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    METHOD FOR FORMING RESIST UNDERLAYER FILM
    3.
    发明申请
    METHOD FOR FORMING RESIST UNDERLAYER FILM 审中-公开

    公开(公告)号：US20180046078A1

    公开(公告)日：2018-02-15

    申请号：US15554403

    申请日：2016-02-05

    申请人： NISSAN CHEMICAL INDUSTRIES, LTD.

    发明人： Ryo KARASAWA ,  Tetsuya SHINJO ,  Keisuke HASHIMOTO

    IPC分类号： G03F7/004 ,  G03F7/075 ,  H01L21/308 ,  C07C69/753 ,  C09D133/14 ,  G03F7/16 ,  G03F7/09 ,  C08F20/36

    摘要： A method forms a resist underlayer film that has high resistance to dry etching using a gas containing a fluorocarbon. A method for forming a resist underlayer film includes the steps of: applying to a substrate a resist underlayer film-forming composition containing a fullerene derivative in which one to six molecules of malonic acid diester of the following Formula (1): wherein two Rs are each independently a C1-10 alkyl group, are added to one molecule of fullerene, a compound having at least two epoxy groups, and a solvent; and baking the substrate applied with the resist underlayer film-forming composition at least one time at a temperature of 240° C. or higher under an atmosphere of nitrogen, argon, or a mixture thereof.

    RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING SUBSTITUTED CROSSLINKABLE COMPOUND
    4.
    发明申请
    RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING SUBSTITUTED CROSSLINKABLE COMPOUND 审中-公开
    含有替代交联化合物的耐下层膜成膜组合物

    公开(公告)号：US20160139509A1

    公开(公告)日：2016-05-19

    申请号：US14900384

    申请日：2014-06-24

    申请人： NISSAN CHEMICAL INDUSTRIES, LTD.

    发明人： Keisuke HASHIMOTO ,  Kenji TAKASE ,  Tetsuya SHINJO ,  Rikimaru SAKAMOTO ,  Takafumi ENDO

    IPC分类号： G03F7/11 ,  H01L21/311 ,  C07C39/10 ,  C09D161/22 ,  C07C43/178

    摘要： A resist underlayer film for use in lithography process which generates less sublimate, has excellent embeddability at the time of applying onto a substrate having a hole pattern, and has high dry etching resistance, wiggling resistance and heat resistance, etc. A resist underlayer film-forming composition including a resin and a crosslinkable compound of Formula (1) or Formula (2): in which Q1 is a single bond or an m1-valent organic group, R1 and R4 are each a C2-10 alkyl group or a C2-10 alkyl group having a C1-10 alkoxy group, R2 and R5 are each a hydrogen atom or a methyl group, R3 and R6 are each a C1-10 alkyl group or a C6-40 aryl group.

    摘要翻译： 一种抗蚀剂下层膜，用于生成较少升华的光刻工艺，在施加到具有孔图案的基材上具有优异的嵌入性，并且具有高耐干蚀刻性，抗翘曲性和耐热性等。抗蚀剂下层膜 - 包含树脂和式（1）或式（2）的交联性化合物的成型组合物：其中Q1为单键或m1价有机基团，R1和R4各自为C2-10烷基或C2- 10个具有C 1-10烷氧基的烷基，R 2和R 5各自为氢原子或甲基，R 3和R 6各自为C 1-10烷基或C 6-40芳基。

    CARBAZOLE NOVOLAK RESIN
    5.
    发明申请
    CARBAZOLE NOVOLAK RESIN 有权
    CARBAZOLE NOVOLAK树脂

    公开(公告)号：US20130122710A1

    公开(公告)日：2013-05-16

    申请号：US13734434

    申请日：2013-01-04

    申请人： Nissan Chemical Industries, Ltd.

    发明人： Daigo SAITO ,  Hiroaki OKUYAMA ,  Hideki MUSASHI ,  Tetsuya SHINJO ,  Keisuke HASHIMOTO

    IPC分类号： H01L21/308 ,  H01L21/027

    CPC分类号： H01L21/3081 ,  C08G12/26 ,  C08G16/02 ,  C08G61/12 ,  C08G73/0273 ,  C08G73/0672 ,  C08G2261/344 ,  C08L61/26 ,  C08L79/02 ,  C08L79/04 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0271

    摘要： There is provided a resist underlayer film having heat resistance that is used for a lithography process in the production of semiconductor devices, and a high refractive index film having transparency that is used for an electronic device. A polymer comprising a unit structure of Formula (1): wherein each of R1, R2, R3, and R5 may be a hydrogen atom, R4 may be phenyl group or naphthyl group. A resist underlayer film forming composition comprising the polymer, and a resist underlayer film formed from the composition. A high refractive index film forming composition comprising the polymer, and a high refractive index film formed from the composition.

