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    Producing method of light emitting diode device
    1.
    发明授权
    Producing method of light emitting diode device 有权
    发光二极管器件的生产方法

    公开(公告)号：US08828753B2

    公开(公告)日：2014-09-09

    申请号：US13711159

    申请日：2012-12-11

    Applicant: Nitto Denko Corporation

    Inventor： Yuki Ebe ,  Yasunari Ooyabu

    IPC: H01L21/00 ,  H01L33/50 ,  H01L33/52

    CPC classification number: H01L33/50 ,  B29C43/18 ,  C08G77/12 ,  C08G77/16 ,  C08K5/5425 ,  C08K5/56 ,  C08L83/00 ,  C08L83/04 ,  H01L33/507 ,  H01L33/52 ,  H01L2224/48091 ,  H01L2933/0041 ,  H01L2924/00014

    Abstract: A method for producing a light emitting diode device includes the steps of preparing a board mounted with a light emitting diode; preparing a hemispherical lens molding die; preparing a light emitting diode encapsulating material which includes a light emitting diode encapsulating layer and a phosphor layer laminated thereon, and in which both layers are prepared from a resin before final curing; and disposing the light emitting diode encapsulating material between the board and the lens molding die so that the phosphor layer is opposed to the lens molding die to be compressively molded, so that the light emitting diode is directly encapsulated by the hemispherical light emitting diode encapsulating layer and the phosphor layer is disposed on the hemispherical surface thereof.

    Abstract translation: 一种发光二极管装置的制造方法，其特征在于，准备安装有发光二极管的基板; 准备半球形透镜成型模具; 制备包括发光二极管封装层和层压在其上的荧光体层的发光二极管封装材料，其中两个层由最终固化之前的树脂制备; 并且将发光二极管封装材料配置在基板与透镜成形模具之间，使得荧光体层与透镜成型模具相对地进行压缩成形，使得发光二极管直接由半球形发光二极管封装层 并且荧光体层设置在其半球形表面上。

    Producing method of encapsulating layer-covered semiconductor element and producing method of semiconductor device
    4.
    发明授权
    Producing method of encapsulating layer-covered semiconductor element and producing method of semiconductor device 有权
    封装层覆半导体元件的生产方法及半导体器件的制造方法

    公开(公告)号：US09214362B2

    公开(公告)日：2015-12-15

    申请号：US14412746

    申请日：2013-07-17

    Applicant: NITTO DENKO CORPORATION

    Inventor： Munehisa Mitani ,  Yuki Ebe ,  Yasunari Ooyabu

    IPC: H01L21/00 ,  H01L21/56 ,  H01L33/54 ,  H01L23/29 ,  H01L33/56

    CPC classification number: H01L21/563 ,  H01L21/561 ,  H01L21/568 ,  H01L23/293 ,  H01L23/295 ,  H01L33/54 ,  H01L33/56 ,  H01L2924/0002 ,  H01L2933/005 ,  H01L2924/00

    Abstract: A method for producing an encapsulating layer-covered semiconductor element includes a disposing step of disposing a semiconductor element on a support, an encapsulating step of embedding and encapsulating the semiconductor element by an encapsulating layer in an encapsulating sheet including a peeling layer and the encapsulating layer laminated below the peeling layer and made from a thermosetting resin before complete curing, and a heating step of heating and curing the encapsulating layer after the encapsulating step. The heating step includes a first heating step in which the encapsulating sheet is heated at a first temperature, while being mechanically pressurized toward the support and a second heating step in which the encapsulating sheet is heated at a second temperature that is higher than the first temperature after the first heating step.

    Abstract translation: 一种封装层覆盖的半导体元件的制造方法，其特征在于，具有将半导体元件配置在支撑体上的配置工序，将由封装层将半导体元件包埋并封装在包含剥离层和封装层的封装片的封装工序 层压在剥离层下方，在完全固化前由热固性树脂制成，以及在封装步骤之后加热固化封装层的加热步骤。 加热步骤包括第一加热步骤，其中封装片材在第一温度下被加热，同时朝着支撑体机械加压;第二加热步骤，其中封装片材在高于第一温度的第二温度下被加热 第一次加热步骤后。

    Producing method of semiconductor device
    5.
    发明授权
    Producing method of semiconductor device 有权
    半导体器件的生产方法

