中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

6 records (took 0.014 seconds)

    Pressure-sensitive adhesive sheet for semiconductor wafer processing
    3.
    发明授权
    Pressure-sensitive adhesive sheet for semiconductor wafer processing 有权

    公开(公告)号：US11898071B2

    公开(公告)日：2024-02-13

    申请号：US17845746

    申请日：2022-06-21

    Applicant: NITTO DENKO CORPORATION

    Inventor： Mariko Teshiba ,  Hiroki Kono

    IPC: C09J7/38 ,  H01L21/683 ,  C09J7/29

    CPC classification number: C09J7/385 ,  C09J7/29 ,  H01L21/6836

    Abstract: Provided is a pressure-sensitive adhesive sheet for semiconductor wafer processing that is excellent in adhesiveness with a semiconductor wafer, and that has light peelability and suppresses adhesive residue. The pressure-sensitive adhesive sheet for semiconductor wafer processing includes in this order: a base material; an intermediate layer; and a UV-curable pressure-sensitive adhesive layer. The intermediate layer has a storage modulus of elasticity at room temperature, G′1RT, of from 300 kPa to 2,000 kPa, and a storage modulus of elasticity at 80° C., G′180, of from 10 kPa to 500 kPa. The UV-curable pressure-sensitive adhesive layer has a storage modulus of elasticity at room temperature, G′2RT, of from 100 kPa to 1,000 kPa, and a storage modulus of elasticity at 80° C., G′280, of from 10 kPa to 1,000 kPa. G′1RT/G′2RT is 1 or more.

    PRODUCING METHOD OF ENCAPSULATING LAYER-COVERED SEMICONDUCTOR ELEMENT AND PRODUCING METHOD OF SEMICONDUCTOR DEVICE
    6.
    发明申请
    PRODUCING METHOD OF ENCAPSULATING LAYER-COVERED SEMICONDUCTOR ELEMENT AND PRODUCING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
    封装层状半导体元件的制造方法和半导体器件的制造方法

    公开(公告)号：US20150179482A1

    公开(公告)日：2015-06-25

    申请号：US14414921

    申请日：2013-07-17

    Applicant: NITTO DENKO CORPORATION

    Inventor： Munehisa Mitani ,  Yuki Ebe ,  Yasunari Ooyabu ,  Hiroshi Noro ,  Hiroki Kono

    IPC: H01L21/56 ,  H01L23/29

    CPC classification number: H01L21/563 ,  H01L21/561 ,  H01L21/568 ,  H01L23/293 ,  H01L23/295 ,  H01L33/54 ,  H01L33/56 ,  H01L2924/0002 ,  H01L2933/005 ,  H01L2924/00

    Abstract: A method for producing an encapsulating layer-covered semiconductor element includes a disposing step of disposing a semiconductor element on a support, an encapsulating step of embedding and encapsulating the semiconductor element by an encapsulating layer in an encapsulating sheet including a peeling layer and the encapsulating layer laminated below the peeling layer and made from a thermosetting resin before complete curing, and a heating step of heating and curing the encapsulating layer after the encapsulating step. The heating step includes a first heating step in which the encapsulating sheet is heated under a normal pressure at a first temperature, a peeling step in which the peeling layer is peeled from the encapsulating layer after the first heating step, and a second heating step in which the encapsulating layer is heated at a second temperature that is higher than the first temperature after the peeling step.

    Abstract translation: 一种封装层覆盖的半导体元件的制造方法，其特征在于，具有将半导体元件配置在支撑体上的配置工序，将由封装层将半导体元件包埋并封装在包含剥离层和封装层的封装片的封装工序 层压在剥离层下方，在完全固化前由热固性树脂制成，以及在封装步骤之后加热固化封装层的加热步骤。 加热工序包括第一加热工序，在第一加热工序中，在第一温度下，在常压下加热密封片，在第一加热工序后剥离剥离层从封装层剥离的剥离工序， 其在所述剥离步骤之后在高于所述第一温度的第二温度下加热所述封装层。

Patent Agency Ranking