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    BOTTOM LAYER FILM-FORMATION COMPOSITION OF SELF-ORGANIZING FILM CONTAINING POLYCYCLIC ORGANIC VINYL COMPOUND
    2.
    发明申请
    BOTTOM LAYER FILM-FORMATION COMPOSITION OF SELF-ORGANIZING FILM CONTAINING POLYCYCLIC ORGANIC VINYL COMPOUND 审中-公开
    含有多环状有机化合物的自组织膜的底层成膜组合物

    公开(公告)号：US20150322219A1

    公开(公告)日：2015-11-12

    申请号：US14651998

    申请日：2013-12-13

    申请人： NISSAN CHEMICAL INDUSTRIES, LTD.

    发明人： Yasunobu SOMEYA ,  Hiroyuki WAKAYAMA ,  Takafumi ENDO ,  Rikimaru SAKAMOTO

    IPC分类号： C08J5/18 ,  B05D3/02 ,  B05D1/32 ,  B05D1/00

    CPC分类号： C08J5/18 ,  B05D1/005 ,  B05D1/322 ,  B05D3/0254 ,  C08F212/32 ,  C08J2325/02 ,  C08J2325/08 ,  C08J2325/14 ,  C08J2333/12 ,  C08J2339/04 ,  C09D139/04 ,  C09D145/00 ,  C09D153/00 ,  C09D201/00 ,  G03F7/0002 ,  Y10T428/24802 ,  C08F2220/281 ,  C08F2220/325 ,  C08F220/20 ,  C08F212/14 ,  C08F226/06 ,  C08F220/14 ,  C08F212/06

    摘要： An underlayer film-forming composition for a self-assembled film having a polymer including 0.2% by mole or more of a unit structure of a polycyclic aromatic vinyl compound relative to all unit structures of the polymer. The polymer includes 20% by mole or more of a unit structure of an aromatic vinyl compound relative to all the unit structures of the polymer and includes 1% by mole or more of a unit structure of the polycyclic aromatic vinyl compound relative to all the unit structures of the aromatic vinyl compound. The aromatic vinyl compound includes an optionally substituted vinylnaphthalene, acenaphthylene, or vinylcarbazole, and the polycyclic aromatic vinyl compound is vinylnaphthalene, acenaphthylene, or vinylcarbazole. The aromatic vinyl compound includes an optionally substituted styrene and an optionally substituted vinylnaphthalene, acenaphthylene, or vinylcarbazole, and the polycyclic aromatic vinyl compound is vinylnaphthalene, acenaphthylene, or vinylcarbazole.

    摘要翻译： 一种用于自组装膜的下层膜组合物，其具有相对于聚合物的所有单元结构具有包含0.2摩尔％以上的多环芳族乙烯基化合物的单元结构的聚合物。 该聚合物相对于聚合物的所有单元结构包含20摩尔％以上的芳族乙烯基化合物的单元结构，相对于所有单元，包括1摩尔％以上的多环芳香族乙烯基化合物的单元结构 芳族乙烯基化合物的结构。 芳族乙烯基化合物包括任选取代的乙烯基萘，苊烯或乙烯基咔唑，多环芳族乙烯基化合物是乙烯基萘，苊烯或乙烯基咔唑。 芳族乙烯基化合物包括任选取代的苯乙烯和任选取代的乙烯基萘，苊烯或乙烯基咔唑，多环芳族乙烯基化合物是乙烯基萘，苊烯或乙烯基咔唑。

    RESIST UNDERLAYER FILM-FORMING COMPOSITION COMPRISING CARBONYL-CONTAINING POLYHYDROXY AROMATIC RING NOVOLAC RESIN
    4.
    发明申请
    RESIST UNDERLAYER FILM-FORMING COMPOSITION COMPRISING CARBONYL-CONTAINING POLYHYDROXY AROMATIC RING NOVOLAC RESIN 审中-公开
    含有含碳的聚羟基芳族环环氧树脂的耐下层膜成膜组合物

    公开(公告)号：US20150316850A1

    公开(公告)日：2015-11-05

    申请号：US14650929

    申请日：2013-12-12

    申请人： NISSAN CHEMICAL INDUSTRIES, LTD.