    公开(公告)号：US09048401B2

    公开(公告)日：2015-06-02

    申请号：US13944577

    申请日：2013-07-17

    Applicant: NITTO DENKO CORPORATION

    Inventor： Munehisa Mitani ,  Yuki Ebe ,  Yasunari Ooyabu

    IPC: H01L33/52 ,  H01L33/00 ,  H01L21/56

    CPC classification number: H01L33/52 ,  H01L21/56 ,  H01L33/005 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2933/005 ,  H01L2924/00014

    Abstract: A method for producing a semiconductor device includes a preparing step of preparing a board formed with a concave portion, a terminal disposed in or around the concave portion, and a semiconductor element disposed in the concave portion; a wire-bonding step of connecting the terminal to the semiconductor element with a wire; a pressure-welding step of pressure-welding an encapsulating sheet to the board so as to be in close contact with the upper surface of a portion around the concave portion and to be separated from the upper surface of the concave portion under a reduced pressure atmosphere; and an atmosphere releasing step of releasing the board and the encapsulating sheet under an atmospheric pressure atmosphere.

    Abstract translation: 一种半导体器件的制造方法，其特征在于，具备准备形成有凹部的基板，设置在所述凹部内或周围的端子以及设置在所述凹部中的半导体元件的准备工序。 将端子与导线连接到半导体元件的引线键合步骤; 压接步骤，将密封片压焊到所述板上，使其与所述凹部周围的部分的上表面紧密接触，并且在减压气氛下与所述凹部的上表面分离 ; 以及气氛释放步骤，在大气压气氛下释放板和封装片。

    PRODUCING METHOD OF ENCAPSULATING LAYER-COVERED SEMICONDUCTOR ELEMENT AND PRODUCING METHOD OF SEMICONDUCTOR DEVICE
    7.
    发明申请
    PRODUCING METHOD OF ENCAPSULATING LAYER-COVERED SEMICONDUCTOR ELEMENT AND PRODUCING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
    封装层状半导体元件的制造方法和半导体器件的制造方法

    公开(公告)号：US20150179482A1

    公开(公告)日：2015-06-25

    申请号：US14414921

    申请日：2013-07-17

    Applicant: NITTO DENKO CORPORATION

    Inventor： Munehisa Mitani ,  Yuki Ebe ,  Yasunari Ooyabu ,  Hiroshi Noro ,  Hiroki Kono

    IPC: H01L21/56 ,  H01L23/29

    CPC classification number: H01L21/563 ,  H01L21/561 ,  H01L21/568 ,  H01L23/293 ,  H01L23/295 ,  H01L33/54 ,  H01L33/56 ,  H01L2924/0002 ,  H01L2933/005 ,  H01L2924/00

    Abstract: A method for producing an encapsulating layer-covered semiconductor element includes a disposing step of disposing a semiconductor element on a support, an encapsulating step of embedding and encapsulating the semiconductor element by an encapsulating layer in an encapsulating sheet including a peeling layer and the encapsulating layer laminated below the peeling layer and made from a thermosetting resin before complete curing, and a heating step of heating and curing the encapsulating layer after the encapsulating step. The heating step includes a first heating step in which the encapsulating sheet is heated under a normal pressure at a first temperature, a peeling step in which the peeling layer is peeled from the encapsulating layer after the first heating step, and a second heating step in which the encapsulating layer is heated at a second temperature that is higher than the first temperature after the peeling step.

    Abstract translation: 一种封装层覆盖的半导体元件的制造方法，其特征在于，具有将半导体元件配置在支撑体上的配置工序，将由封装层将半导体元件包埋并封装在包含剥离层和封装层的封装片的封装工序 层压在剥离层下方，在完全固化前由热固性树脂制成，以及在封装步骤之后加热固化封装层的加热步骤。 加热工序包括第一加热工序，在第一加热工序中，在第一温度下，在常压下加热密封片，在第一加热工序后剥离剥离层从封装层剥离的剥离工序， 其在所述剥离步骤之后在高于所述第一温度的第二温度下加热所述封装层。

    Encapsulating layer-covered semiconductor element, producing method thereof, and semiconductor device
    9.
    发明授权
    Encapsulating layer-covered semiconductor element, producing method thereof, and semiconductor device 有权
    封装层覆盖的半导体元件及其制造方法以及半导体器件