    摘要翻译： 提供了用于制造半导体器件中的光刻工艺的具有耐热性的抗蚀剂下层膜和用于电子器件的具有透明度的高折射率膜。 包含式（1）的单元结构的聚合物：其中R 1，R 2，R 3和R 5各自可以是氢原子，R 4可以是苯基或萘基。 包含聚合物的抗蚀剂下层膜形成组合物和由该组合物形成的抗蚀剂下层膜。 包含聚合物的高折射率成膜组合物和由该组合物形成的高折射率膜。

    RESIST UNDERLAYER FILM-FORMING COMPOSITION COMPRISING CARBONYL-CONTAINING POLYHYDROXY AROMATIC RING NOVOLAC RESIN
    7.
    发明申请
    RESIST UNDERLAYER FILM-FORMING COMPOSITION COMPRISING CARBONYL-CONTAINING POLYHYDROXY AROMATIC RING NOVOLAC RESIN 审中-公开
    含有含碳的聚羟基芳族环环氧树脂的耐下层膜成膜组合物

    公开(公告)号：US20150316850A1

    公开(公告)日：2015-11-05

    申请号：US14650929

    申请日：2013-12-12

    申请人： NISSAN CHEMICAL INDUSTRIES, LTD.

    发明人： Yasunobu SOMEYA ,  Ryo KARASAWA ,  Keisuke HASHIMOTO ,  Tetsuya SHINJO ,  Rikimaru SAKAMOTO

    IPC分类号： G03F7/11 ,  H01L21/311 ,  H01L21/027 ,  C09D161/12 ,  H01L21/02

    CPC分类号： G03F7/11 ,  C09D161/12 ,  G03F7/091 ,  G03F7/094 ,  H01L21/02118 ,  H01L21/02318 ,  H01L21/0274 ,  H01L21/0277 ,  H01L21/0332 ,  H01L21/31144 ,  Y10T428/31942

    摘要： There is provided resist underlayer film for lithography process with high dry etching resistance, wiggling resistance, and heat resistance. Resist underlayer film-forming composition for lithography including polymer having unit structure of Formula (1): wherein A is hydroxy group-substituted C6-40 arylene group derived from polyhydroxy aromatic compound; B is C6-40 arylene group or C4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof; X+ is H+, NH4+, primary ammonium ion, secondary ammonium ion, tertiary ammonium ion, or quaternary ammonium ion, T is hydrogen atom, C1-10 alkyl group or C6-40 aryl group that may be substituted with halogen group, hydroxy group, nitro group, amino group, carboxylate ester group, nitrile group, or combination thereof as substituent, or C4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof, B and T may form C4-40 ring together with carbon atom to which they are bonded.

    摘要翻译： 提供了具有高耐干蚀刻性，抗翘曲性和耐热性的光刻工艺的抗蚀剂下层膜。 抗蚀剂用于光刻的下层成膜组合物，包括具有式（1）的单元结构的聚合物：其中A是衍生自多羟基芳族化合物的羟基取代的C6-40亚芳基; B是含有氮原子，氧原子，硫原子或其组合的C 6-40亚芳基或C 4-30杂环基; X +是H +，NH 4 +，伯铵离子，仲铵离子，叔铵离子或季铵离子，T是氢原子，可被卤素基团取代的C 1-10烷基或C 6-40芳基，羟基， 硝基，氨基，羧酸酯基，腈基或其组合作为取代基，或含有氮原子，氧原子，硫原子或其组合的C4-30杂环基，B和T可以与 碳原子键合。

    RESIST UNDERLAYER COATING FORMING COMPOSITION FOR FORMING PHOTO-CROSSLINKING CURED RESIST UNDERLAYER COATING
    8.
    发明申请
    RESIST UNDERLAYER COATING FORMING COMPOSITION FOR FORMING PHOTO-CROSSLINKING CURED RESIST UNDERLAYER COATING 审中-公开
    用于形成照相胶卷固化涂层的底漆涂层成型组合物

    公开(公告)号：US20130189850A1

    公开(公告)日：2013-07-25

    申请号：US13797009

    申请日：2013-03-12

    申请人： NISSAN CHEMICAL INDUSTRIES, LTD.

    发明人： Satoshi TAKEI ,  Tetsuya SHINJO ,  Motohiko HIDAKA

    IPC分类号： G03F7/09 ,  H01L21/027

    CPC分类号： G03F7/091 ,  G03F7/11 ,  G03F7/161 ,  H01L21/0271

    摘要： An underlayer coating is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and has a high dry etching rate in comparison to the photoresists, does not intermix with the photoresists, and is capable of flattening the surface of a semiconductor substrate having holes of a high aspect ratio; and an underlayer coating forming composition can form the underlayer coating. The underlayer coating forming composition for forming by light irradiation an underlayer coating used as an underlayer of a photoresist in a lithography process of the manufacture of semiconductor devices, includes a polymerizable substance and a photopolymerization initiator.

    摘要翻译： 在制造半导体器件的光刻工艺中使用底层涂层作为光致抗蚀剂的底层，并且与光致抗蚀剂相比具有高的干蚀刻速率，不与光致抗蚀剂混合，并且能够使半导体衬底的表面变平 具有高纵横比的孔; 并且形成下层涂层的组合物可以形成下层涂层。 在制造半导体器件的光刻工艺中，通过光照射形成用作光致抗蚀剂底层的底层涂层组合物包括可聚合物质和光聚合引发剂。