RESIN COMPOSITION FOR INSULATING FILM
    1.
    发明申请

    公开(公告)号:US20200347226A1

    公开(公告)日:2020-11-05

    申请号:US16960451

    申请日:2019-01-09

    摘要: A resin composition which is for an insulating film and from which a cured product having a further reduced dielectric constant and dielectric loss tangent is obtained; a photosensitive resin composition; a method for producing a cured relief pattern using the photosensitive resin composition; and a semiconductor device with the cured relief pattern. This resin composition for an insulating film includes: a polyimide precursor; and a compound which is a polyimide precursor containing a polyamic acid ester, a thermal imidization accelerator, and a solvent, wherein the thermal imidization accelerator has a carboxyl group and an amino group or imino group which is deprotected by heat and exhibits basicity, and does not accelerate the imidization of the polyimide precursor before the protective group is released. Furthermore, a photosensitive resin composition which is for an insulating film and includes a photopolymerization initiator.

    RESIST UNDERLYING FILM-FORMING COMPOSITION CONTAINING AN AMIDE GROUP-CONTAINING POLYESTER

    公开(公告)号:US20200041905A1

    公开(公告)日:2020-02-06

    申请号:US16340212

    申请日:2017-10-03

    摘要: A resist underlayer film-forming composition capable of providing a resist underlayer film exerting a sufficient anti-reflection function particularly in a KrF process, a high solvent resistance and a high dry etching speed, and enables the formation of a photoresist pattern having a good cross-sectional shape. The composition includes a copolymer containing: structural unit (A) derived from a diepoxy compound; and structural unit (B) derived from a compound represented by formula (1) [wherein: A represents a benzene or cyclohexane ring; X represents a hydrogen atom, alkyl or alkoxy group having 1 to 10 carbon atoms and optionally substituted by a halogen atom, or an alkoxycarbonyl group having 2 to 11 carbon atoms; and Y represents —COOH or -L-NHCO—Z—COOH (wherein: Z represents an alkylene group having 3 to 10 carbon atoms and optionally substituted by an oxygen atom, sulfur atom or nitrogen atom; and L represents a single bond or a spacer)].

    COMPOSITION FOR FORMING A COATING FILM FOR REMOVING FOREIGN MATTERS

    公开(公告)号:US20230250314A1

    公开(公告)日:2023-08-10

    申请号:US18015659

    申请日:2021-07-20

    IPC分类号: C09D201/06 H01L21/56

    摘要: A simple method for removing foreign substances that are formed on a substrate during a semiconductor device production process and a composition for forming a coating film for foreign substance removal, said coating film being used in the above-described method. A composition for forming a coating film for foreign substance removal, said composition containing a polymer and a solvent and being capable of forming a coating film that dissolves in a developer liquid, wherein: the polymer is selected from among phenolic novolacs, polyhydroxystyrene derivatives and carboxylic acid-containing polymers; and the polymer is contained in an amount of 50% by mass or more relative to the total solid content in the composition.

    RESIST UNDERLAYER FILM FORMING COMPOSITION WHICH CONTAINS COMPOUND HAVING GLYCOLURIL SKELETON AS ADDITIVE

    公开(公告)号:US20190086806A1

    公开(公告)日:2019-03-21

    申请号:US16088440

    申请日:2017-03-29

    摘要: The invention provides a resist underlayer film forming composition which contains a compound having a glycoluril skeleton and which prevents collapse of a resist pattern formed on a substrate in a lithography process during semiconductor production; a resist underlayer film which uses this composition; and a method for producing a semiconductor device. The compound is of formula (1-1), wherein each of R1-R4 represents a C2-C10 alkyl group wherein a hydrogen atom is substituted by at least one substituent selected from the group consisting of a hydroxy group, a thiol group, a carboxyl group, C1-C5 alkoxyethyl groups, C1-C5 alkylsulfanyl groups and organic groups containing an ester bond, or a C2-C10 alkenyl group; the R1-R4 moieties may be the same as or different from each other; and each of R5 and R6 represents a hydrogen atom or a group selected from among C1-C10 alkyl groups and a phenyl group.