    公开(公告)号：US09082940B2

    公开(公告)日：2015-07-14

    申请号：US13914158

    申请日：2013-06-10

    Applicant: NITTO DENKO CORPORATION

    Inventor： Yuki Ebe ,  Hiroyuki Katayama ,  Ryuichi Kimura ,  Hidenori Onishi ,  Kazuhiro Fuke

    IPC: H01L33/50 ,  H01L33/56 ,  H01L33/52 ,  H01L21/56 ,  H01L23/28 ,  H01L33/00

    CPC classification number: H01L33/501 ,  H01L21/568 ,  H01L23/28 ,  H01L33/0095 ,  H01L33/52 ,  H01L33/56 ,  H01L2924/0002 ,  H01L2933/005 ,  H01L2924/00

    Abstract: A method for producing an encapsulating layer-covered semiconductor element includes the steps of preparing a support sheet including a hard support board; disposing a semiconductor element at one side in a thickness direction of the support sheet; disposing an encapsulating layer formed from an encapsulating resin composition containing a curable resin at the one side in the thickness direction of the support sheet so as to cover the semiconductor element; curing the encapsulating layer to encapsulate the semiconductor element by the encapsulating layer that is flexible; cutting the encapsulating layer that is flexible corresponding to the semiconductor element to produce an encapsulating layer-covered semiconductor element; and peeling the encapsulating layer-covered semiconductor element from the support sheet.

    Abstract translation: 一种封装层覆盖的半导体元件的制造方法，其特征在于，包括硬支撑基板的支撑片的制作工序。 在支撑片的厚度方向的一侧设置半导体元件; 在所述支撑片的厚度方向的一侧设置由包含固化性树脂的封装树脂组合物形成的封装层，以覆盖所述半导体元件; 固化该封装层以通过柔性的封装层封装该半导体元件; 切割对应于半导体元件的柔性的封装层以产生封装层覆盖的半导体元件; 以及将所述封装层覆盖的半导体元件从所述支撑片剥离。

    PRODUCING METHOD OF ENCAPSULATING LAYER-COVERED SEMICONDUCTOR ELEMENT AND PRODUCING METHOD OF SEMICONDUCTOR DEVICE
    10.
    发明申请
    PRODUCING METHOD OF ENCAPSULATING LAYER-COVERED SEMICONDUCTOR ELEMENT AND PRODUCING METHOD OF SEMICONDUCTOR DEVICE 有权
    封装层状半导体元件的制造方法和半导体器件的制造方法

    公开(公告)号：US20150194324A1

    公开(公告)日：2015-07-09

    申请号：US14412746

    申请日：2013-07-17

    Applicant: NITTO DENKO CORPORATION

    Inventor： Munehisa Mitani ,  Yuki Ebe ,  Yasunari Ooyabu

    IPC: H01L21/56

    CPC classification number: H01L21/563 ,  H01L21/561 ,  H01L21/568 ,  H01L23/293 ,  H01L23/295 ,  H01L33/54 ,  H01L33/56 ,  H01L2924/0002 ,  H01L2933/005 ,  H01L2924/00

    Abstract: A method for producing an encapsulating layer-covered semiconductor element includes a disposing step of disposing a semiconductor element on a support, an encapsulating step of embedding and encapsulating the semiconductor element by an encapsulating layer in an encapsulating sheet including a peeling layer and the encapsulating layer laminated below the peeling layer and made from a thermosetting resin before complete curing, and a heating step of heating and curing the encapsulating layer after the encapsulating step. The heating step includes a first heating step in which the encapsulating sheet is heated at a first temperature, while being mechanically pressurized toward the support and a second heating step in which the encapsulating sheet is heated at a second temperature that is higher than the first temperature after the first heating step.

    Abstract translation: 一种封装层覆盖的半导体元件的制造方法，其特征在于，具有将半导体元件配置在支撑体上的配置工序，将由封装层将半导体元件嵌入并封装在包含剥离层和封装层的封装片的封装工序 层压在剥离层下方，在完全固化前由热固性树脂制成，以及在封装步骤之后加热固化封装层的加热步骤。 加热步骤包括第一加热步骤，其中封装片材在第一温度下被加热，同时朝着支撑体机械加压;第二加热步骤，其中封装片材在高于第一温度的第二温度下被加热 第一次加热步骤后。

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