摘要:
As a method for producing a degreasing composition in the form of a slurry, crystallization of the composition during low-temperature storage being suppressed and the composition being used for preparing a cleaning liquid having little environmental impact, provided is a method including a step of obtaining a slurry by mixing a first liquid and a powdery silicate having a particle diameter ranging from 0.2 mm to 10 mm, wherein the first liquid contains an alkaline component composed of at least one of sodium hydroxide and potassium hydroxide, an alcohol having three or fewer carbon atoms, and water; and the degreasing composition contains, with respect to the total composition, 10 mass % to 60 mass % of the alkaline component, 0.1 mass % to 5 mass % of the alcohol, 1 mass % to 50 mass % of the silicate, and 20 mass % to 50 mass % of water including hydration water of the silicate, and contains no chelating agent.
摘要:
As a general-purpose aqueous cleaning agent composition which has excellent oil separability adaptable even to water soluble machining oils, the present invention provides an aqueous cleaning agent composition including an emulsifying agent that removes an oil component from a member subjected to cleaning to which the oil component is adhering and emulsifies the oil component, a separating agent comprised of an anionic polymer and a separating auxiliary agent comprised of a cationic surfactant. It is preferred that the molecular weight of the anionic polymer is 1500 to 50000. It is also preferred that the HLB value of the separating auxiliary agent is a value of 26 or more as defined by the Davies' method.
摘要:
A plasma processing system includes a first unit for plasma-processing a sample based on a recipe for plasma processing, and a second unit for modifying the recipe in accordance with a monitored value obtained during the plasma processing of the sample in the first unit. A next sample is plasma processed in the first unit based on the modified recipe.
摘要:
The present invention provides a substrate processing apparatus for processing substrates by immersing the substrates in a processing liquid. This substrate processing apparatus includes a processing tank having a pair of side walls arranged to be opposed to each other; and a pair of processing-liquid supply mechanisms provided respectively corresponding to the pair of side walls. The pair of processing-liquid supply mechanisms are respectively configured for supplying the processing liquid toward a central portion of the processing tank in the width direction connecting the pair of side walls, thereby to create a rising flow of the processing liquid in a central area in the width direction of the processing tank. Each inner wall face of the pair of side walls includes a main body, a projecting portion located above the main body, and a discharge guide portion located uppermost and providing a discharge port configured for allowing the processing liquid to overflow. The discharge guide portion is inclined upward, opposite to the central portion in the width direction. The projecting portion includes an inner end portion located nearer to the central portion in the width direction, as compared with the main body and discharge guide portion.
摘要:
A plasma processing apparatus includes a vacuum processing apparatus for performing a multi-step processing operation for a sample, a sensor for monitoring process parameters during at least a first step of the processing operation, a signal compression unit for compressing a signal from the sensor to generate an apparatus state signal, a worked result estimate model unit which estimates a processed result on the basis of the apparatus state signal and a set processed-result estimation equation, an optimum recipe calculation model unit which calculates corrections to processing conditions so that the processed result becomes a target value, a usable recipe selecting unit which judges validity of an optimum recipe. At a next step of the processing operation, sample processing is performed under optimum conditions on the basis of the usable recipe selected by the selected usable recipe.
摘要:
A semiconductor processing apparatus for processing a semiconductor wafer includes a plurality of sensors for monitoring a processing state, a processing result input unit, a model equation generation unit to generate a model equation for predicting a processing result, a processing result prediction unit which predicts a processing result, and a process recipe control unit. Further, a system is provided which comprises the model equation generation unit is provided at a remote location, and transmits the generated prediction model equation to the semiconductor processing apparatus through a network to control the processing condition of the semiconductor processing apparatus by the process recipe control unit.
摘要:
The invention provides a means for estimating a self-bias voltage under arbitrary etching conditions via a simple procedure. The present invention provides a method for measuring self-bias voltage of an etching apparatus comprising an electrostatic chuck mechanism 1 and 10 for chucking a sample 2, a mechanism 13 and 14 for supplying cooling gas 12 to a rear surface of the sample 2 and controlling the pressure thereof, and a means for measuring the relative force of electrostatic chuck of the sample based on the rear surface pressure control status of the sample 2 being processed, wherein the relative force of electrostatic chuck of the sample and the electrostatic chuck voltage corresponding to the force of electrostatic chuck are acquired based on the rear surface pressure control of the sample 2 when high-frequency bias power is applied to the sample 2 being processed, and the relative force of electrostatic chuck of the sample and the electrostatic chuck voltage corresponding to the force of electrostatic chuck are acquired based on the rear surface pressure control status of the sample when high-frequency bias power is not applied to the sample being processed, and the self-bias voltage is estimated using the acquired forces of electrostatic chuck and the electrostatic chuck voltages corresponding to the two statuses.
摘要:
An AF control apparatus for a zoom lens system includes a movable lens group serving as a zooming lens group and a focusing lens group in the zoom lens system; a focusing table which stores focusing data for the movable lens group; a zooming table which stores zooming data for the movable lens group, the zooming table having different data from the focusing table; and a driving device for moving the movable lens group in an optical axis direction of the zoom lens system according to data stored in the focusing table and the zooming table.
摘要:
A plasma processing control system includes a plasma processing apparatus for generating plasma within a vacuum processing chamber and performing a processing operation over a sample accommodated within the vacuum processing chamber using radicals and ions within the plasma, a pre-measuring instrument which measures a shape of the sample before processing, a post-measuring instrument which measures a shape of the sample after the processing, a parameter changer provided with at least one optimum recipe model for calculating a target process parameter, and a model changer for modifying the optimum recipe model, thereby updating a recipe parameter for each etching.
摘要:
A method for operating a semiconductor processing apparatus that plasma-processes a semiconductor wafer mounted on a stage placed in a container using a plasma generated therein. The method includes setting a temperature of the semiconductor wafer, and controlling an operation of the semiconductor processing apparatus based on information about the temperature of the semiconductor wafer which is set.