公开(公告)号：US09431599B2

公开(公告)日：2016-08-30

申请号：US14782318

申请日：2014-05-19

Applicant: NANYANG TECHNOLOGICAL UNIVERSITY

Inventor： Wen Siang Lew ,  Chandrasekhar Murapaka ,  Indra Purnama ,  Sarjoosing Goolaup ,  Pankaj Sethi ,  Chinkhanlun Guite

IPC: G06F7/38 ,  H03K19/173 ,  H01L43/02 ,  H03K19/20 ,  H01L43/08

CPC classification number: H01L43/02 ,  G11C11/14 ,  H01L43/08 ,  H03K19/20

Abstract: A non-volatile logic device, comprising: a first input element magnetizable along a first direction to impart or change a chirality of a domain wall traversing the first input element a second input element configured to transport the domain wall, a magnetization of the second input element along a second direction representing a second logical input; a bifurcated output section comprising a pair of output elements for receiving the domain wall from the second input element, a magnetization of at least part of the output elements being changeable by propagation of the domain wall along the output elements; and a non-magnetic conductive element; wherein the magnetization in an output element after propagation of the domain wall represents a value of a logical function selectable by passing an electrical current through the non-magnetic conductive element to induce a magnetic field of a desired magnitude and direction in the second input element.

Abstract translation: 一种非易失性逻辑器件，包括：第一输入元件，其沿着第一方向可磁化，以赋予或改变穿过所述第一输入元件的畴壁的手性，所述第二输入元件配置成输送所述畴壁;第二输入 元件沿第二方向表示第二逻辑输入; 分支输出部分，包括用于从第二输入元件接收畴壁的一对输出元件，至少部分输出元件的磁化可通过畴壁沿着输出元件的传播而改变; 和非磁性导电元件; 其中所述畴壁传播之后的输出元件中的磁化表示通过使电流通过所述非磁性导电元件以在所述第二输入元件中引起期望的大小和方向的磁场而可选择的逻辑功能的值。

公开(公告)号：US12068746B2

公开(公告)日：2024-08-20

申请号：US17773945

申请日：2020-11-02

Applicant: Nanyang Technological University

Inventor： Chu Keong Gerard Joseph Lim ,  Chandrasekhar Murapaka ,  Wen Siang Lew

IPC: G11C11/16 ,  G11C11/18 ,  H03K19/18 ,  H03K19/21 ,  H10N52/00

CPC classification number: H03K19/18 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H03K19/21 ,  H10N52/00

Abstract: A magnetic logic device having two magnetic elements and a conductive element coupled to the two magnetic elements and arranged at least substantially perpendicular to the magnetic elements, wherein the device is configured, for each magnetic element, to have a magnetisation state with a perpendicular easy axis, and to switch the magnetisation state in response to a spin current generated in the magnetic element in response to a write current applied to the magnetic element, and configured to generate, as an output, a Hall voltage across the conductive element in response to a respective read current applied to each magnetic element, wherein a magnitude of the Hall voltage is variable, depending on a direction of the magnetisation state of each magnetic element and a direction of the respective read current applied to each magnetic element, for the device to provide outputs corresponding to one of a plurality of logical operations.

公开(公告)号：US10127016B2

公开(公告)日：2018-11-13

申请号：US15411811

申请日：2017-01-20

Applicant: NANYANG TECHNOLOGICAL UNIVERSITY

Inventor： Pankaj Sethi ,  Chandrasekhar Murapaka ,  Wen Siang Lew ,  Arindam Basu

IPC: G06F7/58

Abstract: A magnetic random number generator is disclosed. The magnetic random number generator comprises: a) a Hall cross structure comprising at least one magnetic nanowire with perpendicular magnetic anisotropy; b) an in-plane pulsed current generator operable to generate stochastic nucleation of domain walls (DWs) in the Hall cross structure; and c) a sensor configured to measure a parameter of the Hall cross structure upon DW nucleation, wherein said parameter has a value representing a random number. A greater number of Hall cross structures may be employed to generate a random number having a greater number of bits.

公开(公告)号：US20190272874A1

公开(公告)日：2019-09-05

申请号：US16338033

申请日：2017-09-12

Applicant: Nanyang Technological University

Inventor： Putu Andhita Dananjaya ,  Wen Siang Lew

IPC: G11C13/00 ,  H01L45/00 ,  H01L27/24

Abstract: According to embodiments of the present invention, a memory device is provided. The memory device includes an electrochemical metallization memory (ECM) cell and a valence change memory (VCM) cell arranged one over the other. According to further embodiments of the present invention, a method of forming a memory device, a method for controlling a memory device, and a memory array are also provided.

公开(公告)号：US09502090B2

公开(公告)日：2016-11-22

申请号：US14759073

申请日：2014-01-02

Applicant: Nanyang Technological University

Inventor： Wen Siang Lew ,  Indra Purnama ,  Chandra Sekhar Murapaka

IPC: G11C11/00 ,  G11C11/16 ,  G11C11/14 ,  G11C11/15 ,  G11C19/08

CPC classification number: G11C11/1673 ,  G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  G11C19/0808 ,  G11C19/0833 ,  G11C19/0841

Abstract: A memory device comprising a ferromagnetic data nanowire, a ferromagnetic driver nanowire, read element and/or a spaced write element positioned about the data nanowire, wherein driving a domain wall in the driver nanowire remotely drives a domain wall in the data nanowire past the read element and/or the write element.

Abstract translation: 包括铁磁数据纳米线，铁磁驱动器纳米线，读取元件和/或围绕数据纳米线定位的间隔写入元件的存储器件，其中驱动驱动器纳米线中的畴壁远程驱动数据纳米线中的畴壁经过读取 元素和/或写入元件。