  H01L29/78 ,  H01L29/51 ,  H01L27/1159 ,  H01L29/49

摘要： A FeFET and a method of its manufacture are provided, the FeFET having a ferroelectric whose film thickness (dr) is made small and so nanofine as to range in: 59 nm

公开(公告)号：US11069713B2

公开(公告)日：2021-07-20

申请号：US16315784

申请日：2017-07-03

申请人： National Institute of Advanced Industrial Science and Technology ,  WACOM R&D Corporation

发明人： Mitsue Takahashi ,  Shigeki Sakai ,  Masaki Kusuhara ,  Masayuki Toda ,  Masaru Umeda ,  Yoshikazu Sasaki

IPC分类号： H01L27/1159 ,  H01L29/78 ,  H01L21/28 ,  H01L21/311 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L27/11587 ,  H01L21/033

摘要： A semiconductor memory element is provided including a laminated structure, in which a memory member and a conductor are superposed on a semiconductor substrate. The memory member has a bottom surface in contact with the semiconductor substrate, an upper surface in contact with the conductor, and side surfaces, which are in contact with and surrounded by a partition wall; the bottom surface of the memory member has a width of equal to or not more than 100 nm; a shortest distance between the conductor and the semiconductor substrate is twice or more of the width of the bottom surface of the memory member; the side surface of the memory member has a width, which is either the same as the width of the bottom surface and constant at any position above the bottom surface, or the widest at a position other than the bottom surface and above the bottom surface.

公开(公告)号：US09780186B2

公开(公告)日：2017-10-03

申请号：US14405538

申请日：2013-05-30

申请人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

发明人： Shigeki Sakai ,  Wei Zhang ,  Mitsue Takahashi

IPC分类号： H01L29/51 ,  H01L21/28 ,  H01L29/66 ,  H01L21/02 ,  H01L29/78 ,  H01L21/324 ,  H01L29/49

CPC分类号： H01L29/516 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/28194 ,  H01L21/28291 ,  H01L21/324 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517 ,  H01L29/6684 ,  H01L29/78391

摘要： Provided is a ferroelectric field effect transistor (FeFET) which has a wide memory window even if the ferroelectric film thickness is 200 nm or less, and which has excellent data retention characteristics, pulse rewriting endurance and the like. An FeFET which has a structure wherein an insulating body (11) and a gate electrode conductor (4) are sequentially laminated in this order on a semiconductor base (10) that has a source region (12) and a drain region (13). The insulating body (11) is configured by laminating a first insulating body (1) and a second insulating body (2) in this order on the base (10), and the second insulating body (2) is mainly composed of an oxide of strontium, calcium, bismuth and tantalum.