    发明人： Yasunobu SOMEYA ,  Ryo KARASAWA ,  Keisuke HASHIMOTO ,  Tetsuya SHINJO ,  Rikimaru SAKAMOTO

    IPC分类号： G03F7/11 ,  H01L21/311 ,  H01L21/027 ,  C09D161/12 ,  H01L21/02

    CPC分类号： G03F7/11 ,  C09D161/12 ,  G03F7/091 ,  G03F7/094 ,  H01L21/02118 ,  H01L21/02318 ,  H01L21/0274 ,  H01L21/0277 ,  H01L21/0332 ,  H01L21/31144 ,  Y10T428/31942

    摘要： There is provided resist underlayer film for lithography process with high dry etching resistance, wiggling resistance, and heat resistance. Resist underlayer film-forming composition for lithography including polymer having unit structure of Formula (1): wherein A is hydroxy group-substituted C6-40 arylene group derived from polyhydroxy aromatic compound; B is C6-40 arylene group or C4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof; X+ is H+, NH4+, primary ammonium ion, secondary ammonium ion, tertiary ammonium ion, or quaternary ammonium ion, T is hydrogen atom, C1-10 alkyl group or C6-40 aryl group that may be substituted with halogen group, hydroxy group, nitro group, amino group, carboxylate ester group, nitrile group, or combination thereof as substituent, or C4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof, B and T may form C4-40 ring together with carbon atom to which they are bonded.

    摘要翻译： 提供了具有高耐干蚀刻性，抗翘曲性和耐热性的光刻工艺的抗蚀剂下层膜。 抗蚀剂用于光刻的下层成膜组合物，包括具有式（1）的单元结构的聚合物：其中A是衍生自多羟基芳族化合物的羟基取代的C6-40亚芳基; B是含有氮原子，氧原子，硫原子或其组合的C 6-40亚芳基或C 4-30杂环基; X +是H +，NH 4 +，伯铵离子，仲铵离子，叔铵离子或季铵离子，T是氢原子，可被卤素基团取代的C 1-10烷基或C 6-40芳基，羟基， 硝基，氨基，羧酸酯基，腈基或其组合作为取代基，或含有氮原子，氧原子，硫原子或其组合的C4-30杂环基，B和T可以与 碳原子键合。

    METHOD FOR ROUGHENING SURFACE USING WET TREATMENT
    5.
    发明申请
    METHOD FOR ROUGHENING SURFACE USING WET TREATMENT 审中-公开

    公开(公告)号：US20190092681A1

    公开(公告)日：2019-03-28

    申请号：US15760597

    申请日：2016-09-15

    申请人： NISSAN CHEMICAL INDUSTRIES, LTD.

    发明人： Keisuke HASHIMOTO ,  Yasunobu SOMEYA ,  Takahiro KISHIOKA ,  Rikimaru SAKAMOTO

    IPC分类号： C03C15/00 ,  C09D125/02 ,  C09D161/18 ,  C09D7/40

    摘要： A method for roughening a surface of a substrate, including: applying a composition containing inorganic particles and organic resin to the surface of the substrate and drying and curing the composition to form an organic resin layer; and etching the substrate by a solution containing hydrogen fluoride, hydrogen peroxide, or an acid, to roughen the surface. Preferably, the solution contains hydrogen fluoride and ammonium fluoride or hydrogen peroxide and ammonia, the resin layer contains a ratio of the particles to the resin of 5 to 50 parts by mass to 100 parts by mass, and the composition is a mixture of silica sol wherein silica is dispersed as the inorganic particles in organic solvent or titanium oxide sol wherein titanium oxide is dispersed, with a solution of the organic resin. The method is applied to a light extraction layer of an LED or a low-reflective glass of a solar cell.

    RESIST UNDERLAYER FILM-FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING POLYMER HAVING BLOCKED ISOCYANATE STRUCTURE
    6.
    发明申请
    RESIST UNDERLAYER FILM-FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING POLYMER HAVING BLOCKED ISOCYANATE STRUCTURE 审中-公开
    含有嵌段异氰酸酯结构的聚合物层析薄膜成膜组合物

    公开(公告)号：US20170045818A1

    公开(公告)日：2017-02-16

    申请号：US15303979

    申请日：2015-05-11

    申请人： NISSAN CHEMICAL INDUSTRIES, LTD.

