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公开(公告)号：US20160018537A1
公开(公告)日：2016-01-21
申请号：US14800635
申请日：2015-07-15
发明人： Lan ZHANG , Yulan LI , Yuanjing LI , Jianqiang FU , Yingshuai DU , Wei ZHANG , Xuming MA , Jun LI
摘要： The present invention provides a method and apparatus for processing signals of a semiconductor detector, including: acquiring a relationship of a time difference between anode and cathode signals of the semiconductor detector with an anode signal amplitude; obtaining an optimal data screening interval according to the relationship of the time difference between anode and cathode signals of the semiconductor detector with the anode signal amplitude, wherein the optimal data screening interval is an interval where the time difference between the anode and cathode signals is greater than 50 ns; and screening and processing the collected data according to the optimal data screening interval when the semiconductor detector collects data. The present invention better overcomes the inherent crystal defects of the detector, reduces the effect of background noise, increases the energy resolution of the cadmium zinc telluride detector under room temperature, and improves the peak-to-compton ratio.
摘要翻译： 本发明提供了一种用于处理半导体检测器的信号的方法和装置，包括：用阳极信号振幅获取半导体检测器的阳极和阴极信号之间的时间差的关系; 根据半导体检测器的阳极和阴极信号的时间差与阳极信号幅度的关系获得最佳数据筛选间隔，其中最佳数据筛选间隔是阳极和阴极信号之间的时间差较大的间隔 超过50 ns; 并且当半导体检测器收集数据时，根据最佳数据筛选间隔筛选和处理收集的数据。 本发明更好地克服了检测器的固有晶体缺陷，降低了背景噪声的影响，提高了碲化锌碲化镉检测器在室温下的能量分辨率，提高了峰 - 峰比。
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公开(公告)号：US20190334045A1
公开(公告)日：2019-10-31
申请号：US16343983
申请日：2017-09-12
发明人： Lan ZHANG , Haifan HU , Xuepeng CAO , Jun LI
IPC分类号： H01L31/0352 , H01L31/02 , H01L31/18 , H01L27/146
摘要： According to an embodiment, a method of fabricating a photodiode device may include: growing an epitaxial layer on a first surface of a substrate, wherein the epitaxial layer is first type lightly doped; forming, in the substrate, a first type heavily doped region in contact with the first type lightly doped epitaxial layer; thinning the substrate from a second surface of the substrate opposite to the first surface to expose the first type heavily doped region; patterning the first type heavily doped region from the second surface side of the substrate to form a trench therein, that penetrates through the first type heavily doped region and extends into the epitaxial layer, to serve as a first electrode region of the photodiode device; and forming a second type heavily doped region at bottom of the trench, to serve as a second electrode region of the photodiode device.
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公开(公告)号：US20180284302A1
公开(公告)日：2018-10-04
申请号：US15740813
申请日：2016-08-23
发明人： Lan ZHANG , Weizhi WANG , Yingshuai DU , Zonggui WU , Wei ZHANG , Xuming MA , Kun ZHAO , Jun LI
摘要： The present invention relates to the field of radiation detection, and provides a CdZnTe aerial inspection system and an inspection method. The inspection system comprises a CdZnTe spectrometer (10) and an aircraft (20). The aircraft (20) flies and carries the CdZnTe spectrometer (10) to realize a function of aerial inspection, thereby improving operating efficiency of nuclear radiation monitoring. The CdZnTe spectrometer (10) has high energy resolution, a small volume, a light weight, and desirable portability. By combining the CdZnTe spectrometer (10) and the aircraft (20), the present invention enables high measurement precision, a long operation duration, and an aerial access to a site of a nuclear accident to perform operations and inspect the site, thus reducing radiation exposure received by a person entering the site, and providing support for rescue operation.
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公开(公告)号：US20190326458A1
公开(公告)日：2019-10-24
申请号：US16467623
申请日：2017-08-08
发明人： Lan ZHANG , Haifan HU , Xuepeng CAO , Jun LI
IPC分类号： H01L31/0352 , H01L31/0232 , H01L31/0224 , H01L31/103 , H01L27/146
摘要： A photodiode device and a photodiode detector are provided. According to an embodiment, the photodiode device may include a first type lightly doped semiconductor base including a first surface and a second surfaces opposite to each other, a first electrode region being first type heavily doped and disposed on the first surface of the semiconductor base, a second electrode region being second type heavily doped and disposed on the second surface of the semiconductor base, wherein the first surface is a light incident surface.
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公开(公告)号：US20180342542A1
公开(公告)日：2018-11-29
申请号：US15580848
申请日：2016-08-31
发明人： Lan ZHANG , Yuanjing LI , Yinong LIU , Haifan HU , Jun LI
IPC分类号： H01L27/144 , H01L31/0224 , H01L31/18 , H01L31/0352
CPC分类号： H01L27/1446 , H01L27/1443 , H01L27/146 , H01L27/1463 , H01L31/0224 , H01L31/035281 , H01L31/1804
摘要： A coplanar electrode photodiode array and a manufacturing method thereof are disclosed. On a top side of a low resistance rate substrate, a high resistance epitaxial silicon wafer, a first conductive type heavily doped region and a second conductive type doped region are formed, which are a cathode and an anode of a photodiode respectively. The structure includes a trench structure formed between the anode and the cathode, the trench structure may be form by a gap, an insulating material, a conductive structure, a reflective material, and ion implantation, and also includes a first conductive type heavily doped region, an insulating isolation layer or a conductive structure with an insulating layer, and the like formed under the anode and the cathode.
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公开(公告)号：US20180062021A1
公开(公告)日：2018-03-01
申请号：US15625473
申请日：2017-06-16
发明人： Lan ZHANG , Yingshuai DU , Bo LI , Zonggui WU , Jun LI , Xuepeng CAO , Haifan HU , Jianping GU , Guangming XU , Bicheng LIU
IPC分类号： H01L31/118 , G01T1/02 , H01L31/0296 , H01L31/028 , H01L31/032 , H01L31/0304 , H01L31/0224 , H01L27/144
CPC分类号： H01L31/118 , G01T1/026 , G01T1/241 , H01L27/1446 , H01L31/022408 , H01L31/022416 , H01L31/028 , H01L31/0296 , H01L31/02966 , H01L31/0304 , H01L31/032
摘要： There is provided a semiconductor detector. According to an embodiment, the semiconductor detector may include a semiconductor detection material including a first side and a second side opposite to each other. One of the first side and the second side is a ray incident side that receives incident rays. The detector may further include a plurality of pixel cathodes disposed on the first side and a plurality of pixel anodes disposed on the second side. The pixel anodes and the pixel cathodes correspond to each other one by one. The detector may further include a barrier electrode disposed on a periphery of respective one of the pixel cathodes or pixel anodes on the ray incident side. According to the embodiment of the present disclosure, it is possible to effectively suppress charge sharing between the pixels and thus to improve an imaging resolution of the detector.
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