公开(公告)号：US20150179482A1

公开(公告)日：2015-06-25

申请号：US14414921

申请日：2013-07-17

Applicant: NITTO DENKO CORPORATION

Inventor： Munehisa Mitani ,  Yuki Ebe ,  Yasunari Ooyabu ,  Hiroshi Noro ,  Hiroki Kono

IPC: H01L21/56 ,  H01L23/29

CPC classification number: H01L21/563 ,  H01L21/561 ,  H01L21/568 ,  H01L23/293 ,  H01L23/295 ,  H01L33/54 ,  H01L33/56 ,  H01L2924/0002 ,  H01L2933/005 ,  H01L2924/00

Abstract: A method for producing an encapsulating layer-covered semiconductor element includes a disposing step of disposing a semiconductor element on a support, an encapsulating step of embedding and encapsulating the semiconductor element by an encapsulating layer in an encapsulating sheet including a peeling layer and the encapsulating layer laminated below the peeling layer and made from a thermosetting resin before complete curing, and a heating step of heating and curing the encapsulating layer after the encapsulating step. The heating step includes a first heating step in which the encapsulating sheet is heated under a normal pressure at a first temperature, a peeling step in which the peeling layer is peeled from the encapsulating layer after the first heating step, and a second heating step in which the encapsulating layer is heated at a second temperature that is higher than the first temperature after the peeling step.

Abstract translation: 一种封装层覆盖的半导体元件的制造方法，其特征在于，具有将半导体元件配置在支撑体上的配置工序，将由封装层将半导体元件包埋并封装在包含剥离层和封装层的封装片的封装工序 层压在剥离层下方，在完全固化前由热固性树脂制成，以及在封装步骤之后加热固化封装层的加热步骤。 加热工序包括第一加热工序，在第一加热工序中，在第一温度下，在常压下加热密封片，在第一加热工序后剥离剥离层从封装层剥离的剥离工序， 其在所述剥离步骤之后在高于所述第一温度的第二温度下加热所述封装层。

公开(公告)号：US09117984B2

公开(公告)日：2015-08-25

申请号：US14141607

申请日：2013-12-27

Applicant: NITTO DENKO CORPORATION

Inventor： Hiroyuki Katayama ,  Hiroshi Noro ,  Hisataka Ito

IPC: H01L33/50 ,  H01L33/52 ,  H01L33/60

CPC classification number: H01L33/52 ,  H01L33/50 ,  H01L33/501 ,  H01L33/60 ,  H01L2224/96 ,  H01L2933/0041 ,  H01L2933/005

Abstract: A method for producing an encapsulating layer-covered optical semiconductor element includes a disposing step of disposing an encapsulating layer at one side in a thickness direction of a support and a covering step of, after the disposing step, covering an optical semiconductor element with the encapsulating layer so as to expose one surface thereof to obtain an encapsulating layer-covered optical semiconductor element.

Abstract translation: 一种封装层覆盖的光学半导体元件的制造方法，其特征在于，具有在支撑体的厚度方向的一侧设置密封层的配置工序和在所述配置工序后的覆盖工序， 以露出其一个表面以获得覆盖封装层的光学半导体元件。

公开(公告)号：US09246063B2

公开(公告)日：2016-01-26

申请号：US13785916

申请日：2013-03-05

Applicant: NITTO DENKO CORPORATION

Inventor： Yuki Ebe ,  Yasunari Ooyabu ,  Hiroshi Noro

IPC: H01L33/50 ,  H01L33/56 ,  B32B27/08

CPC classification number: H01L33/50 ,  B32B27/08 ,  H01L33/56 ,  H01L2924/0002 ,  H01L2933/005 ,  Y10T428/2848 ,  H01L2924/00

Abstract: A phosphor encapsulating sheet, for encapsulating a light emitting diode element, includes a phosphor layer, an encapsulating layer formed at one side in a thickness direction of the phosphor layer, and an adhesive layer formed at the other side in the thickness direction of the phosphor layer for being adhered to a cover layer.

Abstract translation: 用于封装发光二极管元件的磷光体封装片包括荧光体层，形成在荧光体层的厚度方向的一侧的封装层和形成在荧光体的厚度方向另一侧的粘合层 层，用于粘附到覆盖层。