    发明人： Ryo KARASAWA ,  Tokio NISHITA ,  Yasunobu SOMEYA ,  Takafumi ENDO ,  Rikimaru SAKAMOTO

    IPC分类号： G03F7/09 ,  C08F20/36 ,  C09D133/26 ,  H01L21/308 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26 ,  C08F20/58 ,  C09D133/14

    CPC分类号： G03F7/094 ,  C08F20/36 ,  C08F20/58 ,  C09D133/14 ,  C09D133/26 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/2037 ,  G03F7/26 ,  H01L21/0271 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/3086

    摘要： A resist underlayer film-forming composition for lithography capable of being dry-etched during pattern transfer from the upper layer or during substrate processing and capable of being removed with an alkaline aqueous solution after the substrate processing. The composition includes a polymer (A) having an acrylamide structure or an acrylic acid ester structure; a polymer (B) having a blocked isocyanate structure; and a solvent (C). The polymer (A) is a polymer including a unit structure of Formula (1). The polymer (B) is a polymer including a unit structure of Formula (2). A method for manufacturing a semiconductor device includes steps for: forming a resist pattern; etching an inorganic hard mask layer with use of the resist pattern; etching a resist underlayer film with use of the pattered inorganic hard mask layer; and processing a semiconductor substrate with use of the pattered resist underlayer film.

    摘要翻译： [问题]提供一种用于形成抗蚀剂下层膜的抗蚀剂下层膜形成用组合物，可以从上层转印图案，其可以在基板的加工过程中进行干蚀刻，并且可以使用 碱处理后的碱性水溶液。 [解决方案]含有具有丙烯酰胺结构或丙烯酸酯结构的聚合物（A），具有封端异氰酸酯结构的聚合物（B）和溶剂（C））的用于光刻的抗蚀剂下层膜成膜组合物。 聚合物（A）含有式（1）所示的单元结构。 聚合物（B）含有由式（2）表示的单元结构。 一种半导体器件的制造方法，包括：形成抗蚀剂图案的步骤; 使用抗蚀剂图案来蚀刻无机硬掩模层的步骤; 使用图案化的无机硬掩模层蚀刻抗蚀剂下层膜的步骤; 以及使用图案化的抗蚀剂下层膜来处理半导体衬底的步骤。

    FORMING UNDERLAYER FILM OF SELF-ASSEMBLED FILM INCLUDING ALIPHATIC POLYCYCLIC STRUCTURE
    8.
    发明申请
    FORMING UNDERLAYER FILM OF SELF-ASSEMBLED FILM INCLUDING ALIPHATIC POLYCYCLIC STRUCTURE 审中-公开
    自组装薄膜的形成膜包括二聚多环结构

    公开(公告)号：US20160222248A1

    公开(公告)日：2016-08-04

    申请号：US14917853

    申请日：2014-09-16

    申请人： NISSAN CHEMICAL INDUSTRIES, LTD.

    发明人： Takafumi ENDO ,  Yasunobu SOMEYA ,  Hiroyuki WAKAYAMA ,  Rikimaru SAKAMOTO

    IPC分类号： C09D165/00 ,  G03F7/09 ,  B05D3/02 ,  G03F7/11

    CPC分类号： C09D165/00 ,  B05D1/185 ,  B05D1/38 ,  B05D3/0254 ,  B05D7/52 ,  C08G83/008 ,  C08G2261/1422 ,  C08G2261/1426 ,  C08G2261/148 ,  C08G2261/312 ,  C08G2261/3142 ,  C08G2261/3162 ,  C08G2261/3241 ,  C08G2261/3246 ,  C08G2261/3325 ,  C08L101/02 ,  C09D5/00 ,  C09D145/00 ,  C09D201/00 ,  C09D201/02 ,  C09J133/066 ,  G03F7/0002 ,  G03F7/091 ,  G03F7/11

    摘要： A composition for forming an underlayer film necessary for facilitating alignment of self-assembled film into desired vertical pattern. Composition for forming an underlayer film of self-assembled film including a polymer having unit structure containing aliphatic polycyclic structure of aliphatic polycyclic compound in main chain. The polymer is a polymer having unit structure containing aliphatic polycyclic structure of aliphatic polycyclic compound with aromatic ring structure of aromatic ring-containing compound or polymer chain derived from vinyl group of vinyl group-containing compound in main chain. The polymer has unit structure of Formula (1): X—Y  Formula (1) wherein X is single bond, divalent group having vinyl structure as polymer chain, or divalent group having aromatic ring-containing structure as polymer chain, and Y is divalent group having aliphatic polycyclic structure as polymer chain. The aliphatic polycyclic compound is bi- to hexa-cyclic diene compound. The aliphatic polycyclic compound is dicyclopentadiene or norbornadiene.

    摘要翻译： 用于形成下层膜的组合物，其用于有助于将自组装膜定向成所需的垂直图案。 用于形成自组装膜的下层膜的组合物，其包含在主链中含有脂肪族多环化合物的脂肪族多环结构的单元结构的聚合物。 该聚合物是具有包含脂肪族多环结构的脂肪族多环结构的单体结构的聚合物，其具有芳香环结构的芳香环化合物或衍生自主链中含乙烯基的化合物的乙烯基的聚合物链。 聚合物具有式（1）的单元结构：其中X是单键的式（1），具有乙烯基结构作为聚合物链的二价基团或具有芳环的结构作为聚合物链的二价基团，Y 是具有脂肪族多环结构作为聚合物链的二价基团。 脂族多环化合物是二环至六环二烯化合物。 脂族多环化合物是二环戊二烯或降冰片二烯。

    BOTTOM LAYER FILM-FORMING COMPOSITION OF SELF-ORGANIZING FILM CONTAINING STYRENE STRUCTURE
    9.
    发明申请
    BOTTOM LAYER FILM-FORMING COMPOSITION OF SELF-ORGANIZING FILM CONTAINING STYRENE STRUCTURE 审中-公开
    含有苯乙烯结构的自组织膜的底层成膜组合物

    公开(公告)号：US20150315402A1

    公开(公告)日：2015-11-05

    申请号：US14651018

    申请日：2013-12-16

    申请人： NISSAN CHEMICAL INDUSTRIES, LTD

    发明人： Yasunobu SOMEYA ,  Hiroyuki WAKAYAMA ,  Takafumi ENDO ,  Rikimaru SAKAMOTO

    IPC分类号： C09D125/14 ,  G02B1/111 ,  C09D153/00

    CPC分类号： C09D125/14 ,  C08F212/08 ,  C09D125/08 ,  C09D153/00 ,  G02B1/111 ,  G03F7/0002 ,  G03F7/09 ,  Y10T428/24802 ,  C08F2220/325 ,  C08F2220/281 ,  C08F212/14 ,  C08F220/06 ,  C08F212/12 ,  C08F220/14

    摘要： There is provided a composition for forming an underlayer film used for an underlayer of a self-organizing film. An underlayer film-forming composition of a self-organizing film, the underlayer film-forming composition including a polymer made of a unit structure derived from an optionally substituted styrene and a unit structure derived from a crosslink forming group-containing compound, the polymer containing 60 mol % to 95 mol % of the unit structure derived from the styrene and 5 mol % to 40 mol % of the unit structure derived from the crosslink forming group-containing compound relative to the whole unit structures of the polymer. The crosslink forming group is a hydroxy group, an epoxy group, a protected hydroxy group, or a protected carboxy group. The crosslink forming group-containing compound is hydroxyethyl methacrylate, hydroxyethyl acrylate, hydroxypropyl methacrylate, hydroxypropyl acrylate, hydroxystyrene, acrylic acid, methacrylic acid, glycidyl methacrylate, or glycidyl acrylate.

    摘要翻译： 提供了用于形成用于自组织膜的底层的下层膜的组合物。 一种自组织膜的下层膜形成组合物，所述下层膜形成组合物包括由任选取代的苯乙烯衍生的单元结构的聚合物和衍生自含交联性基团的化合物的单元结构的聚合物，所述聚合物包含 相对于聚合物的整个单位结构，衍生自苯乙烯的单元结构的60mol％至95mol％和衍生自含交联基团的化合物的单元结构的5mol％至40mol％。 交联形成基团是羟基，环氧基，保护的羟基或被保护的羧基。 含交联形成基团的化合物是甲基丙烯酸羟乙酯，丙烯酸羟乙酯，甲基丙烯酸羟丙酯，丙烯酸羟丙酯，羟基苯乙烯，丙烯酸，甲基丙烯酸，甲基丙烯酸缩水甘油酯或丙烯酸缩水甘油酯。